World's Best Scientists 2026 revealed!

D-Index & Metrics

Electronics and Electrical Engineering

D-Index
33
Citations
4158
World Ranking
6120
National Ranking
2028

Overview

Chandra Mouli is affiliated with Micron in the United States and has a research background spanning computer science and engineering. Their work primarily focuses on areas related to image processing, network security, and electronic engineering.

The scientist's research contributions cover several main fields of study, notably:

  • Computer Science
  • Engineering

Within these fields, their work extends into key subfields including:

  • Computer Vision and Pattern Recognition
  • Electrical and Electronic Engineering
  • Computer Networks and Communications
  • Media Technology
  • Artificial Intelligence

Mouli's main topics of work consist of:

  • Image Enhancement Techniques
  • Advanced Image Fusion Techniques
  • Advanced Image Processing Techniques
  • Advanced Steganography and Watermarking Techniques
  • Digital Media Forensic Detection
  • Network Security and Intrusion Detection
  • Biometric Identification and Security

Their notable recent publications include:

  • A comprehensive survey on image enhancement techniques with special emphasis on infrared images, 2021, Multimedia Tools and Applications
  • Robust digital color image watermarking based on compressive sensing and DWT, 2023, Multimedia Tools and Applications
  • Hyperspectral image classification using Walsh Hadamard transform-based key band selection and deep convolutional neural networks, 2024, International Journal of Remote Sensing
  • Design Principles of Self-Compensated NBTI-Free Negative Capacitor FinFET, 2020, IEEE Transactions on Electron Devices
  • Link survivability rate-based clustering for QoS maximisation in VANET, 2020, International Journal of Grid and Utility Computing

Mouli collaborates frequently with several co-authors including:

  • Gaurav Yadav
  • Dilip Kumar Yadav
  • S. Prasanth Vaidya
  • D Kalaivani
  • R. Srinivasa Perumal

Their work has appeared in a range of publication venues, with multiple contributions to:

  • Multimedia Tools and Applications
  • IEEE Transactions on Electron Devices
  • International Journal of Grid and Utility Computing
  • International Journal of Remote Sensing
  • The European Physical Journal E

Best Publications

  • Voltage-Triggered Ultrafast Phase Transition in Vanadium Dioxide Switches

    You Zhou;Xiaonan Chen;Changhyun Ko;Zheng Yang

  • Ge diffusion in Ge metal oxide semiconductor with chemical vapor deposition HfO2 dielectric

    N. Lu;W. Bai;A. Ramirez;C. Mouli

  • Storage devices formed on partially isolated semiconductor substrate islands

    Fernando Gonzalez;Chandra Mouli;Lyle Jones

  • Isolation techniques for reducing dark current in CMOS image sensors

    Chandra Mouli;Howard Rhodes

  • Image sensors with optical trench

    Ji Soo Lee;Chandra Mouli

  • Deep photodiode isolation process

    Howard Rhodes;Chandra Mouli

  • Reduced crosstalk sensor and method of formation

    Chandra Mouli

  • Photonic crystal-based lens elements for use in an image sensor

    Chandra Mouli

  • Memory with carbon-containing silicon channel

    Chandra Mouli

  • Soi device with reduced drain induced barrier lowering

    Chandra V. Mouli

  • Floating Body Field-Effect Transistors, and Methods of Forming Floating Body Field-Effect Transistors

    Jun Liu;Michael P. Violette;Chandra Mouli;Howard Kirsch

  • Deuterated structures for image sensors and methods for forming the same

    Chandra Mouli

  • CMOS imager technology shrinks and image performance

    H. Rhodes;G. Agranov;C. Hong;U. Boettiger

  • Semiconductor image sensor comprising a metal mesh filter

    Chandra Mouli

  • SOI CMOS device with reduced DIBL

    Chandra V. Mouli

  • Method and apparatus providing an optical guide for an imager pixel having a ring of air-filled spaced slots around a photosensor

    Chandra Mouli

  • Sharing of microlenses among pixels in image sensors

    Chandra Mouli

  • Method of fabricating an isolation structure on a semiconductor substrate

    Fernando Gonzalez;Chandra Mouli

  • Pixel and imager device having high-k dielectrics in isolation structures

    Chandra Mouli

  • Vertical ferroelectric field effect transistor constructions, constructions comprising a pair of vertical ferroelectric field effect transistors, vertical strings of ferroelectric field effect transistors, and vertical strings of laterally opposing pairs

    Karda Kamal M;Mouli Chandra;Sandhu Gurtej S

Frequent Co-Authors

Gurtej S. Sandhu
Gurtej S. Sandhu Micron (United States)
Fernando Gonzalez
Fernando Gonzalez Micron (United States)
Howard E. Rhodes
Howard E. Rhodes Micron (United States)
Muhammad A. Alam
Muhammad A. Alam Purdue University West Lafayette
Shriram Ramanathan
Shriram Ramanathan Rutgers, The State University of New Jersey
Nanshu Lu
Nanshu Lu The University of Texas at Austin
Kevin J. Chen
Kevin J. Chen Hong Kong University of Science and Technology
Robert Hull
Robert Hull Rensselaer Polytechnic Institute
Gaudenzio Meneghesso
Gaudenzio Meneghesso University of Padua
Dim-Lee Kwong
Dim-Lee Kwong National University of Singapore

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