Bruce B. Doris

What is he best known for?

The fields of study he is best known for:

• Semiconductor
• Optoelectronics
• Transistor

His primary scientific interests are in Optoelectronics, Electrical engineering, CMOS, Layer and Silicon on insulator. His Optoelectronics research is multidisciplinary, incorporating perspectives in Field-effect transistor, Substrate, Gate oxide and Semiconductor device. His work carried out in the field of Substrate brings together such families of science as Ultimate tensile strength, Stress, Etching, Electronic engineering and Nitride.

The concepts of his CMOS study are interwoven with issues in Electronic circuit, Nanotechnology, NMOS logic, Second source and PMOS logic. Undercut is closely connected to Communication channel in his research, which is encompassed under the umbrella topic of Silicon on insulator. His Gate dielectric research is multidisciplinary, incorporating elements of High-κ dielectric and Metal gate.

His most cited work include:

• Silicon device scaling to the sub-10-nm regime. (453 citations)
• Smooth and vertical semiconductor fin structure (235 citations)
• Hybrid planar and FinFET CMOS devices (215 citations)

What are the main themes of his work throughout his whole career to date?

Bruce B. Doris spends much of his time researching Optoelectronics, Layer, Electrical engineering, Electronic engineering and Substrate. His Optoelectronics research includes elements of Semiconductor device and Gate oxide. In Gate oxide, Bruce B. Doris works on issues like Gate dielectric, which are connected to High-κ dielectric.

His study in the field of Etching and Substrate is also linked to topics like Stack. Bruce B. Doris focuses mostly in the field of Electronic engineering, narrowing it down to topics relating to Fin and, in certain cases, Structural engineering. His research in Substrate intersects with topics in Trench and Stress.

He most often published in these fields:

• Optoelectronics (80.33%)
• Layer (35.37%)
• Electrical engineering (27.11%)

What were the highlights of his more recent work (between 2014-2021)?

• Optoelectronics (80.33%)
• Layer (35.37%)
• Electronic engineering (25.62%)

In recent papers he was focusing on the following fields of study:

Bruce B. Doris focuses on Optoelectronics, Layer, Electronic engineering, Substrate and Semiconductor device. His work in Optoelectronics covers topics such as Epitaxy which are related to areas like Doping. His studies deal with areas such as Structural engineering and Dielectric as well as Layer.

His research on Electronic engineering also deals with topics like

• Fin together with Communication channel,
• Semiconductor materials which connect with Semiconductor structure. The various areas that Bruce B. Doris examines in his Substrate study include Stress and Dopant. His studies in Semiconductor device integrate themes in fields like Oxide, Nanosheet, Substrate, MOSFET and Gate stack.

Between 2014 and 2021, his most popular works were:

• Nanosheet MOSFET with full-height air-gap spacer (86 citations)
• Finfet structures having silicon germanium and silicon fins (71 citations)
• Atomic layer deposition sealing integration for nanosheet complementary metal oxide semiconductor with replacement spacer (47 citations)

In his most recent research, the most cited papers focused on:

• Semiconductor
• Transistor
• Electrical engineering

His primary areas of study are Optoelectronics, Electronic engineering, Layer, Semiconductor device and Substrate. His study in Optoelectronics is interdisciplinary in nature, drawing from both Electrical engineering, Fin and Epitaxy. His Electronic engineering research includes elements of Semiconductor structure, Substrate, Dielectric layer, Silicon-germanium and Fin.

Bruce B. Doris focuses mostly in the field of Layer, narrowing it down to matters related to Oxide and, in some cases, Diffusion capacitance. His Semiconductor device research includes themes of Nanosheet, Insulator and MOSFET. His Substrate research incorporates elements of Etching and Wafer.