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D-Index & Metrics

Materials Science

D-Index
60
Citations
15739
World Ranking
6954
National Ranking
1750

Eric M. Vogel publication distribution in Materials Science in 2026

The chart shows the distribution of publications by all Research.com ranked scientists in the field of Materials Science in 2026. The highlighted bar marks where Eric M. Vogel sits on this spectrum.

50–69 publications: 28 scientists 70–89 publications: 152 scientists 90–109 publications: 356 scientists 110–129 publications: 487 scientists 130–149 publications: 723 scientists 150–169 publications: 835 scientists 170–189 publications: 850 scientists 190–209 publications: 891 scientists 210–229 publications: 862 scientists 230–249 publications: 766 scientists 250–269 publications: 726 scientists 270–289 publications: 665 scientists 290–309 publications: 593 scientists 310–329 publications: 537 scientists 330–349 publications: 477 scientists 350–369 publications: 440 scientists 370–389 publications: 356 scientists 390–409 publications: 321 scientists 410–429 publications: 256 scientists 430–449 publications: 246 scientists 450–469 publications: 216 scientists 470–489 publications: 212 scientists 490–509 publications: 174 scientists 510–529 publications: 194 scientists 530–549 publications: 162 scientists 550–569 publications: 131 scientists 570–589 publications: 111 scientists 590–609 publications: 103 scientists 610–629 publications: 99 scientists 630–649 publications: 77 scientists 650–669 publications: 92 scientists 670–689 publications: 56 scientists 690–709 publications: 53 scientists 710–729 publications: 53 scientists 730–749 publications: 38 scientists 750–769 publications: 52 scientists 770–789 publications: 43 scientists 790–809 publications: 38 scientists 810–829 publications: 34 scientists 830–849 publications: 25 scientists 850–869 publications: 18 scientists 870–889 publications: 20 scientists 890–909 publications: 24 scientists 910–929 publications: 27 scientists 930–949 publications: 20 scientists 950–969 publications: 17 scientists 970–989 publications: 10 scientists 990–1,009 publications: 16 scientists 1,010–1,029 publications: 13 scientists 1,030–1,049 publications: 12 scientists 1,050–1,069 publications: 9 scientists 1,070–1,089 publications: 8 scientists 1,090–1,109 publications: 7 scientists 1,110–1,129 publications: 9 scientists 1,130–1,149 publications: 2 scientists 1,150–1,162 publications: 5 scientists 1,163+ publications: 100 scientists
50 publications 1,163+

This scientist: 294 publications — 58th percentile

58% of scientists in this discipline score the same or lower.

The last bar groups every scientist with 1,163 publications or more.

Eric M. Vogel D-index placement in Materials Science in 2026

The chart shows the D-index (discipline H-index) distribution of Materials Science scientists ranked by Research.com in 2026. The highlighted bar marks where Eric M. Vogel sits on this spectrum.

