World's Best Scientists 2026 revealed!

D-Index & Metrics

Materials Science

D-Index
99
Citations
55099
World Ranking
1075
National Ranking
352

Robert M. Wallace publication distribution in Materials Science in 2026

The chart shows the distribution of publications by all Research.com ranked scientists in the field of Materials Science in 2026. The highlighted bar marks where Robert M. Wallace sits on this spectrum.

50–69 publications: 28 scientists 70–89 publications: 152 scientists 90–109 publications: 356 scientists 110–129 publications: 487 scientists 130–149 publications: 723 scientists 150–169 publications: 835 scientists 170–189 publications: 850 scientists 190–209 publications: 891 scientists 210–229 publications: 862 scientists 230–249 publications: 766 scientists 250–269 publications: 726 scientists 270–289 publications: 665 scientists 290–309 publications: 593 scientists 310–329 publications: 537 scientists 330–349 publications: 477 scientists 350–369 publications: 440 scientists 370–389 publications: 356 scientists 390–409 publications: 321 scientists 410–429 publications: 256 scientists 430–449 publications: 246 scientists 450–469 publications: 216 scientists 470–489 publications: 212 scientists 490–509 publications: 174 scientists 510–529 publications: 194 scientists 530–549 publications: 162 scientists 550–569 publications: 131 scientists 570–589 publications: 111 scientists 590–609 publications: 103 scientists 610–629 publications: 99 scientists 630–649 publications: 77 scientists 650–669 publications: 92 scientists 670–689 publications: 56 scientists 690–709 publications: 53 scientists 710–729 publications: 53 scientists 730–749 publications: 38 scientists 750–769 publications: 52 scientists 770–789 publications: 43 scientists 790–809 publications: 38 scientists 810–829 publications: 34 scientists 830–849 publications: 25 scientists 850–869 publications: 18 scientists 870–889 publications: 20 scientists 890–909 publications: 24 scientists 910–929 publications: 27 scientists 930–949 publications: 20 scientists 950–969 publications: 17 scientists 970–989 publications: 10 scientists 990–1,009 publications: 16 scientists 1,010–1,029 publications: 13 scientists 1,030–1,049 publications: 12 scientists 1,050–1,069 publications: 9 scientists 1,070–1,089 publications: 8 scientists 1,090–1,109 publications: 7 scientists 1,110–1,129 publications: 9 scientists 1,130–1,149 publications: 2 scientists 1,150–1,162 publications: 5 scientists 1,163+ publications: 100 scientists
50 publications 1,163+

This scientist: 537 publications — 89th percentile

89% of scientists in this discipline score the same or lower.

The last bar groups every scientist with 1,163 publications or more.

Robert M. Wallace D-index placement in Materials Science in 2026

The chart shows the D-index (discipline H-index) distribution of Materials Science scientists ranked by Research.com in 2026. The highlighted bar marks where Robert M. Wallace sits on this spectrum.

40–41 D-Index: 211 scientists 42–43 D-Index: 450 scientists 44–45 D-Index: 612 scientists 46–47 D-Index: 612 scientists 48–49 D-Index: 598 scientists 50–51 D-Index: 657 scientists 52–53 D-Index: 667 scientists 54–55 D-Index: 621 scientists 56–57 D-Index: 597 scientists 58–59 D-Index: 610 scientists 60–61 D-Index: 587 scientists 62–63 D-Index: 606 scientists 64–65 D-Index: 533 scientists 66–67 D-Index: 490 scientists 68–69 D-Index: 469 scientists 70–71 D-Index: 378 scientists 72–73 D-Index: 421 scientists 74–75 D-Index: 359 scientists 76–77 D-Index: 323 scientists 78–79 D-Index: 299 scientists 80–81 D-Index: 230 scientists 82–83 D-Index: 210 scientists 84–85 D-Index: 195 scientists 86–87 D-Index: 203 scientists 88–89 D-Index: 175 scientists 90–91 D-Index: 175 scientists 92–93 D-Index: 142 scientists 94–95 D-Index: 121 scientists 96–97 D-Index: 117 scientists 98–99 D-Index: 107 scientists 100–101 D-Index: 88 scientists 102–103 D-Index: 85 scientists 104–105 D-Index: 68 scientists 106–107 D-Index: 62 scientists 108–109 D-Index: 57 scientists 110–111 D-Index: 45 scientists 112–113 D-Index: 49 scientists 114–115 D-Index: 50 scientists 116–117 D-Index: 34 scientists 118–119 D-Index: 38 scientists 120–121 D-Index: 37 scientists 122–123 D-Index: 29 scientists 124–125 D-Index: 28 scientists 126–127 D-Index: 24 scientists 128–129 D-Index: 33 scientists 130–131 D-Index: 28 scientists 132–133 D-Index: 21 scientists 134–135 D-Index: 20 scientists 136–137 D-Index: 23 scientists 138–139 D-Index: 17 scientists 140–141 D-Index: 12 scientists 142–143 D-Index: 17 scientists 144–145 D-Index: 21 scientists 146–147 D-Index: 13 scientists 148–149 D-Index: 11 scientists 150–151 D-Index: 14 scientists 152–153 D-Index: 13 scientists 154–155 D-Index: 9 scientists 156–157 D-Index: 10 scientists 158–159 D-Index: 7 scientists 160–161 D-Index: 4 scientists 162–163 D-Index: 4 scientists 164 D-Index: 3 scientists 165+ D-Index: 98 scientists
40 D-Index 165+

