Yoshinao Kumagai

Overview

Best Publications

• Recent progress in Ga2O3 power devices

  Masataka Higashiwaki;Kohei Sasaki;Hisashi Murakami;Yoshinao Kumagai

  1141
  Citations

• 1-kV vertical Ga2O3 field-plated Schottky barrier diodes

  Keita Konishi;Ken Goto;Hisashi Murakami;Yoshinao Kumagai

  579
  Citations

• Preparation of Large Freestanding GaN Substrates by Hydride Vapor Phase Epitaxy Using GaAs as a Starting Substrate

  Kensaku Motoki;Takuji Okahisa;Naoki Matsumoto;Masato Matsushima

  501
  Citations

• Homoepitaxial growth of β-Ga2O3 layers by halide vapor phase epitaxy

  Hisashi Murakami;Kazushiro Nomura;Ken Goto;Kohei Sasaki

  425
  Citations

• Temperature-dependent capacitance–voltage and current–voltage characteristics of Pt/Ga2O3 (001) Schottky barrier diodes fabricated on n––Ga2O3 drift layers grown by halide vapor phase epitaxy

  Masataka Higashiwaki;Keita Konishi;Kohei Sasaki;Ken Goto

  398
  Citations

• State-of-the-art technologies of gallium oxide power devices

  Masataka Higashiwaki;Akito Kuramata;Hisashi Murakami;Yoshinao Kumagai

  301
  Citations

• Current status of Ga2O3 power devices

  Masataka Higashiwaki;Hisashi Murakami;Yoshinao Kumagai;Akito Kuramata

  271
  Citations

• Anisotropy, phonon modes, and free charge carrier parameters in monoclinic β-gallium oxide single crystals

  M. Schubert;M. Schubert;R. Korlacki;S. Knight;T. Hofmann;T. Hofmann

  246
  Citations

• Growth and characterization of freestanding GaN substrates

  Kensaku Motoki;Takuji Okahisa;Seiji Nakahata;Naoki Matsumoto

  236
  Citations

• Halide vapor phase epitaxy of Si doped β-Ga2O3 and its electrical properties

  Ken Goto;Keita Konishi;Hisashi Murakami;Yoshinao Kumagai

  206
  Citations

• Band-to-band transitions, selection rules, effective mass, and excitonic contributions in monoclinic β − Ga 2 O 3

  Alyssa Mock;Rafał Korlacki;Chad Briley;Vanya Darakchieva

  203
  Citations

• Vertical Ga 2 O 3 Schottky Barrier Diodes With Guard Ring Formed by Nitrogen-Ion Implantation

  Chia-Hung Lin;Yohei Yuda;Man Hoi Wong;Mayuko Sato

  195
  Citations

• On the origin of the 265 nm absorption band in AlN bulk crystals

  Ramón Collazo;Jinqiao Xie;Benjamin E. Gaddy;Zachary Bryan

  194
  Citations

• Acceptor doping of β-Ga2O3 by Mg and N ion implantations

  Man Hoi Wong;Chia-Hung Lin;Akito Kuramata;Shigenobu Yamakoshi

  194
  Citations

• Current Aperture Vertical $eta$ -Ga 2 O 3 MOSFETs Fabricated by N- and Si-Ion Implantation Doping

  Man Hoi Wong;Ken Goto;Hisashi Murakami;Yoshinao Kumagai

  194
  Citations

• Preparation of a Freestanding AlN Substrate from a Thick AlN Layer Grown by Hydride Vapor Phase Epitaxy on a Bulk AlN Substrate Prepared by Physical Vapor Transport

  Yoshinao Kumagai;Yuki Kubota;Toru Nagashima;Toru Nagashima;Toru Kinoshita

  153
  Citations

• Performance and Reliability of Deep-Ultraviolet Light-Emitting Diodes Fabricated on AlN Substrates Prepared by Hydride Vapor Phase Epitaxy

  Toru Kinoshita;Toru Kinoshita;Toshiyuki Obata;Toru Nagashima;Hiroyuki Yanagi

  152
  Citations

• Deep-Ultraviolet Light-Emitting Diodes Fabricated on AlN Substrates Prepared by Hydride Vapor Phase Epitaxy

  Toru Kinoshita;Toru Kinoshita;Keiichiro Hironaka;Toshiyuki Obata;Toru Nagashima;Toru Nagashima

  148
  Citations

• Thermodynamic study of β-Ga2O3 growth by halide vapor phase epitaxy

  Kazushiro Nomura;Ken Goto;Rie Togashi;Hisashi Murakami

  146
  Citations

• Growth of thick AlN layers by hydride vapor-phase epitaxy

  Yoshinao Kumagai;Takayoshi Yamane;Akinori Koukitu

  125
  Citations

• Preparation of Large Freestanding GaN Substrates by Hydride Vapor Phase Epitaxy Using GaAs as a Starting Substrate : Semiconductors

  Kensaku Motoki;Takuji Okahisa;Naoki Matsumoto;Masato Matsushima

  0
  Citations