Eric M. Vogel

Overview

Best Publications

• Large-Area Graphene Single Crystals Grown by Low-Pressure Chemical Vapor Deposition of Methane on Copper

  Xuesong Li;Carl W. Magnuson;Archana Venugopal;Rudolf M. Tromp

  1611
  Citations

• Graphene films with large domain size by a two-step chemical vapor deposition process.

  Xuesong Li;Carl W. Magnuson;Archana Venugopal;Jinho An

  1308
  Citations

• The effect of chemical residues on the physical and electrical properties of chemical vapor deposited graphene transferred to SiO2

  A. Pirkle;J. Chan;A. Venugopal;D. Hinojos

  1160
  Citations

• GaAs interfacial self-cleaning by atomic layer deposition

  Christopher L Hinkle;A. M. Sonnet;E. M. Vogel;Stephen J Mcdonnell

  489
  Citations

• First-principles study of metal–graphene interfaces

  Cheng Gong;Geunsik Lee;Bin Shan;Eric M. Vogel

  466
  Citations

• Contact resistance in few and multilayer graphene devices

  A. Venugopal;L. Colombo;E. M. Vogel

  355
  Citations

• Conformal Al2O3 dielectric layer deposited by atomic layer deposition for graphene-based nanoelectronics

  Bongki Lee;Seong-Yong Park;Hyun-Chul Kim;KyeongJae Cho

  347
  Citations

• Detection of Ga suboxides and their impact on III-V passivation and Fermi-level pinning

  C. L. Hinkle;M. Milojevic;Barry Brennan;A. M. Sonnet

  328
  Citations

• Reducing extrinsic performance-limiting factors in graphene grown by chemical vapor deposition.

  Jack Chan;Archana Venugopal;Adam Pirkle;Stephen McDonnell

  278
  Citations

• Technology and metrology of new electronic materials and devices.

  Eric M. Vogel;Eric M. Vogel

  257
  Citations

• Controlled Doping of Large‐Area Trilayer MoS2 with Molecular Reductants and Oxidants

  Alexey Tarasov;Siyuan Zhang;Meng-Yen Tsai;Philip M. Campbell

  239
  Citations

• Modeled tunnel currents for high dielectric constant dielectrics

  E.M. Vogel;K.Z. Ahmed;B. Hornung;W.K. Henson

  228
  Citations

• Estimating oxide thickness of tunnel oxides down to 1.4 nm using conventional capacitance-voltage measurements on MOS capacitors

  W.K. Henson;K.Z. Ahmed;E.M. Vogel;J.R. Hauser

  203
  Citations

• Half-cycle atomic layer deposition reaction studies of Al2O3 on In0.2Ga0.8As (100) surfaces

  M. Milojevic;F. S. Aguirre-Tostado;C. L. Hinkle;H. C. Kim

  202
  Citations

• Silicon nanowires as enhancement-mode Schottky barrier field-effect transistors

  Sang-Mo Koo;Monica D Edelstein;Qiliang Li;Curt A Richter

  191
  Citations

• Enhanced channel modulation in dual-gated silicon nanowire transistors.

  Sang-Mo Koo;Qiliang Li;Monica D. Edelstein;Curt A. Richter

  186
  Citations

• Hebbian Learning in Spiking Neural Networks With Nanocrystalline Silicon TFTs and Memristive Synapses

  K. D. Cantley;A. Subramaniam;H. J. Stiegler;R. A. Chapman

  186
  Citations

• Effective mobility of single-layer graphene transistors as a function of channel dimensions

  Archana Venugopal;Jack Chan;Xuesong Li;Carl W. Magnuson

  169
  Citations

• Flexible MoS2 Field-Effect Transistors for Gate-Tunable Piezoresistive Strain Sensors.

  Meng-Yen Tsai;Alexey Tarasov;Zohreh R. Hesabi;Hossein Taghinejad

  167
  Citations

• Interfacial chemistry of oxides on InxGa(1-x)As and implications for MOSFET applications

  C. L. Hinkle;E. M. Vogel;Peide D. Ye;R. M. Wallace

  164
  Citations