2009 - IEEE Fellow For contributions to high-k gate dielectric materials for integrated circuits
1921 - Fellow of the Royal Society of Canada
Robert M. Wallace focuses on Nanotechnology, Optoelectronics, Graphene, Analytical chemistry and X-ray photoelectron spectroscopy. He regularly links together related areas like Chemical engineering in his Nanotechnology studies. He works mostly in the field of Optoelectronics, limiting it down to concerns involving Gate dielectric and, occasionally, Zirconium, Silicon, Equivalent oxide thickness, Hafnium and Permittivity.
His work in Graphene covers topics such as Chemical vapor deposition which are related to areas like Atomic layer epitaxy. His work deals with themes such as Fermi level, Gallium arsenide, Inorganic chemistry, Atomic layer deposition and Oxidation state, which intersect with X-ray photoelectron spectroscopy. His Dielectric study combines topics in areas such as Transistor and Engineering physics.
Robert M. Wallace mostly deals with Analytical chemistry, Optoelectronics, X-ray photoelectron spectroscopy, Atomic layer deposition and Dielectric. His research in Analytical chemistry focuses on subjects like Silicon, which are connected to Hydrogen and Integrated circuit. His Optoelectronics research incorporates themes from Field-effect transistor, Transistor and Nanotechnology.
His X-ray photoelectron spectroscopy research is multidisciplinary, relying on both Inorganic chemistry, Oxide, Substrate and Semiconductor. His Atomic layer deposition research includes themes of In situ, Chemical vapor deposition, Nucleation, Passivation and Chemical engineering. His biological study spans a wide range of topics, including Gate dielectric and Capacitor.
His primary areas of study are Optoelectronics, X-ray photoelectron spectroscopy, Analytical chemistry, Nanotechnology and Transistor. His Optoelectronics research includes themes of Field-effect transistor and Contact resistance. The X-ray photoelectron spectroscopy study combines topics in areas such as Oxide, Chemical vapor deposition, Topological insulator, Passivation and Semiconductor.
His studies deal with areas such as Layer, Thin film, Atomic layer deposition, Low-energy electron diffraction and Scanning tunneling microscope as well as Analytical chemistry. His research in Nanotechnology is mostly focused on Graphene. His work on High-κ dielectric as part of general Dielectric study is frequently connected to Bilayer, therefore bridging the gap between diverse disciplines of science and establishing a new relationship between them.
His primary scientific interests are in Optoelectronics, X-ray photoelectron spectroscopy, Nanotechnology, Analytical chemistry and Monolayer. His research investigates the link between Optoelectronics and topics such as Field-effect transistor that cross with problems in Field effect and Oxide. His research integrates issues of Inorganic chemistry, Scanning tunneling microscope and Covalent bond in his study of X-ray photoelectron spectroscopy.
His Nanotechnology study frequently links to other fields, such as Raman spectroscopy. His Analytical chemistry study incorporates themes from Layer, Metal and Low-energy electron diffraction. His Graphene research is multidisciplinary, incorporating elements of Band gap and Nitride.
This overview was generated by a machine learning system which analysed the scientist’s body of work. If you have any feedback, you can contact us here.
High-κ gate dielectrics: Current status and materials properties considerations
G. D. Wilk;R. M. Wallace;J. M. Anthony.
Journal of Applied Physics (2001)
Carbon-based Supercapacitors Produced by Activation of Graphene
Yanwu Zhu;Shanthi Murali;Meryl D. Stoller;K. J. Ganesh.
Science (2011)
Hafnium and zirconium silicates for advanced gate dielectrics
G. D. Wilk;R. M. Wallace;J. M. Anthony.
Journal of Applied Physics (2000)
The effect of chemical residues on the physical and electrical properties of chemical vapor deposited graphene transferred to SiO2
A. Pirkle;J. Chan;A. Venugopal;D. Hinojos.
Applied Physics Letters (2011)
Defect-Dominated Doping and Contact Resistance in MoS2
Stephen McDonnell;Rafik Addou;Creighton Buie;Robert M. Wallace.
ACS Nano (2014)
Near-unity photoluminescence quantum yield in MoS2
Matin Amani;Der-Hsien Lien;Daisuke Kiriya;James Bullock.
Science (2015)
ELECTRICAL PROPERTIES OF HAFNIUM SILICATE GATE DIELECTRICS DEPOSITED DIRECTLY ON SILICON
G. D. Wilk;R. M. Wallace.
Applied Physics Letters (1999)
The Role of Oxygen during Thermal Reduction of Graphene Oxide Studied by Infrared Absorption Spectroscopy
Muge Acik;Geunsik Lee;Cecilia Mattevi;Adam Pirkle.
Journal of Physical Chemistry C (2011)
The Unusual Mechanism of Partial Fermi Level Pinning at Metal–MoS2 Interfaces
Cheng Gong;Luigi Colombo;Robert M. Wallace;Kyeongjae Cho.
Nano Letters (2014)
Band alignment of two-dimensional transition metal dichalcogenides: Application in tunnel field effect transistors
Cheng Gong;Hengji Zhang;Weihua Wang;Luigi Colombo.
Applied Physics Letters (2013)
If you think any of the details on this page are incorrect, let us know.
We appreciate your kind effort to assist us to improve this page, it would be helpful providing us with as much detail as possible in the text box below:
The University of Texas at Dallas
The University of Texas at Dallas
Southern Methodist University
The University of Texas at Dallas
The University of Texas at Dallas
Georgia Institute of Technology
The University of Texas at Dallas
Pennsylvania State University
The University of Texas at Dallas
Ulsan National Institute of Science and Technology
University of California, Santa Cruz
Boston University
University of Florida
University of Toronto
Chinese Academy of Sciences
Scripps Research Institute
Federal University of Toulouse Midi-Pyrénées
Max Planck Society
Instituto de Salud Carlos III
Nihon University
Semmelweis University
University of Pittsburgh
Johns Hopkins University School of Medicine
Northwestern University
Hokkaido University
University of Colorado Denver