D-Index & Metrics Best Publications

D-Index & Metrics D-index (Discipline H-index) only includes papers and citation values for an examined discipline in contrast to General H-index which accounts for publications across all disciplines.

Discipline name D-index D-index (Discipline H-index) only includes papers and citation values for an examined discipline in contrast to General H-index which accounts for publications across all disciplines. Citations Publications World Ranking National Ranking
Materials Science D-index 77 Citations 19,847 363 World Ranking 1215 National Ranking 428
Electronics and Electrical Engineering D-index 87 Citations 25,869 647 World Ranking 176 National Ranking 102

Research.com Recognitions

Awards & Achievements

2016 - Fellow, National Academy of Inventors

2013 - IEEE Fellow For contributions to high-performance advanced silicon and compound semiconductor transistor technologies

Overview

What is he best known for?

The fields of study he is best known for:

  • Quantum mechanics
  • Transistor
  • Semiconductor

His main research concerns Optoelectronics, Transistor, Electrical engineering, Field-effect transistor and Gate dielectric. His Optoelectronics research includes elements of Layer, Metal gate, Substrate, Gate oxide and Electrode. His Transistor research integrates issues from CMOS, Communication channel and Silicon.

His work in Electrical engineering addresses issues such as Capacitance, which are connected to fields such as Ferroelectricity. He combines subjects such as Nanotechnology, Tunnel effect, Quantum tunnelling, Heterojunction and Logic gate with his study of Field-effect transistor. His Gate dielectric research is multidisciplinary, relying on both High-κ dielectric, Dielectric and Nanowire.

His most cited work include:

  • Benchmarking nanotechnology for high-performance and low-power logic transistor applications (592 citations)
  • Tri-gate devices and methods of fabrication (557 citations)
  • High performance fully-depleted tri-gate CMOS transistors (420 citations)

What are the main themes of his work throughout his whole career to date?

Suman Datta focuses on Optoelectronics, Transistor, Electrical engineering, Electronic engineering and Field-effect transistor. The concepts of his Optoelectronics study are interwoven with issues in Layer, Electrode, MOSFET, Gate dielectric and Gate oxide. The various areas that Suman Datta examines in his Transistor study include Silicon, Ferroelectricity, Logic gate, CMOS and Quantum tunnelling.

His Electrical engineering research incorporates themes from Capacitance and Low-power electronics. His Electronic engineering research is multidisciplinary, incorporating perspectives in NMOS logic and Efficient energy use. Suman Datta interconnects Nanotechnology, Heterojunction and Gallium arsenide in the investigation of issues within Field-effect transistor.

He most often published in these fields:

  • Optoelectronics (47.99%)
  • Transistor (36.79%)
  • Electrical engineering (27.76%)

What were the highlights of his more recent work (between 2016-2021)?

  • Transistor (36.79%)
  • Ferroelectricity (9.53%)
  • Optoelectronics (47.99%)

In recent papers he was focusing on the following fields of study:

His primary areas of study are Transistor, Ferroelectricity, Optoelectronics, Electronic engineering and Electrical engineering. The Transistor study combines topics in areas such as AND gate, CMOS, Logic gate and Capacitor. His Ferroelectricity study combines topics in areas such as Field-effect transistor, Polarization and Condensed matter physics.

His Optoelectronics study incorporates themes from Threshold voltage and Gallium nitride. While the research belongs to areas of Electronic engineering, Suman Datta spends his time largely on the problem of Artificial neural network, intersecting his research to questions surrounding Inference. His work focuses on many connections between Electrical engineering and other disciplines, such as Phase transition, that overlap with his field of interest in Ising model, Phase and Topology.

Between 2016 and 2021, his most popular works were:

  • Ferroelectric FET analog synapse for acceleration of deep neural network training (132 citations)
  • The era of hyper-scaling in electronics (94 citations)
  • Critical Role of Interlayer in Hf 0.5 Zr 0.5 O 2 Ferroelectric FET Nonvolatile Memory Performance (73 citations)

In his most recent research, the most cited papers focused on:

  • Quantum mechanics
  • Semiconductor
  • Transistor

His scientific interests lie mostly in Ferroelectricity, Optoelectronics, Condensed matter physics, Transistor and Electrical engineering. His work deals with themes such as Field-effect transistor, Polarization, Transistor model and Capacitor, which intersect with Ferroelectricity. His Optoelectronics study combines topics from a wide range of disciplines, such as Amplitude, Process and Equivalent oxide thickness.

His research investigates the connection with Condensed matter physics and areas like Electron which intersect with concerns in Delocalized electron, Scattering and Electron mobility. His Transistor research is multidisciplinary, incorporating elements of Indium tin oxide, Nanometre and Electronics. His study in the fields of Logic gate under the domain of Electrical engineering overlaps with other disciplines such as Design space.

This overview was generated by a machine learning system which analysed the scientist’s body of work. If you have any feedback, you can contact us here.

Best Publications

Benchmarking nanotechnology for high-performance and low-power logic transistor applications

R. Chau;S. Datta;M. Doczy;B. Doyle.
IEEE Transactions on Nanotechnology (2005)

852 Citations

Benchmarking nanotechnology for high-performance and low-power logic transistor applications

R. Chau;S. Datta;M. Doczy;B. Doyle.
IEEE Transactions on Nanotechnology (2005)

852 Citations

High-/spl kappa//metal-gate stack and its MOSFET characteristics

R. Chau;S. Datta;M. Doczy;B. Doyle.
IEEE Electron Device Letters (2004)

688 Citations

High-/spl kappa//metal-gate stack and its MOSFET characteristics

R. Chau;S. Datta;M. Doczy;B. Doyle.
IEEE Electron Device Letters (2004)

688 Citations

High performance fully-depleted tri-gate CMOS transistors

B.S. Doyle;S. Datta;M. Doczy;S. Hareland.
IEEE Electron Device Letters (2003)

652 Citations

High performance fully-depleted tri-gate CMOS transistors

B.S. Doyle;S. Datta;M. Doczy;S. Hareland.
IEEE Electron Device Letters (2003)

652 Citations

TRI-GATE DEVICE AND MANUFACTURING METHOD

Chau Robert;Doyle Brian;Kavalieros Jack;Barlage Douglas.
(2017)

560 Citations

Tri-gate devices and methods of fabrication

Robert S. Chau;Brian S. Doyle;Jack Kavalieros;Douglas Barlage.
(2003)

550 Citations

Two-dimensional gallium nitride realized via graphene encapsulation

Zakaria Y. Al Balushi;Ke Wang;Ram Krishna Ghosh;Rafael A. Vilá.
Nature Materials (2016)

533 Citations

Two-dimensional gallium nitride realized via graphene encapsulation

Zakaria Y. Al Balushi;Ke Wang;Ram Krishna Ghosh;Rafael A. Vilá.
Nature Materials (2016)

533 Citations

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