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Man Hoi Wong

D-Index & Metrics

Discipline name D-Index World Ranking Current World Ranking National Ranking Current National Ranking Publications Citations
Electronics and Electrical Engineering 43 3905 3748 605 603 151 7408

Man Hoi Wong publications per year

The chart shows the history of publications by Man Hoi Wong between 2003 and 2025, highlighting the no. of papers published in each year and offering an overview of the publication velocity of this scholar. Man Hoi Wong published across 23 years, from 2003 to 2025, averaging 8 papers a year. Output peaked at 19 publications in 2012. 16 of the 185 publications appeared in the last two years.

No. of publications
5 10 15
Bar chart. Horizontal axis: year, 2003 to 2025. Vertical axis: number of publications, 0 to 19. Peak 19 publications in 2012. 2003: 3 publications 2004: 2 publications 2005: 3 publications 2006: 1 publication 2007: 9 publications 2008: 7 publications 2009: 4 publications 2010: 5 publications 2011: 11 publications 2012: 19 publications 2013: 17 publications 2014: 4 publications 2015: 4 publications 2016: 9 publications 2017: 13 publications 2018: 11 publications 2019: 17 publications 2020: 13 publications 2021: 5 publications 2022: 4 publications 2023: 8 publications 2024: 7 publications 2025: 9 publications
2003 2025

185 publications in total across all disciplines

View publications per year as a table
Man Hoi Wong: publications per year, 2003 to 2025
Year Publications
2003 3
2004 2
2005 3
2006 1
2007 9
2008 7
2009 4
2010 5
2011 11
2012 19
2013 17
2014 4
2015 4
2016 9
2017 13
2018 11
2019 17
2020 13
2021 5
2022 4
2023 8
2024 7
2025 9
Total 185
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Man Hoi Wong publication distribution in Electronics and Electrical Engineering in 2026

The chart shows the distribution of publications by all Research.com ranked scientists in the field of Electronics and Electrical Engineering in 2026. The highlighted bar marks where Man Hoi Wong sits on this spectrum.

No. of scientists
100 200 300 400
Bar chart with 53 bars. Horizontal axis: publications, 34–53 to 1,065+. Vertical axis: number of scientists, 0 to 445. Most scientists, 445, have 174–193 publications. The last bar groups every scientist with 1,065 publications or more. The highlighted bar, 134–153 publications, is where this scientist sits. 34–53 publications: 24 scientists 54–73 publications: 52 scientists 74–93 publications: 114 scientists 94–113 publications: 203 scientists 114–133 publications: 269 scientists 134–153 publications: 355 scientists 154–173 publications: 403 scientists 174–193 publications: 445 scientists 194–213 publications: 430 scientists 214–233 publications: 431 scientists 234–253 publications: 399 scientists 254–273 publications: 366 scientists 274–293 publications: 335 scientists 294–313 publications: 300 scientists 314–333 publications: 276 scientists 334–353 publications: 250 scientists 354–373 publications: 214 scientists 374–393 publications: 187 scientists 394–413 publications: 152 scientists 414–433 publications: 169 scientists 434–453 publications: 147 scientists 454–473 publications: 111 scientists 474–493 publications: 117 scientists 494–513 publications: 103 scientists 514–533 publications: 99 scientists 534–553 publications: 92 scientists 554–573 publications: 75 scientists 574–593 publications: 58 scientists 594–613 publications: 69 scientists 614–633 publications: 50 scientists 634–653 publications: 62 scientists 654–673 publications: 54 scientists 674–693 publications: 44 scientists 694–713 publications: 37 scientists 714–733 publications: 28 scientists 734–753 publications: 26 scientists 754–773 publications: 26 scientists 774–793 publications: 19 scientists 794–813 publications: 23 scientists 814–833 publications: 20 scientists 834–853 publications: 16 scientists 854–873 publications: 20 scientists 874–893 publications: 11 scientists 894–913 publications: 11 scientists 914–933 publications: 16 scientists 934–953 publications: 13 scientists 954–973 publications: 10 scientists 974–993 publications: 11 scientists 994–1,013 publications: 9 scientists 1,014–1,033 publications: 9 scientists 1,034–1,053 publications: 10 scientists 1,054–1,064 publications: 6 scientists 1,065+ publications: 99 scientists
34–53 publications 1,065+

This scientist: 151 publications — 14th percentile

14% of scientists in this discipline score the same or lower.

The last bar groups every scientist with 1,065 publications or more.

