World's Best Scientists 2026 revealed!

D-Index & Metrics

Materials Science

D-Index
46
Citations
10340
World Ranking
11333
National Ranking
701

Yoshinao Kumagai publication distribution in Materials Science in 2026

The chart shows the distribution of publications by all Research.com ranked scientists in the field of Materials Science in 2026. The highlighted bar marks where Yoshinao Kumagai sits on this spectrum.

50–69 publications: 28 scientists 70–89 publications: 152 scientists 90–109 publications: 356 scientists 110–129 publications: 487 scientists 130–149 publications: 723 scientists 150–169 publications: 835 scientists 170–189 publications: 850 scientists 190–209 publications: 891 scientists 210–229 publications: 862 scientists 230–249 publications: 766 scientists 250–269 publications: 726 scientists 270–289 publications: 665 scientists 290–309 publications: 593 scientists 310–329 publications: 537 scientists 330–349 publications: 477 scientists 350–369 publications: 440 scientists 370–389 publications: 356 scientists 390–409 publications: 321 scientists 410–429 publications: 256 scientists 430–449 publications: 246 scientists 450–469 publications: 216 scientists 470–489 publications: 212 scientists 490–509 publications: 174 scientists 510–529 publications: 194 scientists 530–549 publications: 162 scientists 550–569 publications: 131 scientists 570–589 publications: 111 scientists 590–609 publications: 103 scientists 610–629 publications: 99 scientists 630–649 publications: 77 scientists 650–669 publications: 92 scientists 670–689 publications: 56 scientists 690–709 publications: 53 scientists 710–729 publications: 53 scientists 730–749 publications: 38 scientists 750–769 publications: 52 scientists 770–789 publications: 43 scientists 790–809 publications: 38 scientists 810–829 publications: 34 scientists 830–849 publications: 25 scientists 850–869 publications: 18 scientists 870–889 publications: 20 scientists 890–909 publications: 24 scientists 910–929 publications: 27 scientists 930–949 publications: 20 scientists 950–969 publications: 17 scientists 970–989 publications: 10 scientists 990–1,009 publications: 16 scientists 1,010–1,029 publications: 13 scientists 1,030–1,049 publications: 12 scientists 1,050–1,069 publications: 9 scientists 1,070–1,089 publications: 8 scientists 1,090–1,109 publications: 7 scientists 1,110–1,129 publications: 9 scientists 1,130–1,149 publications: 2 scientists 1,150–1,162 publications: 5 scientists 1,163+ publications: 100 scientists
50 publications 1,163+

This scientist: 325 publications — 65th percentile

65% of scientists in this discipline score the same or lower.

The last bar groups every scientist with 1,163 publications or more.

Yoshinao Kumagai D-index placement in Materials Science in 2026

The chart shows the D-index (discipline H-index) distribution of Materials Science scientists ranked by Research.com in 2026. The highlighted bar marks where Yoshinao Kumagai sits on this spectrum.

40–41 D-Index: 211 scientists 42–43 D-Index: 450 scientists 44–45 D-Index: 612 scientists 46–47 D-Index: 612 scientists 48–49 D-Index: 598 scientists 50–51 D-Index: 657 scientists 52–53 D-Index: 667 scientists 54–55 D-Index: 621 scientists 56–57 D-Index: 597 scientists 58–59 D-Index: 610 scientists 60–61 D-Index: 587 scientists 62–63 D-Index: 606 scientists 64–65 D-Index: 533 scientists 66–67 D-Index: 490 scientists 68–69 D-Index: 469 scientists 70–71 D-Index: 378 scientists 72–73 D-Index: 421 scientists 74–75 D-Index: 359 scientists 76–77 D-Index: 323 scientists 78–79 D-Index: 299 scientists 80–81 D-Index: 230 scientists 82–83 D-Index: 210 scientists 84–85 D-Index: 195 scientists 86–87 D-Index: 203 scientists 88–89 D-Index: 175 scientists 90–91 D-Index: 175 scientists 92–93 D-Index: 142 scientists 94–95 D-Index: 121 scientists 96–97 D-Index: 117 scientists 98–99 D-Index: 107 scientists 100–101 D-Index: 88 scientists 102–103 D-Index: 85 scientists 104–105 D-Index: 68 scientists 106–107 D-Index: 62 scientists 108–109 D-Index: 57 scientists 110–111 D-Index: 45 scientists 112–113 D-Index: 49 scientists 114–115 D-Index: 50 scientists 116–117 D-Index: 34 scientists 118–119 D-Index: 38 scientists 120–121 D-Index: 37 scientists 122–123 D-Index: 29 scientists 124–125 D-Index: 28 scientists 126–127 D-Index: 24 scientists 128–129 D-Index: 33 scientists 130–131 D-Index: 28 scientists 132–133 D-Index: 21 scientists 134–135 D-Index: 20 scientists 136–137 D-Index: 23 scientists 138–139 D-Index: 17 scientists 140–141 D-Index: 12 scientists 142–143 D-Index: 17 scientists 144–145 D-Index: 21 scientists 146–147 D-Index: 13 scientists 148–149 D-Index: 11 scientists 150–151 D-Index: 14 scientists 152–153 D-Index: 13 scientists 154–155 D-Index: 9 scientists 156–157 D-Index: 10 scientists 158–159 D-Index: 7 scientists 160–161 D-Index: 4 scientists 162–163 D-Index: 4 scientists 164 D-Index: 3 scientists 165+ D-Index: 98 scientists
40 D-Index 165+

