His primary areas of investigation include Optoelectronics, Analytical chemistry, Epitaxy, Crystallography and Sapphire. Much of his study explores Optoelectronics relationship to Laser. His Analytical chemistry research integrates issues from Molecular beam epitaxy, Impurity, Transmission electron microscopy, Gallium and Sublimation.
The study incorporates disciplines such as Surface roughness, Molecular physics, Hydride and Chemical vapor deposition in addition to Epitaxy. His studies deal with areas such as Optical microscope, Diffraction and Raman spectroscopy as well as Crystallography. His work deals with themes such as Annealing, Substrate and Nucleation, which intersect with Sapphire.
Zlatko Sitar mostly deals with Optoelectronics, Analytical chemistry, Epitaxy, Nitride and Wide-bandgap semiconductor. His research on Optoelectronics often connects related topics like Dislocation. The concepts of his Analytical chemistry study are interwoven with issues in Crystallography, Metalorganic vapour phase epitaxy, Impurity and Diamond.
His work carried out in the field of Epitaxy brings together such families of science as Thin film, Gallium nitride, Substrate and Hydride. His Nitride research incorporates elements of Silicon carbide, Aluminium and X-ray photoelectron spectroscopy. His Wide-bandgap semiconductor research is multidisciplinary, incorporating perspectives in Laser, Heterojunction, Light-emitting diode and Semiconductor.
Optoelectronics, Doping, Wide-bandgap semiconductor, Impurity and Analytical chemistry are his primary areas of study. The Optoelectronics study combines topics in areas such as Laser, Nitride and Dislocation. Zlatko Sitar combines subjects such as Thin film, Quasi Fermi level, Silicon and Conductivity with his study of Doping.
His studies in Wide-bandgap semiconductor integrate themes in fields like Magnetism and Supersaturation. The various areas that Zlatko Sitar examines in his Impurity study include Thermal conductivity, Fermi level, Epitaxy, Crystallographic defect and Photoluminescence. His Analytical chemistry research is multidisciplinary, relying on both Single crystal and Atmospheric temperature range.
Zlatko Sitar mainly investigates Optoelectronics, Impurity, Doping, Density functional theory and Crystallographic defect. Zlatko Sitar studies Diode, a branch of Optoelectronics. His Impurity research incorporates themes from Photoluminescence and Analytical chemistry.
His Analytical chemistry research is multidisciplinary, incorporating elements of Thermal conductivity, Single crystal and Epitaxy. His work in Doping addresses subjects such as Silicon, which are connected to disciplines such as Hybrid functional, Gallium nitride, Oxygen, Energy and Charge. His biological study spans a wide range of topics, including Orders of magnitude and Fermi level.
This overview was generated by a machine learning system which analysed the scientist’s body of work. If you have any feedback, you can contact us here.
Ultrawide-Bandgap Semiconductors: Research Opportunities and Challenges
J. Y. Tsao;S. Chowdhury;M. A. Hollis;D. Jena.
Advanced electronic materials (2018)
Growth of cubic phase gallium nitride by modified molecular‐beam epitaxy
M. J. Paisley;Z. Sitar;J. B. Posthill;R. F. Davis.
Journal of Vacuum Science and Technology (1989)
Critical evaluation of the status of the areas for future research regarding the wide band gap semiconductors diamond, gallium nitride and silicon carbide
R.F. Davis;Z. Sitar;B.E. Williams;H.S. Kong.
Materials Science and Engineering B-advanced Functional Solid-state Materials (1988)
Progress on n‐type doping of AlGaN alloys on AlN single crystal substrates for UV optoelectronic applications
Ramón Collazo;Seiji Mita;Jinqiao Xie;Anthony Rice.
Physica Status Solidi (c) (2011)
Growth and Characterization of AlN and AlGaN Epitaxial Films on AlN Single Crystal Substrates
R. Dalmau;B. Moody;R. Schlesser;S. Mita.
Journal of The Electrochemical Society (2011)
Growth of AlN/GaN layered structures by gas source molecular‐beam epitaxy
Z. Sitar;M. J. Paisley;B. Yan;J. Ruan.
Journal of Vacuum Science & Technology B (1990)
On the origin of the 265 nm absorption band in AlN bulk crystals
Ramón Collazo;Jinqiao Xie;Benjamin E. Gaddy;Zachary Bryan.
Applied Physics Letters (2012)
Seeded growth of AlN bulk single crystals by sublimation
R. Schlesser;R. Dalmau;Z. Sitar.
Journal of Crystal Growth (2002)
Seeded growth of AlN bulk crystals in m- and c-orientation
P. Lu;R. Collazo;R.F. Dalmau;G. Durkaya.
Journal of Crystal Growth (2009)
Universal phonon mean free path spectra in crystalline semiconductors at high temperature
Justin P. Freedman;Jacob H. Leach;Edward A. Preble;Zlatko Sitar.
Scientific Reports (2013)
If you think any of the details on this page are incorrect, let us know.
We appreciate your kind effort to assist us to improve this page, it would be helpful providing us with as much detail as possible in the text box below: