H-Index & Metrics Top Publications

H-Index & Metrics

Discipline name H-index Citations Publications World Ranking National Ranking
Electronics and Electrical Engineering H-index 123 Citations 37,529 379 World Ranking 15 National Ranking 7
Materials Science H-index 124 Citations 37,115 327 World Ranking 154 National Ranking 74

Overview

What is he best known for?

The fields of study he is best known for:

  • Transistor
  • Integrated circuit
  • Electrical engineering

Leonard Forbes mainly focuses on Optoelectronics, Gate oxide, Electrical engineering, Dielectric and Transistor. His work deals with themes such as Metal gate, Capacitor, MOSFET, Electronic engineering and Flash memory, which intersect with Optoelectronics. His Gate oxide study combines topics from a wide range of disciplines, such as Oxide, Gate dielectric, Oxide thin-film transistor and Permittivity.

His research investigates the link between Electrical engineering and topics such as Body region that cross with problems in Trench and Pillar. His Dielectric research includes elements of Equivalent oxide thickness and Atomic layer deposition. His Transistor study integrates concerns from other disciplines, such as Memory address, CMOS and Quantum tunnelling.

His most cited work include:

  • Atomic layer-deposited laaio3 films for gate dielectrics (361 citations)
  • Lanthanide oxide / hafnium oxide dielectric layers (297 citations)
  • Structure and method for a high performance electronic packaging assembly (287 citations)

What are the main themes of his work throughout his whole career to date?

His main research concerns Optoelectronics, Electrical engineering, Transistor, Electronic engineering and Layer. Leonard Forbes has researched Optoelectronics in several fields, including Oxide and Substrate, Gate oxide. His Transistor research focuses on CMOS and how it connects with NMOS logic.

His research investigates the connection between Electronic engineering and topics such as Substrate that intersect with issues in Electrical conductor. His studies in Layer integrate themes in fields like Doping and Semiconductor. Leonard Forbes has included themes like Inorganic chemistry, Lanthanum, Equivalent oxide thickness and Atomic layer deposition in his Dielectric study.

He most often published in these fields:

  • Optoelectronics (57.73%)
  • Electrical engineering (37.66%)
  • Transistor (31.91%)

What were the highlights of his more recent work (between 2006-2016)?

  • Optoelectronics (57.73%)
  • Dielectric (22.04%)
  • Electronic engineering (27.80%)

In recent papers he was focusing on the following fields of study:

The scientist’s investigation covers issues in Optoelectronics, Dielectric, Electronic engineering, Oxide and Transistor. His Optoelectronics research incorporates elements of Semiconductor device, Equivalent oxide thickness, Layer, Substrate and Gate oxide. His Gate oxide course of study focuses on Gate dielectric and Dysprosium and Metal gate.

His work carried out in the field of Dielectric brings together such families of science as Inorganic chemistry, Lanthanum, Electronics and Atomic layer deposition. He interconnects Substrate, Capacitor, Oxide semiconductor, Composite material and Amplifier in the investigation of issues within Electronic engineering. Transistor is a subfield of Electrical engineering that Leonard Forbes explores.

Between 2006 and 2016, his most popular works were:

  • Hafnium tantalum titanium oxide films (239 citations)
  • Switched capacitor amplifier with higher gain and improved closed-loop gain accuracy (62 citations)
  • Nanowire transistor with surrounding gate (58 citations)

In his most recent research, the most cited papers focused on:

  • Integrated circuit
  • Transistor
  • Semiconductor

Leonard Forbes mostly deals with Optoelectronics, Oxide, Inorganic chemistry, Substrate and Transistor. His studies in Optoelectronics integrate themes in fields like Layer, Atomic layer deposition and Electrical engineering. In the field of Electrical engineering, his study on Memory cell and Shielded cable overlaps with subjects such as Shield and Planar.

His work investigates the relationship between Oxide and topics such as Chemical engineering that intersect with problems in Amorphous solid, Monolayer and Microstructure. His Inorganic chemistry research integrates issues from Dielectric layer, Dielectric and Equivalent oxide thickness. His Transistor research incorporates themes from Epitaxy, Electronic engineering, Semiconductor, Capacitor and Pillar.

This overview was generated by a machine learning system which analysed the scientist’s body of work. If you have any feedback, you can contact us here.

Top Publications

Atomic layer-deposited LaAlO3 films for gate dielectrics

Kie Y. Ahn;Leonard Forbes.
(2002)

502 Citations

Structure and method for a high performance electronic packaging assembly

Kie Y. Ahn;Leonard Forbes;Eugene H. Cloud.
(2001)

437 Citations

Atomic layer deposited dielectric layers

Kie Y. Ahn;Leonard Forbes.
(2004)

413 Citations

Lanthanide oxide / hafnium oxide dielectric layers

Kie Y. Ahn;Leonard Forbes.
(2004)

401 Citations

Memory cell having a vertical transistor with buried source/drain and dual gates

Wendell P. Noble;Leonard Forbes;Kie Y. Ahn.
(2000)

399 Citations

4 F2 folded bit line DRAM cell structure having buried bit and word lines

Wendell P. Noble;Leonard Forbes;Kie Y. Ahn.
(2000)

383 Citations

Atomic layer deposited nanolaminates of HfO2/ZrO2 films as gate dielectrics

Kie Y. Ahn;Leonard Forbes.
(2002)

357 Citations

Atomic layer deposition of metal oxynitride layers as gate dielectrics and semiconductor device structures utilizing metal oxynitride layers

Kie Y. Ahn;Leonard Forbes.
(2003)

351 Citations

High density flash memory

Leonard Forbes;Wendell P. Noble.
(1997)

347 Citations

ATOMIC LAYER DEPOSITION OF Zrx Hfy Sn1-x-y O2 FILMS AS HIGH k GATE DIELECTRICS

Kie Y. Ahn;Leonard Forbes.
(2005)

324 Citations

Profile was last updated on December 6th, 2021.
Research.com Ranking is based on data retrieved from the Microsoft Academic Graph (MAG).
The ranking h-index is inferred from publications deemed to belong to the considered discipline.

If you think any of the details on this page are incorrect, let us know.

Contact us

Top Scientists Citing Leonard Forbes

Gurtej S. Sandhu

Gurtej S. Sandhu

Micron (United States)

Publications: 94

Robert S. Chau

Robert S. Chau

Intel (United States)

Publications: 64

Alan G. Wood

Alan G. Wood

Micron (United States)

Publications: 51

Kangguo Cheng

Kangguo Cheng

IBM (United States)

Publications: 48

Edward J. Nowak

Edward J. Nowak

IBM (United States)

Publications: 47

Brian S. Doyle

Brian S. Doyle

Intel (United States)

Publications: 46

Justin K. Brask

Justin K. Brask

Intel (United States)

Publications: 45

Suman Datta

Suman Datta

University of Notre Dame

Publications: 43

Michael John Sebastian Smith

Michael John Sebastian Smith

Google (United States)

Publications: 42

Arup Bhattacharyya

Arup Bhattacharyya

Micron (United States)

Publications: 41

Chandra Mouli

Chandra Mouli

Micron (United States)

Publications: 38

Bruce B. Doris

Bruce B. Doris

IBM (United States)

Publications: 37

David R. Hembree

David R. Hembree

Micron (United States)

Publications: 33

Tsu-Jae King

Tsu-Jae King

University of California, Berkeley

Publications: 32

Hsiang-Lan Lung

Hsiang-Lan Lung

IBM (United States)

Publications: 31

Something went wrong. Please try again later.