40–41 D-Index: 211 scientists 42–43 D-Index: 450 scientists 44–45 D-Index: 612 scientists 46–47 D-Index: 612 scientists 48–49 D-Index: 598 scientists 50–51 D-Index: 657 scientists 52–53 D-Index: 667 scientists 54–55 D-Index: 621 scientists 56–57 D-Index: 597 scientists 58–59 D-Index: 610 scientists 60–61 D-Index: 587 scientists 62–63 D-Index: 606 scientists 64–65 D-Index: 533 scientists 66–67 D-Index: 490 scientists 68–69 D-Index: 469 scientists 70–71 D-Index: 378 scientists 72–73 D-Index: 421 scientists 74–75 D-Index: 359 scientists 76–77 D-Index: 323 scientists 78–79 D-Index: 299 scientists 80–81 D-Index: 230 scientists 82–83 D-Index: 210 scientists 84–85 D-Index: 195 scientists 86–87 D-Index: 203 scientists 88–89 D-Index: 175 scientists 90–91 D-Index: 175 scientists 92–93 D-Index: 142 scientists 94–95 D-Index: 121 scientists 96–97 D-Index: 117 scientists 98–99 D-Index: 107 scientists 100–101 D-Index: 88 scientists 102–103 D-Index: 85 scientists 104–105 D-Index: 68 scientists 106–107 D-Index: 62 scientists 108–109 D-Index: 57 scientists 110–111 D-Index: 45 scientists 112–113 D-Index: 49 scientists 114–115 D-Index: 50 scientists 116–117 D-Index: 34 scientists 118–119 D-Index: 38 scientists 120–121 D-Index: 37 scientists 122–123 D-Index: 29 scientists 124–125 D-Index: 28 scientists 126–127 D-Index: 24 scientists 128–129 D-Index: 33 scientists 130–131 D-Index: 28 scientists 132–133 D-Index: 21 scientists 134–135 D-Index: 20 scientists 136–137 D-Index: 23 scientists 138–139 D-Index: 17 scientists 140–141 D-Index: 12 scientists 142–143 D-Index: 17 scientists 144–145 D-Index: 21 scientists 146–147 D-Index: 13 scientists 148–149 D-Index: 11 scientists 150–151 D-Index: 14 scientists 152–153 D-Index: 13 scientists 154–155 D-Index: 9 scientists 156–157 D-Index: 10 scientists 158–159 D-Index: 7 scientists 160–161 D-Index: 4 scientists 162–163 D-Index: 4 scientists 164 D-Index: 3 scientists 165+ D-Index: 98 scientists
40 D-Index 165+

This scientist: 60 D-Index — 46th percentile

46% of scientists in this discipline score the same or lower.

The last bar groups every scientist with 165 D-Index or more.

Overview

Eric M. Vogel is affiliated with the Georgia Institute of Technology in the United States. Their research spans the fields of Engineering and Materials Science, with a significant focus on Electrical and Electronic Engineering and Materials Chemistry. Additional subfields in their work include Cellular and Molecular Neuroscience, Biomedical Engineering, and Bioengineering.

Their research topics encompass a variety of specialized areas, including:

  • Ferroelectric and Negative Capacitance Devices
  • Advanced Memory and Neural Computing
  • Neuroscience and Neural Engineering
  • Semiconductor Materials and Devices
  • MXene and MAX Phase Materials
  • Molecular Junctions and Nanostructures
  • Analytical Chemistry and Sensors

Frequent co-authors collaborating with Vogel include Fabia F. Athena, Matthew P. West, Decarle S. Jin, Samuel Graham, and Eleanor L. Brightbill.

Their recent publications illustrate contributions to diverse areas within materials and electronic device research. Selected papers include:

  • "Synthetic Engineering of Morphology and Electronic Band Gap in Lateral Heterostructures of Monolayer Transition Metal Dichalcogenides," 2020, ACS Nano
  • "Towards a better understanding of the forming and resistive switching behavior of Ti-doped HfOx RRAM," 2022, Journal of Materials Chemistry C
  • "Graphene synthesized by chemical vapor deposition as a hydrogen isotope permeation barrier," 2021, Carbon
  • "Asymmetric Resistive Switching of Bilayer HfOx/AlOy and AlOy/HfOx Memristors: The Oxide Layer Characteristics and Performance Optimization for Digital Set and Analog Reset Switching," 2023, ACS Applied Electronic Materials
  • "Impact of titanium doping and pulsing conditions on the analog temporal response of hafnium oxide based memristor synapses," 2022, Journal of Applied Physics

Vogel frequently publishes in a selection of journals, with multiple contributions to:

  • Journal of Applied Physics
  • ECS Meeting Abstracts
  • Applied Physics Letters
  • Journal of Vacuum Science & Technology A Vacuum Surfaces and Films
  • ACS Applied Electronic Materials

In addition to journal articles, Vogel authored a book published by Apress eBooks titled Beginning Entity Framework Core 5 in 2021.

Best Publications

  • Large-Area Graphene Single Crystals Grown by Low-Pressure Chemical Vapor Deposition of Methane on Copper

    Xuesong Li;Carl W. Magnuson;Archana Venugopal;Rudolf M. Tromp

  • Graphene films with large domain size by a two-step chemical vapor deposition process.