View publications distribution as a table
Number of Electronics and Electrical Engineering scientists by publication count, Research.com 2026 ranking edition. Based on 6,875 ranked scientists.
Publications Scientists This scientist
34–53 24
54–73 52
74–93 114
94–113 203
114–133 269
134–153 355 151
154–173 403
174–193 445
194–213 430
214–233 431
234–253 399
254–273 366
274–293 335
294–313 300
314–333 276
334–353 250
354–373 214
374–393 187
394–413 152
414–433 169
434–453 147
454–473 111
474–493 117
494–513 103
514–533 99
534–553 92
554–573 75
574–593 58
594–613 69
614–633 50
634–653 62
654–673 54
674–693 44
694–713 37
714–733 28
734–753 26
754–773 26
774–793 19
794–813 23
814–833 20
834–853 16
854–873 20
874–893 11
894–913 11
914–933 16
934–953 13
954–973 10
974–993 11
994–1,013 9
1,014–1,033 9
1,034–1,053 10
1,054–1,064 6
1,065+ 99
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Man Hoi Wong D-index placement in Electronics and Electrical Engineering in 2026

The chart shows the D-index (discipline H-index) distribution of Electronics and Electrical Engineering scientists ranked by Research.com in 2026. The highlighted bar marks where Man Hoi Wong sits on this spectrum.

No. of scientists
50 100 150 200 250
Bar chart with 82 bars. Horizontal axis: D-Index, 30 to 111+. Vertical axis: number of scientists, 0 to 263. Most scientists, 263, have 32 D-Index. The last bar groups every scientist with 111 D-Index or more. The highlighted bar, 43 D-Index, is where this scientist sits. 30 D-Index: 178 scientists 31 D-Index: 257 scientists 32 D-Index: 263 scientists 33 D-Index: 262 scientists 34 D-Index: 244 scientists 35 D-Index: 236 scientists 36 D-Index: 211 scientists 37 D-Index: 220 scientists 38 D-Index: 214 scientists 39 D-Index: 214 scientists 40 D-Index: 205 scientists 41 D-Index: 187 scientists 42 D-Index: 194 scientists 43 D-Index: 201 scientists 44 D-Index: 155 scientists 45 D-Index: 189 scientists 46 D-Index: 148 scientists 47 D-Index: 160 scientists 48 D-Index: 134 scientists 49 D-Index: 130 scientists 50 D-Index: 141 scientists 51 D-Index: 156 scientists 52 D-Index: 108 scientists 53 D-Index: 130 scientists 54 D-Index: 112 scientists 55 D-Index: 97 scientists 56 D-Index: 111 scientists 57 D-Index: 102 scientists 58 D-Index: 108 scientists 59 D-Index: 120 scientists 60 D-Index: 103 scientists 61 D-Index: 93 scientists 62 D-Index: 92 scientists 63 D-Index: 74 scientists 64 D-Index: 77 scientists 65 D-Index: 73 scientists 66 D-Index: 64 scientists 67 D-Index: 69 scientists 68 D-Index: 60 scientists 69 D-Index: 39 scientists 70 D-Index: 57 scientists 71 D-Index: 59 scientists 72 D-Index: 46 scientists 73 D-Index: 49 scientists 74 D-Index: 38 scientists 75 D-Index: 35 scientists 76 D-Index: 32 scientists 77 D-Index: 35 scientists 78 D-Index: 31 scientists 79 D-Index: 22 scientists 80 D-Index: 34 scientists 81 D-Index: 31 scientists 82 D-Index: 34 scientists 83 D-Index: 23 scientists 84 D-Index: 18 scientists 85 D-Index: 30 scientists 86 D-Index: 19 scientists 87 D-Index: 19 scientists 88 D-Index: 20 scientists 89 D-Index: 8 scientists 90 D-Index: 17 scientists 91 D-Index: 7 scientists 92 D-Index: 14 scientists 93 D-Index: 9 scientists 94 D-Index: 15 scientists 95 D-Index: 10 scientists 96 D-Index: 12 scientists 97 D-Index: 10 scientists 98 D-Index: 10 scientists 99 D-Index: 12 scientists 100 D-Index: 16 scientists 101 D-Index: 5 scientists 102 D-Index: 7 scientists 103 D-Index: 7 scientists 104 D-Index: 8 scientists 105 D-Index: 9 scientists 106 D-Index: 13 scientists 107 D-Index: 4 scientists 108 D-Index: 5 scientists 109 D-Index: 10 scientists 110 D-Index: 8 scientists 111+ D-Index: 96 scientists
30 D-Index 111+

This scientist: 43 D-Index — 45th percentile

45% of scientists in this discipline score the same or lower.

The last bar groups every scientist with 111 D-Index or more.

