World's Best Scientists 2026 revealed!

D-Index & Metrics

Electronics and Electrical Engineering

D-Index
97
Citations
34407
World Ranking
219
National Ranking
109

Materials Science

D-Index
97
Citations
33037
World Ranking
1220
National Ranking
397

Suman Datta publication distribution in Electronics and Electrical Engineering in 2026

The chart shows the distribution of publications by all Research.com ranked scientists in the field of Electronics and Electrical Engineering in 2026. The highlighted bar marks where Suman Datta sits on this spectrum.

34–53 publications: 24 scientists 54–73 publications: 52 scientists 74–93 publications: 114 scientists 94–113 publications: 203 scientists 114–133 publications: 269 scientists 134–153 publications: 355 scientists 154–173 publications: 403 scientists 174–193 publications: 445 scientists 194–213 publications: 430 scientists 214–233 publications: 431 scientists 234–253 publications: 399 scientists 254–273 publications: 366 scientists 274–293 publications: 335 scientists 294–313 publications: 300 scientists 314–333 publications: 276 scientists 334–353 publications: 250 scientists 354–373 publications: 214 scientists 374–393 publications: 187 scientists 394–413 publications: 152 scientists 414–433 publications: 169 scientists 434–453 publications: 147 scientists 454–473 publications: 111 scientists 474–493 publications: 117 scientists 494–513 publications: 103 scientists 514–533 publications: 99 scientists 534–553 publications: 92 scientists 554–573 publications: 75 scientists 574–593 publications: 58 scientists 594–613 publications: 69 scientists 614–633 publications: 50 scientists 634–653 publications: 62 scientists 654–673 publications: 54 scientists 674–693 publications: 44 scientists 694–713 publications: 37 scientists 714–733 publications: 28 scientists 734–753 publications: 26 scientists 754–773 publications: 26 scientists 774–793 publications: 19 scientists 794–813 publications: 23 scientists 814–833 publications: 20 scientists 834–853 publications: 16 scientists 854–873 publications: 20 scientists 874–893 publications: 11 scientists 894–913 publications: 11 scientists 914–933 publications: 16 scientists 934–953 publications: 13 scientists 954–973 publications: 10 scientists 974–993 publications: 11 scientists 994–1,013 publications: 9 scientists 1,014–1,033 publications: 9 scientists 1,034–1,053 publications: 10 scientists 1,054–1,064 publications: 6 scientists 1,065+ publications: 99 scientists
34 publications 1,065+

This scientist: 678 publications — 93rd percentile

93% of scientists in this discipline score the same or lower.

The last bar groups every scientist with 1,065 publications or more.

Suman Datta D-index placement in Electronics and Electrical Engineering in 2026

The chart shows the D-index (discipline H-index) distribution of Electronics and Electrical Engineering scientists ranked by Research.com in 2026. The highlighted bar marks where Suman Datta sits on this spectrum.

