World's Best Scientists 2026 revealed!
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Electronics and Electrical Engineering
USA
2026

D-Index & Metrics

Electronics and Electrical Engineering

D-Index
97
Citations
39363
World Ranking
216
National Ranking
106

Materials Science

D-Index
100
Citations
40753
World Ranking
1045
National Ranking
345

Physics

D-Index
101
Citations
41758
World Ranking
1585
National Ranking
840

Research.com Recognitions

  • 2026 - Research.com Electronics and Electrical Engineering in United States Leader Award

Overview

Debdeep Jena is affiliated with Cornell University in the United States. Their research primarily spans the fields of Engineering and Physics and Astronomy, with focused subfields including Condensed Matter Physics, Mechanics of Materials, and Electrical and Electronic Engineering.

The scientist's work concentrates on several key topics:

  • GaN-based semiconductor devices and materials
  • Metal and Thin Film Mechanics
  • Radio Frequency Integrated Circuit Design

Debdeep Jena has contributed to the scholarly community with publications in venues such as Applied Physics Express. Their recent publication includes the paper titled "AlScN/GaN HEMTs with 4 A/mm on-current and maximum oscillation frequency >130 GHz," published in 2025 in Applied Physics Express. This paper has been cited 14 times.

The researcher collaborates frequently with various coauthors, including:

  • Kazuki Nomoto
  • Joseph Casamento
  • Thai-Son Nguyen
  • Lei Li
  • Hyunjea Lee

Best Publications

  • High-mobility and low-power thin-film transistors based on multilayer MoS2 crystals

    Sunkook Kim;Sunkook Kim;Aniruddha Konar;Wan-Sik Hwang;Jong Hak Lee

  • Two-dimensional semiconductors for transistors

    Manishkumar Chhowalla;Debdeep Jena;Hua Zhang

  • Ultrawide-Bandgap Semiconductors: Research Opportunities and Challenges

    J. Y. Tsao;S. Chowdhury;M. A. Hollis;D. Jena

  • High-detectivity multilayer MoS(2) phototransistors with spectral response from ultraviolet to infrared.

    Woong Choi;Mi Yeon Cho;Aniruddha Konar;Jong Hak Lee

  • Broadband graphene terahertz modulators enabled by intraband transitions

    Berardi Sensale-Rodriguez;Rusen Yan;Michelle M. Kelly;Tian Fang

  • Role of metal contacts in designing high-performance monolayer n-type WSe2 field effect transistors.

    Wei Liu;Jiahao Kang;Deblina Sarkar;Yasin Khatami

  • Computational Study of Metal Contacts to Monolayer Transition-Metal Dichalcogenide Semiconductors

    Jiahao Kang;Wei Liu;Deblina Sarkar;Debdeep Jena

  • Exciton dynamics in suspended monolayer and few-layer MoS₂ 2D crystals

    Hongyan Shi;Rusen Yan;Simone Bertolazzi;Jacopo Brivio

  • Polarization-Induced Hole Doping in Wide–Band-Gap Uniaxial Semiconductor Heterostructures

    John Simon;Vladimir Protasenko;Chuanxin Lian;Huili Xing

  • Carrier statistics and quantum capacitance of graphene sheets and ribbons

    Tian Fang;Aniruddha Konar;Huili Xing;Debdeep Jena

  • High-performance, highly bendable MoS2 transistors with high-K dielectrics for flexible low-power systems

    Hsiao Yu Chang;Shixuan Yang;Jongho Lee;Li Tao

  • Anisotropic thermal conductivity in single crystal β-gallium oxide

    Zhi Guo;Amit Verma;Xufei Wu;Fangyuan Sun

  • Charge Scattering and Mobility in Atomically Thin Semiconductors

    Nan Ma;Debdeep Jena

  • Enhancement of carrier mobility in semiconductor nanostructures by dielectric engineering.

    Debdeep Jena;Aniruddha Konar

  • Intrinsic electron mobility limits in β-Ga2O3

    Nan Ma;Nicholas Tanen;Amit Verma;Zhi Guo

  • Esaki Diodes in van der Waals Heterojunctions with Broken-Gap Energy Band Alignment

    Rusen Yan;Rusen Yan;Sara Fathipour;Yimo Han;Bo Song;Bo Song

  • High-voltage field effect transistors with wide-bandgap β-Ga2O3 nanomembranes

    Wan Sik Hwang;Amit Verma;Hartwin Peelaers;Vladimir Protasenko

  • High-mobility window for two-dimensional electron gases at ultrathin AlN∕GaN heterojunctions

    Yu Cao;Debdeep Jena

  • Effect of high- κ gate dielectrics on charge transport in graphene-based field effect transistors

    Aniruddha Konar;Tian Fang;Debdeep Jena

  • Transistors with Chemically Synthesized Layered Semiconductor WS2 Exhibiting 105 Room Temperature Modulation and Ambipolar Behavior

    Wan Sik Hwang;Maja Remskar;Rusen Yan;Vladimir Protasenko

  • Enhancement-Mode Ga 2 O 3 Vertical Transistors With Breakdown Voltage >1 kV

    Zongyang Hu;Kazuki Nomoto;Wenshen Li;Nicholas Tanen

  • Mobility in semiconducting graphene nanoribbons: Phonon, impurity, and edge roughness scattering

    Tian Fang;Aniruddha Konar;Huili Xing;Debdeep Jena

Frequent Co-Authors

Huili Grace Xing
Huili Grace Xing Cornell University
Kazuki Nomoto
Kazuki Nomoto Cornell University
Patrick Fay
Patrick Fay University of Notre Dame
Yu Cao
Yu Cao Zhejiang University
Vladimir Protasenko
Vladimir Protasenko Cornell University
Gregory L. Snider
Gregory L. Snider University of Notre Dame
Sergei Rouvimov
Sergei Rouvimov University of Notre Dame
Alan Seabaugh
Alan Seabaugh University of Notre Dame
David A. Muller
David A. Muller Cornell University
Umesh K. Mishra
Umesh K. Mishra University of California, Santa Barbara

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