View D-Index distribution as a table
Number of Electronics and Electrical Engineering scientists by D-index, Research.com 2026 ranking edition. Based on 6,875 ranked scientists.
D-Index Scientists This scientist
30 178
31 257
32 263
33 262
34 244
35 236
36 211
37 220
38 214
39 214
40 205
41 187
42 194
43 201 43
44 155
45 189
46 148
47 160
48 134
49 130
50 141
51 156
52 108
53 130
54 112
55 97
56 111
57 102
58 108
59 120
60 103
61 93
62 92
63 74
64 77
65 73
66 64
67 69
68 60
69 39
70 57
71 59
72 46
73 49
74 38
75 35
76 32
77 35
78 31
79 22
80 34
81 31
82 34
83 23
84 18
85 30
86 19
87 19
88 20
89 8
90 17
91 7
92 14
93 9
94 15
95 10
96 12
97 10
98 10
99 12
100 16
101 5
102 7
103 7
104 8
105 9
106 13
107 4
108 5
109 10
110 8
111+ 96
Download as CSV

Overview

Man Hoi Wong is affiliated with the Hong Kong University of Science and Technology in China. Their research primarily focuses on materials science and engineering, with particular attention to semiconductor materials and devices.

Their work encompasses several subfields, including materials chemistry, electronic, optical and magnetic materials, renewable energy, sustainability and the environment, electrical and electronic engineering, and atomic and molecular physics and optics.

Key research topics addressed by Man Hoi Wong include:

  • Ga2O3 and related materials
  • ZnO doping and properties
  • Advanced photocatalysis techniques
  • Electronic and structural properties of oxides
  • GaN-based semiconductor devices and materials
  • Semiconductor materials and devices
  • Near-field optical microscopy

Some of the recent publications authored or coauthored by Wong are:

  • Vertical β-Ga₂O₃ Power Transistors: A Review, 2020, IEEE Transactions on Electron Devices
  • Ultrawide-bandgap semiconductors: An overview, 2021, Journal of materials research/Pratt's guide to venture capital sources
  • Aperture-limited conduction and its possible mechanism in ion-implanted current aperture vertical β-Ga2O3 MOSFETs, 2021, Applied Physics Letters

Other relevant publications featuring Wong's contributions include studies on atomic scale defect formation and phase transformation in Si implanted β-Ga2O3 and the atomic scale mechanism of β to γ phase transformation in gallium oxide, published in APL Materials and Applied Physics Letters, respectively.

Wong frequently collaborates with several researchers. Notable coauthors with multiple joint publications include:

  • Masataka Higashiwaki
  • Alexander Senckowski
  • Shivam Sharma
  • Uttam Singisetti
  • Hsien-Lien Huang

Their publications are often found in certain key venues, including:

  • Applied Physics Letters
  • IEEE Transactions on Electron Devices
  • APL Materials
  • Journal of Semiconductors
  • arXiv (Cornell University)

Best Publications

  • Depletion-mode Ga2O3 metal-oxide-semiconductor field-effect transistors on β-Ga2O3 (010) substrates and temperature dependence of their device characteristics

    Masataka Higashiwaki;Kohei Sasaki;Takafumi Kamimura;Man Hoi Wong

  • Field-Plated Ga 2 O 3 MOSFETs With a Breakdown Voltage of Over 750 V

    ManHoi Wong;Kohei Sasaki;Akito Kuramata;Shigenobu Yamakoshi

  • How To Make Ohmic Contacts to Organic Semiconductors

    Yulong Shen;Ahmad R. Hosseini;Man Hoi Wong;George G. Malliaras

  • N-polar GaN∕AlGaN∕GaN high electron mobility transistors

    Siddharth Rajan;Alessandro Chini;Man Hoi Wong;James S. Speck

  • N-polar GaN epitaxy and high electron mobility transistors

    Man Hoi Wong;Stacia Keller;Sansaptak Dasgupta Nidhi;Daniel J Denninghoff

  • Band alignment and electrical properties of Al2O3/β-Ga2O3 heterojunctions

    Takafumi Kamimura;Kohei Sasaki;Man Hoi Wong;Daivasigamani Krishnamurthy

  • CAVET on Bulk GaN Substrates Achieved With MBE-Regrown AlGaN/GaN Layers to Suppress Dispersion

    S. Chowdhury;Man Hoi Wong;B. L. Swenson;U. K. Mishra

  • Vertical Ga 2 O 3 Schottky Barrier Diodes With Guard Ring Formed by Nitrogen-Ion Implantation