This scientist: 99 D-Index — 92nd percentile

92% of scientists in this discipline score the same or lower.

The last bar groups every scientist with 165 D-Index or more.

Research.com Recognitions

  • 2009 - IEEE Fellow For contributions to high-k gate dielectric materials for integrated circuits
  • 2007 - Fellow of the AVS
  • 2007 - Fellow of the AVS
  • 1921 - Fellow of the Royal Society of Canada

Overview

Robert M. Wallace is affiliated with The University of Texas at Dallas in the United States. Their research spans multiple fields, primarily within materials science and engineering, with a focus on materials chemistry and electrical and electronic engineering. Their work is strongly connected to the study and application of 2D materials, semiconductor materials, and interfaces.

The scientist's publication record includes contributions to several notable venues. Frequent publication outlets include:

  • ACS Applied Materials & Interfaces
  • ACS Nano
  • Applied Physics Letters
  • Advanced Materials Interfaces
  • Journal of Vacuum Science & Technology B Nanotechnology and Microelectronics Materials Processing Measurement and Phenomena

Their major research topics cover:

  • 2D Materials and Applications
  • Semiconductor materials and devices
  • MXene and MAX Phase Materials
  • Graphene research and applications
  • Chalcogenide Semiconductor Thin Films
  • Semiconductor materials and interfaces
  • Electronic and Structural Properties of Oxides

Recent papers by Robert M. Wallace include:

  • "Passivation of III-V surfaces with crystalline oxidation," 2021, Applied Physics Reviews
  • "Understanding and optimization of graphene gas sensors," 2021, Applied Physics Letters
  • "Interface Chemistry and Band Alignment Study of Ni and Ag Contacts on MoS2," 2021, ACS Applied Materials & Interfaces
  • "In situ exfoliated 2D molybdenum disulfide analyzed by XPS," 2020, Surface Science Spectra
  • "Atomic Layer Deposition of Layered Boron Nitride for Large-Area 2D Electronics," 2020, ACS Applied Materials & Interfaces

Frequent coauthors in Wallace's research include:

  • Xinglu Wang
  • Seong Yeoul Kim
  • Rafik Addou
  • Chadwin D. Young
  • Kyeongjae Cho

Wallace's work intersects with areas of atomic and molecular physics, optics, and environmental sustainability, reflecting a multidisciplinary approach in addressing challenges related to advanced materials. Their contributions to the study of high-k gate dielectric materials for integrated circuits were recognized in 2009 with an IEEE Fellow award.

They are also a Fellow of the Royal Society of Canada, an honor that marks their standing in the scientific community. Their research output comprises numerous publications contributing to the understanding and development of electronic, optical, and magnetic material properties relevant to semiconductor and 2D material technologies.

