World's Best Scientists 2026 revealed!
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Electronics and Electrical Engineering
USA
2026
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Materials Science
USA
2022

D-Index & Metrics

Discipline name D-Index World Ranking Current World Ranking National Ranking Current National Ranking Publications Citations
Electronics and Electrical Engineering 128 42 42 23 23 405 40978
Materials Science 125 416 397 151 137 347 38627

Leonard Forbes publications per year

The chart shows the history of publications by Leonard Forbes between 1996 and 2016, highlighting the no. of papers published in each year and offering an overview of the publication velocity of this scholar. Leonard Forbes published across 21 years, from 1996 to 2016, averaging 20.9 papers a year. Output peaked at 55 publications in 2002. 4 of the 439 publications appeared in the last two years.

No. of publications
10 20 30 40 50
Bar chart. Horizontal axis: year, 1996 to 2016. Vertical axis: number of publications, 0 to 55. Peak 55 publications in 2002. 1996: 1 publication 1997: 7 publications 1998: 22 publications 1999: 19 publications 2000: 27 publications 2001: 46 publications 2002: 55 publications 2003: 34 publications 2004: 50 publications 2005: 43 publications 2006: 55 publications 2007: 27 publications 2008: 9 publications 2009: 6 publications 2010: 4 publications 2011: 14 publications 2012: 10 publications 2013: 4 publications 2014: 2 publications 2015: 3 publications 2016: 1 publication
1996 2016

439 publications in total across all disciplines

View publications per year as a table
Leonard Forbes: publications per year, 1996 to 2016
Year Publications
1996 1
1997 7
1998 22
1999 19
2000 27
2001 46
2002 55
2003 34
2004 50
2005 43
2006 55
2007 27
2008 9
2009 6
2010 4
2011 14
2012 10
2013 4
2014 2
2015 3
2016 1
Total 439
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Leonard Forbes publication distribution in Electronics and Electrical Engineering in 2026

The chart shows the distribution of publications by all Research.com ranked scientists in the field of Electronics and Electrical Engineering in 2026. The highlighted bar marks where Leonard Forbes sits on this spectrum.

No. of scientists
100 200 300 400
Bar chart with 53 bars. Horizontal axis: publications, 34–53 to 1,065+. Vertical axis: number of scientists, 0 to 445. Most scientists, 445, have 174–193 publications. The last bar groups every scientist with 1,065 publications or more. The highlighted bar, 394–413 publications, is where this scientist sits. 34–53 publications: 24 scientists 54–73 publications: 52 scientists 74–93 publications: 114 scientists 94–113 publications: 203 scientists 114–133 publications: 269 scientists 134–153 publications: 355 scientists 154–173 publications: 403 scientists 174–193 publications: 445 scientists 194–213 publications: 430 scientists 214–233 publications: 431 scientists 234–253 publications: 399 scientists 254–273 publications: 366 scientists 274–293 publications: 335 scientists 294–313 publications: 300 scientists 314–333 publications: 276 scientists 334–353 publications: 250 scientists 354–373 publications: 214 scientists 374–393 publications: 187 scientists 394–413 publications: 152 scientists 414–433 publications: 169 scientists 434–453 publications: 147 scientists 454–473 publications: 111 scientists 474–493 publications: 117 scientists 494–513 publications: 103 scientists 514–533 publications: 99 scientists 534–553 publications: 92 scientists 554–573 publications: 75 scientists 574–593 publications: 58 scientists 594–613 publications: 69 scientists 614–633 publications: 50 scientists 634–653 publications: 62 scientists 654–673 publications: 54 scientists 674–693 publications: 44 scientists 694–713 publications: 37 scientists 714–733 publications: 28 scientists 734–753 publications: 26 scientists 754–773 publications: 26 scientists 774–793 publications: 19 scientists 794–813 publications: 23 scientists 814–833 publications: 20 scientists 834–853 publications: 16 scientists 854–873 publications: 20 scientists 874–893 publications: 11 scientists 894–913 publications: 11 scientists 914–933 publications: 16 scientists 934–953 publications: 13 scientists 954–973 publications: 10 scientists 974–993 publications: 11 scientists 994–1,013 publications: 9 scientists 1,014–1,033 publications: 9 scientists 1,034–1,053 publications: 10 scientists 1,054–1,064 publications: 6 scientists 1,065+ publications: 99 scientists
34–53 publications 1,065+

This scientist: 405 publications — 75th percentile

75% of scientists in this discipline score the same or lower.