    Chia-Hung Lin;Yohei Yuda;Man Hoi Wong;Mayuko Sato

  • Acceptor doping of β-Ga2O3 by Mg and N ion implantations

    Man Hoi Wong;Chia-Hung Lin;Akito Kuramata;Shigenobu Yamakoshi

  • Current Aperture Vertical $eta$ -Ga 2 O 3 MOSFETs Fabricated by N- and Si-Ion Implantation Doping

    Man Hoi Wong;Ken Goto;Hisashi Murakami;Yoshinao Kumagai

  • Enhancement-mode Ga2O3 MOSFETs with Si-ion-implanted source and drain

    Man Hoi Wong;Yoshiaki Nakata;Akito Kuramata;Shigenobu Yamakoshi

  • Current status and scope of gallium nitride-based vertical transistors for high-power electronics application

    Srabanti Chowdhury;Brian L Swenson;Man Hoi Wong;Umesh K Mishra

  • Vertical β -Ga₂O₃ Power Transistors: A Review

    Man Hoi Wong;Masataka Higashiwaki

  • Electron channel mobility in silicon-doped Ga2O3 MOSFETs with a resistive buffer layer

    Man Hoi Wong;Kohei Sasaki;Akito Kuramata;Shigenobu Yamakoshi

  • Radiation hardness of β-Ga2O3 metal-oxide-semiconductor field-effect transistors against gamma-ray irradiation

    Man Hoi Wong;Akinori Takeyama;Takahiro Makino;Takeshi Ohshima

  • Growth and Electrical Characterization of N-face AlGaN/GaN Heterostructures

    S. Rajan;M. Wong;Y. Fu;F. Wu

  • Characterization of channel temperature in Ga2O3 metal-oxide-semiconductor field-effect transistors by electrical measurements and thermal modeling

    Man Hoi Wong;Yoji Morikawa;Kohei Sasaki;Akito Kuramata

  • All-ion-implanted planar-gate current aperture vertical Ga2O3 MOSFETs with Mg-doped blocking layer

    Man Hoi Wong;Ken Goto;Yoji Morikawa;Akito Kuramata

  • Anomalous Fe diffusion in Si-ion-implanted β–Ga2O3 and its suppression in Ga2O3 transistor structures through highly resistive buffer layers

    Man Hoi Wong;Kohei Sasaki;Akito Kuramata;Shigenobu Yamakoshi

  • Enhancement-Mode $eta$ -Ga 2 O 3 Current Aperture Vertical MOSFETs With N-Ion-Implanted Blocker

    Man Hoi Wong;Hisashi Murakami;Yoshinao Kumagai;Masataka Higashiwaki

  • Low nonalloyed Ohmic contact resistance to nitride high electron mobility transistors using N-face growth

    Man Hoi Wong;Yi Pei;Tomás Palacios;Likun Shen

  • Electrochemical growth of ZnO nano-rods on polycrystalline Zn foil

    M H Wong;A Berenov;X Qi;M J Kappers;M J Kappers

  • N-polar GaN/AIGaN/GaN high electron mobility transistors

    Siddharth Rajan;Alessandro Chini;Man Hoi Wong;James S. Speck

Frequent Co-Authors

Masataka Higashiwaki
Masataka Higashiwaki Osaka Metropolitan University
James S. Speck
James S. Speck University of California, Santa Barbara
Umesh K. Mishra
Umesh K. Mishra University of California, Santa Barbara
Akito Kuramata
Akito Kuramata Novel Crystal Technology, Inc
Shigenobu Yamakoshi
Shigenobu Yamakoshi Fujitsu (Japan)
Kohei Sasaki
Kohei Sasaki Novel Crystal Technology, Inc
Yoshinao Kumagai
Yoshinao Kumagai Tokyo University of Agriculture and Technology
Steven P. DenBaars
Steven P. DenBaars University of California, Santa Barbara
Siddharth Rajan
Siddharth Rajan The Ohio State University
Gennadi Bersuker
Gennadi Bersuker The Aerospace Corporation

External Links

Personal website of Man Hoi Wong

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Additionally, short-term certificate programs that pay well can rapidly enhance your technical expertise and job prospects. These certificates often complement a full degree by focusing on high-demand skills, making them perfect for career advancement in electronics and electrical engineering.

Best Scientists Citing Man Hoi Wong

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Publications: 122

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Publications: 101

Stacia Keller

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Publications: 81

Siddharth Rajan

Siddharth Rajan

The Ohio State University

Publications: 64

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Publications: 64

Fan Ren

Fan Ren

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Publications: 63

Stephen J. Pearton

Stephen J. Pearton

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Publications: 52

Yue Hao

Yue Hao

Xidian University

Publications: 50

Steven P. DenBaars

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Publications: 42

Jincheng Zhang

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Publications: 39

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