2023 - Research.com Materials Science in United States Leader Award
2023 - Research.com Electronics and Electrical Engineering in United States Leader Award
2022 - Research.com Electronics and Electrical Engineering in United States Leader Award
Leonard Forbes mainly focuses on Optoelectronics, Gate oxide, Electrical engineering, Dielectric and Transistor. His work deals with themes such as Metal gate, Capacitor, MOSFET, Electronic engineering and Flash memory, which intersect with Optoelectronics. His Gate oxide study combines topics from a wide range of disciplines, such as Oxide, Gate dielectric, Oxide thin-film transistor and Permittivity.
His research investigates the link between Electrical engineering and topics such as Body region that cross with problems in Trench and Pillar. His Dielectric research includes elements of Equivalent oxide thickness and Atomic layer deposition. His Transistor study integrates concerns from other disciplines, such as Memory address, CMOS and Quantum tunnelling.
His main research concerns Optoelectronics, Electrical engineering, Transistor, Electronic engineering and Layer. Leonard Forbes has researched Optoelectronics in several fields, including Oxide and Substrate, Gate oxide. His Transistor research focuses on CMOS and how it connects with NMOS logic.
His research investigates the connection between Electronic engineering and topics such as Substrate that intersect with issues in Electrical conductor. His studies in Layer integrate themes in fields like Doping and Semiconductor. Leonard Forbes has included themes like Inorganic chemistry, Lanthanum, Equivalent oxide thickness and Atomic layer deposition in his Dielectric study.
The scientist’s investigation covers issues in Optoelectronics, Dielectric, Electronic engineering, Oxide and Transistor. His Optoelectronics research incorporates elements of Semiconductor device, Equivalent oxide thickness, Layer, Substrate and Gate oxide. His Gate oxide course of study focuses on Gate dielectric and Dysprosium and Metal gate.
His work carried out in the field of Dielectric brings together such families of science as Inorganic chemistry, Lanthanum, Electronics and Atomic layer deposition. He interconnects Substrate, Capacitor, Oxide semiconductor, Composite material and Amplifier in the investigation of issues within Electronic engineering. Transistor is a subfield of Electrical engineering that Leonard Forbes explores.
Leonard Forbes mostly deals with Optoelectronics, Oxide, Inorganic chemistry, Substrate and Transistor. His studies in Optoelectronics integrate themes in fields like Layer, Atomic layer deposition and Electrical engineering. In the field of Electrical engineering, his study on Memory cell and Shielded cable overlaps with subjects such as Shield and Planar.
His work investigates the relationship between Oxide and topics such as Chemical engineering that intersect with problems in Amorphous solid, Monolayer and Microstructure. His Inorganic chemistry research integrates issues from Dielectric layer, Dielectric and Equivalent oxide thickness. His Transistor research incorporates themes from Epitaxy, Electronic engineering, Semiconductor, Capacitor and Pillar.
This overview was generated by a machine learning system which analysed the scientist’s body of work. If you have any feedback, you can contact us here.
Atomic layer-deposited laaio3 films for gate dielectrics
Kie Y. Ahn;Leonard Forbes.
(2002)
Electronic apparatus with deposited dielectric layers
Kie Y. Ahn;Leonard Forbes.
(2005)
Lanthanide oxide / hafnium oxide dielectric layers
Kie Y. Ahn;Leonard Forbes.
(2003)
Structure and method for a high performance electronic packaging assembly
Kie Y. Ahn;Leonard Forbes;Eugene H. Cloud.
(1998)
Atomic layer deposition of metal oxynitride layers as gate dielectrics
Kie Ahn;Leonard Forbes.
(2005)
Atomic layer deposited dielectric layers
Kie Y. Ahn;Leonard Forbes.
(2004)
Dielectric stack containing lanthanum and hafnium
Kie Y. Ahn;Leonard Forbes.
(2008)
Zirconium titanium oxide films
Kie Y. Ahn;Leonard Forbes.
(2005)
Memory cell having a vertical transistor with buried source/drain and dual gates
Wendell P. Noble;Leonard Forbes;Kie Y. Ahn.
(2000)
Memory cell with vertical transistor and buried word and body lines
Leonard Forbes;Wendell P. Noble;Kie Y. Ahn.
(2001)
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