D-Index & Metrics Best Publications

D-Index & Metrics D-index (Discipline H-index) only includes papers and citation values for an examined discipline in contrast to General H-index which accounts for publications across all disciplines.

Discipline name D-index D-index (Discipline H-index) only includes papers and citation values for an examined discipline in contrast to General H-index which accounts for publications across all disciplines. Citations Publications World Ranking National Ranking
Electronics and Electrical Engineering D-index 31 Citations 5,188 499 World Ranking 4560 National Ranking 1701

Overview

What is he best known for?

The fields of study he is best known for:

  • Semiconductor
  • Electrical engineering
  • Optoelectronics

His primary scientific interests are in Optoelectronics, Layer, Semiconductor device, Electronic engineering and Substrate. The various areas that Ruilong Xie examines in his Optoelectronics study include Fin, Transistor, Gate oxide and Electrical engineering. Ruilong Xie works mostly in the field of Layer, limiting it down to topics relating to Semiconductor materials and, in certain cases, Isolation.

In his study, which falls under the umbrella issue of Semiconductor device, Insulation layer and Mechanical engineering is strongly linked to Structural engineering. His Electronic engineering study also includes fields such as

  • Etching, which have a strong connection to Fin,
  • Integrated circuit together with Parasitic capacitance. His work investigates the relationship between Substrate and topics such as Etching that intersect with problems in Engineering drawing and Conductive materials.

His most cited work include:

  • Methods of forming a semiconductor device with low-k spacers and the resulting device (159 citations)
  • Integrated circuits and methods for fabricating integrated circuits with reduced parasitic capacitance (140 citations)
  • Silicide protection during contact metallization and resulting semiconductor structures (127 citations)

What are the main themes of his work throughout his whole career to date?

His main research concerns Optoelectronics, Layer, Transistor, Semiconductor device and Dielectric. His Optoelectronics research integrates issues from Fin, Substrate, Electronic engineering and Substrate. His study in Layer is interdisciplinary in nature, drawing from both Electrical conductor and Fin.

His work carried out in the field of Transistor brings together such families of science as Nanosheet, Epitaxy and Integrated circuit. The Semiconductor device study combines topics in areas such as Semiconductor materials, Structural engineering, Dielectric layer and Etching. His Gate oxide study results in a more complete grasp of Electrical engineering.

He most often published in these fields:

  • Optoelectronics (86.98%)
  • Layer (44.12%)
  • Transistor (34.00%)

What were the highlights of his more recent work (between 2019-2021)?

  • Optoelectronics (86.98%)
  • Transistor (34.00%)
  • Layer (44.12%)

In recent papers he was focusing on the following fields of study:

Ruilong Xie spends much of his time researching Optoelectronics, Transistor, Layer, Dielectric and Semiconductor. A large part of his Optoelectronics studies is devoted to Integrated circuit. His Transistor research includes themes of Fin, Pillar, Substrate and Epitaxy.

Many of his studies on Layer involve topics that are commonly interrelated, such as Electrical conductor. His Dielectric study combines topics in areas such as Parasitic capacitance, Trench and Composite material. His research investigates the link between Semiconductor and topics such as Insulator that cross with problems in Perpendicular.

Between 2019 and 2021, his most popular works were:

  • Nanosheet transistor with dual inner airgap spacers (4 citations)
  • Wrap-around contact surrounding epitaxial regions of integrated circuit structures and method of forming same (3 citations)
  • Forming self-aligned gate and source/drain contacts using sacrificial gate cap spacer and resulting devices (3 citations)

In his most recent research, the most cited papers focused on:

  • Semiconductor
  • Transistor
  • Electrical engineering

Ruilong Xie mainly focuses on Optoelectronics, Layer, Transistor, Semiconductor device and Nanosheet. His Optoelectronics research incorporates themes from Field-effect transistor, Trench and Self-aligned gate. Metal gate, Semiconductor structure and Substrate are the primary areas of interest in his Layer study.

His Transistor study integrates concerns from other disciplines, such as AND gate and Air gap. His study looks at the relationship between AND gate and fields such as Integrated circuit, as well as how they intersect with chemical problems. The study incorporates disciplines such as Electrical conductor, Fin, Etching and Base in addition to Semiconductor device.

This overview was generated by a machine learning system which analysed the scientist’s body of work. If you have any feedback, you can contact us here.

