2026 Michael Dudley: Materials Science Researcher – H-Index, Publications & Awards

Discipline name	D-Index	World Ranking	Current World Ranking	National Ranking	Current National Ranking	Publications	Citations
Materials Science	47	11071	10697	2606	2422	512	9124

Discipline name

D-Index

World Ranking

Current World Ranking

National Ranking

Current National Ranking

Publications

Citations

Materials Science

11071

10697

2606

2422

512

9124

Overview

Michael Dudley is affiliated with Stony Brook University in the United States and specializes in engineering, particularly within the subfields of electrical and electronic engineering, condensed matter physics, atomic and molecular physics and optics, biomedical engineering, and mechanics of materials.

Their research primarily covers topics related to semiconductor technologies and materials. Key areas of focus include:

Silicon Carbide Semiconductor Technologies
Silicon and Solar Cell Technologies
GaN-based semiconductor devices and materials
Semiconductor materials and interfaces
Thin-Film Transistor Technologies
Semiconductor materials and devices
Integrated Circuits and Semiconductor Failure Analysis

Michael Dudley has contributed numerous papers, with publications appearing in several academic venues. Frequent publication venues include:

ECS Meeting Abstracts
ECS Transactions
Journal of Electronic Materials
Materials Science Forum
Defect and Diffusion Forum / Diffusion and Defect Data, Solid State Data. Part A, Defect and Diffusion Forum

Some recent papers authored or co-authored by Michael Dudley include:

X-ray topography characterization of gallium nitride substrates for power device development, 2020, Journal of Crystal Growth
The improvement of Mo/4H-SiC Schottky diodes via a P2O5 surface passivation treatment, 2020, Journal of Applied Physics
Synchrotron X-ray topography characterization of high quality ammonothermal-grown gallium nitride substrates, 2020, Journal of Crystal Growth
Synchrotron X-ray topographic image contrast variation of screw-type basal plane dislocations located at different depths below the crystal surface in 4H-SiC, 2021, Acta Materialia
Static Performance and Reliability of 4H-SiC Diodes with P+ Regions Formed by Various Profiles and Temperatures, 2022, 2022 IEEE International Reliability Physics Symposium (IRPS)

The scientist frequently collaborates with several co-authors including Balaji Raghothamachar, Yafei Liu, Shanshan Hu, Hongyu Peng, and Qianyu Cheng. Their collaboration counts with these colleagues range widely, indicating ongoing joint research efforts.

Best Publications

Springer handbook of crystal growth

Govindhan Dhanaraj;Kullaiah Byrappa;Vishwanath Prasad;Michael Dudley

515
Citations
Fabrication and characterization of polycrystalline WO3 nanofibers and their application for ammonia sensing.

Guan Wang;Yuan Ji;Xianrong Huang;Xiaoqing Yang

327
Citations
Study of bulk and elementary screw dislocation assisted reverse breakdown in low-voltage (<250 V) 4H-SiC p/sup +/-n junction diodes. I. DC properties

P.G. Neudeck;Wei Huang;M. Dudley

199
Citations
Growth and Characterization of Silicon Carbide Crystals

Govindhan Dhanaraj;Balaji Raghothamachar;Michael Dudley

182
Citations
The mechanism of micropipe nucleation at inclusions in silicon carbide

M. Dudley;X. R. Huang;W. Huang;A. Powell

181
Citations
Breakdown degradation associated with elementary screw dislocations in 4H-SiC p+n junction rectifiers

P.G Neudeck;W Huang;M Dudley

174
Citations
Seeded growth of AlN bulk crystals in m- and c-orientation

P. Lu;R. Collazo;R.F. Dalmau;G. Durkaya

170
Citations
White-beam synchrotron topographic studies of defects in 6H-SiC single crystals

M Dudley;Shaoping Wang;Wei Huang;C H Carter

167
Citations
Direct evidence of micropipe-related pure superscrew dislocations in SiC

X. R. Huang;M. Dudley;W. M. Vetter;W. Huang

164
Citations
Recombination-enhanced defect motion in forward-biased 4H–SiC p-n diodes

M. Skowronski;J. Q. Liu;W. M. Vetter;M. Dudley

162
Citations
Study of the defect elimination mechanisms in aspect ratio trapping Ge growth

J. Bai;J.-S. Park;Z. Cheng;M. Curtin

133
Citations
Report on the growth of bulk aluminum nitride and subsequent substrate preparation

J. Carlos Rojo;Glen A. Slack;Kenneth Morgan;Balaji Raghothamachar

132
Citations
Superscrew dislocation contrast on synchrotron white-beam topographs: an accurate description of the direct dislocation image

X. R. Huang;M. Dudley;W. M. Vetter;W. Huang

116
Citations
Reduction of threading dislocation densities in AlN∕sapphire epilayers driven by growth mode modification

J. Bai;M. Dudley;W. H. Sun;H. M. Wang

110
Citations
VO2 films with strong semiconductor to metal phase transition prepared by the precursor oxidation process

M. Gurvitch;S. Luryi;A. Polyakov;A. Shabalov

105
Citations
Current Status and Emerging Trends in Wide Bandgap (WBG) Semiconductor Power Switching Devices

Krishna Shenai;Michael Dudley;Robert F. Davis

105
Citations
X-ray characterization of bulk AIN single crystals grown by the sublimation technique

B. Raghothamachar;M. Dudley;J.C. Rojo;K. Morgan

97
Citations
Nucleation of threading dislocations in sublimation grown silicon carbide

E. K. Sanchez;J. Q. Liu;M. De Graef;M. Skowronski

93
Citations
Contribution of x-ray topography and high-resolution diffraction to the study of defects in SiC

Michael Dudley;Xian Rong Huang;William M. Vetter

90
Citations
CFD Growth of 3C-SiC on 4H/6H Mesas

Philip G. Neudeck;Andrew J. Trunek;David J. Spry;J. Anthony Powell

86
Citations