Best Publications

  • High-κ gate dielectrics: Current status and materials properties considerations

    G. D. Wilk;R. M. Wallace;J. M. Anthony

  • Carbon-based Supercapacitors Produced by Activation of Graphene

    Yanwu Zhu;Shanthi Murali;Meryl D. Stoller;K. J. Ganesh

  • Hafnium and zirconium silicates for advanced gate dielectrics

    G. D. Wilk;R. M. Wallace;J. M. Anthony

  • Near-unity photoluminescence quantum yield in MoS2

    Matin Amani;Der-Hsien Lien;Daisuke Kiriya;James Bullock

  • The effect of chemical residues on the physical and electrical properties of chemical vapor deposited graphene transferred to SiO2

    A. Pirkle;J. Chan;A. Venugopal;D. Hinojos

  • The Role of Oxygen during Thermal Reduction of Graphene Oxide Studied by Infrared Absorption Spectroscopy

    Muge Acik;Geunsik Lee;Cecilia Mattevi;Adam Pirkle

  • Zirconium and/or hafnium silicon-oxynitride gate dielectric

    Robert M. Wallace;Richard A. Stoltz;Glen D. Wilk

  • Defect-Dominated Doping and Contact Resistance in MoS2

    Stephen McDonnell;Rafik Addou;Creighton Buie;Robert M. Wallace

  • Band alignment of two-dimensional transition metal dichalcogenides: Application in tunnel field effect transistors

    Cheng Gong;Hengji Zhang;Weihua Wang;Luigi Colombo

  • The Unusual Mechanism of Partial Fermi Level Pinning at Metal–MoS2 Interfaces

    Cheng Gong;Luigi Colombo;Robert M. Wallace;Kyeongjae Cho

  • High-K materials and metal gates for CMOS applications

    John Robertson;Robert M. Wallace

  • Two-dimensional gallium nitride realized via graphene encapsulation

    Zakaria Y. Al Balushi;Ke Wang;Ram Krishna Ghosh;Rafael A. Vilá

  • ELECTRICAL PROPERTIES OF HAFNIUM SILICATE GATE DIELECTRICS DEPOSITED DIRECTLY ON SILICON

    G. D. Wilk;R. M. Wallace

  • MoS2 P-type Transistors and Diodes Enabled by High Work Function MoOx Contacts

    Steven Chuang;Corsin Battaglia;Angelica Azcatl;Stephen McDonnell

  • Hole Selective MoOx Contact for Silicon Solar Cells

    Corsin Battaglia;Xingtian Yin;Xingtian Yin;Xingtian Yin;Maxwell Zheng;Maxwell Zheng;Ian D. Sharp

  • GaAs interfacial self-cleaning by atomic layer deposition

    Christopher L Hinkle;A. M. Sonnet;E. M. Vogel;Stephen J Mcdonnell

  • Atomically thin resonant tunnel diodes built from synthetic van der Waals heterostructures

    Yu Chuan Lin;Ram Krishna Ghosh;Rafik Addou;Ning Lu

  • First-principles study of metal–graphene interfaces

    Cheng Gong;Geunsik Lee;Bin Shan;Eric M. Vogel

  • Highly Scalable, Atomically Thin WSe2 Grown via Metal–Organic Chemical Vapor Deposition

    Sarah M. Eichfeld;Lorraine Hossain;Yu Chuan Lin;Aleksander F. Piasecki

  • Nitrogen doping of graphene and its effect on quantum capacitance, and a new insight on the enhanced capacitance of N-doped carbon

    Li Li Zhang;Xin Zhao;Xin Zhao;Hengxing Ji;Meryl D. Stoller

  • Stable zirconium silicate gate dielectrics deposited directly on silicon

    G. D. Wilk;R. M. Wallace

Frequent Co-Authors

Jiyoung Kim
Jiyoung Kim The University of Texas at Dallas
Kyeongjae Cho
Kyeongjae Cho The University of Texas at Dallas
Christopher L. Hinkle
Christopher L. Hinkle University of Notre Dame
Stephen McDonnell
Stephen McDonnell University of Virginia
Bruce E. Gnade
Bruce E. Gnade The University of Texas at Dallas
Rafik Addou
Rafik Addou The University of Texas at Dallas
Luigi Colombo
Luigi Colombo The University of Texas at Dallas
Manuel Quevedo-Lopez
Manuel Quevedo-Lopez The University of Texas at Dallas
Eric M. Vogel
Eric M. Vogel Georgia Institute of Technology
Yves J. Chabal
Yves J. Chabal The University of Texas at Dallas

If you think any of the details on this page are incorrect, let us know.

Report an issue

We appreciate your kind effort to assist us to improve this page, it would be helpful providing us with as much detail as possible in the text box below:

Best Scientists Citing Robert M. Wallace

Trending Scientists

Recently Published Articles