Best Publications

Semiconductor device with low-K spacers

Xiuyu Cai;Ruilong Xie;Xunyuan Zhang.
(2015)

257 Citations

Integrated circuits and methods for fabricating integrated circuits with reduced parasitic capacitance

Ruilong Xie;Xiuyu Cai;Xunyuan Zhang.
(2012)

216 Citations

Silicide protection during contact metallization and resulting semiconductor structures

Vimal K. Kamineni;Ruilong Xie;Robert Miller.
(2014)

173 Citations

Multi-channel gate-all-around FET

Qing Liu;Ruilong Xie;Chun-Chen Yeh;Xiuyu Cai.
(2014)

117 Citations

A 7nm FinFET technology featuring EUV patterning and dual strained high mobility channels

R. Xie;P. Montanini;K. Akarvardar;N. Tripathi.
international electron devices meeting (2016)

114 Citations

Integrated circuits including finfet devices and methods for fabricating the same

Ruilong Xie;Xiuyu Cai;Ali Khakifirooz;Kangguo Cheng.
(2014)

114 Citations

Finfet semiconductor devices with improved source/drain resistance

Ruilong Xie;Mark Raymond;Robert Miller.
(2015)

107 Citations

High-k gate stack on germanium substrate with fluorine incorporation

Ruilong Xie;Mingbin Yu;Mei Ying Lai;Lap Chan.
Applied Physics Letters (2008)

97 Citations

Effects of Sulfur Passivation on Germanium MOS Capacitors With HfON Gate Dielectric

Ruilong Xie;Chunxiang Zhu.
IEEE Electron Device Letters (2007)

97 Citations

A 10nm platform technology for low power and high performance application featuring FINFET devices with multi workfunction gate stack on bulk and SOI

K. I. Seo;B. Haran;D. Gupta;D. Guo.
symposium on vlsi technology (2014)

89 Citations

If you think any of the details on this page are incorrect, let us know.

Contact us

Best Scientists Citing Ruilong Xie

Kangguo Cheng

Kangguo Cheng

IBM (United States)

Publications: 187

Alexander Reznicek

Alexander Reznicek

IBM (United States)

Publications: 67

Nitin K. Ingle

Nitin K. Ingle

Applied Materials (United States)

Publications: 45

Dmitry Lubomirsky

Dmitry Lubomirsky

Applied Materials (United States)

Publications: 30

Ali Khakifirooz

Ali Khakifirooz

Intel (United States)

Publications: 23

Bruce B. Doris

Bruce B. Doris

IBM (United States)

Publications: 19

Anand S. Murthy

Anand S. Murthy

Intel (United States)

Publications: 13

Oleg Gluschenkov

Oleg Gluschenkov

IBM (United States)

Publications: 12

J. Kwo

J. Kwo

National Tsing Hua University

Publications: 11

Rui Zhang

Rui Zhang

National University of Singapore

Publications: 11

Mitsuru Takenaka

Mitsuru Takenaka

University of Tokyo

Publications: 10

Shankar Venkataraman

Shankar Venkataraman

Applied Materials (United States)

Publications: 10

Jack C. Lee

Jack C. Lee

The University of Texas at Austin

Publications: 10

Minghwei Hong

Minghwei Hong

National Taiwan University

Publications: 10

Michael A. Guillorn

Michael A. Guillorn

IBM (United States)

Publications: 10

Yee-Chia Yeo

Yee-Chia Yeo

National University of Singapore

Publications: 9

Trending Scientists

Hua Liang

Hua Liang

George Washington University

Er-Wei Bai

Er-Wei Bai

University of Iowa

Víctor Yepes

Víctor Yepes

Universitat Politècnica de València

Saeed I. Khan

Saeed I. Khan

University of California, Los Angeles

Christian V. Stevens

Christian V. Stevens

Ghent University

Myunghyun Paik Suh

Myunghyun Paik Suh

Seoul National University

John D. York

John D. York

Vanderbilt University

Michael J. Taylor

Michael J. Taylor

Utah State University

Douglas A. Stow

Douglas A. Stow

San Diego State University

Grover J. Whitehurst

Grover J. Whitehurst

Stony Brook University

Cheryl L. Holt

Cheryl L. Holt

University of Maryland, College Park

Piercarlo Sarzi-Puttini

Piercarlo Sarzi-Puttini

University of Milan

Philip A. Kern

Philip A. Kern

University of Kentucky

Stefan G. Hubscher

Stefan G. Hubscher

University of Birmingham

Reidar Grénman

Reidar Grénman

Turku University Hospital

Michaela Trippl

Michaela Trippl

University of Vienna

Something went wrong. Please try again later.