World's Best Scientists 2026 revealed!

D-Index & Metrics

Materials Science

D-Index
48
Citations
12016
World Ranking
10724
National Ranking
478

Engineering and Technology

D-Index
48
Citations
11943
World Ranking
4481
National Ranking
108

Hyoungsub Kim publication distribution in Engineering and Technology in 2026

The chart shows the distribution of publications by all Research.com ranked scientists in the field of Engineering and Technology in 2026. The highlighted bar marks where Hyoungsub Kim sits on this spectrum.

38–47 publications: 20 scientists 48–57 publications: 35 scientists 58–67 publications: 96 scientists 68–77 publications: 135 scientists 78–87 publications: 190 scientists 88–97 publications: 259 scientists 98–107 publications: 283 scientists 108–117 publications: 369 scientists 118–127 publications: 341 scientists 128–137 publications: 386 scientists 138–147 publications: 372 scientists 148–157 publications: 457 scientists 158–167 publications: 415 scientists 168–177 publications: 407 scientists 178–187 publications: 421 scientists 188–197 publications: 378 scientists 198–207 publications: 403 scientists 208–217 publications: 317 scientists 218–227 publications: 346 scientists 228–237 publications: 321 scientists 238–247 publications: 260 scientists 248–257 publications: 280 scientists 258–267 publications: 240 scientists 268–277 publications: 214 scientists 278–287 publications: 242 scientists 288–297 publications: 203 scientists 298–307 publications: 166 scientists 308–317 publications: 154 scientists 318–327 publications: 175 scientists 328–337 publications: 159 scientists 338–347 publications: 99 scientists 348–357 publications: 131 scientists 358–367 publications: 106 scientists 368–377 publications: 118 scientists 378–387 publications: 97 scientists 388–397 publications: 108 scientists 398–407 publications: 82 scientists 408–417 publications: 71 scientists 418–427 publications: 64 scientists 428–437 publications: 55 scientists 438–447 publications: 54 scientists 448–457 publications: 60 scientists 458–467 publications: 47 scientists 468–477 publications: 40 scientists 478–487 publications: 30 scientists 488–497 publications: 29 scientists 498–507 publications: 38 scientists 508–517 publications: 40 scientists 518–527 publications: 32 scientists 528–537 publications: 23 scientists 538–547 publications: 28 scientists 548–557 publications: 23 scientists 558–567 publications: 19 scientists 568–577 publications: 16 scientists 578–587 publications: 17 scientists 588–597 publications: 18 scientists 598–607 publications: 22 scientists 608–617 publications: 15 scientists 618–627 publications: 9 scientists 628–637 publications: 11 scientists 638–647 publications: 21 scientists 648–657 publications: 12 scientists 658–667 publications: 9 scientists 668–677 publications: 11 scientists 678–687 publications: 9 scientists 688–697 publications: 6 scientists 698–707 publications: 14 scientists 708–717 publications: 7 scientists 718–727 publications: 8 scientists 728–737 publications: 10 scientists 738–747 publications: 9 scientists 748–757 publications: 5 scientists 758–767 publications: 5 scientists 768–777 publications: 11 scientists 778–787 publications: 7 scientists 788–797 publications: 2 scientists 798–803 publications: 4 scientists 804+ publications: 100 scientists
38 publications 804+

This scientist: 286 publications — 73rd percentile

73% of scientists in this discipline score the same or lower.

The last bar groups every scientist with 804 publications or more.

Hyoungsub Kim D-index placement in Engineering and Technology in 2026

The chart shows the D-index (discipline H-index) distribution of Engineering and Technology scientists ranked by Research.com in 2026. The highlighted bar marks where Hyoungsub Kim sits on this spectrum.

