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Masataka Higashiwaki

Masataka Higashiwaki

D-Index & Metrics

Electronics and Electrical Engineering

D-Index
64
Citations
19480
World Ranking
1271
National Ranking
36

Materials Science

D-Index
73
Citations
21991
World Ranking
3797
National Ranking
166

Overview

Masataka Higashiwaki is affiliated with the National Institute of Information and Communications Technology in Japan. Their research contributions primarily focus on materials science, with a particular emphasis on the study of semiconductor materials and devices.

Their work extensively covers several main and subfields of study including materials chemistry, electronic, optical and magnetic materials, electrical and electronic engineering, renewable energy, sustainability and the environment, and condensed matter physics.

Key research topics addressed by Masataka Higashiwaki include Ga2O3 and related materials, ZnO doping and properties, electronic and structural properties of oxides, advanced photocatalysis techniques, semiconductor materials and devices, GaN-based semiconductor devices and materials, as well as perovskite materials and applications.

The scientist has published numerous papers in well-known academic venues. Frequent publication venues include:

  • Applied Physics Letters
  • Japanese Journal of Applied Physics
  • Journal of Applied Physics
  • Applied Physics Express
  • APL Materials

Selected recent papers by Masataka Higashiwaki illustrate the scope and focus of their research:

  • β-Ga2O3 material properties, growth technologies, and devices: a review (2022, AAPPS bulletin)
  • Ultrawide bandgap semiconductors (2021, Applied Physics Letters)

Other papers of relevance in their research area but not authored by them include:

  • β-Gallium oxide power electronics (2022, APL Materials)
  • Vertical β-Ga₂O₃ Power Transistors: A Review (2020, IEEE Transactions on Electron Devices)
  • Wide bandgap semiconductor materials and devices (2022, Journal of Applied Physics)

Frequent coauthors in their research collaborations include:

  • Yoshinao Kumagai (14 joint publications)
  • Man Hoi Wong (8 joint publications)
  • Hisashi Murakami (7 joint publications)
  • Ken Goto (7 joint publications)
  • Takafumi Kamimura (5 joint publications)

Best Publications

  • Gallium oxide (Ga2O3) metal-semiconductor field-effect transistors on single-crystal β-Ga2O3 (010) substrates

    Masataka Higashiwaki;Kohei Sasaki;Akito Kuramata;Takekazu Masui

  • Ultrawide-Bandgap Semiconductors: Research Opportunities and Challenges

    J. Y. Tsao;S. Chowdhury;M. A. Hollis;D. Jena

  • Recent progress in Ga2O3 power devices

    Masataka Higashiwaki;Kohei Sasaki;Hisashi Murakami;Yoshinao Kumagai

  • Depletion-mode Ga2O3 metal-oxide-semiconductor field-effect transistors on β-Ga2O3 (010) substrates and temperature dependence of their device characteristics

    Masataka Higashiwaki;Kohei Sasaki;Takafumi Kamimura;Man Hoi Wong

  • Guest Editorial: The dawn of gallium oxide microelectronics

    Masataka Higashiwaki;Gregg H. Jessen

  • Development of gallium oxide power devices

    Masataka Higashiwaki;Kohei Sasaki;Akito Kuramata;Takekazu Masui

  • β-Gallium oxide power electronics

    Unknown

  • 1-kV vertical Ga2O3 field-plated Schottky barrier diodes

    Keita Konishi;Ken Goto;Hisashi Murakami;Yoshinao Kumagai

  • Field-Plated Ga 2 O 3 MOSFETs With a Breakdown Voltage of Over 750 V

    ManHoi Wong;Kohei Sasaki;Akito Kuramata;Shigenobu Yamakoshi

  • Anisotropic thermal conductivity in single crystal β-gallium oxide

    Zhi Guo;Amit Verma;Xufei Wu;Fangyuan Sun

  • $\hbox{Ga}_{2} \hbox{O}_{3}$ Schottky Barrier Diodes Fabricated by Using Single-Crystal $eta$ – $\hbox{Ga}_{2} \hbox{O}_{3}$ (010) Substrates

    K. Sasaki;M. Higashiwaki;A. Kuramata;T. Masui

  • Homoepitaxial growth of β-Ga2O3 layers by halide vapor phase epitaxy

    Hisashi Murakami;Kazushiro Nomura;Ken Goto;Kohei Sasaki

  • Temperature-dependent capacitance–voltage and current–voltage characteristics of Pt/Ga2O3 (001) Schottky barrier diodes fabricated on n––Ga2O3 drift layers grown by halide vapor phase epitaxy

    Masataka Higashiwaki;Keita Konishi;Kohei Sasaki;Ken Goto

  • Correlation between blue luminescence intensity and resistivity in β-Ga2O3 single crystals

    T. Onuma;S. Fujioka;T. Yamaguchi;M. Higashiwaki

  • Valence band ordering in β-Ga2O3 studied by polarized transmittance and reflectance spectroscopy

    Takeyoshi Onuma;Takeyoshi Onuma;Shingo Saito;Kohei Sasaki;Tatekazu Masui

  • Si-Ion Implantation Doping in β-Ga2O3 and Its Application to Fabrication of Low-Resistance Ohmic Contacts

    Kohei Sasaki;Masataka Higashiwaki;Akito Kuramata;Takekazu Masui

  • MBE grown Ga2O3 and its power device applications

    Kohei Sasaki;Masataka Higashiwaki;Masataka Higashiwaki;Akito Kuramata;Takekazu Masui

  • State-of-the-art technologies of gallium oxide power devices

    Masataka Higashiwaki;Akito Kuramata;Hisashi Murakami;Yoshinao Kumagai

  • Current status of Ga2O3 power devices

    Masataka Higashiwaki;Hisashi Murakami;Yoshinao Kumagai;Akito Kuramata

  • Anisotropic Thermal Conductivity in Single Crystal beta-Gallium Oxide

    Zhi Guo;Amit Verma;Fangyuan Sun;Austin Hickman

  • First Demonstration of Ga 2 O 3 Trench MOS-Type Schottky Barrier Diodes

    Kohei Sasaki;Daiki Wakimoto;Quang Tu Thieu;Yuki Koishikawa

Frequent Co-Authors

Akito Kuramata
Akito Kuramata Novel Crystal Technology, Inc
Kohei Sasaki
Kohei Sasaki Novel Crystal Technology, Inc
Shigenobu Yamakoshi
Shigenobu Yamakoshi Fujitsu (Japan)
Man Hoi Wong
Man Hoi Wong Hong Kong University of Science and Technology
Yoshinao Kumagai
Yoshinao Kumagai Tokyo University of Agriculture and Technology
Toshiaki Matsui
Toshiaki Matsui National Institute of Information and Communications Technology
Takashi Mimura
Takashi Mimura Fujitsu (Japan)
Bo Monemar
Bo Monemar Linköping University
Yoshiaki Nakata
Yoshiaki Nakata University of Tokyo
Umesh K. Mishra
Umesh K. Mishra University of California, Santa Barbara

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