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D-Index & Metrics

Electronics and Electrical Engineering

D-Index
33
Citations
5510
World Ranking
5979
National Ranking
27

Overview

Paul K. Hurley is affiliated with the Tyndall National Institute in Ireland. Their primary research spans the fields of Engineering and Materials Science with specific concentration in Materials Chemistry and Electrical and Electronic Engineering. The scope of their work also covers areas in Atomic and Molecular Physics, and Optics, as well as Biomedical Engineering and Electronic, Optical and Magnetic Materials.

The scientist's research focuses on several key topics including 2D Materials and Applications, Semiconductor materials and devices, and Advanced Memory and Neural Computing. Additional interests include MXene and MAX Phase Materials, Graphene research and applications, Semiconductor materials and interfaces, and Chalcogenide Semiconductor Thin Films.

Paul K. Hurley has contributed to multiple research papers with significant citations across various specialized journals. Recent publications include:

  • Coexistence of Negative and Positive Photoconductivity in Few-Layer PtSe 2 Field-Effect Transistors (2021) in Advanced Functional Materials
  • Insights into Multilevel Resistive Switching in Monolayer MoS2 (2020) in ACS Applied Materials & Interfaces
  • Imaging and identification of point defects in PtTe2 (2021) in npj 2D Materials and Applications
  • Emulating synaptic response in n- and p-channel MoS2 transistors by utilizing charge trapping dynamics (2020) in Scientific Reports
  • Femtosecond Laser-Induced Crystallization of Amorphous Silicon Thin Films under a Thin Molybdenum Layer (2021) in ACS Applied Materials & Interfaces

Their frequent coauthors include Farzan Gity, Lida Ansari, Scott Monaghan, K. Cherkaoui, and Niall McEvoy, reflecting ongoing collaborations within their research network.

In terms of publication venues, Paul K. Hurley most commonly publishes in ECS Meeting Abstracts, Solid-State Electronics, Scientific Reports, ACS Applied Nano Materials, and Advanced Electronic Materials.

Best Publications

  • Design principles for maximizing photovoltage in metal-oxide-protected water-splitting photoanodes

    Andrew G. Scheuermann;John P. Lawrence;Kyle W. Kemp;T. Ito;T. Ito

  • Nanocrystalline TiO2 films studied by optical, XRD and FTIR spectroscopy

    Jun-Ying Zhang;Ian W. Boyd;B.J. O'Sullivan;P.K. Hurley

  • Air sensitivity of MoS2, MoSe2, MoTe2, HfS2, and HfSe2

    Gioele Mirabelli;Conor McGeough;Michael Schmidt;Eoin K. McCarthy

  • Wide Spectral Photoresponse of Layered Platinum Diselenide-Based Photodiodes

    Chanyoung Yim;Niall McEvoy;Sarah Riazimehr;Sarah Riazimehr;Daniel S. Schneider

  • Navigation aids in the search for future high-k dielectrics: Physical and electrical trends

    Olof Engström;Bahman Raeissi;S. Hall;Octavian Buiu

  • Determination of electron effective mass and electron affinity in HfO2 using MOS and MOSFET structures

    S. Monaghan;P.K. Hurley;K. Cherkaoui;M.A. Negara

  • Temperature and frequency dependent electrical characterization of HfO2/InxGa1−xAs interfaces using capacitance-voltage and conductance methods

    Éamon O'Connor;Scott Monaghan;Rathnait D. Long;Aileen O'Mahony

  • A systematic study of (NH4)2S passivation (22%, 10%, 5%, or 1%) on the interface properties of the Al2O3/In0.53Ga0.47As/InP system for n-type and p-type In0.53Ga0.47As epitaxial layers

    Éamon O'Connor;B. Brennan;Vladimir Djara;Karim Cherkaoui

  • Quantum confinement-induced semimetal-to-semiconductor evolution in large-area ultra-thin PtSe2 films grown at 400 °C

