D-Index & Metrics Best Publications

D-Index & Metrics D-index (Discipline H-index) only includes papers and citation values for an examined discipline in contrast to General H-index which accounts for publications across all disciplines.

Discipline name D-index D-index (Discipline H-index) only includes papers and citation values for an examined discipline in contrast to General H-index which accounts for publications across all disciplines. Citations Publications World Ranking National Ranking
Electronics and Electrical Engineering D-index 62 Citations 18,984 312 World Ranking 827 National Ranking 397
Materials Science D-index 65 Citations 21,546 348 World Ranking 3233 National Ranking 983

Overview

What is she best known for?

The fields of study she is best known for:

  • Semiconductor
  • Optoelectronics
  • Optics

Stacia Keller mainly focuses on Optoelectronics, Wide-bandgap semiconductor, Chemical vapor deposition, Heterojunction and Transistor. Her Optoelectronics research is multidisciplinary, incorporating perspectives in Molecular beam epitaxy, High-electron-mobility transistor and Breakdown voltage. Stacia Keller has included themes like Quantum well, Gallium nitride and Photoluminescence in her Wide-bandgap semiconductor study.

Her research integrates issues of Sapphire, Metalorganic vapour phase epitaxy, Epitaxy and Thin film in her study of Chemical vapor deposition. Her work deals with themes such as X-ray crystallography, Secondary ion mass spectrometry, Substrate and Analytical chemistry, which intersect with Metalorganic vapour phase epitaxy. The Epitaxy study which covers Dislocation that intersects with Transmission electron microscopy.

Her most cited work include:

  • The impact of surface states on the DC and RF characteristics of AlGaN/GaN HFETs (1061 citations)
  • Role of threading dislocation structure on the x‐ray diffraction peak widths in epitaxial GaN films (752 citations)
  • “S-shaped” temperature-dependent emission shift and carrier dynamics in InGaN/GaN multiple quantum wells (554 citations)

What are the main themes of her work throughout her whole career to date?

Stacia Keller mostly deals with Optoelectronics, Chemical vapor deposition, Metalorganic vapour phase epitaxy, Transistor and Gallium nitride. The study incorporates disciplines such as Quantum well, Layer and High-electron-mobility transistor in addition to Optoelectronics. Her Chemical vapor deposition study combines topics from a wide range of disciplines, such as Indium, Epitaxy, Dielectric and Photoluminescence, Analytical chemistry.

Her study on Metalorganic vapour phase epitaxy also encompasses disciplines like

  • Doping which is related to area like Silicon,
  • Nitride which connect with Substrate. The various areas that she examines in her Transistor study include Ohmic contact and Breakdown voltage. Her Gallium nitride research incorporates themes from Sapphire, Power density and Electrical engineering, Logic gate.

She most often published in these fields:

  • Optoelectronics (68.34%)
  • Chemical vapor deposition (28.70%)
  • Metalorganic vapour phase epitaxy (25.15%)

What were the highlights of her more recent work (between 2018-2021)?

  • Optoelectronics (68.34%)
  • Transistor (22.49%)
  • Gallium nitride (21.60%)

In recent papers she was focusing on the following fields of study:

The scientist’s investigation covers issues in Optoelectronics, Transistor, Gallium nitride, Metalorganic vapour phase epitaxy and Chemical vapor deposition. Her Optoelectronics research integrates issues from Layer and High-electron-mobility transistor. Stacia Keller focuses mostly in the field of Transistor, narrowing it down to topics relating to Capacitance and, in certain cases, Scattering parameters.

Her biological study spans a wide range of topics, including Power density, Atomic physics and Logic gate. Her Metalorganic vapour phase epitaxy study integrates concerns from other disciplines, such as Quantum dot and Photoluminescence. As a member of one scientific family, Stacia Keller mostly works in the field of Chemical vapor deposition, focusing on Sapphire and, on occasion, Morphology, Analytical chemistry and Epitaxy.

