World's Best Scientists 2026 revealed!

D-Index & Metrics

Electronics and Electrical Engineering

D-Index
97
Citations
34407
World Ranking
219
National Ranking
108

Materials Science

D-Index
97
Citations
33037
World Ranking
1220
National Ranking
398

Research.com Recognitions

  • 2016 - Fellow, National Academy of Inventors
  • 2013 - IEEE Fellow For contributions to high-performance advanced silicon and compound semiconductor transistor technologies

Overview

Suman Datta is affiliated with the Georgia Institute of Technology in the United States. Their primary research focus lies within the field of engineering, with a significant concentration on electrical and electronic engineering.

The scientist's work covers multiple subfields, including materials chemistry, artificial intelligence, electronic, optical and magnetic materials, as well as condensed matter physics. Their research topics predominantly involve semiconductor materials and devices, ferroelectric and negative capacitance devices, advanced memory and neural computing, advancements in semiconductor devices and circuit design, electronic and structural properties of oxides, ZnO doping and properties, and neural networks and reservoir computing.

Frequent coauthors in their publications include Shimeng Yu, Asif Islam Khan, Khandker Akif Aabrar, Abhishek Khanna, and Arijit Raychowdhury.

Datta has contributed extensively to various publication venues, including:

  • IEEE Transactions on Electron Devices
  • IEEE Electron Device Letters
  • arXiv (Cornell University)
  • 2021 IEEE International Electron Devices Meeting (IEDM)
  • IEEE Journal on Exploratory Solid-State Computational Devices and Circuits

Among recent papers authored or coauthored by Suman Datta are:

  • The future of ferroelectric field-effect transistor technology (2020) - Nature Electronics
  • Embedded Devices for Neuromorphic Time-Series Assessment (2022) - Maryland Shared Open Access Repository (USMAI Consortium)
  • Ultrathin ferroic HfO2-ZrO2 superlattice gate stack for advanced transistors (2022) - Nature
  • Roadmap on emerging hardware and technology for machine learning (2020) - Nanotechnology
  • An Ising Hamiltonian solver based on coupled stochastic phase-transition nano-oscillators (2021) - Nature Electronics

Suman Datta has been recognized by professional organizations, receiving awards such as the IEEE Fellow in 2013 for contributions to high-performance advanced silicon and compound semiconductor transistor technologies, and being named a Fellow of the National Academy of Inventors in 2016.

Best Publications

  • Benchmarking nanotechnology for high-performance and low-power logic transistor applications

    R. Chau;S. Datta;M. Doczy;B. Doyle

  • The future of ferroelectric field-effect transistor technology

    Asif Islam Khan;Ali Keshavarzi;Suman Datta

  • Two-dimensional gallium nitride realized via graphene encapsulation

    Zakaria Y. Al Balushi;Ke Wang;Ram Krishna Ghosh;Rafael A. Vilá

  • High-/spl kappa//metal-gate stack and its MOSFET characteristics

    R. Chau;S. Datta;M. Doczy;B. Doyle

  • TRI-GATE DEVICE AND MANUFACTURING METHOD

    Chau Robert;Doyle Brian;Kavalieros Jack;Barlage Douglas

  • High performance fully-depleted tri-gate CMOS transistors

    B.S. Doyle;S. Datta;M. Doczy;S. Hareland

  • The era of hyper-scaling in electronics

    Sayeef Salahuddin;Kai Ni;Suman Datta

  • Ferroelectric FET analog synapse for acceleration of deep neural network training

    Matthew Jerry;Pai-Yu Chen;Jianchi Zhang;Pankaj Sharma

  • Integrated nanoelectronics for the future

    Robert Chau;Brian Doyle;Suman Datta;Jack Kavalieros

  • Atomically thin resonant tunnel diodes built from synthetic van der Waals heterostructures

    Yu Chuan Lin;Ram Krishna Ghosh;Rafik Addou;Ning Lu

  • Critical Role of Interlayer in Hf 0.5 Zr 0.5 O 2 Ferroelectric FET Nonvolatile Memory Performance

    Kai Ni;Pankaj Sharma;Jianchi Zhang;Matthew Jerry

  • A steep-slope transistor based on abrupt electronic phase transition

    Nikhil Shukla;Arun V. Thathachary;Ashish Agrawal;Hanjong Paik

  • Tri-Gate fully-depleted CMOS transistors: fabrication, design and layout

    B. Doyle;B. Boyanov;S. Datta;M. Doczy

  • Ferroelectric ternary content-addressable memory for one-shot learning

    Kai Ni;Xunzhao Yin;Ann Franchesca Laguna;Siddharth Joshi

  • Block Contact Architectures for Nanoscale Channel Transistors

    Marko Radosavljevic;Amlan Majumdar;Brian S. Doyle;Jack Kavalieros

  • Tri-Gate Transistor Architecture with High-k Gate Dielectrics, Metal Gates and Strain Engineering

    J. Kavalieros;B. Doyle;S. Datta;G. Dewey

  • Floating-body dynamic random access memory and method of fabrication in tri-gate technology

    Stephen H. Tang;Ali Keshavarzi;Dinesh Somasekhar;Fabrice Paillet

  • Method for making a semiconductor device having a high-k gate dielectric layer and a metal gate electrode

    Justin K. Brask;Jack Kavalieros;Mark L. Doczy;Uday Shah

  • Tri-gate transistor device with stress incorporation layer and method of fabrication

    Scott A. Hareland;Robert S. Chau;Brian S. Doyle;Suman Datta

  • Nonplanar semiconductor device with partially or fully wrapped around gate electrode and methods of fabrication

    Scott A. Hareland;Robert S. Chau;Brian S. Doyle;Rafael Rios

Frequent Co-Authors

Robert S. Chau
Robert S. Chau Intel (United States)
Justin K. Brask
Justin K. Brask Intel (United States)
Brian S. Doyle
Brian S. Doyle Intel (United States)
Mark L. Doczy
Mark L. Doczy Intel (United States)
Sumeet Kumar Gupta
Sumeet Kumar Gupta Purdue University West Lafayette
Uday Shah
Uday Shah Intel (United States)
Arijit Raychowdhury
Arijit Raychowdhury Georgia Institute of Technology
Mantu K. Hudait
Mantu K. Hudait Virginia Tech
Marko Radosavljevic
Marko Radosavljevic Intel (United States)
Darrell G. Schlom
Darrell G. Schlom Cornell University

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