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D-Index & Metrics

Materials Science

D-Index
47
Citations
9124
World Ranking
11069
National Ranking
2603

Michael Dudley publication distribution in Materials Science in 2026

The chart shows the distribution of publications by all Research.com ranked scientists in the field of Materials Science in 2026. The highlighted bar marks where Michael Dudley sits on this spectrum.

50–69 publications: 28 scientists 70–89 publications: 152 scientists 90–109 publications: 356 scientists 110–129 publications: 487 scientists 130–149 publications: 723 scientists 150–169 publications: 835 scientists 170–189 publications: 850 scientists 190–209 publications: 891 scientists 210–229 publications: 862 scientists 230–249 publications: 766 scientists 250–269 publications: 726 scientists 270–289 publications: 665 scientists 290–309 publications: 593 scientists 310–329 publications: 537 scientists 330–349 publications: 477 scientists 350–369 publications: 440 scientists 370–389 publications: 356 scientists 390–409 publications: 321 scientists 410–429 publications: 256 scientists 430–449 publications: 246 scientists 450–469 publications: 216 scientists 470–489 publications: 212 scientists 490–509 publications: 174 scientists 510–529 publications: 194 scientists 530–549 publications: 162 scientists 550–569 publications: 131 scientists 570–589 publications: 111 scientists 590–609 publications: 103 scientists 610–629 publications: 99 scientists 630–649 publications: 77 scientists 650–669 publications: 92 scientists 670–689 publications: 56 scientists 690–709 publications: 53 scientists 710–729 publications: 53 scientists 730–749 publications: 38 scientists 750–769 publications: 52 scientists 770–789 publications: 43 scientists 790–809 publications: 38 scientists 810–829 publications: 34 scientists 830–849 publications: 25 scientists 850–869 publications: 18 scientists 870–889 publications: 20 scientists 890–909 publications: 24 scientists 910–929 publications: 27 scientists 930–949 publications: 20 scientists 950–969 publications: 17 scientists 970–989 publications: 10 scientists 990–1,009 publications: 16 scientists 1,010–1,029 publications: 13 scientists 1,030–1,049 publications: 12 scientists 1,050–1,069 publications: 9 scientists 1,070–1,089 publications: 8 scientists 1,090–1,109 publications: 7 scientists 1,110–1,129 publications: 9 scientists 1,130–1,149 publications: 2 scientists 1,150–1,162 publications: 5 scientists 1,163+ publications: 100 scientists
50 publications 1,163+

This scientist: 512 publications — 87th percentile

87% of scientists in this discipline score the same or lower.

The last bar groups every scientist with 1,163 publications or more.

Michael Dudley D-index placement in Materials Science in 2026

The chart shows the D-index (discipline H-index) distribution of Materials Science scientists ranked by Research.com in 2026. The highlighted bar marks where Michael Dudley sits on this spectrum.