30 D-Index: 178 scientists 31 D-Index: 257 scientists 32 D-Index: 263 scientists 33 D-Index: 262 scientists 34 D-Index: 244 scientists 35 D-Index: 236 scientists 36 D-Index: 211 scientists 37 D-Index: 220 scientists 38 D-Index: 214 scientists 39 D-Index: 214 scientists 40 D-Index: 205 scientists 41 D-Index: 187 scientists 42 D-Index: 194 scientists 43 D-Index: 201 scientists 44 D-Index: 155 scientists 45 D-Index: 189 scientists 46 D-Index: 148 scientists 47 D-Index: 160 scientists 48 D-Index: 134 scientists 49 D-Index: 130 scientists 50 D-Index: 141 scientists 51 D-Index: 156 scientists 52 D-Index: 108 scientists 53 D-Index: 130 scientists 54 D-Index: 112 scientists 55 D-Index: 97 scientists 56 D-Index: 111 scientists 57 D-Index: 102 scientists 58 D-Index: 108 scientists 59 D-Index: 120 scientists 60 D-Index: 103 scientists 61 D-Index: 93 scientists 62 D-Index: 92 scientists 63 D-Index: 74 scientists 64 D-Index: 77 scientists 65 D-Index: 73 scientists 66 D-Index: 64 scientists 67 D-Index: 69 scientists 68 D-Index: 60 scientists 69 D-Index: 39 scientists 70 D-Index: 57 scientists 71 D-Index: 59 scientists 72 D-Index: 46 scientists 73 D-Index: 49 scientists 74 D-Index: 38 scientists 75 D-Index: 35 scientists 76 D-Index: 32 scientists 77 D-Index: 35 scientists 78 D-Index: 31 scientists 79 D-Index: 22 scientists 80 D-Index: 34 scientists 81 D-Index: 31 scientists 82 D-Index: 34 scientists 83 D-Index: 23 scientists 84 D-Index: 18 scientists 85 D-Index: 30 scientists 86 D-Index: 19 scientists 87 D-Index: 19 scientists 88 D-Index: 20 scientists 89 D-Index: 8 scientists 90 D-Index: 17 scientists 91 D-Index: 7 scientists 92 D-Index: 14 scientists 93 D-Index: 9 scientists 94 D-Index: 15 scientists 95 D-Index: 10 scientists 96 D-Index: 12 scientists 97 D-Index: 10 scientists 98 D-Index: 10 scientists 99 D-Index: 12 scientists 100 D-Index: 16 scientists 101 D-Index: 5 scientists 102 D-Index: 7 scientists 103 D-Index: 7 scientists 104 D-Index: 8 scientists 105 D-Index: 9 scientists 106 D-Index: 13 scientists 107 D-Index: 4 scientists 108 D-Index: 5 scientists 109 D-Index: 10 scientists 110 D-Index: 8 scientists 111+ D-Index: 96 scientists
30 D-Index 111+

This scientist: 97 D-Index — 97th percentile

97% of scientists in this discipline score the same or lower.

The last bar groups every scientist with 111 D-Index or more.

Research.com Recognitions

  • 2016 - Fellow, National Academy of Inventors
  • 2013 - IEEE Fellow For contributions to high-performance advanced silicon and compound semiconductor transistor technologies

Overview

Suman Datta is affiliated with the Georgia Institute of Technology in the United States. Their primary research focus lies within the field of engineering, with a significant concentration on electrical and electronic engineering.

The scientist's work covers multiple subfields, including materials chemistry, artificial intelligence, electronic, optical and magnetic materials, as well as condensed matter physics. Their research topics predominantly involve semiconductor materials and devices, ferroelectric and negative capacitance devices, advanced memory and neural computing, advancements in semiconductor devices and circuit design, electronic and structural properties of oxides, ZnO doping and properties, and neural networks and reservoir computing.

Frequent coauthors in their publications include Shimeng Yu, Asif Islam Khan, Khandker Akif Aabrar, Abhishek Khanna, and Arijit Raychowdhury.

Datta has contributed extensively to various publication venues, including:

  • IEEE Transactions on Electron Devices
  • IEEE Electron Device Letters
  • arXiv (Cornell University)
  • 2021 IEEE International Electron Devices Meeting (IEDM)
  • IEEE Journal on Exploratory Solid-State Computational Devices and Circuits

Among recent papers authored or coauthored by Suman Datta are:

  • The future of ferroelectric field-effect transistor technology (2020) - Nature Electronics
  • Embedded Devices for Neuromorphic Time-Series Assessment (2022) - Maryland Shared Open Access Repository (USMAI Consortium)
  • Ultrathin ferroic HfO2-ZrO2 superlattice gate stack for advanced transistors (2022) - Nature
  • Roadmap on emerging hardware and technology for machine learning (2020) - Nanotechnology
  • An Ising Hamiltonian solver based on coupled stochastic phase-transition nano-oscillators (2021) - Nature Electronics

Suman Datta has been recognized by professional organizations, receiving awards such as the IEEE Fellow in 2013 for contributions to high-performance advanced silicon and compound semiconductor transistor technologies, and being named a Fellow of the National Academy of Inventors in 2016.