The last bar groups every scientist with 1,065 publications or more.

View publications distribution as a table
Number of Electronics and Electrical Engineering scientists by publication count, Research.com 2026 ranking edition. Based on 6,875 ranked scientists.
Publications Scientists This scientist
34–53 24
54–73 52
74–93 114
94–113 203
114–133 269
134–153 355
154–173 403
174–193 445
194–213 430
214–233 431
234–253 399
254–273 366
274–293 335
294–313 300
314–333 276
334–353 250
354–373 214
374–393 187
394–413 152 405
414–433 169
434–453 147
454–473 111
474–493 117
494–513 103
514–533 99
534–553 92
554–573 75
574–593 58
594–613 69
614–633 50
634–653 62
654–673 54
674–693 44
694–713 37
714–733 28
734–753 26
754–773 26
774–793 19
794–813 23
814–833 20
834–853 16
854–873 20
874–893 11
894–913 11
914–933 16
934–953 13
954–973 10
974–993 11
994–1,013 9
1,014–1,033 9
1,034–1,053 10
1,054–1,064 6
1,065+ 99
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Leonard Forbes D-index placement in Electronics and Electrical Engineering in 2026

The chart shows the D-index (discipline H-index) distribution of Electronics and Electrical Engineering scientists ranked by Research.com in 2026. The highlighted bar marks where Leonard Forbes sits on this spectrum.

No. of scientists
50 100 150 200 250
Bar chart with 82 bars. Horizontal axis: D-Index, 30 to 111+. Vertical axis: number of scientists, 0 to 263. Most scientists, 263, have 32 D-Index. The last bar groups every scientist with 111 D-Index or more. The highlighted bar, 111+ D-Index, is where this scientist sits. 30 D-Index: 178 scientists 31 D-Index: 257 scientists 32 D-Index: 263 scientists 33 D-Index: 262 scientists 34 D-Index: 244 scientists 35 D-Index: 236 scientists 36 D-Index: 211 scientists 37 D-Index: 220 scientists 38 D-Index: 214 scientists 39 D-Index: 214 scientists 40 D-Index: 205 scientists 41 D-Index: 187 scientists 42 D-Index: 194 scientists 43 D-Index: 201 scientists 44 D-Index: 155 scientists 45 D-Index: 189 scientists 46 D-Index: 148 scientists 47 D-Index: 160 scientists 48 D-Index: 134 scientists 49 D-Index: 130 scientists 50 D-Index: 141 scientists 51 D-Index: 156 scientists 52 D-Index: 108 scientists 53 D-Index: 130 scientists 54 D-Index: 112 scientists 55 D-Index: 97 scientists 56 D-Index: 111 scientists 57 D-Index: 102 scientists 58 D-Index: 108 scientists 59 D-Index: 120 scientists 60 D-Index: 103 scientists 61 D-Index: 93 scientists 62 D-Index: 92 scientists 63 D-Index: 74 scientists 64 D-Index: 77 scientists 65 D-Index: 73 scientists 66 D-Index: 64 scientists 67 D-Index: 69 scientists 68 D-Index: 60 scientists 69 D-Index: 39 scientists 70 D-Index: 57 scientists 71 D-Index: 59 scientists 72 D-Index: 46 scientists 73 D-Index: 49 scientists 74 D-Index: 38 scientists 75 D-Index: 35 scientists 76 D-Index: 32 scientists 77 D-Index: 35 scientists 78 D-Index: 31 scientists 79 D-Index: 22 scientists 80 D-Index: 34 scientists 81 D-Index: 31 scientists 82 D-Index: 34 scientists 83 D-Index: 23 scientists 84 D-Index: 18 scientists 85 D-Index: 30 scientists 86 D-Index: 19 scientists 87 D-Index: 19 scientists 88 D-Index: 20 scientists 89 D-Index: 8 scientists 90 D-Index: 17 scientists 91 D-Index: 7 scientists 92 D-Index: 14 scientists 93 D-Index: 9 scientists 94 D-Index: 15 scientists 95 D-Index: 10 scientists 96 D-Index: 12 scientists 97 D-Index: 10 scientists 98 D-Index: 10 scientists 99 D-Index: 12 scientists 100 D-Index: 16 scientists 101 D-Index: 5 scientists 102 D-Index: 7 scientists 103 D-Index: 7 scientists 104 D-Index: 8 scientists 105 D-Index: 9 scientists 106 D-Index: 13 scientists 107 D-Index: 4 scientists 108 D-Index: 5 scientists 109 D-Index: 10 scientists 110 D-Index: 8 scientists 111+ D-Index: 96 scientists
30 D-Index 111+

This scientist: 128 D-Index — 99th percentile

99% of scientists in this discipline score the same or lower.

