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Electronics and Electrical Engineering

D-Index
43
Citations
7408
World Ranking
3905
National Ranking
604

Overview

Man Hoi Wong is affiliated with the Hong Kong University of Science and Technology in China. Their research primarily focuses on materials science and engineering, with particular attention to semiconductor materials and devices.

Their work encompasses several subfields, including materials chemistry, electronic, optical and magnetic materials, renewable energy, sustainability and the environment, electrical and electronic engineering, and atomic and molecular physics and optics.

Key research topics addressed by Man Hoi Wong include:

  • Ga2O3 and related materials
  • ZnO doping and properties
  • Advanced photocatalysis techniques
  • Electronic and structural properties of oxides
  • GaN-based semiconductor devices and materials
  • Semiconductor materials and devices
  • Near-field optical microscopy

Some of the recent publications authored or coauthored by Wong are:

  • Vertical β-Ga₂O₃ Power Transistors: A Review, 2020, IEEE Transactions on Electron Devices
  • Ultrawide-bandgap semiconductors: An overview, 2021, Journal of materials research/Pratt's guide to venture capital sources
  • Aperture-limited conduction and its possible mechanism in ion-implanted current aperture vertical β-Ga2O3 MOSFETs, 2021, Applied Physics Letters

Other relevant publications featuring Wong's contributions include studies on atomic scale defect formation and phase transformation in Si implanted β-Ga2O3 and the atomic scale mechanism of β to γ phase transformation in gallium oxide, published in APL Materials and Applied Physics Letters, respectively.

Wong frequently collaborates with several researchers. Notable coauthors with multiple joint publications include:

  • Masataka Higashiwaki
  • Alexander Senckowski
  • Shivam Sharma
  • Uttam Singisetti
  • Hsien-Lien Huang

Their publications are often found in certain key venues, including:

  • Applied Physics Letters
  • IEEE Transactions on Electron Devices
  • APL Materials
  • Journal of Semiconductors
  • arXiv (Cornell University)

Best Publications

  • Depletion-mode Ga2O3 metal-oxide-semiconductor field-effect transistors on β-Ga2O3 (010) substrates and temperature dependence of their device characteristics

    Masataka Higashiwaki;Kohei Sasaki;Takafumi Kamimura;Man Hoi Wong

  • Field-Plated Ga 2 O 3 MOSFETs With a Breakdown Voltage of Over 750 V

    ManHoi Wong;Kohei Sasaki;Akito Kuramata;Shigenobu Yamakoshi

  • How To Make Ohmic Contacts to Organic Semiconductors

    Yulong Shen;Ahmad R. Hosseini;Man Hoi Wong;George G. Malliaras

  • N-polar GaN∕AlGaN∕GaN high electron mobility transistors

    Siddharth Rajan;Alessandro Chini;Man Hoi Wong;James S. Speck

  • N-polar GaN epitaxy and high electron mobility transistors

    Man Hoi Wong;Stacia Keller;Sansaptak Dasgupta Nidhi;Daniel J Denninghoff

  • Band alignment and electrical properties of Al2O3/β-Ga2O3 heterojunctions

    Takafumi Kamimura;Kohei Sasaki;Man Hoi Wong;Daivasigamani Krishnamurthy

  • CAVET on Bulk GaN Substrates Achieved With MBE-Regrown AlGaN/GaN Layers to Suppress Dispersion

    S. Chowdhury;Man Hoi Wong;B. L. Swenson;U. K. Mishra

  • Vertical Ga 2 O 3 Schottky Barrier Diodes With Guard Ring Formed by Nitrogen-Ion Implantation

    Chia-Hung Lin;Yohei Yuda;Man Hoi Wong;Mayuko Sato

  • Acceptor doping of β-Ga2O3 by Mg and N ion implantations

    Man Hoi Wong;Chia-Hung Lin;Akito Kuramata;Shigenobu Yamakoshi

  • Current Aperture Vertical $eta$ -Ga 2 O 3 MOSFETs Fabricated by N- and Si-Ion Implantation Doping

    Man Hoi Wong;Ken Goto;Hisashi Murakami;Yoshinao Kumagai

  • Enhancement-mode Ga2O3 MOSFETs with Si-ion-implanted source and drain

    Man Hoi Wong;Yoshiaki Nakata;Akito Kuramata;Shigenobu Yamakoshi

  • Current status and scope of gallium nitride-based vertical transistors for high-power electronics application

    Srabanti Chowdhury;Brian L Swenson;Man Hoi Wong;Umesh K Mishra

  • Vertical β -Ga₂O₃ Power Transistors: A Review

    Man Hoi Wong;Masataka Higashiwaki

  • Electron channel mobility in silicon-doped Ga2O3 MOSFETs with a resistive buffer layer

    Man Hoi Wong;Kohei Sasaki;Akito Kuramata;Shigenobu Yamakoshi

  • Radiation hardness of β-Ga2O3 metal-oxide-semiconductor field-effect transistors against gamma-ray irradiation

    Man Hoi Wong;Akinori Takeyama;Takahiro Makino;Takeshi Ohshima

  • Growth and Electrical Characterization of N-face AlGaN/GaN Heterostructures

    S. Rajan;M. Wong;Y. Fu;F. Wu

  • Characterization of channel temperature in Ga2O3 metal-oxide-semiconductor field-effect transistors by electrical measurements and thermal modeling

    Man Hoi Wong;Yoji Morikawa;Kohei Sasaki;Akito Kuramata

  • All-ion-implanted planar-gate current aperture vertical Ga2O3 MOSFETs with Mg-doped blocking layer

    Man Hoi Wong;Ken Goto;Yoji Morikawa;Akito Kuramata

  • Anomalous Fe diffusion in Si-ion-implanted β–Ga2O3 and its suppression in Ga2O3 transistor structures through highly resistive buffer layers

    Man Hoi Wong;Kohei Sasaki;Akito Kuramata;Shigenobu Yamakoshi

  • Enhancement-Mode $eta$ -Ga 2 O 3 Current Aperture Vertical MOSFETs With N-Ion-Implanted Blocker

    Man Hoi Wong;Hisashi Murakami;Yoshinao Kumagai;Masataka Higashiwaki

  • Low nonalloyed Ohmic contact resistance to nitride high electron mobility transistors using N-face growth

    Man Hoi Wong;Yi Pei;Tomás Palacios;Likun Shen

  • Electrochemical growth of ZnO nano-rods on polycrystalline Zn foil

    M H Wong;A Berenov;X Qi;M J Kappers;M J Kappers

  • N-polar GaN/AIGaN/GaN high electron mobility transistors

    Siddharth Rajan;Alessandro Chini;Man Hoi Wong;James S. Speck

Frequent Co-Authors

Masataka Higashiwaki
Masataka Higashiwaki Osaka Metropolitan University
James S. Speck
James S. Speck University of California, Santa Barbara
Umesh K. Mishra
Umesh K. Mishra University of California, Santa Barbara
Akito Kuramata
Akito Kuramata Novel Crystal Technology, Inc
Shigenobu Yamakoshi
Shigenobu Yamakoshi Fujitsu (Japan)
Kohei Sasaki
Kohei Sasaki Novel Crystal Technology, Inc
Yoshinao Kumagai
Yoshinao Kumagai Tokyo University of Agriculture and Technology
Steven P. DenBaars
Steven P. DenBaars University of California, Santa Barbara
Siddharth Rajan
Siddharth Rajan The Ohio State University
Gennadi Bersuker
Gennadi Bersuker The Aerospace Corporation

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