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Paul K. Hurley

D-Index & Metrics

Discipline name D-Index World Ranking Current World Ranking National Ranking Current National Ranking Publications Citations
Electronics and Electrical Engineering 33 5979 5741 27 27 327 5510

Paul K. Hurley publications per year

The chart shows the history of publications by Paul K. Hurley between 1982 and 2026, highlighting the no. of papers published in each year and offering an overview of the publication velocity of this scholar. Paul K. Hurley published across 45 years, from 1982 to 2026, averaging 8.6 papers a year. Output peaked at 28 publications in 2017. 17 of the 389 publications appeared in the last two years.

No. of publications
5 10 15 20 25
Bar chart. Horizontal axis: year, 1982 to 2026. Vertical axis: number of publications, 0 to 28. Peak 28 publications in 2017. 1982: 1 publication 1983: 0 publications 1984: 0 publications 1985: 0 publications 1986: 0 publications 1987: 0 publications 1988: 0 publications 1989: 1 publication 1990: 2 publications 1991: 2 publications 1992: 1 publication 1993: 2 publications 1994: 5 publications 1995: 3 publications 1996: 4 publications 1997: 3 publications 1998: 3 publications 1999: 4 publications 2000: 3 publications 2001: 6 publications 2002: 5 publications 2003: 8 publications 2004: 4 publications 2005: 8 publications 2006: 9 publications 2007: 13 publications 2008: 16 publications 2009: 26 publications 2010: 27 publications 2011: 22 publications 2012: 13 publications 2013: 22 publications 2014: 15 publications 2015: 10 publications 2016: 14 publications 2017: 28 publications 2018: 23 publications 2019: 14 publications 2020: 14 publications 2021: 17 publications 2022: 4 publications 2023: 11 publications 2024: 9 publications 2025: 15 publications 2026: 2 publications
1982 2026

389 publications in total across all disciplines

View publications per year as a table
Paul K. Hurley: publications per year, 1982 to 2026
Year Publications
1982 1
1983 0
1984 0
1985 0
1986 0
1987 0
1988 0
1989 1
1990 2
1991 2
1992 1
1993 2
1994 5
1995 3
1996 4
1997 3
1998 3
1999 4
2000 3
2001 6
2002 5
2003 8
2004 4
2005 8
2006 9
2007 13
2008 16
2009 26
2010 27
2011 22
2012 13
2013 22
2014 15
2015 10
2016 14
2017 28
2018 23
2019 14
2020 14
2021 17
2022 4
2023 11
2024 9
2025 15
2026 2
Total 389
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Paul K. Hurley publication distribution in Electronics and Electrical Engineering in 2026

The chart shows the distribution of publications by all Research.com ranked scientists in the field of Electronics and Electrical Engineering in 2026. The highlighted bar marks where Paul K. Hurley sits on this spectrum.

No. of scientists
100 200 300 400
Bar chart with 53 bars. Horizontal axis: publications, 34–53 to 1,065+. Vertical axis: number of scientists, 0 to 445. Most scientists, 445, have 174–193 publications. The last bar groups every scientist with 1,065 publications or more. The highlighted bar, 314–333 publications, is where this scientist sits. 34–53 publications: 24 scientists 54–73 publications: 52 scientists 74–93 publications: 114 scientists 94–113 publications: 203 scientists 114–133 publications: 269 scientists 134–153 publications: 355 scientists 154–173 publications: 403 scientists 174–193 publications: 445 scientists 194–213 publications: 430 scientists 214–233 publications: 431 scientists 234–253 publications: 399 scientists 254–273 publications: 366 scientists 274–293 publications: 335 scientists 294–313 publications: 300 scientists 314–333 publications: 276 scientists 334–353 publications: 250 scientists 354–373 publications: 214 scientists 374–393 publications: 187 scientists 394–413 publications: 152 scientists 414–433 publications: 169 scientists 434–453 publications: 147 scientists 454–473 publications: 111 scientists 474–493 publications: 117 scientists 494–513 publications: 103 scientists 514–533 publications: 99 scientists 534–553 publications: 92 scientists 554–573 publications: 75 scientists 574–593 publications: 58 scientists 594–613 publications: 69 scientists 614–633 publications: 50 scientists 634–653 publications: 62 scientists 654–673 publications: 54 scientists 674–693 publications: 44 scientists 694–713 publications: 37 scientists 714–733 publications: 28 scientists 734–753 publications: 26 scientists 754–773 publications: 26 scientists 774–793 publications: 19 scientists 794–813 publications: 23 scientists 814–833 publications: 20 scientists 834–853 publications: 16 scientists 854–873 publications: 20 scientists 874–893 publications: 11 scientists 894–913 publications: 11 scientists 914–933 publications: 16 scientists 934–953 publications: 13 scientists 954–973 publications: 10 scientists 974–993 publications: 11 scientists 994–1,013 publications: 9 scientists 1,014–1,033 publications: 9 scientists 1,034–1,053 publications: 10 scientists 1,054–1,064 publications: 6 scientists 1,065+ publications: 99 scientists
34–53 publications 1,065+