Best Publications

  • Benchmarking nanotechnology for high-performance and low-power logic transistor applications

    R. Chau;S. Datta;M. Doczy;B. Doyle

  • The future of ferroelectric field-effect transistor technology

    Asif Islam Khan;Ali Keshavarzi;Suman Datta

  • Two-dimensional gallium nitride realized via graphene encapsulation

    Zakaria Y. Al Balushi;Ke Wang;Ram Krishna Ghosh;Rafael A. Vilá

  • High-/spl kappa//metal-gate stack and its MOSFET characteristics

    R. Chau;S. Datta;M. Doczy;B. Doyle

  • TRI-GATE DEVICE AND MANUFACTURING METHOD

    Chau Robert;Doyle Brian;Kavalieros Jack;Barlage Douglas

  • High performance fully-depleted tri-gate CMOS transistors

    B.S. Doyle;S. Datta;M. Doczy;S. Hareland

  • The era of hyper-scaling in electronics

    Sayeef Salahuddin;Kai Ni;Suman Datta

  • Ferroelectric FET analog synapse for acceleration of deep neural network training

    Matthew Jerry;Pai-Yu Chen;Jianchi Zhang;Pankaj Sharma

  • Integrated nanoelectronics for the future

    Robert Chau;Brian Doyle;Suman Datta;Jack Kavalieros

  • Atomically thin resonant tunnel diodes built from synthetic van der Waals heterostructures

    Yu Chuan Lin;Ram Krishna Ghosh;Rafik Addou;Ning Lu

  • Critical Role of Interlayer in Hf 0.5 Zr 0.5 O 2 Ferroelectric FET Nonvolatile Memory Performance

    Kai Ni;Pankaj Sharma;Jianchi Zhang;Matthew Jerry

  • A steep-slope transistor based on abrupt electronic phase transition

    Nikhil Shukla;Arun V. Thathachary;Ashish Agrawal;Hanjong Paik

  • Tri-Gate fully-depleted CMOS transistors: fabrication, design and layout

    B. Doyle;B. Boyanov;S. Datta;M. Doczy

  • Ferroelectric ternary content-addressable memory for one-shot learning

    Kai Ni;Xunzhao Yin;Ann Franchesca Laguna;Siddharth Joshi

  • Block Contact Architectures for Nanoscale Channel Transistors

    Marko Radosavljevic;Amlan Majumdar;Brian S. Doyle;Jack Kavalieros

  • Tri-Gate Transistor Architecture with High-k Gate Dielectrics, Metal Gates and Strain Engineering

    J. Kavalieros;B. Doyle;S. Datta;G. Dewey

  • Floating-body dynamic random access memory and method of fabrication in tri-gate technology

    Stephen H. Tang;Ali Keshavarzi;Dinesh Somasekhar;Fabrice Paillet

  • Method for making a semiconductor device having a high-k gate dielectric layer and a metal gate electrode

    Justin K. Brask;Jack Kavalieros;Mark L. Doczy;Uday Shah

  • Tri-gate transistor device with stress incorporation layer and method of fabrication

    Scott A. Hareland;Robert S. Chau;Brian S. Doyle;Suman Datta

  • Nonplanar semiconductor device with partially or fully wrapped around gate electrode and methods of fabrication

    Scott A. Hareland;Robert S. Chau;Brian S. Doyle;Rafael Rios

Frequent Co-Authors

Robert S. Chau
Robert S. Chau Intel (United States)
Justin K. Brask
Justin K. Brask Intel (United States)
Brian S. Doyle
Brian S. Doyle Intel (United States)
Mark L. Doczy
Mark L. Doczy Intel (United States)
Sumeet Kumar Gupta
Sumeet Kumar Gupta Purdue University West Lafayette
Uday Shah
Uday Shah Intel (United States)
Arijit Raychowdhury
Arijit Raychowdhury Georgia Institute of Technology
Mantu K. Hudait
Mantu K. Hudait Virginia Tech
Marko Radosavljevic
Marko Radosavljevic Intel (United States)
Darrell G. Schlom
Darrell G. Schlom Cornell University

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