Between 2018 and 2021, her most popular works were:

  • W-Band Power Performance of SiN-Passivated N-Polar GaN Deep Recess HEMTs (18 citations)
  • Fabrication of relaxed InGaN pseudo-substrates composed of micron-sized pattern arrays with high fill factors using porous GaN (9 citations)
  • Infrared luminescence from N-polar InN quantum dots and thin films grown by metal organic chemical vapor deposition (9 citations)

In her most recent research, the most cited papers focused on:

  • Semiconductor
  • Optics
  • Photon

Stacia Keller spends much of her time researching Optoelectronics, Transistor, Gallium nitride, Metalorganic vapour phase epitaxy and Superlattice. Stacia Keller interconnects Layer, Porosity and High-electron-mobility transistor in the investigation of issues within Optoelectronics. Her studies deal with areas such as Intermodulation, Distortion, Logic gate and Linearity as well as Gallium nitride.

Her Metalorganic vapour phase epitaxy research is multidisciplinary, incorporating elements of Capacitance, Semiconductor, Capacitor, Dielectric and Wide-bandgap semiconductor. Her Superlattice research is multidisciplinary, relying on both Tetramethylammonium hydroxide, Sheet resistance, Doping and Field-effect transistor. Her Chemical vapor deposition research includes themes of Luminescence, Thin film, Infrared, Thin layers and Quantum dot.

This overview was generated by a machine learning system which analysed the scientist’s body of work. If you have any feedback, you can contact us here.

Best Publications

The impact of surface states on the DC and RF characteristics of AlGaN/GaN HFETs

R. Vetury;N.Q. Zhang;S. Keller;U.K. Mishra.
IEEE Transactions on Electron Devices (2001)

1610 Citations

Role of threading dislocation structure on the x‐ray diffraction peak widths in epitaxial GaN films

B. Heying;X. H. Wu;S. Keller;Y. Li.
Applied Physics Letters (1996)

1090 Citations

“S-shaped” temperature-dependent emission shift and carrier dynamics in InGaN/GaN multiple quantum wells

Yong-Hoon Cho;G. H. Gainer;A. J. Fischer;J. J. Song.
Applied Physics Letters (1998)

837 Citations

Origin of defect-insensitive emission probability in In-containing (Al,In,Ga)N alloy semiconductors.

Shigefusa F. Chichibu;Akira Uedono;Akira Uedono;Takeyoshi Onuma;Benjamin A. Haskell.
Nature Materials (2006)

793 Citations

Defect structure of metal‐organic chemical vapor deposition‐grown epitaxial (0001) GaN/Al2O3

X. H. Wu;L. M. Brown;D. Kapolnek;S. Keller.
Journal of Applied Physics (1996)

576 Citations

Structural origin of V-defects and correlation with localized excitonic centers in InGaN/GaN multiple quantum wells

X. H. Wu;C. R. Elsass;A. Abare;M. Mack.
Applied Physics Letters (1998)

571 Citations

Effective band gap inhomogeneity and piezoelectric field in InGaN/GaN multiquantum well structures

S. F. Chichibu;A. C. Abare;M. S. Minsky;S. Keller.
Applied Physics Letters (1998)

559 Citations

AlGaN/AlN/GaN high-power microwave HEMT

L. Shen;S. Heikman;B. Moran;R. Coffie.
IEEE Electron Device Letters (2001)

548 Citations

High-power AlGaN/GaN HEMTs for Ka-band applications

T. Palacios;A. Chakraborty;S. Rajan;C. Poblenz.
IEEE Electron Device Letters (2005)

536 Citations

High Breakdown Voltage Achieved on AlGaN/GaN HEMTs With Integrated Slant Field Plates

Y. Dora;A. Chakraborty;L. McCarthy;S. Keller.
IEEE Electron Device Letters (2006)

493 Citations

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