This scientist: 327 publications — 63rd percentile

63% of scientists in this discipline score the same or lower.

The last bar groups every scientist with 1,065 publications or more.

View publications distribution as a table
Number of Electronics and Electrical Engineering scientists by publication count, Research.com 2026 ranking edition. Based on 6,875 ranked scientists.
Publications Scientists This scientist
34–53 24
54–73 52
74–93 114
94–113 203
114–133 269
134–153 355
154–173 403
174–193 445
194–213 430
214–233 431
234–253 399
254–273 366
274–293 335
294–313 300
314–333 276 327
334–353 250
354–373 214
374–393 187
394–413 152
414–433 169
434–453 147
454–473 111
474–493 117
494–513 103
514–533 99
534–553 92
554–573 75
574–593 58
594–613 69
614–633 50
634–653 62
654–673 54
674–693 44
694–713 37
714–733 28
734–753 26
754–773 26
774–793 19
794–813 23
814–833 20
834–853 16
854–873 20
874–893 11
894–913 11
914–933 16
934–953 13
954–973 10
974–993 11
994–1,013 9
1,014–1,033 9
1,034–1,053 10
1,054–1,064 6
1,065+ 99
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Paul K. Hurley D-index placement in Electronics and Electrical Engineering in 2026

The chart shows the D-index (discipline H-index) distribution of Electronics and Electrical Engineering scientists ranked by Research.com in 2026. The highlighted bar marks where Paul K. Hurley sits on this spectrum.