    Lida Ansari;Scott Monaghan;Niall McEvoy;Cormac Ó Coileáin

  • Evaluation of border traps and interface traps in HfO2/MoS2 gate stacks by capacitance - voltage analysis

    Peng Zhao;Ava Khosravi;Angelica Azcatl;Pavel Bolshakov

  • Si(100)–SiO2 interface properties following rapid thermal processing

    B. J. O'Sullivan;Paul K. Hurley;C. Leveugle;J. H. Das

  • Coexistence of negative and positive photoconductivity in few-layer PtSe2 field-effect transistors

    Alessandro Grillo;Enver Faella;Aniello Pelella;Filippo Giubileo

  • In situ H 2 S passivation of In 0.53 Ga 0.47 As/InP metal-oxide-semiconductor capacitors with atomic-layer deposited HfO 2 gate dielectric

    Éamon O'Connor;Rathnait D. Long;Karim Cherkaoui;Kevin K. Thomas

  • Investigation of TiO2-doped HfO2 thin films deposited by photo-CVD

    Q. Fang;J.-Y. Zhang;J.-Y. Zhang;Z.M. Wang;J.X. Wu

  • Impact of Forming Gas Annealing on the Performance of Surface-Channel $\hbox{In}_{0.53}\hbox{Ga}_{0.47}\hbox{As}$ MOSFETs With an ALD $\hbox{Al}_{2}\hbox{O}_{3}$ Gate Dielectric

    V. Djara;K. Cherkaoui;M. Schmidt;S. Monaghan

  • Improvement in top-gate MoS2 transistor performance due to high quality backside Al2O3 layer

    Pavel Bolshakov;Peng Zhao;Angelica Azcatl;Paul K. Hurley

  • Interface of ultrathin HfO2 films deposited by UV-photo-CVD

    Q. Fang;J.-Y. Zhang;Z. Wang;M. Modreanu

  • An investigation of capacitance-voltage hysteresis in metal/high-k/In0.53Ga0.47As metal-oxide-semiconductor capacitors

    Jun Lin;Yuri Y. Gomeniuk;Scott Monaghan;Ian M. Povey

  • Interface Defects in HfO2, LaSiOx, and Gd2O3 High-k/Metal–Gate Structures on Silicon

    P. K. Hurley;K. Cherkaoui;E. O'Connor;Max C. Lemme

  • Electrical, structural, and chemical properties of HfO2 films formed by electron beam evaporation

    Karim Cherkaoui;Scott Monaghan;Muhammad A. Negara;Mircea Modreanu

  • Structural and electrical analysis of the atomic layer deposition of HfO2/n-In0.53Ga0.47As capacitors with and without an Al2O3 interface control layer

    Aileen O'Mahony;Scott Monaghan;G. Provenzano;Ian M. Povey

  • Dual-gate MoS2 transistors with sub-10 nm top-gate high-k dielectrics

    Pavel Bolshakov;Ava Khosravi;Peng Zhao;Paul K. Hurley

  • Coexistence of Negative and Positive Photoconductivity in Few-Layer PtSe2 Field-Effect Transistors

    Alessandro Grillo;Enver Faella;Aniello Pelella;Filippo Giubileo

Frequent Co-Authors

Robert M. Wallace
Robert M. Wallace The University of Texas at Dallas
Martyn E. Pemble
Martyn E. Pemble Tyndall National Institute
Ian W. Boyd
Ian W. Boyd Brunel University London
Enrique Miranda
Enrique Miranda Autonomous University of Barcelona
Max C. Lemme
Max C. Lemme RWTH Aachen University
Christopher L. Hinkle
Christopher L. Hinkle University of Notre Dame
Niall McEvoy
Niall McEvoy Trinity College Dublin
Georg S. Duesberg
Georg S. Duesberg Bundeswehr University Munich
Paul C. McIntyre
Paul C. McIntyre Stanford University

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