40–41 D-Index: 211 scientists 42–43 D-Index: 450 scientists 44–45 D-Index: 612 scientists 46–47 D-Index: 612 scientists 48–49 D-Index: 598 scientists 50–51 D-Index: 657 scientists 52–53 D-Index: 667 scientists 54–55 D-Index: 621 scientists 56–57 D-Index: 597 scientists 58–59 D-Index: 610 scientists 60–61 D-Index: 587 scientists 62–63 D-Index: 606 scientists 64–65 D-Index: 533 scientists 66–67 D-Index: 490 scientists 68–69 D-Index: 469 scientists 70–71 D-Index: 378 scientists 72–73 D-Index: 421 scientists 74–75 D-Index: 359 scientists 76–77 D-Index: 323 scientists 78–79 D-Index: 299 scientists 80–81 D-Index: 230 scientists 82–83 D-Index: 210 scientists 84–85 D-Index: 195 scientists 86–87 D-Index: 203 scientists 88–89 D-Index: 175 scientists 90–91 D-Index: 175 scientists 92–93 D-Index: 142 scientists 94–95 D-Index: 121 scientists 96–97 D-Index: 117 scientists 98–99 D-Index: 107 scientists 100–101 D-Index: 88 scientists 102–103 D-Index: 85 scientists 104–105 D-Index: 68 scientists 106–107 D-Index: 62 scientists 108–109 D-Index: 57 scientists 110–111 D-Index: 45 scientists 112–113 D-Index: 49 scientists 114–115 D-Index: 50 scientists 116–117 D-Index: 34 scientists 118–119 D-Index: 38 scientists 120–121 D-Index: 37 scientists 122–123 D-Index: 29 scientists 124–125 D-Index: 28 scientists 126–127 D-Index: 24 scientists 128–129 D-Index: 33 scientists 130–131 D-Index: 28 scientists 132–133 D-Index: 21 scientists 134–135 D-Index: 20 scientists 136–137 D-Index: 23 scientists 138–139 D-Index: 17 scientists 140–141 D-Index: 12 scientists 142–143 D-Index: 17 scientists 144–145 D-Index: 21 scientists 146–147 D-Index: 13 scientists 148–149 D-Index: 11 scientists 150–151 D-Index: 14 scientists 152–153 D-Index: 13 scientists 154–155 D-Index: 9 scientists 156–157 D-Index: 10 scientists 158–159 D-Index: 7 scientists 160–161 D-Index: 4 scientists 162–163 D-Index: 4 scientists 164 D-Index: 3 scientists 165+ D-Index: 98 scientists
40 D-Index 165+

This scientist: 47 D-Index — 15th percentile

15% of scientists in this discipline score the same or lower.

The last bar groups every scientist with 165 D-Index or more.

Overview

Michael Dudley is affiliated with Stony Brook University in the United States and specializes in engineering, particularly within the subfields of electrical and electronic engineering, condensed matter physics, atomic and molecular physics and optics, biomedical engineering, and mechanics of materials.

Their research primarily covers topics related to semiconductor technologies and materials. Key areas of focus include:

  • Silicon Carbide Semiconductor Technologies
  • Silicon and Solar Cell Technologies
  • GaN-based semiconductor devices and materials
  • Semiconductor materials and interfaces
  • Thin-Film Transistor Technologies
  • Semiconductor materials and devices
  • Integrated Circuits and Semiconductor Failure Analysis

Michael Dudley has contributed numerous papers, with publications appearing in several academic venues. Frequent publication venues include:

  • ECS Meeting Abstracts
  • ECS Transactions
  • Journal of Electronic Materials
  • Materials Science Forum
  • Defect and Diffusion Forum / Diffusion and Defect Data, Solid State Data. Part A, Defect and Diffusion Forum

Some recent papers authored or co-authored by Michael Dudley include:

  • X-ray topography characterization of gallium nitride substrates for power device development, 2020, Journal of Crystal Growth
  • The improvement of Mo/4H-SiC Schottky diodes via a P2O5 surface passivation treatment, 2020, Journal of Applied Physics
  • Synchrotron X-ray topography characterization of high quality ammonothermal-grown gallium nitride substrates, 2020, Journal of Crystal Growth
  • Synchrotron X-ray topographic image contrast variation of screw-type basal plane dislocations located at different depths below the crystal surface in 4H-SiC, 2021, Acta Materialia
  • Static Performance and Reliability of 4H-SiC Diodes with P+ Regions Formed by Various Profiles and Temperatures, 2022, 2022 IEEE International Reliability Physics Symposium (IRPS)

The scientist frequently collaborates with several co-authors including Balaji Raghothamachar, Yafei Liu, Shanshan Hu, Hongyu Peng, and Qianyu Cheng. Their collaboration counts with these colleagues range widely, indicating ongoing joint research efforts.

Best Publications

  • Springer handbook of crystal growth

    Govindhan Dhanaraj;Kullaiah Byrappa;Vishwanath Prasad;Michael Dudley

  • Fabrication and characterization of polycrystalline WO3 nanofibers and their application for ammonia sensing.

