2016 - Fellow, National Academy of Inventors
2013 - IEEE Fellow For contributions to high-performance advanced silicon and compound semiconductor transistor technologies
His main research concerns Optoelectronics, Transistor, Electrical engineering, Field-effect transistor and Gate dielectric. His Optoelectronics research includes elements of Layer, Metal gate, Substrate, Gate oxide and Electrode. His Transistor research integrates issues from CMOS, Communication channel and Silicon.
His work in Electrical engineering addresses issues such as Capacitance, which are connected to fields such as Ferroelectricity. He combines subjects such as Nanotechnology, Tunnel effect, Quantum tunnelling, Heterojunction and Logic gate with his study of Field-effect transistor. His Gate dielectric research is multidisciplinary, relying on both High-κ dielectric, Dielectric and Nanowire.
Suman Datta focuses on Optoelectronics, Transistor, Electrical engineering, Electronic engineering and Field-effect transistor. The concepts of his Optoelectronics study are interwoven with issues in Layer, Electrode, MOSFET, Gate dielectric and Gate oxide. The various areas that Suman Datta examines in his Transistor study include Silicon, Ferroelectricity, Logic gate, CMOS and Quantum tunnelling.
His Electrical engineering research incorporates themes from Capacitance and Low-power electronics. His Electronic engineering research is multidisciplinary, incorporating perspectives in NMOS logic and Efficient energy use. Suman Datta interconnects Nanotechnology, Heterojunction and Gallium arsenide in the investigation of issues within Field-effect transistor.
His primary areas of study are Transistor, Ferroelectricity, Optoelectronics, Electronic engineering and Electrical engineering. The Transistor study combines topics in areas such as AND gate, CMOS, Logic gate and Capacitor. His Ferroelectricity study combines topics in areas such as Field-effect transistor, Polarization and Condensed matter physics.
His Optoelectronics study incorporates themes from Threshold voltage and Gallium nitride. While the research belongs to areas of Electronic engineering, Suman Datta spends his time largely on the problem of Artificial neural network, intersecting his research to questions surrounding Inference. His work focuses on many connections between Electrical engineering and other disciplines, such as Phase transition, that overlap with his field of interest in Ising model, Phase and Topology.
His scientific interests lie mostly in Ferroelectricity, Optoelectronics, Condensed matter physics, Transistor and Electrical engineering. His work deals with themes such as Field-effect transistor, Polarization, Transistor model and Capacitor, which intersect with Ferroelectricity. His Optoelectronics study combines topics from a wide range of disciplines, such as Amplitude, Process and Equivalent oxide thickness.
His research investigates the connection with Condensed matter physics and areas like Electron which intersect with concerns in Delocalized electron, Scattering and Electron mobility. His Transistor research is multidisciplinary, incorporating elements of Indium tin oxide, Nanometre and Electronics. His study in the fields of Logic gate under the domain of Electrical engineering overlaps with other disciplines such as Design space.
This overview was generated by a machine learning system which analysed the scientist’s body of work. If you have any feedback, you can contact us here.
Benchmarking nanotechnology for high-performance and low-power logic transistor applications
R. Chau;S. Datta;M. Doczy;B. Doyle.
IEEE Transactions on Nanotechnology (2005)
Benchmarking nanotechnology for high-performance and low-power logic transistor applications
R. Chau;S. Datta;M. Doczy;B. Doyle.
IEEE Transactions on Nanotechnology (2005)
High-/spl kappa//metal-gate stack and its MOSFET characteristics
R. Chau;S. Datta;M. Doczy;B. Doyle.
IEEE Electron Device Letters (2004)
High-/spl kappa//metal-gate stack and its MOSFET characteristics
R. Chau;S. Datta;M. Doczy;B. Doyle.
IEEE Electron Device Letters (2004)
High performance fully-depleted tri-gate CMOS transistors
B.S. Doyle;S. Datta;M. Doczy;S. Hareland.
IEEE Electron Device Letters (2003)
High performance fully-depleted tri-gate CMOS transistors
B.S. Doyle;S. Datta;M. Doczy;S. Hareland.
IEEE Electron Device Letters (2003)
TRI-GATE DEVICE AND MANUFACTURING METHOD
Chau Robert;Doyle Brian;Kavalieros Jack;Barlage Douglas.
(2017)
Tri-gate devices and methods of fabrication
Robert S. Chau;Brian S. Doyle;Jack Kavalieros;Douglas Barlage.
(2003)
Two-dimensional gallium nitride realized via graphene encapsulation
Zakaria Y. Al Balushi;Ke Wang;Ram Krishna Ghosh;Rafael A. Vilá.
Nature Materials (2016)
Two-dimensional gallium nitride realized via graphene encapsulation
Zakaria Y. Al Balushi;Ke Wang;Ram Krishna Ghosh;Rafael A. Vilá.
Nature Materials (2016)
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