D-Index & Metrics Best Publications
Electronics and Electrical Engineering
USA
2023
Materials Science
USA
2023

D-Index & Metrics D-index (Discipline H-index) only includes papers and citation values for an examined discipline in contrast to General H-index which accounts for publications across all disciplines.

Discipline name D-index D-index (Discipline H-index) only includes papers and citation values for an examined discipline in contrast to General H-index which accounts for publications across all disciplines. Citations Publications World Ranking National Ranking
Electronics and Electrical Engineering D-index 128 Citations 40,878 405 World Ranking 22 National Ranking 11
Materials Science D-index 125 Citations 38,627 347 World Ranking 208 National Ranking 94

Research.com Recognitions

Awards & Achievements

2023 - Research.com Materials Science in United States Leader Award

2023 - Research.com Electronics and Electrical Engineering in United States Leader Award

2022 - Research.com Electronics and Electrical Engineering in United States Leader Award

Overview

What is he best known for?

The fields of study he is best known for:

  • Transistor
  • Integrated circuit
  • Electrical engineering

Leonard Forbes mainly focuses on Optoelectronics, Gate oxide, Electrical engineering, Dielectric and Transistor. His work deals with themes such as Metal gate, Capacitor, MOSFET, Electronic engineering and Flash memory, which intersect with Optoelectronics. His Gate oxide study combines topics from a wide range of disciplines, such as Oxide, Gate dielectric, Oxide thin-film transistor and Permittivity.

His research investigates the link between Electrical engineering and topics such as Body region that cross with problems in Trench and Pillar. His Dielectric research includes elements of Equivalent oxide thickness and Atomic layer deposition. His Transistor study integrates concerns from other disciplines, such as Memory address, CMOS and Quantum tunnelling.

His most cited work include:

  • Atomic layer-deposited laaio3 films for gate dielectrics (361 citations)
  • Lanthanide oxide / hafnium oxide dielectric layers (297 citations)
  • Structure and method for a high performance electronic packaging assembly (287 citations)

What are the main themes of his work throughout his whole career to date?

His main research concerns Optoelectronics, Electrical engineering, Transistor, Electronic engineering and Layer. Leonard Forbes has researched Optoelectronics in several fields, including Oxide and Substrate, Gate oxide. His Transistor research focuses on CMOS and how it connects with NMOS logic.

His research investigates the connection between Electronic engineering and topics such as Substrate that intersect with issues in Electrical conductor. His studies in Layer integrate themes in fields like Doping and Semiconductor. Leonard Forbes has included themes like Inorganic chemistry, Lanthanum, Equivalent oxide thickness and Atomic layer deposition in his Dielectric study.

He most often published in these fields:

  • Optoelectronics (57.73%)
  • Electrical engineering (37.66%)
  • Transistor (31.91%)

What were the highlights of his more recent work (between 2006-2016)?

  • Optoelectronics (57.73%)
  • Dielectric (22.04%)
  • Electronic engineering (27.80%)

In recent papers he was focusing on the following fields of study:

The scientist’s investigation covers issues in Optoelectronics, Dielectric, Electronic engineering, Oxide and Transistor. His Optoelectronics research incorporates elements of Semiconductor device, Equivalent oxide thickness, Layer, Substrate and Gate oxide. His Gate oxide course of study focuses on Gate dielectric and Dysprosium and Metal gate.

His work carried out in the field of Dielectric brings together such families of science as Inorganic chemistry, Lanthanum, Electronics and Atomic layer deposition. He interconnects Substrate, Capacitor, Oxide semiconductor, Composite material and Amplifier in the investigation of issues within Electronic engineering. Transistor is a subfield of Electrical engineering that Leonard Forbes explores.

Between 2006 and 2016, his most popular works were:

  • Hafnium tantalum titanium oxide films (239 citations)
  • Switched capacitor amplifier with higher gain and improved closed-loop gain accuracy (62 citations)
  • Nanowire transistor with surrounding gate (58 citations)

In his most recent research, the most cited papers focused on:

  • Integrated circuit
  • Transistor
  • Semiconductor

Leonard Forbes mostly deals with Optoelectronics, Oxide, Inorganic chemistry, Substrate and Transistor. His studies in Optoelectronics integrate themes in fields like Layer, Atomic layer deposition and Electrical engineering. In the field of Electrical engineering, his study on Memory cell and Shielded cable overlaps with subjects such as Shield and Planar.

His work investigates the relationship between Oxide and topics such as Chemical engineering that intersect with problems in Amorphous solid, Monolayer and Microstructure. His Inorganic chemistry research integrates issues from Dielectric layer, Dielectric and Equivalent oxide thickness. His Transistor research incorporates themes from Epitaxy, Electronic engineering, Semiconductor, Capacitor and Pillar.

This overview was generated by a machine learning system which analysed the scientist’s body of work. If you have any feedback, you can contact us here.

Best Publications

Atomic layer-deposited laaio3 films for gate dielectrics

Kie Y. Ahn;Leonard Forbes.
(2002)

564 Citations

Electronic apparatus with deposited dielectric layers

Kie Y. Ahn;Leonard Forbes.
(2005)

474 Citations

Lanthanide oxide / hafnium oxide dielectric layers

Kie Y. Ahn;Leonard Forbes.
(2003)

461 Citations

Structure and method for a high performance electronic packaging assembly

Kie Y. Ahn;Leonard Forbes;Eugene H. Cloud.
(1998)

438 Citations

Atomic layer deposition of metal oxynitride layers as gate dielectrics

Kie Ahn;Leonard Forbes.
(2005)

423 Citations

Atomic layer deposited dielectric layers

Kie Y. Ahn;Leonard Forbes.
(2004)

413 Citations

Dielectric stack containing lanthanum and hafnium

Kie Y. Ahn;Leonard Forbes.
(2008)

406 Citations

Zirconium titanium oxide films

Kie Y. Ahn;Leonard Forbes.
(2005)

397 Citations

Memory cell having a vertical transistor with buried source/drain and dual gates

Wendell P. Noble;Leonard Forbes;Kie Y. Ahn.
(2000)

396 Citations

Memory cell with vertical transistor and buried word and body lines

Leonard Forbes;Wendell P. Noble;Kie Y. Ahn.
(2001)

395 Citations

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