World's Best Scientists 2026 revealed!
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Electronics and Electrical Engineering
USA
2026
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Materials Science
USA
2022

D-Index & Metrics

Electronics and Electrical Engineering

D-Index
128
Citations
40978
World Ranking
42
National Ranking
23

Materials Science

D-Index
125
Citations
38627
World Ranking
416
National Ranking
151

Research.com Recognitions

  • 2026 - Research.com Electronics and Electrical Engineering in United States Leader Award
  • 2025 - Research.com Electronics and Electrical Engineering in United States Leader Award
  • 2022 - Research.com Electronics and Electrical Engineering in United States Leader Award
  • 2022 - Research.com Materials Science in United States Leader Award

Overview

What is he best known for?

The fields of study he is best known for:

  • Transistor
  • Integrated circuit
  • Electrical engineering

Leonard Forbes mainly focuses on Optoelectronics, Gate oxide, Electrical engineering, Dielectric and Transistor. His work deals with themes such as Metal gate, Capacitor, MOSFET, Electronic engineering and Flash memory, which intersect with Optoelectronics. His Gate oxide study combines topics from a wide range of disciplines, such as Oxide, Gate dielectric, Oxide thin-film transistor and Permittivity.

His research investigates the link between Electrical engineering and topics such as Body region that cross with problems in Trench and Pillar. His Dielectric research includes elements of Equivalent oxide thickness and Atomic layer deposition. His Transistor study integrates concerns from other disciplines, such as Memory address, CMOS and Quantum tunnelling.

His most cited work include:

  • Atomic layer-deposited laaio3 films for gate dielectrics (361 citations)
  • Lanthanide oxide / hafnium oxide dielectric layers (297 citations)
  • Structure and method for a high performance electronic packaging assembly (287 citations)

What are the main themes of his work throughout his whole career to date?

His main research concerns Optoelectronics, Electrical engineering, Transistor, Electronic engineering and Layer. Leonard Forbes has researched Optoelectronics in several fields, including Oxide and Substrate, Gate oxide. His Transistor research focuses on CMOS and how it connects with NMOS logic.

His research investigates the connection between Electronic engineering and topics such as Substrate that intersect with issues in Electrical conductor. His studies in Layer integrate themes in fields like Doping and Semiconductor. Leonard Forbes has included themes like Inorganic chemistry, Lanthanum, Equivalent oxide thickness and Atomic layer deposition in his Dielectric study.

He most often published in these fields:

  • Optoelectronics (57.73%)
  • Electrical engineering (37.66%)
  • Transistor (31.91%)

What were the highlights of his more recent work (between 2006-2016)?

  • Optoelectronics (57.73%)
  • Dielectric (22.04%)
  • Electronic engineering (27.80%)

In recent papers he was focusing on the following fields of study:

The scientist’s investigation covers issues in Optoelectronics, Dielectric, Electronic engineering, Oxide and Transistor. His Optoelectronics research incorporates elements of Semiconductor device, Equivalent oxide thickness, Layer, Substrate and Gate oxide. His Gate oxide course of study focuses on Gate dielectric and Dysprosium and Metal gate.

His work carried out in the field of Dielectric brings together such families of science as Inorganic chemistry, Lanthanum, Electronics and Atomic layer deposition. He interconnects Substrate, Capacitor, Oxide semiconductor, Composite material and Amplifier in the investigation of issues within Electronic engineering. Transistor is a subfield of Electrical engineering that Leonard Forbes explores.

Between 2006 and 2016, his most popular works were:

  • Hafnium tantalum titanium oxide films (239 citations)
  • Switched capacitor amplifier with higher gain and improved closed-loop gain accuracy (62 citations)
  • Nanowire transistor with surrounding gate (58 citations)

In his most recent research, the most cited papers focused on:

  • Integrated circuit
  • Transistor
  • Semiconductor

Leonard Forbes mostly deals with Optoelectronics, Oxide, Inorganic chemistry, Substrate and Transistor. His studies in Optoelectronics integrate themes in fields like Layer, Atomic layer deposition and Electrical engineering. In the field of Electrical engineering, his study on Memory cell and Shielded cable overlaps with subjects such as Shield and Planar.

His work investigates the relationship between Oxide and topics such as Chemical engineering that intersect with problems in Amorphous solid, Monolayer and Microstructure. His Inorganic chemistry research integrates issues from Dielectric layer, Dielectric and Equivalent oxide thickness. His Transistor research incorporates themes from Epitaxy, Electronic engineering, Semiconductor, Capacitor and Pillar.

Best Publications

  • Atomic layer-deposited laaio3 films for gate dielectrics

    Kie Y. Ahn;Leonard Forbes

  • Electronic apparatus with deposited dielectric layers

    Kie Y. Ahn;Leonard Forbes

  • Lanthanide oxide / hafnium oxide dielectric layers

    Kie Y. Ahn;Leonard Forbes

  • Structure and method for a high performance electronic packaging assembly

    Kie Y. Ahn;Leonard Forbes;Eugene H. Cloud

  • Atomic layer deposition of metal oxynitride layers as gate dielectrics

    Kie Ahn;Leonard Forbes

  • Dielectric stack containing lanthanum and hafnium

    Kie Y. Ahn;Leonard Forbes

  • Zirconium titanium oxide films

    Kie Y. Ahn;Leonard Forbes

  • Memory cell having a vertical transistor with buried source/drain and dual gates

    Wendell P. Noble;Leonard Forbes;Kie Y. Ahn

  • Memory cell with vertical transistor and buried word and body lines

    Leonard Forbes;Wendell P. Noble;Kie Y. Ahn

  • ZrXHfYSn1-X-YO2 FILMS AS HIGH K GATE DIELECTRICS

    Kie Y. Ahn;Leonard Forbes

  • Atomic layer deposition of CMOS gates with variable work functions

    Leonard Forbes;Kie Y. Ahn

  • 4 F2 folded bit line dram cell structure having buried bit and word lines

    Wendell P. Noble;Leonard Forbes;Kie Y. Ahn

  • Hafnium aluminium oxynitride high-K dielectric and metal gates

    Leonard Forbes;Kie Y. Ahn;Arup Bhattacharyya

  • Hafnium tantalum titanium oxide films

    Kie Y. Ahn;Leonard Forbes

  • Nanolaminates of hafnium oxide and zirconium oxide

    Kie Y. Ahn;Leonard Forbes

  • HfAlO3 films for gate dielectrics

    Kie Y. Ahn;Leonard Forbes

  • Hafnium tantalum oxide dielectrics

    Kie Y. Ahn;Leonard Forbes

  • Silicon on germanium

    Kie Y. Ahn;Leonard Forbes

  • Ultra high density flash memory

    Wendell P. Noble;Leonard Forbes

  • Methods for atomic-layer deposition

    Kie Y. Ahn;Leonard Forbes

  • Hafnium tantalum oxynitride dielectric

    Leonard Forbes;Kie Y. Ahn;Arup Bhattacharyya

Frequent Co-Authors

Kie Y. Ahn
Kie Y. Ahn Micron (United States)
Wendell P. Noble
Wendell P. Noble Micron (United States)
Arup Bhattacharyya
Arup Bhattacharyya Micron (United States)
Salman Akram
Salman Akram Micron (United States)
Brent Keeth
Brent Keeth Micron (United States)

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