The last bar groups every scientist with 111 D-Index or more.

View D-Index distribution as a table
Number of Electronics and Electrical Engineering scientists by D-index, Research.com 2026 ranking edition. Based on 6,875 ranked scientists.
D-Index Scientists This scientist
30 178
31 257
32 263
33 262
34 244
35 236
36 211
37 220
38 214
39 214
40 205
41 187
42 194
43 201
44 155
45 189
46 148
47 160
48 134
49 130
50 141
51 156
52 108
53 130
54 112
55 97
56 111
57 102
58 108
59 120
60 103
61 93
62 92
63 74
64 77
65 73
66 64
67 69
68 60
69 39
70 57
71 59
72 46
73 49
74 38
75 35
76 32
77 35
78 31
79 22
80 34
81 31
82 34
83 23
84 18
85 30
86 19
87 19
88 20
89 8
90 17
91 7
92 14
93 9
94 15
95 10
96 12
97 10
98 10
99 12
100 16
101 5
102 7
103 7
104 8
105 9
106 13
107 4
108 5
109 10
110 8
111+ 96 128
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Research.com Recognitions

  • 2026 - Research.com Electronics and Electrical Engineering in United States Leader Award
  • 2025 - Research.com Electronics and Electrical Engineering in United States Leader Award
  • 2022 - Research.com Electronics and Electrical Engineering in United States Leader Award
  • 2022 - Research.com Materials Science in United States Leader Award

Overview

What is he best known for?

The fields of study he is best known for:

  • Transistor
  • Integrated circuit
  • Electrical engineering

Leonard Forbes mainly focuses on Optoelectronics, Gate oxide, Electrical engineering, Dielectric and Transistor. His work deals with themes such as Metal gate, Capacitor, MOSFET, Electronic engineering and Flash memory, which intersect with Optoelectronics. His Gate oxide study combines topics from a wide range of disciplines, such as Oxide, Gate dielectric, Oxide thin-film transistor and Permittivity.

His research investigates the link between Electrical engineering and topics such as Body region that cross with problems in Trench and Pillar. His Dielectric research includes elements of Equivalent oxide thickness and Atomic layer deposition. His Transistor study integrates concerns from other disciplines, such as Memory address, CMOS and Quantum tunnelling.

His most cited work include:

  • Atomic layer-deposited laaio3 films for gate dielectrics (361 citations)
  • Lanthanide oxide / hafnium oxide dielectric layers (297 citations)
  • Structure and method for a high performance electronic packaging assembly (287 citations)

What are the main themes of his work throughout his whole career to date?

His main research concerns Optoelectronics, Electrical engineering, Transistor, Electronic engineering and Layer. Leonard Forbes has researched Optoelectronics in several fields, including Oxide and Substrate, Gate oxide. His Transistor research focuses on CMOS and how it connects with NMOS logic.

His research investigates the connection between Electronic engineering and topics such as Substrate that intersect with issues in Electrical conductor. His studies in Layer integrate themes in fields like Doping and Semiconductor. Leonard Forbes has included themes like Inorganic chemistry, Lanthanum, Equivalent oxide thickness and Atomic layer deposition in his Dielectric study.

He most often published in these fields:

  • Optoelectronics (57.73%)
  • Electrical engineering (37.66%)
  • Transistor (31.91%)

What were the highlights of his more recent work (between 2006-2016)?

  • Optoelectronics (57.73%)
  • Dielectric (22.04%)
  • Electronic engineering (27.80%)

In recent papers he was focusing on the following fields of study:

The scientist’s investigation covers issues in Optoelectronics, Dielectric, Electronic engineering, Oxide and Transistor. His Optoelectronics research incorporates elements of Semiconductor device, Equivalent oxide thickness, Layer, Substrate and Gate oxide. His Gate oxide course of study focuses on Gate dielectric and Dysprosium and Metal gate.

