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Masataka Higashiwaki

Masataka Higashiwaki

National Institute of Information and Communications Technology
Japan

Electronics and Electrical Engineering

Japan

2023

D-Index & Metrics D-index (Discipline H-index) only includes papers and citation values for an examined discipline in contrast to General H-index which accounts for publications across all disciplines.

Discipline name Citations Publications World Ranking National Ranking

Electronics and Electrical Engineering D-index 57 Citations 12,502 212 World Ranking 1161 National Ranking 42

Materials Science D-index 62 Citations 14,150 247 World Ranking 3877 National Ranking 203

Research.com Recognitions

Awards & Achievements

2023 - Research.com Electronics and Electrical Engineering in Japan Leader Award

Overview

What is he best known for?

The fields of study Masataka Higashiwaki is best known for:

Semiconductor
Silicon
Transistor

A majority of his Voltage research is a blend of other scientific areas, such as Breakdown voltage, Dielectric and Field-effect transistor. In his works, he performs multidisciplinary study on Dielectric and Voltage. As part of his MOSFET and Field-effect transistor and Transistor studies, he is studying Transistor. His study deals with a combination of MOSFET and Transistor. His research is interdisciplinary, bridging the disciplines of Silicon and Optoelectronics. He performs integrative Nanotechnology and Engineering physics research in his work. Masataka Higashiwaki undertakes multidisciplinary investigations into Engineering physics and Nanotechnology in his work. His Metallurgy study frequently draws parallels with other fields, such as Gallium. Gallium and Gallium oxide are frequently intertwined in his study.

His most cited work include:

Gallium oxide (Ga₂O₃) metal-semiconductor field-effect transistors on single-crystal β-Ga₂O₃ (010) substrates (1183 citations)
Recent progress in Ga₂O₃power devices (687 citations)
Ultrawide‐Bandgap Semiconductors: Research Opportunities and Challenges (683 citations)

What are the main themes of his work throughout his whole career to date

His research brings together the fields of Chemical vapor deposition and Optoelectronics. His multidisciplinary approach integrates Nanotechnology and Engineering physics in his work. In his work, Masataka Higashiwaki performs multidisciplinary research in Engineering physics and Nanotechnology. Layer (electronics) and Passivation are frequently intertwined in his study. His research links Layer (electronics) with Passivation. Many of his studies involve connections with topics such as Cutoff frequency and Electrical engineering. His study brings together the fields of Electrical engineering and Cutoff frequency. His Voltage study frequently intersects with other fields, such as Transconductance. Masataka Higashiwaki connects Transconductance with Transistor in his study.

Masataka Higashiwaki most often published in these fields:

Optoelectronics (83.61%)
Nanotechnology (55.74%)
Layer (electronics) (51.64%)

This overview was generated by a machine learning system which analysed the scientist’s body of work. If you have any feedback, you can contact us here.

Best Publications

Gallium oxide (Ga2O3) metal-semiconductor field-effect transistors on single-crystal β-Ga2O3 (010) substrates

Masataka Higashiwaki;Kohei Sasaki;Akito Kuramata;Takekazu Masui.
Applied Physics Letters (2012)

1543 Citations

Recent progress in Ga2O3 power devices

Masataka Higashiwaki;Kohei Sasaki;Hisashi Murakami;Yoshinao Kumagai.
Semiconductor Science and Technology (2016)

742 Citations

Ultrawide-Bandgap Semiconductors: Research Opportunities and Challenges

J. Y. Tsao;S. Chowdhury;M. A. Hollis;D. Jena.
Advanced electronic materials (2018)

706 Citations

Depletion-mode Ga2O3 metal-oxide-semiconductor field-effect transistors on β-Ga2O3 (010) substrates and temperature dependence of their device characteristics

Masataka Higashiwaki;Kohei Sasaki;Takafumi Kamimura;Man Hoi Wong.
Applied Physics Letters (2013)

569 Citations

Guest Editorial: The dawn of gallium oxide microelectronics

Masataka Higashiwaki;Gregg H. Jessen.
Applied Physics Letters (2018)

436 Citations

Field-Plated Ga 2 O 3 MOSFETs With a Breakdown Voltage of Over 750 V

ManHoi Wong;Kohei Sasaki;Akito Kuramata;Shigenobu Yamakoshi.
The Japan Society of Applied Physics (2016)

429 Citations

Development of gallium oxide power devices

Masataka Higashiwaki;Kohei Sasaki;Akito Kuramata;Takekazu Masui.
Physica Status Solidi (a) (2014)

421 Citations

1-kV vertical Ga2O3 field-plated Schottky barrier diodes

Keita Konishi;Ken Goto;Hisashi Murakami;Yoshinao Kumagai.
Applied Physics Letters (2017)

374 Citations

$\hbox{Ga}_{2} \hbox{O}_{3}$ Schottky Barrier Diodes Fabricated by Using Single-Crystal $eta$ – $\hbox{Ga}_{2} \hbox{O}_{3}$ (010) Substrates

K. Sasaki;M. Higashiwaki;A. Kuramata;T. Masui.
IEEE Electron Device Letters (2013)

343 Citations

Anisotropic thermal conductivity in single crystal β-gallium oxide

Zhi Guo;Amit Verma;Xufei Wu;Fangyuan Sun.
Applied Physics Letters (2015)

311 Citations

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