No. of scientists
50 100 150 200 250
Bar chart with 82 bars. Horizontal axis: D-Index, 30 to 111+. Vertical axis: number of scientists, 0 to 263. Most scientists, 263, have 32 D-Index. The last bar groups every scientist with 111 D-Index or more. The highlighted bar, 33 D-Index, is where this scientist sits. 30 D-Index: 178 scientists 31 D-Index: 257 scientists 32 D-Index: 263 scientists 33 D-Index: 262 scientists 34 D-Index: 244 scientists 35 D-Index: 236 scientists 36 D-Index: 211 scientists 37 D-Index: 220 scientists 38 D-Index: 214 scientists 39 D-Index: 214 scientists 40 D-Index: 205 scientists 41 D-Index: 187 scientists 42 D-Index: 194 scientists 43 D-Index: 201 scientists 44 D-Index: 155 scientists 45 D-Index: 189 scientists 46 D-Index: 148 scientists 47 D-Index: 160 scientists 48 D-Index: 134 scientists 49 D-Index: 130 scientists 50 D-Index: 141 scientists 51 D-Index: 156 scientists 52 D-Index: 108 scientists 53 D-Index: 130 scientists 54 D-Index: 112 scientists 55 D-Index: 97 scientists 56 D-Index: 111 scientists 57 D-Index: 102 scientists 58 D-Index: 108 scientists 59 D-Index: 120 scientists 60 D-Index: 103 scientists 61 D-Index: 93 scientists 62 D-Index: 92 scientists 63 D-Index: 74 scientists 64 D-Index: 77 scientists 65 D-Index: 73 scientists 66 D-Index: 64 scientists 67 D-Index: 69 scientists 68 D-Index: 60 scientists 69 D-Index: 39 scientists 70 D-Index: 57 scientists 71 D-Index: 59 scientists 72 D-Index: 46 scientists 73 D-Index: 49 scientists 74 D-Index: 38 scientists 75 D-Index: 35 scientists 76 D-Index: 32 scientists 77 D-Index: 35 scientists 78 D-Index: 31 scientists 79 D-Index: 22 scientists 80 D-Index: 34 scientists 81 D-Index: 31 scientists 82 D-Index: 34 scientists 83 D-Index: 23 scientists 84 D-Index: 18 scientists 85 D-Index: 30 scientists 86 D-Index: 19 scientists 87 D-Index: 19 scientists 88 D-Index: 20 scientists 89 D-Index: 8 scientists 90 D-Index: 17 scientists 91 D-Index: 7 scientists 92 D-Index: 14 scientists 93 D-Index: 9 scientists 94 D-Index: 15 scientists 95 D-Index: 10 scientists 96 D-Index: 12 scientists 97 D-Index: 10 scientists 98 D-Index: 10 scientists 99 D-Index: 12 scientists 100 D-Index: 16 scientists 101 D-Index: 5 scientists 102 D-Index: 7 scientists 103 D-Index: 7 scientists 104 D-Index: 8 scientists 105 D-Index: 9 scientists 106 D-Index: 13 scientists 107 D-Index: 4 scientists 108 D-Index: 5 scientists 109 D-Index: 10 scientists 110 D-Index: 8 scientists 111+ D-Index: 96 scientists
30 D-Index 111+

This scientist: 33 D-Index — 14th percentile

14% of scientists in this discipline score the same or lower.

The last bar groups every scientist with 111 D-Index or more.

View D-Index distribution as a table
Number of Electronics and Electrical Engineering scientists by D-index, Research.com 2026 ranking edition. Based on 6,875 ranked scientists.
D-Index Scientists This scientist
30 178
31 257
32 263
33 262 33
34 244
35 236
36 211
37 220
38 214
39 214
40 205
41 187
42 194
43 201
44 155
45 189
46 148
47 160
48 134
49 130
50 141
51 156
52 108
53 130
54 112
55 97
56 111
57 102
58 108
59 120
60 103
61 93
62 92
63 74
64 77
65 73
66 64
67 69
68 60
69 39
70 57
71 59
72 46
73 49
74 38
75 35
76 32
77 35
78 31
79 22
80 34
81 31
82 34
83 23
84 18
85 30
86 19
87 19
88 20
89 8
90 17
91 7
92 14
93 9
94 15
95 10
96 12
97 10
98 10
99 12
100 16
101 5
102 7
103 7
104 8
105 9
106 13
107 4
108 5
109 10
110 8
111+ 96
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Overview

Paul K. Hurley is affiliated with the Tyndall National Institute in Ireland. Their primary research spans the fields of Engineering and Materials Science with specific concentration in Materials Chemistry and Electrical and Electronic Engineering. The scope of their work also covers areas in Atomic and Molecular Physics, and Optics, as well as Biomedical Engineering and Electronic, Optical and Magnetic Materials.

The scientist's research focuses on several key topics including 2D Materials and Applications, Semiconductor materials and devices, and Advanced Memory and Neural Computing. Additional interests include MXene and MAX Phase Materials, Graphene research and applications, Semiconductor materials and interfaces, and Chalcogenide Semiconductor Thin Films.