This scientist: 46 D-Index — 12th percentile

12% of scientists in this discipline score the same or lower.

The last bar groups every scientist with 165 D-Index or more.

Overview

Yoshinao Kumagai is affiliated with the Tokyo University of Agriculture and Technology in Japan and has contributed extensively to the field of materials science, with a particular focus on Ga2O3 and related materials. Their research encompasses a range of subfields including materials chemistry, electronic, optical and magnetic materials, renewable energy and sustainability, electrical and electronic engineering, and condensed matter physics.

The scientist's work covers numerous main topics such as:

  • Ga2O3 and related materials
  • ZnO doping and properties
  • Advanced photocatalysis techniques
  • GaN-based semiconductor devices and materials
  • Electronic and structural properties of oxides
  • Semiconductor materials and devices
  • Luminescence properties of advanced materials

Kumagai has published a significant number of papers in various academic venues, with frequent contributions to:

  • Japanese Journal of Applied Physics
  • Applied Physics Letters
  • Journal of Crystal Growth
  • Applied Physics Express
  • physica status solidi (b)

Some recent papers authored include:

  • "Anisotropic complex refractive index of β-Ga2O3 bulk and epilayer evaluated by terahertz time-domain spectroscopy" (2021, Applied Physics Letters)
  • "Vertical β-Ga2O3 Schottky barrier diodes with trench staircase field plate" (2022, Applied Physics Express)
  • "Electron paramagnetic resonance and theoretical study of gallium vacancy in β-Ga2O3" (2020, Applied Physics Letters)
  • "Effect of substrate orientation on homoepitaxial growth of β-Ga2O3 by halide vapor phase epitaxy" (2022, Applied Physics Letters)
  • "Aperture-limited conduction and its possible mechanism in ion-implanted current aperture vertical β-Ga2O3 MOSFETs" (2021, Applied Physics Letters)

Frequent collaborators in Kumagai's research activities include:

  • Ken Goto
  • Hisashi Murakami
  • Masataka Higashiwaki
  • Bo Monemar
  • Kazutada Ikenaga

Best Publications

  • Recent progress in Ga2O3 power devices

    Masataka Higashiwaki;Kohei Sasaki;Hisashi Murakami;Yoshinao Kumagai

  • 1-kV vertical Ga2O3 field-plated Schottky barrier diodes

    Keita Konishi;Ken Goto;Hisashi Murakami;Yoshinao Kumagai

  • Preparation of Large Freestanding GaN Substrates by Hydride Vapor Phase Epitaxy Using GaAs as a Starting Substrate

    Kensaku Motoki;Takuji Okahisa;Naoki Matsumoto;Masato Matsushima

  • Homoepitaxial growth of β-Ga2O3 layers by halide vapor phase epitaxy

    Hisashi Murakami;Kazushiro Nomura;Ken Goto;Kohei Sasaki

  • Temperature-dependent capacitance–voltage and current–voltage characteristics of Pt/Ga2O3 (001) Schottky barrier diodes fabricated on n––Ga2O3 drift layers grown by halide vapor phase epitaxy