His work carried out in the field of Dielectric brings together such families of science as Inorganic chemistry, Lanthanum, Electronics and Atomic layer deposition. He interconnects Substrate, Capacitor, Oxide semiconductor, Composite material and Amplifier in the investigation of issues within Electronic engineering. Transistor is a subfield of Electrical engineering that Leonard Forbes explores.

Between 2006 and 2016, his most popular works were:

  • Hafnium tantalum titanium oxide films (239 citations)
  • Switched capacitor amplifier with higher gain and improved closed-loop gain accuracy (62 citations)
  • Nanowire transistor with surrounding gate (58 citations)

In his most recent research, the most cited papers focused on:

  • Integrated circuit
  • Transistor
  • Semiconductor

Leonard Forbes mostly deals with Optoelectronics, Oxide, Inorganic chemistry, Substrate and Transistor. His studies in Optoelectronics integrate themes in fields like Layer, Atomic layer deposition and Electrical engineering. In the field of Electrical engineering, his study on Memory cell and Shielded cable overlaps with subjects such as Shield and Planar.

His work investigates the relationship between Oxide and topics such as Chemical engineering that intersect with problems in Amorphous solid, Monolayer and Microstructure. His Inorganic chemistry research integrates issues from Dielectric layer, Dielectric and Equivalent oxide thickness. His Transistor research incorporates themes from Epitaxy, Electronic engineering, Semiconductor, Capacitor and Pillar.

Best Publications

  • Atomic layer-deposited laaio3 films for gate dielectrics

    Kie Y. Ahn;Leonard Forbes

  • Electronic apparatus with deposited dielectric layers

    Kie Y. Ahn;Leonard Forbes

  • Lanthanide oxide / hafnium oxide dielectric layers

    Kie Y. Ahn;Leonard Forbes

  • Structure and method for a high performance electronic packaging assembly

    Kie Y. Ahn;Leonard Forbes;Eugene H. Cloud

  • Atomic layer deposition of metal oxynitride layers as gate dielectrics

    Kie Ahn;Leonard Forbes

  • Dielectric stack containing lanthanum and hafnium

    Kie Y. Ahn;Leonard Forbes

  • Zirconium titanium oxide films

    Kie Y. Ahn;Leonard Forbes

  • Memory cell having a vertical transistor with buried source/drain and dual gates

    Wendell P. Noble;Leonard Forbes;Kie Y. Ahn

  • Memory cell with vertical transistor and buried word and body lines

    Leonard Forbes;Wendell P. Noble;Kie Y. Ahn

  • ZrXHfYSn1-X-YO2 FILMS AS HIGH K GATE DIELECTRICS

    Kie Y. Ahn;Leonard Forbes

  • Atomic layer deposition of CMOS gates with variable work functions

    Leonard Forbes;Kie Y. Ahn

  • 4 F2 folded bit line dram cell structure having buried bit and word lines

    Wendell P. Noble;Leonard Forbes;Kie Y. Ahn

  • Hafnium aluminium oxynitride high-K dielectric and metal gates

    Leonard Forbes;Kie Y. Ahn;Arup Bhattacharyya

  • Hafnium tantalum titanium oxide films

    Kie Y. Ahn;Leonard Forbes

  • Nanolaminates of hafnium oxide and zirconium oxide

    Kie Y. Ahn;Leonard Forbes

  • HfAlO3 films for gate dielectrics

    Kie Y. Ahn;Leonard Forbes

  • Hafnium tantalum oxide dielectrics

    Kie Y. Ahn;Leonard Forbes

  • Silicon on germanium

    Kie Y. Ahn;Leonard Forbes

  • Ultra high density flash memory

    Wendell P. Noble;Leonard Forbes

  • Methods for atomic-layer deposition

    Kie Y. Ahn;Leonard Forbes

  • Hafnium tantalum oxynitride dielectric

    Leonard Forbes;Kie Y. Ahn;Arup Bhattacharyya

Frequent Co-Authors

Kie Y. Ahn
Kie Y. Ahn Micron (United States)
Wendell P. Noble
Wendell P. Noble Micron (United States)
Arup Bhattacharyya
Arup Bhattacharyya Micron (United States)
Salman Akram
Salman Akram Micron (United States)
Brent Keeth
Brent Keeth Micron (United States)

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