    Xuesong Li;Carl W. Magnuson;Archana Venugopal;Jinho An

  • The effect of chemical residues on the physical and electrical properties of chemical vapor deposited graphene transferred to SiO2

    A. Pirkle;J. Chan;A. Venugopal;D. Hinojos

  • GaAs interfacial self-cleaning by atomic layer deposition

    Christopher L Hinkle;A. M. Sonnet;E. M. Vogel;Stephen J Mcdonnell

  • First-principles study of metal–graphene interfaces

    Cheng Gong;Geunsik Lee;Bin Shan;Eric M. Vogel

  • Contact resistance in few and multilayer graphene devices

    A. Venugopal;L. Colombo;E. M. Vogel

  • Conformal Al2O3 dielectric layer deposited by atomic layer deposition for graphene-based nanoelectronics

    Bongki Lee;Seong-Yong Park;Hyun-Chul Kim;KyeongJae Cho

  • Detection of Ga suboxides and their impact on III-V passivation and Fermi-level pinning

    C. L. Hinkle;M. Milojevic;Barry Brennan;A. M. Sonnet

  • Reducing extrinsic performance-limiting factors in graphene grown by chemical vapor deposition.

    Jack Chan;Archana Venugopal;Adam Pirkle;Stephen McDonnell

  • Technology and metrology of new electronic materials and devices.

    Eric M. Vogel;Eric M. Vogel

  • Controlled Doping of Large‐Area Trilayer MoS2 with Molecular Reductants and Oxidants

    Alexey Tarasov;Siyuan Zhang;Meng-Yen Tsai;Philip M. Campbell

  • Modeled tunnel currents for high dielectric constant dielectrics

    E.M. Vogel;K.Z. Ahmed;B. Hornung;W.K. Henson

  • Estimating oxide thickness of tunnel oxides down to 1.4 nm using conventional capacitance-voltage measurements on MOS capacitors

    W.K. Henson;K.Z. Ahmed;E.M. Vogel;J.R. Hauser

  • Half-cycle atomic layer deposition reaction studies of Al2O3 on In0.2Ga0.8As (100) surfaces

    M. Milojevic;F. S. Aguirre-Tostado;C. L. Hinkle;H. C. Kim

  • Silicon nanowires as enhancement-mode Schottky barrier field-effect transistors

    Sang-Mo Koo;Monica D Edelstein;Qiliang Li;Curt A Richter

  • Enhanced channel modulation in dual-gated silicon nanowire transistors.

    Sang-Mo Koo;Qiliang Li;Monica D. Edelstein;Curt A. Richter

  • Hebbian Learning in Spiking Neural Networks With Nanocrystalline Silicon TFTs and Memristive Synapses

    K. D. Cantley;A. Subramaniam;H. J. Stiegler;R. A. Chapman

  • Effective mobility of single-layer graphene transistors as a function of channel dimensions

    Archana Venugopal;Jack Chan;Xuesong Li;Carl W. Magnuson

  • Flexible MoS2 Field-Effect Transistors for Gate-Tunable Piezoresistive Strain Sensors.

    Meng-Yen Tsai;Alexey Tarasov;Zohreh R. Hesabi;Hossein Taghinejad

  • Interfacial chemistry of oxides on InxGa(1-x)As and implications for MOSFET applications

    C. L. Hinkle;E. M. Vogel;Peide D. Ye;R. M. Wallace

Frequent Co-Authors

Christopher L. Hinkle
Christopher L. Hinkle University of Notre Dame
Robert M. Wallace
Robert M. Wallace The University of Texas at Dallas
John S. Suehle
John S. Suehle National Institute of Standards and Technology
Curt A. Richter
Curt A. Richter National Institute of Standards and Technology
Luigi Colombo
Luigi Colombo The University of Texas at Dallas
Jiyoung Kim
Jiyoung Kim The University of Texas at Dallas
Gennadi Bersuker
Gennadi Bersuker The Aerospace Corporation
Yves J. Chabal
Yves J. Chabal The University of Texas at Dallas
Veena Misra
Veena Misra North Carolina State University
Jay Hauser
Jay Hauser University of California, Los Angeles

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