30 D-Index: 59 scientists 31 D-Index: 114 scientists 32 D-Index: 129 scientists 33 D-Index: 189 scientists 34 D-Index: 200 scientists 35 D-Index: 262 scientists 36 D-Index: 311 scientists 37 D-Index: 312 scientists 38 D-Index: 350 scientists 39 D-Index: 385 scientists 40 D-Index: 348 scientists 41 D-Index: 362 scientists 42 D-Index: 426 scientists 43 D-Index: 380 scientists 44 D-Index: 310 scientists 45 D-Index: 341 scientists 46 D-Index: 301 scientists 47 D-Index: 306 scientists 48 D-Index: 271 scientists 49 D-Index: 246 scientists 50 D-Index: 210 scientists 51 D-Index: 253 scientists 52 D-Index: 213 scientists 53 D-Index: 221 scientists 54 D-Index: 195 scientists 55 D-Index: 186 scientists 56 D-Index: 170 scientists 57 D-Index: 167 scientists 58 D-Index: 166 scientists 59 D-Index: 144 scientists 60 D-Index: 152 scientists 61 D-Index: 141 scientists 62 D-Index: 138 scientists 63 D-Index: 131 scientists 64 D-Index: 118 scientists 65 D-Index: 114 scientists 66 D-Index: 119 scientists 67 D-Index: 95 scientists 68 D-Index: 87 scientists 69 D-Index: 77 scientists 70 D-Index: 89 scientists 71 D-Index: 69 scientists 72 D-Index: 54 scientists 73 D-Index: 46 scientists 74 D-Index: 55 scientists 75 D-Index: 54 scientists 76 D-Index: 49 scientists 77 D-Index: 53 scientists 78 D-Index: 46 scientists 79 D-Index: 28 scientists 80 D-Index: 39 scientists 81 D-Index: 36 scientists 82 D-Index: 24 scientists 83 D-Index: 26 scientists 84 D-Index: 36 scientists 85 D-Index: 18 scientists 86 D-Index: 25 scientists 87 D-Index: 19 scientists 88 D-Index: 26 scientists 89 D-Index: 27 scientists 90 D-Index: 23 scientists 91 D-Index: 15 scientists 92 D-Index: 12 scientists 93 D-Index: 9 scientists 94 D-Index: 15 scientists 95 D-Index: 10 scientists 96 D-Index: 13 scientists 97 D-Index: 13 scientists 98 D-Index: 9 scientists 99 D-Index: 7 scientists 100 D-Index: 7 scientists 101 D-Index: 8 scientists 102 D-Index: 7 scientists 103 D-Index: 7 scientists 104 D-Index: 9 scientists 105 D-Index: 6 scientists 106 D-Index: 9 scientists 107+ D-Index: 99 scientists
30 D-Index 107+

This scientist: 48 D-Index — 55th percentile

55% of scientists in this discipline score the same or lower.

The last bar groups every scientist with 107 D-Index or more.

Overview

Hyoungsub Kim is affiliated with Sungkyunkwan University in South Korea. Their research primarily spans the fields of Engineering and Materials Science, with a focus on Electrical and Electronic Engineering and Materials Chemistry as the main subfields. Additional subfields include Atomic and Molecular Physics, and Optics, Biomedical Engineering, and Electronic, Optical and Magnetic Materials.

The scientist's work covers several specialized topics, including:

  • Semiconductor materials and devices
  • Ferroelectric and Negative Capacitance Devices
  • MXene and MAX Phase Materials
  • 2D Materials and Applications
  • Advancements in Semiconductor Devices and Circuit Design
  • Semiconductor materials and interfaces
  • Advanced Memory and Neural Computing

Hyoungsub Kim has contributed to multiple publication venues throughout their career. The most frequent journals and their publication counts are:

  • physica status solidi (RRL) - Rapid Research Letters: 5 publications
  • ACS Applied Materials & Interfaces: 3 publications
  • Applied Surface Science: 3 publications
  • Journal of Alloys and Compounds: 2 publications
  • Journal of Physics D Applied Physics: 2 publications

Selected recent papers produced by Hyoungsub Kim include:

  • "Resistive switching and synaptic behaviors of an HfO2/Al2O3 stack on ITO for neuromorphic systems," 2020, Journal of Alloys and Compounds
  • "Unveiling the Origin of Robust Ferroelectricity in Sub-2 nm Hafnium Zirconium Oxide Films," 2021, ACS Applied Materials & Interfaces
  • "Solution printable multifunctional polymer-based composites for smart electromagnetic interference shielding with tunable frequency and on-off selectivities," 2023, Advanced Composites and Hybrid Materials
  • "Traps at the hBN/WSe2 interface and their impact on polarity transition in WSe2," 2021, 2D Materials
  • "Ferroelectric switching in GeTe through rotation of lone-pair electrons by Electric field-driven phase transition," 2021, Applied Materials Today

The scientist has collaborated frequently with several coauthors, including:

  • Deokjoon Eom
  • Woohui Lee
  • Hyangsook Lee
  • Eunha Lee
  • Joohee Oh

Best Publications

  • High-mobility and low-power thin-film transistors based on multilayer MoS2 crystals

