D-Index & Metrics Best Publications

D-Index & Metrics D-index (Discipline H-index) only includes papers and citation values for an examined discipline in contrast to General H-index which accounts for publications across all disciplines.

Discipline name D-index D-index (Discipline H-index) only includes papers and citation values for an examined discipline in contrast to General H-index which accounts for publications across all disciplines. Citations Publications World Ranking National Ranking
Materials Science D-index 59 Citations 10,987 405 World Ranking 4619 National Ranking 1319

Overview

What is he best known for?

The fields of study he is best known for:

  • Quantum mechanics
  • Electron
  • Semiconductor

His primary areas of investigation include Optoelectronics, Analytical chemistry, Epitaxy, Crystallography and Sapphire. Much of his study explores Optoelectronics relationship to Laser. His Analytical chemistry research integrates issues from Molecular beam epitaxy, Impurity, Transmission electron microscopy, Gallium and Sublimation.

The study incorporates disciplines such as Surface roughness, Molecular physics, Hydride and Chemical vapor deposition in addition to Epitaxy. His studies deal with areas such as Optical microscope, Diffraction and Raman spectroscopy as well as Crystallography. His work deals with themes such as Annealing, Substrate and Nucleation, which intersect with Sapphire.

His most cited work include:

  • Ultrawide‐Bandgap Semiconductors: Research Opportunities and Challenges (315 citations)
  • Growth of cubic phase gallium nitride by modified molecular‐beam epitaxy (284 citations)
  • Critical evaluation of the status of the areas for future research regarding the wide band gap semiconductors diamond, gallium nitride and silicon carbide (175 citations)

What are the main themes of his work throughout his whole career to date?

Zlatko Sitar mostly deals with Optoelectronics, Analytical chemistry, Epitaxy, Nitride and Wide-bandgap semiconductor. His research on Optoelectronics often connects related topics like Dislocation. The concepts of his Analytical chemistry study are interwoven with issues in Crystallography, Metalorganic vapour phase epitaxy, Impurity and Diamond.

His work carried out in the field of Epitaxy brings together such families of science as Thin film, Gallium nitride, Substrate and Hydride. His Nitride research incorporates elements of Silicon carbide, Aluminium and X-ray photoelectron spectroscopy. His Wide-bandgap semiconductor research is multidisciplinary, incorporating perspectives in Laser, Heterojunction, Light-emitting diode and Semiconductor.

He most often published in these fields:

  • Optoelectronics (37.47%)
  • Analytical chemistry (28.34%)
  • Epitaxy (20.14%)

What were the highlights of his more recent work (between 2017-2021)?

  • Optoelectronics (37.47%)
  • Doping (13.35%)
  • Wide-bandgap semiconductor (16.16%)

In recent papers he was focusing on the following fields of study:

Optoelectronics, Doping, Wide-bandgap semiconductor, Impurity and Analytical chemistry are his primary areas of study. The Optoelectronics study combines topics in areas such as Laser, Nitride and Dislocation. Zlatko Sitar combines subjects such as Thin film, Quasi Fermi level, Silicon and Conductivity with his study of Doping.

His studies in Wide-bandgap semiconductor integrate themes in fields like Magnetism and Supersaturation. The various areas that Zlatko Sitar examines in his Impurity study include Thermal conductivity, Fermi level, Epitaxy, Crystallographic defect and Photoluminescence. His Analytical chemistry research is multidisciplinary, relying on both Single crystal and Atmospheric temperature range.

Between 2017 and 2021, his most popular works were:

  • Ultrawide‐Bandgap Semiconductors: Research Opportunities and Challenges (315 citations)
  • On compensation in Si-doped AlN (41 citations)
  • Doping and compensation in Al-rich AlGaN grown on single crystal AlN and sapphire by MOCVD (38 citations)

In his most recent research, the most cited papers focused on:

  • Quantum mechanics
  • Electron
  • Semiconductor

Zlatko Sitar mainly investigates Optoelectronics, Impurity, Doping, Density functional theory and Crystallographic defect. Zlatko Sitar studies Diode, a branch of Optoelectronics. His Impurity research incorporates themes from Photoluminescence and Analytical chemistry.

His Analytical chemistry research is multidisciplinary, incorporating elements of Thermal conductivity, Single crystal and Epitaxy. His work in Doping addresses subjects such as Silicon, which are connected to disciplines such as Hybrid functional, Gallium nitride, Oxygen, Energy and Charge. His biological study spans a wide range of topics, including Orders of magnitude and Fermi level.

This overview was generated by a machine learning system which analysed the scientist’s body of work. If you have any feedback, you can contact us here.

Best Publications

Ultrawide-Bandgap Semiconductors: Research Opportunities and Challenges

J. Y. Tsao;S. Chowdhury;M. A. Hollis;D. Jena.
Advanced electronic materials (2018)

706 Citations

Growth of cubic phase gallium nitride by modified molecular‐beam epitaxy

M. J. Paisley;Z. Sitar;J. B. Posthill;R. F. Davis.
Journal of Vacuum Science and Technology (1989)

495 Citations

Critical evaluation of the status of the areas for future research regarding the wide band gap semiconductors diamond, gallium nitride and silicon carbide

R.F. Davis;Z. Sitar;B.E. Williams;H.S. Kong.
Materials Science and Engineering B-advanced Functional Solid-state Materials (1988)

271 Citations

Progress on n‐type doping of AlGaN alloys on AlN single crystal substrates for UV optoelectronic applications

Ramón Collazo;Seiji Mita;Jinqiao Xie;Anthony Rice.
Physica Status Solidi (c) (2011)

177 Citations

Growth and Characterization of AlN and AlGaN Epitaxial Films on AlN Single Crystal Substrates

R. Dalmau;B. Moody;R. Schlesser;S. Mita.
Journal of The Electrochemical Society (2011)

161 Citations

Growth of AlN/GaN layered structures by gas source molecular‐beam epitaxy

Z. Sitar;M. J. Paisley;B. Yan;J. Ruan.
Journal of Vacuum Science & Technology B (1990)

160 Citations

On the origin of the 265 nm absorption band in AlN bulk crystals

Ramón Collazo;Jinqiao Xie;Benjamin E. Gaddy;Zachary Bryan.
Applied Physics Letters (2012)

158 Citations

Seeded growth of AlN bulk single crystals by sublimation

R. Schlesser;R. Dalmau;Z. Sitar.
Journal of Crystal Growth (2002)

154 Citations

Seeded growth of AlN bulk crystals in m- and c-orientation

P. Lu;R. Collazo;R.F. Dalmau;G. Durkaya.
Journal of Crystal Growth (2009)

150 Citations

Universal phonon mean free path spectra in crystalline semiconductors at high temperature

Justin P. Freedman;Jacob H. Leach;Edward A. Preble;Zlatko Sitar.
Scientific Reports (2013)

144 Citations

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