    Guan Wang;Yuan Ji;Xianrong Huang;Xiaoqing Yang

  • Study of bulk and elementary screw dislocation assisted reverse breakdown in low-voltage (<250 V) 4H-SiC p/sup +/-n junction diodes. I. DC properties

    P.G. Neudeck;Wei Huang;M. Dudley

  • Growth and Characterization of Silicon Carbide Crystals

    Govindhan Dhanaraj;Balaji Raghothamachar;Michael Dudley

  • The mechanism of micropipe nucleation at inclusions in silicon carbide

    M. Dudley;X. R. Huang;W. Huang;A. Powell

  • Breakdown degradation associated with elementary screw dislocations in 4H-SiC p+n junction rectifiers

    P.G Neudeck;W Huang;M Dudley

  • Seeded growth of AlN bulk crystals in m- and c-orientation

    P. Lu;R. Collazo;R.F. Dalmau;G. Durkaya

  • White-beam synchrotron topographic studies of defects in 6H-SiC single crystals

    M Dudley;Shaoping Wang;Wei Huang;C H Carter

  • Direct evidence of micropipe-related pure superscrew dislocations in SiC

    X. R. Huang;M. Dudley;W. M. Vetter;W. Huang

  • Recombination-enhanced defect motion in forward-biased 4H–SiC p-n diodes

    M. Skowronski;J. Q. Liu;W. M. Vetter;M. Dudley

  • Study of the defect elimination mechanisms in aspect ratio trapping Ge growth

    J. Bai;J.-S. Park;Z. Cheng;M. Curtin

  • Report on the growth of bulk aluminum nitride and subsequent substrate preparation

    J. Carlos Rojo;Glen A. Slack;Kenneth Morgan;Balaji Raghothamachar

  • Superscrew dislocation contrast on synchrotron white-beam topographs: an accurate description of the direct dislocation image

    X. R. Huang;M. Dudley;W. M. Vetter;W. Huang

  • Reduction of threading dislocation densities in AlN∕sapphire epilayers driven by growth mode modification

    J. Bai;M. Dudley;W. H. Sun;H. M. Wang

  • VO2 films with strong semiconductor to metal phase transition prepared by the precursor oxidation process

    M. Gurvitch;S. Luryi;A. Polyakov;A. Shabalov

  • Current Status and Emerging Trends in Wide Bandgap (WBG) Semiconductor Power Switching Devices

    Krishna Shenai;Michael Dudley;Robert F. Davis

  • X-ray characterization of bulk AIN single crystals grown by the sublimation technique

    B. Raghothamachar;M. Dudley;J.C. Rojo;K. Morgan

  • Nucleation of threading dislocations in sublimation grown silicon carbide

    E. K. Sanchez;J. Q. Liu;M. De Graef;M. Skowronski

  • Contribution of x-ray topography and high-resolution diffraction to the study of defects in SiC

    Michael Dudley;Xian Rong Huang;William M. Vetter

  • CFD Growth of 3C-SiC on 4H/6H Mesas

    Philip G. Neudeck;Andrew J. Trunek;David J. Spry;J. Anthony Powell

Frequent Co-Authors

Philip G. Neudeck
Philip G. Neudeck Glenn Research Center
James H. Edgar
James H. Edgar Kansas State University
Martin Kuball
Martin Kuball University of Bristol
Zlatko Sitar
Zlatko Sitar North Carolina State University
Ian Baker
Ian Baker Dartmouth College
Vishwanath Prasad
Vishwanath Prasad University of North Texas
Marek Skowronski
Marek Skowronski Carnegie Mellon University
Robert F. Davis
Robert F. Davis Carnegie Mellon University
Dong Su
Dong Su Chinese Academy of Sciences
Yimei Zhu
Yimei Zhu Brookhaven National Laboratory

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