    Sunkook Kim;Sunkook Kim;Aniruddha Konar;Wan-Sik Hwang;Jong Hak Lee

  • High-κ dielectrics for advanced carbon- nanotube transistors and logic gates

    Ali Javey;Hyoungsub Kim;Markus Brink;Qian Wang

  • Germanium nanowire field-effect transistors with SiO2 and high-κ HfO2 gate dielectrics

    Dunwei Wang;Qian Wang;Ali Javey;Ryan Tu

  • Effects of hydroxyl groups in polymeric dielectrics on organic transistor performance

    Sangyun Lee;Bonwon Koo;Joonghan Shin;Eunkyong Lee

  • Effects of crystallization on the electrical properties of ultrathin HfO2 dielectrics grown by atomic layer deposition

    Hyoungsub Kim;Paul C. McIntyre;Krishna C. Saraswat

  • A sub-400/spl deg/C germanium MOSFET technology with high-/spl kappa/ dielectric and metal gate

    Chi On Chui;Hyoungsub Kim;D. Chi;B.B. Triplett

  • Engineering chemically abrupt high-k metal oxide∕silicon interfaces using an oxygen-gettering metal overlayer

    Hyoungsub Kim;Paul C. McIntyre;Chi On Chui;Krishna C. Saraswat

  • Carrier-Type Modulation and Mobility Improvement of Thin MoTe2.

    Deshun Qu;Xiaochi Liu;Ming Huang;Changmin Lee

  • Improved growth behavior of atomic-layer-deposited high-k dielectrics on multilayer MoS2 by oxygen plasma pretreatment.

    Jaehyun Yang;Sunkook Kim;Woong Choi;Sang Han Park

  • Investigation of Self-Assembled Monolayer Resists for Hafnium Dioxide Atomic Layer Deposition

    Rong Chen;Hyoungsub Kim;Paul C. Mcintyre;Stacey F. Bent

  • Atomic layer deposition of ZrO2 on W for metal-insulator-metal capacitor application

    Sang-Yun Lee;Hyoungsub Kim;Paul C. McIntyre;Krishna C. Saraswat

  • Interfacial characteristics of HfO2 grown on nitrided Ge (100) substrates by atomic-layer deposition

    Hyoungsub Kim;Paul C. McIntyre;Chi On Chui;Krishna C. Saraswat

  • Achieving area-selective atomic layer deposition on patterned substrates by selective surface modification

    Rong Chen;Hyoungsub Kim;Paul C. McIntyre;David W. Porter

  • Self-assembled monolayer resist for atomic layer deposition of HfO2 and ZrO2 high-κ gate dielectrics

    Rong Chen;Hyoungsub Kim;Paul C. McIntyre;Stacey F. Bent

  • Atomic layer deposition of high-/spl kappa/ dielectric for germanium MOS applications - substrate

    Chi On Chui;H. Kim;P.C. McIntyre;K.C. Saraswat

  • Assessment of silicon MOS and carbon nanotube FET performance limits using a general theory of ballistic transistors

    Jing Guo;S. Datta;M. Lundstrom;M. Brink

  • Local epitaxial growth of ZrO2 on Ge (100) substrates by atomic layer epitaxy

    Hyoungsub Kim;Chi On Chui;Krishna C. Saraswat;Paul C. McIntyre

  • Spinodal decomposition in amorphous metal–silicate thin films: Phase diagram analysis and interface effects on kinetics

    H. Kim;P. C. McIntyre

  • Ligne de bit enterrée et cellule de porte cylindrique et procédé de fabrication de ces éléments.

    Hyoung-Sub Kim

  • Structural, electronic, and dielectric properties of ultrathin zirconia films on silicon

    S. Sayan;N. V. Nguyen;J. Ehrstein;Thomas Emge

Frequent Co-Authors

Paul C. McIntyre
Paul C. McIntyre Stanford University
Krishna C. Saraswat
Krishna C. Saraswat Stanford University
Chi On Chui
Chi On Chui University of California, Los Angeles
Junsin Yi
Junsin Yi Sungkyunkwan University
Cheol-Woong Yang
Cheol-Woong Yang Sungkyunkwan University
Hyung Koun Cho
Hyung Koun Cho Sungkyunkwan University
Jiyoung Kim
Jiyoung Kim The University of Texas at Dallas
Jack C. Lee
Jack C. Lee The University of Texas at Austin
Rong Chen
Rong Chen Icahn School of Medicine at Mount Sinai
Stacey F. Bent
Stacey F. Bent Stanford University

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