Paul K. Hurley has contributed to multiple research papers with significant citations across various specialized journals. Recent publications include:

  • Coexistence of Negative and Positive Photoconductivity in Few-Layer PtSe 2 Field-Effect Transistors (2021) in Advanced Functional Materials
  • Insights into Multilevel Resistive Switching in Monolayer MoS2 (2020) in ACS Applied Materials & Interfaces
  • Imaging and identification of point defects in PtTe2 (2021) in npj 2D Materials and Applications
  • Emulating synaptic response in n- and p-channel MoS2 transistors by utilizing charge trapping dynamics (2020) in Scientific Reports
  • Femtosecond Laser-Induced Crystallization of Amorphous Silicon Thin Films under a Thin Molybdenum Layer (2021) in ACS Applied Materials & Interfaces

Their frequent coauthors include Farzan Gity, Lida Ansari, Scott Monaghan, K. Cherkaoui, and Niall McEvoy, reflecting ongoing collaborations within their research network.

In terms of publication venues, Paul K. Hurley most commonly publishes in ECS Meeting Abstracts, Solid-State Electronics, Scientific Reports, ACS Applied Nano Materials, and Advanced Electronic Materials.

Best Publications

  • Design principles for maximizing photovoltage in metal-oxide-protected water-splitting photoanodes

    Andrew G. Scheuermann;John P. Lawrence;Kyle W. Kemp;T. Ito;T. Ito

  • Nanocrystalline TiO2 films studied by optical, XRD and FTIR spectroscopy

    Jun-Ying Zhang;Ian W. Boyd;B.J. O'Sullivan;P.K. Hurley

  • Air sensitivity of MoS2, MoSe2, MoTe2, HfS2, and HfSe2

    Gioele Mirabelli;Conor McGeough;Michael Schmidt;Eoin K. McCarthy

  • Wide Spectral Photoresponse of Layered Platinum Diselenide-Based Photodiodes

    Chanyoung Yim;Niall McEvoy;Sarah Riazimehr;Sarah Riazimehr;Daniel S. Schneider

  • Navigation aids in the search for future high-k dielectrics: Physical and electrical trends

    Olof Engström;Bahman Raeissi;S. Hall;Octavian Buiu

  • Determination of electron effective mass and electron affinity in HfO2 using MOS and MOSFET structures

    S. Monaghan;P.K. Hurley;K. Cherkaoui;M.A. Negara

  • Temperature and frequency dependent electrical characterization of HfO2/InxGa1−xAs interfaces using capacitance-voltage and conductance methods

    Éamon O'Connor;Scott Monaghan;Rathnait D. Long;Aileen O'Mahony

  • A systematic study of (NH4)2S passivation (22%, 10%, 5%, or 1%) on the interface properties of the Al2O3/In0.53Ga0.47As/InP system for n-type and p-type In0.53Ga0.47As epitaxial layers

    Éamon O'Connor;B. Brennan;Vladimir Djara;Karim Cherkaoui

  • Quantum confinement-induced semimetal-to-semiconductor evolution in large-area ultra-thin PtSe2 films grown at 400 °C

    Lida Ansari;Scott Monaghan;Niall McEvoy;Cormac Ó Coileáin

  • Evaluation of border traps and interface traps in HfO2/MoS2 gate stacks by capacitance - voltage analysis

    Peng Zhao;Ava Khosravi;Angelica Azcatl;Pavel Bolshakov

  • Si(100)–SiO2 interface properties following rapid thermal processing

    B. J. O'Sullivan;Paul K. Hurley;C. Leveugle;J. H. Das

  • Coexistence of negative and positive photoconductivity in few-layer PtSe2 field-effect transistors

    Alessandro Grillo;Enver Faella;Aniello Pelella;Filippo Giubileo

  • In situ H 2 S passivation of In 0.53 Ga 0.47 As/InP metal-oxide-semiconductor capacitors with atomic-layer deposited HfO 2 gate dielectric

    Éamon O'Connor;Rathnait D. Long;Karim Cherkaoui;Kevin K. Thomas

  • Investigation of TiO2-doped HfO2 thin films deposited by photo-CVD

    Q. Fang;J.-Y. Zhang;J.-Y. Zhang;Z.M. Wang;J.X. Wu

  • Impact of Forming Gas Annealing on the Performance of Surface-Channel $\hbox{In}_{0.53}\hbox{Ga}_{0.47}\hbox{As}$ MOSFETs With an ALD $\hbox{Al}_{2}\hbox{O}_{3}$ Gate Dielectric

