2026 Robert M. Wallace: Materials Science Researcher – H-Index, Publications & Awards

Discipline name	D-Index	World Ranking	Current World Ranking	National Ranking	Current National Ranking	Publications	Citations
Materials Science	99	1075	1028	353	327	537	55099

Research.com Recognitions

2009 - IEEE Fellow For contributions to high-k gate dielectric materials for integrated circuits
2007 - Fellow of the AVS
1921 - Fellow of the Royal Society of Canada

Overview

Robert M. Wallace is affiliated with The University of Texas at Dallas in the United States. Their research spans multiple fields, primarily within materials science and engineering, with a focus on materials chemistry and electrical and electronic engineering. Their work is strongly connected to the study and application of 2D materials, semiconductor materials, and interfaces.

The scientist's publication record includes contributions to several notable venues. Frequent publication outlets include:

ACS Applied Materials & Interfaces
ACS Nano
Applied Physics Letters
Advanced Materials Interfaces
Journal of Vacuum Science & Technology B Nanotechnology and Microelectronics Materials Processing Measurement and Phenomena

Their major research topics cover:

2D Materials and Applications
Semiconductor materials and devices
MXene and MAX Phase Materials
Graphene research and applications
Chalcogenide Semiconductor Thin Films
Semiconductor materials and interfaces
Electronic and Structural Properties of Oxides

Recent papers by Robert M. Wallace include:

"Passivation of III-V surfaces with crystalline oxidation," 2021, Applied Physics Reviews
"Understanding and optimization of graphene gas sensors," 2021, Applied Physics Letters
"Interface Chemistry and Band Alignment Study of Ni and Ag Contacts on MoS₂," 2021, ACS Applied Materials & Interfaces
"In situ exfoliated 2D molybdenum disulfide analyzed by XPS," 2020, Surface Science Spectra
"Atomic Layer Deposition of Layered Boron Nitride for Large-Area 2D Electronics," 2020, ACS Applied Materials & Interfaces

Frequent coauthors in Wallace's research include:

Xinglu Wang
Seong Yeoul Kim
Rafik Addou
Chadwin D. Young
Kyeongjae Cho

Wallace's work intersects with areas of atomic and molecular physics, optics, and environmental sustainability, reflecting a multidisciplinary approach in addressing challenges related to advanced materials. Their contributions to the study of high-k gate dielectric materials for integrated circuits were recognized in 2009 with an IEEE Fellow award.

They are also a Fellow of the Royal Society of Canada, an honor that marks their standing in the scientific community. Their research output comprises numerous publications contributing to the understanding and development of electronic, optical, and magnetic material properties relevant to semiconductor and 2D material technologies.

Best Publications

High-κ gate dielectrics: Current status and materials properties considerations

G. D. Wilk;R. M. Wallace;J. M. Anthony

7851
Citations
Carbon-based Supercapacitors Produced by Activation of Graphene

Yanwu Zhu;Shanthi Murali;Meryl D. Stoller;K. J. Ganesh

6780
Citations
Hafnium and zirconium silicates for advanced gate dielectrics

G. D. Wilk;R. M. Wallace;J. M. Anthony

1380
Citations
Near-unity photoluminescence quantum yield in MoS2

Matin Amani;Der-Hsien Lien;Daisuke Kiriya;James Bullock

1255
Citations
The effect of chemical residues on the physical and electrical properties of chemical vapor deposited graphene transferred to SiO2

A. Pirkle;J. Chan;A. Venugopal;D. Hinojos

1160
Citations
The Role of Oxygen during Thermal Reduction of Graphene Oxide Studied by Infrared Absorption Spectroscopy

Muge Acik;Geunsik Lee;Cecilia Mattevi;Adam Pirkle

1025
Citations
Zirconium and/or hafnium silicon-oxynitride gate dielectric

Robert M. Wallace;Richard A. Stoltz;Glen D. Wilk

1018
Citations
Defect-Dominated Doping and Contact Resistance in MoS2

Stephen McDonnell;Rafik Addou;Creighton Buie;Robert M. Wallace

908
Citations
Band alignment of two-dimensional transition metal dichalcogenides: Application in tunnel field effect transistors

Cheng Gong;Hengji Zhang;Weihua Wang;Luigi Colombo

895
Citations
The Unusual Mechanism of Partial Fermi Level Pinning at Metal–MoS2 Interfaces

Cheng Gong;Luigi Colombo;Robert M. Wallace;Kyeongjae Cho

839
Citations
High-K materials and metal gates for CMOS applications

John Robertson;Robert M. Wallace

819
Citations
Two-dimensional gallium nitride realized via graphene encapsulation

Zakaria Y. Al Balushi;Ke Wang;Ram Krishna Ghosh;Rafael A. Vilá

793
Citations
ELECTRICAL PROPERTIES OF HAFNIUM SILICATE GATE DIELECTRICS DEPOSITED DIRECTLY ON SILICON

G. D. Wilk;R. M. Wallace

700
Citations
MoS2 P-type Transistors and Diodes Enabled by High Work Function MoOx Contacts

Steven Chuang;Corsin Battaglia;Angelica Azcatl;Stephen McDonnell

624
Citations
Hole Selective MoOx Contact for Silicon Solar Cells

Corsin Battaglia;Xingtian Yin;Xingtian Yin;Xingtian Yin;Maxwell Zheng;Maxwell Zheng;Ian D. Sharp

608
Citations
GaAs interfacial self-cleaning by atomic layer deposition

Christopher L Hinkle;A. M. Sonnet;E. M. Vogel;Stephen J Mcdonnell

489
Citations
Atomically thin resonant tunnel diodes built from synthetic van der Waals heterostructures

Yu Chuan Lin;Ram Krishna Ghosh;Rafik Addou;Ning Lu

470
Citations
First-principles study of metal–graphene interfaces

Cheng Gong;Geunsik Lee;Bin Shan;Eric M. Vogel

466
Citations
Highly Scalable, Atomically Thin WSe2 Grown via Metal–Organic Chemical Vapor Deposition

Sarah M. Eichfeld;Lorraine Hossain;Yu Chuan Lin;Aleksander F. Piasecki

465
Citations
Nitrogen doping of graphene and its effect on quantum capacitance, and a new insight on the enhanced capacitance of N-doped carbon

Li Li Zhang;Xin Zhao;Xin Zhao;Hengxing Ji;Meryl D. Stoller

464
Citations
Stable zirconium silicate gate dielectrics deposited directly on silicon

G. D. Wilk;R. M. Wallace

461
Citations