World's Best Scientists 2026 revealed!

D-Index & Metrics

Materials Science

D-Index
48
Citations
12016
World Ranking
10726
National Ranking
478

Engineering and Technology

D-Index
48
Citations
11943
World Ranking
4479
National Ranking
108

Overview

Hyoungsub Kim is affiliated with Sungkyunkwan University in South Korea. Their research primarily spans the fields of Engineering and Materials Science, with a focus on Electrical and Electronic Engineering and Materials Chemistry as the main subfields. Additional subfields include Atomic and Molecular Physics, and Optics, Biomedical Engineering, and Electronic, Optical and Magnetic Materials.

The scientist's work covers several specialized topics, including:

  • Semiconductor materials and devices
  • Ferroelectric and Negative Capacitance Devices
  • MXene and MAX Phase Materials
  • 2D Materials and Applications
  • Advancements in Semiconductor Devices and Circuit Design
  • Semiconductor materials and interfaces
  • Advanced Memory and Neural Computing

Hyoungsub Kim has contributed to multiple publication venues throughout their career. The most frequent journals and their publication counts are:

  • physica status solidi (RRL) - Rapid Research Letters: 5 publications
  • ACS Applied Materials & Interfaces: 3 publications
  • Applied Surface Science: 3 publications
  • Journal of Alloys and Compounds: 2 publications
  • Journal of Physics D Applied Physics: 2 publications

Selected recent papers produced by Hyoungsub Kim include:

  • "Resistive switching and synaptic behaviors of an HfO2/Al2O3 stack on ITO for neuromorphic systems," 2020, Journal of Alloys and Compounds
  • "Unveiling the Origin of Robust Ferroelectricity in Sub-2 nm Hafnium Zirconium Oxide Films," 2021, ACS Applied Materials & Interfaces
  • "Solution printable multifunctional polymer-based composites for smart electromagnetic interference shielding with tunable frequency and on-off selectivities," 2023, Advanced Composites and Hybrid Materials
  • "Traps at the hBN/WSe2 interface and their impact on polarity transition in WSe2," 2021, 2D Materials
  • "Ferroelectric switching in GeTe through rotation of lone-pair electrons by Electric field-driven phase transition," 2021, Applied Materials Today

The scientist has collaborated frequently with several coauthors, including:

  • Deokjoon Eom
  • Woohui Lee
  • Hyangsook Lee
  • Eunha Lee
  • Joohee Oh

Best Publications

  • High-mobility and low-power thin-film transistors based on multilayer MoS2 crystals

    Sunkook Kim;Sunkook Kim;Aniruddha Konar;Wan-Sik Hwang;Jong Hak Lee

  • High-κ dielectrics for advanced carbon- nanotube transistors and logic gates

    Ali Javey;Hyoungsub Kim;Markus Brink;Qian Wang

  • Germanium nanowire field-effect transistors with SiO2 and high-κ HfO2 gate dielectrics

    Dunwei Wang;Qian Wang;Ali Javey;Ryan Tu

  • Effects of hydroxyl groups in polymeric dielectrics on organic transistor performance

    Sangyun Lee;Bonwon Koo;Joonghan Shin;Eunkyong Lee

  • Effects of crystallization on the electrical properties of ultrathin HfO2 dielectrics grown by atomic layer deposition

    Hyoungsub Kim;Paul C. McIntyre;Krishna C. Saraswat

  • A sub-400/spl deg/C germanium MOSFET technology with high-/spl kappa/ dielectric and metal gate

    Chi On Chui;Hyoungsub Kim;D. Chi;B.B. Triplett

  • Engineering chemically abrupt high-k metal oxide∕silicon interfaces using an oxygen-gettering metal overlayer

    Hyoungsub Kim;Paul C. McIntyre;Chi On Chui;Krishna C. Saraswat

  • Carrier-Type Modulation and Mobility Improvement of Thin MoTe2.

    Deshun Qu;Xiaochi Liu;Ming Huang;Changmin Lee

  • Improved growth behavior of atomic-layer-deposited high-k dielectrics on multilayer MoS2 by oxygen plasma pretreatment.

    Jaehyun Yang;Sunkook Kim;Woong Choi;Sang Han Park

  • Investigation of Self-Assembled Monolayer Resists for Hafnium Dioxide Atomic Layer Deposition

    Rong Chen;Hyoungsub Kim;Paul C. Mcintyre;Stacey F. Bent

  • Atomic layer deposition of ZrO2 on W for metal-insulator-metal capacitor application

    Sang-Yun Lee;Hyoungsub Kim;Paul C. McIntyre;Krishna C. Saraswat

  • Interfacial characteristics of HfO2 grown on nitrided Ge (100) substrates by atomic-layer deposition

    Hyoungsub Kim;Paul C. McIntyre;Chi On Chui;Krishna C. Saraswat

  • Achieving area-selective atomic layer deposition on patterned substrates by selective surface modification

    Rong Chen;Hyoungsub Kim;Paul C. McIntyre;David W. Porter

  • Self-assembled monolayer resist for atomic layer deposition of HfO2 and ZrO2 high-κ gate dielectrics

    Rong Chen;Hyoungsub Kim;Paul C. McIntyre;Stacey F. Bent

  • Atomic layer deposition of high-/spl kappa/ dielectric for germanium MOS applications - substrate

    Chi On Chui;H. Kim;P.C. McIntyre;K.C. Saraswat

  • Assessment of silicon MOS and carbon nanotube FET performance limits using a general theory of ballistic transistors

    Jing Guo;S. Datta;M. Lundstrom;M. Brink

  • Local epitaxial growth of ZrO2 on Ge (100) substrates by atomic layer epitaxy

    Hyoungsub Kim;Chi On Chui;Krishna C. Saraswat;Paul C. McIntyre

  • Spinodal decomposition in amorphous metal–silicate thin films: Phase diagram analysis and interface effects on kinetics

    H. Kim;P. C. McIntyre

  • Ligne de bit enterrée et cellule de porte cylindrique et procédé de fabrication de ces éléments.

    Hyoung-Sub Kim

  • Structural, electronic, and dielectric properties of ultrathin zirconia films on silicon

    S. Sayan;N. V. Nguyen;J. Ehrstein;Thomas Emge

Frequent Co-Authors

Paul C. McIntyre
Paul C. McIntyre Stanford University
Krishna C. Saraswat
Krishna C. Saraswat Stanford University
Chi On Chui
Chi On Chui University of California, Los Angeles
Junsin Yi
Junsin Yi Sungkyunkwan University
Cheol-Woong Yang
Cheol-Woong Yang Sungkyunkwan University
Hyung Koun Cho
Hyung Koun Cho Sungkyunkwan University
Jiyoung Kim
Jiyoung Kim The University of Texas at Dallas
Jack C. Lee
Jack C. Lee The University of Texas at Austin
Rong Chen
Rong Chen Icahn School of Medicine at Mount Sinai
Stacey F. Bent
Stacey F. Bent Stanford University

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