    Masataka Higashiwaki;Keita Konishi;Kohei Sasaki;Ken Goto

  • State-of-the-art technologies of gallium oxide power devices

    Masataka Higashiwaki;Akito Kuramata;Hisashi Murakami;Yoshinao Kumagai

  • Current status of Ga2O3 power devices

    Masataka Higashiwaki;Hisashi Murakami;Yoshinao Kumagai;Akito Kuramata

  • Anisotropy, phonon modes, and free charge carrier parameters in monoclinic β-gallium oxide single crystals

    M. Schubert;M. Schubert;R. Korlacki;S. Knight;T. Hofmann;T. Hofmann

  • Growth and characterization of freestanding GaN substrates

    Kensaku Motoki;Takuji Okahisa;Seiji Nakahata;Naoki Matsumoto

  • Halide vapor phase epitaxy of Si doped β-Ga2O3 and its electrical properties

    Ken Goto;Keita Konishi;Hisashi Murakami;Yoshinao Kumagai

  • Band-to-band transitions, selection rules, effective mass, and excitonic contributions in monoclinic β − Ga 2 O 3

    Alyssa Mock;Rafał Korlacki;Chad Briley;Vanya Darakchieva

  • Vertical Ga 2 O 3 Schottky Barrier Diodes With Guard Ring Formed by Nitrogen-Ion Implantation

    Chia-Hung Lin;Yohei Yuda;Man Hoi Wong;Mayuko Sato

  • On the origin of the 265 nm absorption band in AlN bulk crystals

    Ramón Collazo;Jinqiao Xie;Benjamin E. Gaddy;Zachary Bryan

  • Acceptor doping of β-Ga2O3 by Mg and N ion implantations

    Man Hoi Wong;Chia-Hung Lin;Akito Kuramata;Shigenobu Yamakoshi

  • Current Aperture Vertical $eta$ -Ga 2 O 3 MOSFETs Fabricated by N- and Si-Ion Implantation Doping

    Man Hoi Wong;Ken Goto;Hisashi Murakami;Yoshinao Kumagai

  • Preparation of a Freestanding AlN Substrate from a Thick AlN Layer Grown by Hydride Vapor Phase Epitaxy on a Bulk AlN Substrate Prepared by Physical Vapor Transport

    Yoshinao Kumagai;Yuki Kubota;Toru Nagashima;Toru Nagashima;Toru Kinoshita

  • Performance and Reliability of Deep-Ultraviolet Light-Emitting Diodes Fabricated on AlN Substrates Prepared by Hydride Vapor Phase Epitaxy

    Toru Kinoshita;Toru Kinoshita;Toshiyuki Obata;Toru Nagashima;Hiroyuki Yanagi

  • Deep-Ultraviolet Light-Emitting Diodes Fabricated on AlN Substrates Prepared by Hydride Vapor Phase Epitaxy

    Toru Kinoshita;Toru Kinoshita;Keiichiro Hironaka;Toshiyuki Obata;Toru Nagashima;Toru Nagashima

  • Thermodynamic study of β-Ga2O3 growth by halide vapor phase epitaxy

    Kazushiro Nomura;Ken Goto;Rie Togashi;Hisashi Murakami

  • Growth of thick AlN layers by hydride vapor-phase epitaxy

    Yoshinao Kumagai;Takayoshi Yamane;Akinori Koukitu

  • Preparation of Large Freestanding GaN Substrates by Hydride Vapor Phase Epitaxy Using GaAs as a Starting Substrate : Semiconductors

    Kensaku Motoki;Takuji Okahisa;Naoki Matsumoto;Masato Matsushima

Frequent Co-Authors

Bo Monemar
Bo Monemar Linköping University
Masataka Higashiwaki
Masataka Higashiwaki Osaka Metropolitan University
Akito Kuramata
Akito Kuramata Novel Crystal Technology, Inc
Shigenobu Yamakoshi
Shigenobu Yamakoshi Fujitsu (Japan)
Man Hoi Wong
Man Hoi Wong Hong Kong University of Science and Technology
Zlatko Sitar
Zlatko Sitar North Carolina State University
Ramon Collazo
Ramon Collazo North Carolina State University
Kohei Sasaki
Kohei Sasaki Novel Crystal Technology, Inc
Mathias Schubert
Mathias Schubert University of Nebraska–Lincoln
Takashi Suemasu
Takashi Suemasu University of Tsukuba

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