D-Index & Metrics Best Publications

D-Index & Metrics D-index (Discipline H-index) only includes papers and citation values for an examined discipline in contrast to General H-index which accounts for publications across all disciplines.

Discipline name D-index D-index (Discipline H-index) only includes papers and citation values for an examined discipline in contrast to General H-index which accounts for publications across all disciplines. Citations Publications World Ranking National Ranking
Materials Science D-index 87 Citations 41,722 409 World Ranking 717 National Ranking 281

Research.com Recognitions

Awards & Achievements

2009 - IEEE Fellow For contributions to high-k gate dielectric materials for integrated circuits

1921 - Fellow of the Royal Society of Canada

Overview

What is he best known for?

The fields of study he is best known for:

  • Semiconductor
  • Oxygen
  • Hydrogen

Robert M. Wallace focuses on Nanotechnology, Optoelectronics, Graphene, Analytical chemistry and X-ray photoelectron spectroscopy. He regularly links together related areas like Chemical engineering in his Nanotechnology studies. He works mostly in the field of Optoelectronics, limiting it down to concerns involving Gate dielectric and, occasionally, Zirconium, Silicon, Equivalent oxide thickness, Hafnium and Permittivity.

His work in Graphene covers topics such as Chemical vapor deposition which are related to areas like Atomic layer epitaxy. His work deals with themes such as Fermi level, Gallium arsenide, Inorganic chemistry, Atomic layer deposition and Oxidation state, which intersect with X-ray photoelectron spectroscopy. His Dielectric study combines topics in areas such as Transistor and Engineering physics.

His most cited work include:

  • High-κ gate dielectrics: Current status and materials properties considerations (5207 citations)
  • Carbon-based Supercapacitors Produced by Activation of Graphene (4459 citations)
  • Effect of alendronate on risk of fracture in women with low bone density but without vertebral fractures results from the fracture intervention trial (1982 citations)

What are the main themes of his work throughout his whole career to date?

Robert M. Wallace mostly deals with Analytical chemistry, Optoelectronics, X-ray photoelectron spectroscopy, Atomic layer deposition and Dielectric. His research in Analytical chemistry focuses on subjects like Silicon, which are connected to Hydrogen and Integrated circuit. His Optoelectronics research incorporates themes from Field-effect transistor, Transistor and Nanotechnology.

His X-ray photoelectron spectroscopy research is multidisciplinary, relying on both Inorganic chemistry, Oxide, Substrate and Semiconductor. His Atomic layer deposition research includes themes of In situ, Chemical vapor deposition, Nucleation, Passivation and Chemical engineering. His biological study spans a wide range of topics, including Gate dielectric and Capacitor.

He most often published in these fields:

  • Analytical chemistry (31.44%)
  • Optoelectronics (30.53%)
  • X-ray photoelectron spectroscopy (25.41%)

What were the highlights of his more recent work (between 2015-2021)?

  • Optoelectronics (30.53%)
  • X-ray photoelectron spectroscopy (25.41%)
  • Analytical chemistry (31.44%)

In recent papers he was focusing on the following fields of study:

His primary areas of study are Optoelectronics, X-ray photoelectron spectroscopy, Analytical chemistry, Nanotechnology and Transistor. His Optoelectronics research includes themes of Field-effect transistor and Contact resistance. The X-ray photoelectron spectroscopy study combines topics in areas such as Oxide, Chemical vapor deposition, Topological insulator, Passivation and Semiconductor.

His studies deal with areas such as Layer, Thin film, Atomic layer deposition, Low-energy electron diffraction and Scanning tunneling microscope as well as Analytical chemistry. His research in Nanotechnology is mostly focused on Graphene. His work on High-κ dielectric as part of general Dielectric study is frequently connected to Bilayer, therefore bridging the gap between diverse disciplines of science and establishing a new relationship between them.

Between 2015 and 2021, his most popular works were:

  • Two-dimensional gallium nitride realized via graphene encapsulation (322 citations)
  • Covalent Nitrogen Doping and Compressive Strain in MoS2 by Remote N2 Plasma Exposure. (170 citations)
  • Recombination Kinetics and Effects of Superacid Treatment in Sulfur- and Selenium-Based Transition Metal Dichalcogenides. (137 citations)

In his most recent research, the most cited papers focused on:

  • Semiconductor
  • Hydrogen
  • Oxygen

His primary scientific interests are in Optoelectronics, X-ray photoelectron spectroscopy, Nanotechnology, Analytical chemistry and Monolayer. His research investigates the link between Optoelectronics and topics such as Field-effect transistor that cross with problems in Field effect and Oxide. His research integrates issues of Inorganic chemistry, Scanning tunneling microscope and Covalent bond in his study of X-ray photoelectron spectroscopy.

His Nanotechnology study frequently links to other fields, such as Raman spectroscopy. His Analytical chemistry study incorporates themes from Layer, Metal and Low-energy electron diffraction. His Graphene research is multidisciplinary, incorporating elements of Band gap and Nitride.

This overview was generated by a machine learning system which analysed the scientist’s body of work. If you have any feedback, you can contact us here.

Best Publications

High-κ gate dielectrics: Current status and materials properties considerations

G. D. Wilk;R. M. Wallace;J. M. Anthony.
Journal of Applied Physics (2001)

7145 Citations

Carbon-based Supercapacitors Produced by Activation of Graphene

Yanwu Zhu;Shanthi Murali;Meryl D. Stoller;K. J. Ganesh.
Science (2011)

5176 Citations

Hafnium and zirconium silicates for advanced gate dielectrics

G. D. Wilk;R. M. Wallace;J. M. Anthony.
Journal of Applied Physics (2000)

1304 Citations

The effect of chemical residues on the physical and electrical properties of chemical vapor deposited graphene transferred to SiO2

A. Pirkle;J. Chan;A. Venugopal;D. Hinojos.
Applied Physics Letters (2011)

1025 Citations

Defect-Dominated Doping and Contact Resistance in MoS2

Stephen McDonnell;Rafik Addou;Creighton Buie;Robert M. Wallace.
ACS Nano (2014)

725 Citations

Near-unity photoluminescence quantum yield in MoS2

Matin Amani;Der-Hsien Lien;Daisuke Kiriya;James Bullock.
Science (2015)

706 Citations

ELECTRICAL PROPERTIES OF HAFNIUM SILICATE GATE DIELECTRICS DEPOSITED DIRECTLY ON SILICON

G. D. Wilk;R. M. Wallace.
Applied Physics Letters (1999)

695 Citations

The Role of Oxygen during Thermal Reduction of Graphene Oxide Studied by Infrared Absorption Spectroscopy

Muge Acik;Geunsik Lee;Cecilia Mattevi;Adam Pirkle.
Journal of Physical Chemistry C (2011)

639 Citations

The Unusual Mechanism of Partial Fermi Level Pinning at Metal–MoS2 Interfaces

Cheng Gong;Luigi Colombo;Robert M. Wallace;Kyeongjae Cho.
Nano Letters (2014)

618 Citations

Band alignment of two-dimensional transition metal dichalcogenides: Application in tunnel field effect transistors

Cheng Gong;Hengji Zhang;Weihua Wang;Luigi Colombo.
Applied Physics Letters (2013)

570 Citations

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