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Materials Science

D-Index
66
Citations
15649
World Ranking
5357
National Ranking
1396

Overview

Zlatko Sitar is affiliated with North Carolina State University in the United States. Their research primarily spans across several fields including Physics and Astronomy, Engineering, and Materials Science, with a notable focus on subfields such as Condensed Matter Physics, Electrical and Electronic Engineering, Electronic, Optical and Magnetic Materials, Materials Chemistry, and Mechanics of Materials.

The scientist's work centers on topics related to semiconductor materials and devices, particularly GaN-based semiconductor devices and materials. Other significant research topics include Ga2O3 and related materials, semiconductor materials and devices in general, metal and thin film mechanics, ZnO doping and properties, silicon carbide semiconductor technologies, and acoustic wave resonator technologies.

Sitar has contributed extensively to scholarly publications with a number of research papers appearing in prominent venues. Frequent publication venues include Applied Physics Letters, Journal of Applied Physics, Applied Physics Express, physica status solidi (a), and Journal of Crystal Growth.

Notable recent papers authored by Sitar include:

  • The 2020 UV emitter roadmap (2020), Journal of Physics D Applied Physics
  • High Mg activation in implanted GaN by high temperature and ultrahigh pressure annealing (2021), Applied Physics Letters
  • High gain, large area, and solar blind avalanche photodiodes based on Al-rich AlGaN grown on AlN substrates (2020), Applied Physics Letters
  • The role of chemical potential in compensation control in Si:AlGaN (2020), Journal of Applied Physics
  • High electron mobility in AlN:Si by point and extended defect management (2022), Journal of Applied Physics

Collaboration plays a significant role in Sitar's research, with frequent coauthors including Ramón Collazo, Pramod Reddy, Ronny Kirste, Seiji Mita, and Dolar Khachariya. These partnerships contribute to interdisciplinary research across the fields of semiconductor device engineering and materials science.

Best Publications

  • Ultrawide-Bandgap Semiconductors: Research Opportunities and Challenges

    J. Y. Tsao;S. Chowdhury;M. A. Hollis;D. Jena

  • Growth of cubic phase gallium nitride by modified molecular‐beam epitaxy

    M. J. Paisley;Z. Sitar;J. B. Posthill;R. F. Davis

  • The 2020 UV emitter roadmap

    Hiroshi Amano;Ramón Collazo;Carlo De Santi;Sven Einfeldt

  • Critical evaluation of the status of the areas for future research regarding the wide band gap semiconductors diamond, gallium nitride and silicon carbide

    R.F. Davis;Z. Sitar;B.E. Williams;H.S. Kong

  • Progress on n‐type doping of AlGaN alloys on AlN single crystal substrates for UV optoelectronic applications

    Ramón Collazo;Seiji Mita;Jinqiao Xie;Anthony Rice

  • On the origin of the 265 nm absorption band in AlN bulk crystals

    Ramón Collazo;Jinqiao Xie;Benjamin E. Gaddy;Zachary Bryan

  • Universal phonon mean free path spectra in crystalline semiconductors at high temperature

    Justin P. Freedman;Jacob H. Leach;Edward A. Preble;Zlatko Sitar

  • Growth and Characterization of AlN and AlGaN Epitaxial Films on AlN Single Crystal Substrates

    R. Dalmau;B. Moody;R. Schlesser;S. Mita

  • High internal quantum efficiency in AlGaN multiple quantum wells grown on bulk AlN substrates

    Zachary Bryan;Isaac Bryan;Jinqiao Xie;Seiji Mita

  • Surface kinetics in AlN growth: A universal model for the control of surface morphology in III-nitrides

    Isaac Bryan;Zachary Bryan;Seiji Mita;Anthony Rice

  • Seeded growth of AlN bulk crystals in m- and c-orientation

    P. Lu;R. Collazo;R.F. Dalmau;G. Durkaya

  • Seeded growth of AlN bulk single crystals by sublimation

    R. Schlesser;R. Dalmau;Z. Sitar

  • Growth of AlN/GaN layered structures by gas source molecular‐beam epitaxy

    Z. Sitar;M. J. Paisley;B. Yan;J. Ruan

  • Surface preparation and homoepitaxial deposition of AlN on (0001)-oriented AlN substrates by metalorganic chemical vapor deposition

    A. Rice;R. Collazo;J. Tweedie;R. Dalmau

  • Influence of gallium supersaturation on the properties of GaN grown by metalorganic chemical vapor deposition

    S. Mita;R. Collazo;A. Rice;R. F. Dalmau

  • Preparation of a Freestanding AlN Substrate from a Thick AlN Layer Grown by Hydride Vapor Phase Epitaxy on a Bulk AlN Substrate Prepared by Physical Vapor Transport

    Yoshinao Kumagai;Yuki Kubota;Toru Nagashima;Toru Nagashima;Toru Kinoshita

  • Performance and Reliability of Deep-Ultraviolet Light-Emitting Diodes Fabricated on AlN Substrates Prepared by Hydride Vapor Phase Epitaxy

    Toru Kinoshita;Toru Kinoshita;Toshiyuki Obata;Toru Nagashima;Hiroyuki Yanagi

  • On compensation in Si-doped AlN

    Joshua S. Harris;Jonathon N. Baker;Benjamin E. Gaddy;Isaac Bryan

  • Deep-Ultraviolet Light-Emitting Diodes Fabricated on AlN Substrates Prepared by Hydride Vapor Phase Epitaxy

    Toru Kinoshita;Toru Kinoshita;Keiichiro Hironaka;Toshiyuki Obata;Toru Nagashima;Toru Nagashima

  • The role of surface kinetics on composition and quality of AlGaN

    Isaac Bryan;Zachary Bryan;Seiji Mita;Anthony Rice

  • Growth of AlN single crystalline boules

    Z.G. Herro;D. Zhuang;R. Schlesser;Z. Sitar

  • Lasing and Longitudinal Cavity Modes in Photo-Pumped Deep Ultraviolet AlGaN Heterostructures

    Jinqiao Xie;Seiji Mita;Zachary Bryan;Wei Guo

Frequent Co-Authors

Ramon Collazo
Ramon Collazo North Carolina State University
Robert F. Davis
Robert F. Davis Carnegie Mellon University
Jon-Paul Maria
Jon-Paul Maria Pennsylvania State University
Axel Hoffmann
Axel Hoffmann University of Illinois at Urbana-Champaign
Yoshinao Kumagai
Yoshinao Kumagai Tokyo University of Agriculture and Technology
Robert Nemanich
Robert Nemanich Arizona State University
Michael Dudley
Michael Dudley Stony Brook University
Peter Günter
Peter Günter ETH Zurich
Klaus Thonke
Klaus Thonke University of Ulm
Wei Liu
Wei Liu University of California, Riverside

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