    V. Djara;K. Cherkaoui;M. Schmidt;S. Monaghan

  • Improvement in top-gate MoS2 transistor performance due to high quality backside Al2O3 layer

    Pavel Bolshakov;Peng Zhao;Angelica Azcatl;Paul K. Hurley

  • Interface of ultrathin HfO2 films deposited by UV-photo-CVD

    Q. Fang;J.-Y. Zhang;Z. Wang;M. Modreanu

  • An investigation of capacitance-voltage hysteresis in metal/high-k/In0.53Ga0.47As metal-oxide-semiconductor capacitors

    Jun Lin;Yuri Y. Gomeniuk;Scott Monaghan;Ian M. Povey

  • Interface Defects in HfO2, LaSiOx, and Gd2O3 High-k/Metal–Gate Structures on Silicon

    P. K. Hurley;K. Cherkaoui;E. O'Connor;Max C. Lemme

  • Electrical, structural, and chemical properties of HfO2 films formed by electron beam evaporation

    Karim Cherkaoui;Scott Monaghan;Muhammad A. Negara;Mircea Modreanu

  • Structural and electrical analysis of the atomic layer deposition of HfO2/n-In0.53Ga0.47As capacitors with and without an Al2O3 interface control layer

    Aileen O'Mahony;Scott Monaghan;G. Provenzano;Ian M. Povey

  • Dual-gate MoS2 transistors with sub-10 nm top-gate high-k dielectrics

    Pavel Bolshakov;Ava Khosravi;Peng Zhao;Paul K. Hurley

  • Coexistence of Negative and Positive Photoconductivity in Few-Layer PtSe2 Field-Effect Transistors

    Alessandro Grillo;Enver Faella;Aniello Pelella;Filippo Giubileo

Frequent Co-Authors

Robert M. Wallace
Robert M. Wallace The University of Texas at Dallas
Martyn E. Pemble
Martyn E. Pemble Tyndall National Institute
Ian W. Boyd
Ian W. Boyd Brunel University London
Enrique Miranda
Enrique Miranda Autonomous University of Barcelona
Max C. Lemme
Max C. Lemme RWTH Aachen University
Christopher L. Hinkle
Christopher L. Hinkle University of Notre Dame
Niall McEvoy
Niall McEvoy Trinity College Dublin
Georg S. Duesberg
Georg S. Duesberg Bundeswehr University Munich
Paul C. McIntyre
Paul C. McIntyre Stanford University
Andre Stesmans
Andre Stesmans KU Leuven

External Links

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Best Scientists Citing Paul K. Hurley

Robert M. Wallace

Robert M. Wallace

The University of Texas at Dallas

Publications: 46

Paul C. McIntyre

Paul C. McIntyre

Stanford University

Publications: 35

Andre Stesmans

Andre Stesmans

KU Leuven

Publications: 28

Georg S. Duesberg

Georg S. Duesberg

Bundeswehr University Munich

Publications: 27

Max C. Lemme

Max C. Lemme

RWTH Aachen University

Publications: 21

Edward Yi Chang

Edward Yi Chang

National Yang Ming Chiao Tung University

Publications: 19

Minghwei Hong

Minghwei Hong

National Taiwan University

Publications: 19

J. Kwo

J. Kwo

National Tsing Hua University

Publications: 18

Christopher L. Hinkle

Christopher L. Hinkle

University of Notre Dame

Publications: 18

Kyeongjae Cho

Kyeongjae Cho

The University of Texas at Dallas

Publications: 17

Niall McEvoy

Niall McEvoy

Trinity College Dublin

Publications: 17

Hyoungsub Kim

Hyoungsub Kim

Sungkyunkwan University

Publications: 17

Marco Fanciulli

Marco Fanciulli

University of Milano-Bicocca

Publications: 16

Jiyoung Kim

Jiyoung Kim

The University of Texas at Dallas

Publications: 16

Mitsuru Takenaka

Mitsuru Takenaka

University of Tokyo

Publications: 15

Shinichi Takagi

Shinichi Takagi

University of Tokyo

Publications: 15

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