World's Best Scientists 2026 revealed!

D-Index & Metrics

Electronics and Electrical Engineering

D-Index
78
Citations
28447
World Ranking
566
National Ranking
255

Materials Science

D-Index
78
Citations
28618
World Ranking
2914
National Ranking
820

Overview

Stacia Keller is affiliated with the University of California, Santa Barbara in the United States. Their research primarily focuses on semiconductor materials and devices, with significant contributions in GaN-based semiconductor devices and materials as well as related areas such as Ga2O3 and ZnO doping and properties.

Their work spans several key fields including Physics and Astronomy, Engineering, and Materials Science. Within these broader fields, Keller specializes in subfields such as Condensed Matter Physics, Electrical and Electronic Engineering, Electronic, Optical and Magnetic Materials, Materials Chemistry, and Atomic and Molecular Physics, and Optics.

Keller's research topics prominently feature GaN-based semiconductor devices and materials, Ga2O3 and related materials, semiconductor quantum structures and devices, radio frequency integrated circuit design, silicon carbide semiconductor technologies, and ZnO doping and properties.

Frequent publication venues for Keller include:

  • Applied Physics Letters
  • Crystals
  • IEEE Electron Device Letters
  • Semiconductor Science and Technology
  • IEEE Microwave and Wireless Technology Letters

Keller has collaborated extensively with several coauthors, including:

  • Umesh K. Mishra
  • Nirupam Hatui
  • Steven P. DenBaars
  • Brian Romanczyk
  • Matthew Guidry

Recent papers authored or coauthored by Keller include:

  • Demonstration of ultra-small (<10 μm) 632 nm red InGaN micro-LEDs with useful on-wafer external quantum efficiency (>0.2%) for mini-displays, 2020, Applied Physics Express
  • W-Band Power Performance of SiN-Passivated N-Polar GaN Deep Recess HEMTs, 2020, IEEE Electron Device Letters
  • High Linearity and High Gain Performance of N-Polar GaN MIS-HEMT at 30 GHz, 2020, IEEE Electron Device Letters
  • Color-tunable <10 μm square InGaN micro-LEDs on compliant GaN-on-porous-GaN pseudo-substrates, 2020, Applied Physics Letters
  • Demonstration of a GaN/AlGaN Superlattice-Based p-Channel FinFET With High ON-Current, 2020, IEEE Electron Device Letters

Best Publications

  • The impact of surface states on the DC and RF characteristics of AlGaN/GaN HFETs

    R. Vetury;N.Q. Zhang;S. Keller;U.K. Mishra

  • Role of threading dislocation structure on the x‐ray diffraction peak widths in epitaxial GaN films

    B. Heying;X. H. Wu;S. Keller;Y. Li

  • “S-shaped” temperature-dependent emission shift and carrier dynamics in InGaN/GaN multiple quantum wells

    Yong-Hoon Cho;G. H. Gainer;A. J. Fischer;J. J. Song

  • Origin of defect-insensitive emission probability in In-containing (Al,In,Ga)N alloy semiconductors.

    Shigefusa F. Chichibu;Akira Uedono;Akira Uedono;Takeyoshi Onuma;Benjamin A. Haskell

  • AlGaN/AlN/GaN high-power microwave HEMT

    L. Shen;S. Heikman;B. Moran;R. Coffie

  • High-power AlGaN/GaN HEMTs for Ka-band applications

    T. Palacios;A. Chakraborty;S. Rajan;C. Poblenz

  • Structural origin of V-defects and correlation with localized excitonic centers in InGaN/GaN multiple quantum wells

    X. H. Wu;C. R. Elsass;A. Abare;M. Mack

  • Defect structure of metal‐organic chemical vapor deposition‐grown epitaxial (0001) GaN/Al2O3

    X. H. Wu;L. M. Brown;D. Kapolnek;S. Keller

  • Effective band gap inhomogeneity and piezoelectric field in InGaN/GaN multiquantum well structures

    S. F. Chichibu;A. C. Abare;M. S. Minsky;S. Keller

  • High Breakdown Voltage Achieved on AlGaN/GaN HEMTs With Integrated Slant Field Plates

    Y. Dora;A. Chakraborty;L. McCarthy;S. Keller

  • Development of gallium-nitride-based light-emitting diodes (LEDs) and laser diodes for energy-efficient lighting and displays

    Steven P. Denbaars;Daniel Feezell;Katheryn Kelchner;Siddha Pimputkar

  • High breakdown voltage AlGaN-GaN HEMTs achieved by multiple field plates

    Huili Xing;Y. Dora;A. Chini;S. Heikman

  • AlGaN/GaN high electron mobility transistors with InGaN back-barriers

    T. Palacios;A. Chakraborty;S. Heikman;S. Keller

  • Growth of Fe doped semi-insulating GaN by metalorganic chemical vapor deposition

    Sten Heikman;Stacia Keller;Steven P. DenBaars;Umesh K. Mishra

  • VERY HIGH BREAKDOWN VOLTAGE AND LARGE TRANSCONDUCTANCE REALIZED ON GAN HETEROJUNCTION FIELD EFFECT TRANSISTORS

    Y.‐F. Wu;B. P. Keller;S. Keller;D. Kapolnek

  • Structural evolution in epitaxial metalorganic chemical vapor deposition grown GaN films on sapphire

    D. Kapolnek;X. H. Wu;B. Heying;S. Keller

  • Anisotropic epitaxial lateral growth in GaN selective area epitaxy

    D. Kapolnek;S. Keller;R. Vetury;R. D. Underwood

  • High-performance (Al,Ga)N-based solar-blind ultraviolet p–i–n detectors on laterally epitaxially overgrown GaN

    G. Parish;S. Keller;P. Kozodoy;J. P. Ibbetson

  • AlN/GaN and (Al,Ga)N/AlN/GaN two-dimensional electron gas structures grown by plasma-assisted molecular-beam epitaxy

    I. P. Smorchkova;L. Chen;T. Mates;L. Shen

  • Coupling of InGaN quantum-well photoluminescence to silver surface plasmons

    I. Gontijo;M. Boroditsky;E. Yablonovitch;S. Keller

Frequent Co-Authors

Umesh K. Mishra
Umesh K. Mishra University of California, Santa Barbara
Steven P. DenBaars
Steven P. DenBaars University of California, Santa Barbara
James S. Speck
James S. Speck University of California, Santa Barbara
Shuji Nakamura
Shuji Nakamura University of California, Santa Barbara
Feng Wu
Feng Wu Huazhong University of Science and Technology
Chi-Kuang Sun
Chi-Kuang Sun National Taiwan University
Siddharth Rajan
Siddharth Rajan The Ohio State University
Arpan Chakraborty
Arpan Chakraborty Apple (United States)
Shigefusa F. Chichibu
Shigefusa F. Chichibu Tohoku University

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