World's Best Scientists 2026 revealed!

D-Index & Metrics

Electronics and Electrical Engineering

D-Index
32
Citations
5546
World Ranking
6222
National Ranking
2055

Overview

Ruilong Xie is affiliated with IBM in the United States and has a body of research spanning several fields within engineering and biological sciences. Their scientific work covers multiple subfields including biomedical engineering, plant science, electrical and electronic engineering, as well as cellular and molecular neuroscience and cognitive neuroscience.

The core topics in Xie's research include advanced sensor and energy harvesting materials, neuroscience and neural engineering, tactile and sensory interactions, plant disease resistance and genetics, plant-microbe interactions and immunity, conducting polymers and applications, and semiconductor materials and devices.

Xie has contributed to a series of publications over recent years. Notable papers include:

  • Vertical-Transport Nanosheet Technology for CMOS Scaling beyond Lateral-Transport Devices, 2021, 2021 IEEE International Electron Devices Meeting (IEDM)
  • Scalable Fabrication of Uniform Fast-Response Humidity Field Sensing Array for Respiration Recognition and Contactless Human-Machine Interaction, 2025, Advanced Functional Materials
  • Advancements in Flexible Electronics Fabrication: Film Formation, Patterning, and Interface Optimization for Cutting-Edge Healthcare Monitoring Devices, 2024, ACS Applied Materials & Interfaces
  • A head-to-head NLR gene pair from wild emmer confers stripe rust resistance in wheat, 2025, Nature Genetics
  • Molecular Chain Interpenetration-Enabled High Interfacial Compatibility of Ionic and Electronic Conductors for Stretchable Ionic Devices, 2025, Advanced Materials

Frequent co-authors who have collaborated with Xie include Fengwei Huo, Kai Tao, Jin Wu, Yibing Luo, and Yifei Sun.

Xie's research has been featured in journals and conference proceedings such as ACS Applied Materials & Interfaces, Advanced Functional Materials, the IEEE International Electron Devices Meeting, Nature Genetics, and Advanced Materials.

The scientist's work reflects interdisciplinary methods and applications, especially prominent in the integration of materials science with electronics and biological systems. The emphasis on flexible electronics, sensor arrays, and plant genetics illustrates a diverse research portfolio aimed at both technological innovation and biological understanding.

Best Publications

  • Semiconductor device with low-K spacers

    Xiuyu Cai;Ruilong Xie;Xunyuan Zhang

  • Integrated circuits and methods for fabricating integrated circuits with reduced parasitic capacitance

    Ruilong Xie;Xiuyu Cai;Xunyuan Zhang

  • Silicide protection during contact metallization and resulting semiconductor structures

    Vimal K. Kamineni;Ruilong Xie;Robert Miller

  • A 7nm FinFET technology featuring EUV patterning and dual strained high mobility channels

    R. Xie;P. Montanini;K. Akarvardar;N. Tripathi

  • Scaling Challenges for Advanced CMOS Devices

    Ajey P. Jacob;Ruilong Xie;Min Gyu Sung;Lars Liebmann

  • Directed self-assembly of block copolymers for 7 nanometre FinFET technology and beyond

    Chi-Chun Liu;Elliott Franke;Yann Mignot;Ruilong Xie

  • Multi-channel gate-all-around FET

    Qing Liu;Ruilong Xie;Chun-Chen Yeh;Xiuyu Cai

  • Integrated circuits including finfet devices and methods for fabricating the same

    Ruilong Xie;Xiuyu Cai;Ali Khakifirooz;Kangguo Cheng

  • Finfet semiconductor devices with improved source/drain resistance

    Ruilong Xie;Mark Raymond;Robert Miller

  • A 10nm platform technology for low power and high performance application featuring FINFET devices with multi workfunction gate stack on bulk and SOI

    K. I. Seo;B. Haran;D. Gupta;D. Guo

  • Effects of Sulfur Passivation on Germanium MOS Capacitors With HfON Gate Dielectric

    Ruilong Xie;Chunxiang Zhu

  • High-k gate stack on germanium substrate with fluorine incorporation

    Ruilong Xie;Mingbin Yu;Mei Ying Lai;Lap Chan

  • Full Bottom Dielectric Isolation to Enable Stacked Nanosheet Transistor for Low Power and High Performance Applications

    J. Zhang;S. Pancharatnam;C. Adams;H. Wu

  • Methods of forming semiconductor device with self-aligned contact elements and the resulting devices

    Xiuyu Cai;Ruilong Xie;John A. Iacoponi

  • Methods of forming contact structures on finfet semiconductor devices and the resulting devices

    Ruilong Xie;Ryan Ryoung-Han Kim;William J. Taylor

  • Effects of fluorine incorporation and forming gas annealing on high-k gated germanium metal-oxide-semiconductor with GeO2 surface passivation

    Ruilong Xie;Wei He;Mingbin Yu;Chunxiang Zhu

  • Defect-free strain relaxed buffer layer

    Pierre Morin;Kangguo Cheng;Jody Fronheiser;Xiuyu Cai

  • Methods of forming diffusion breaks on integrated circuit products comprised of FinFET devices and the resulting products

    Ruilong Xie;Min Gyu Sung;Ryan Ryoung-Han Kim;Kwan-Yong Lim

  • Formation of the dielectric cap layer for a replacement gate structure

    Ruilong Xie;Balasubramanian Pranatharthi Haran;David V. Horak;Su Chen Fan

  • Interface-Engineered High-Mobility High- $k$ /Ge pMOSFETs With 1-nm Equivalent Oxide Thickness

    Ruilong Xie;Thanh Hoa Phung;Wei He;Mingbin Yu

  • Integrated circuit and method for fabricating the same having a replacement gate structure

    Ruilong Xie;Pranatharthi Haran Balasubramanian

Frequent Co-Authors

Kangguo Cheng
Kangguo Cheng IBM (United States)
Ali Khakifirooz
Ali Khakifirooz Intel (United States)
Bipul C. Paul
Bipul C. Paul GlobalFoundries (United States)
Chunxiang Zhu
Chunxiang Zhu National University of Singapore
Terence B. Hook
Terence B. Hook IBM (United States)
Vamsi K. Paruchuri
Vamsi K. Paruchuri IBM (United States)
Alexander Reznicek
Alexander Reznicek IBM (United States)
Oleg Gluschenkov
Oleg Gluschenkov IBM (United States)
Sukant K. Tripathy
Sukant K. Tripathy University of Massachusetts Lowell
Matthew E. Colburn
Matthew E. Colburn Facebook (United States)

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