World's Best Scientists 2026 revealed!

D-Index & Metrics

Electronics and Electrical Engineering

D-Index
32
Citations
5546
World Ranking
6221
National Ranking
2056

Ruilong Xie publication distribution in Electronics and Electrical Engineering in 2026

The chart shows the distribution of publications by all Research.com ranked scientists in the field of Electronics and Electrical Engineering in 2026. The highlighted bar marks where Ruilong Xie sits on this spectrum.

34–53 publications: 24 scientists 54–73 publications: 52 scientists 74–93 publications: 114 scientists 94–113 publications: 203 scientists 114–133 publications: 269 scientists 134–153 publications: 355 scientists 154–173 publications: 403 scientists 174–193 publications: 445 scientists 194–213 publications: 430 scientists 214–233 publications: 431 scientists 234–253 publications: 399 scientists 254–273 publications: 366 scientists 274–293 publications: 335 scientists 294–313 publications: 300 scientists 314–333 publications: 276 scientists 334–353 publications: 250 scientists 354–373 publications: 214 scientists 374–393 publications: 187 scientists 394–413 publications: 152 scientists 414–433 publications: 169 scientists 434–453 publications: 147 scientists 454–473 publications: 111 scientists 474–493 publications: 117 scientists 494–513 publications: 103 scientists 514–533 publications: 99 scientists 534–553 publications: 92 scientists 554–573 publications: 75 scientists 574–593 publications: 58 scientists 594–613 publications: 69 scientists 614–633 publications: 50 scientists 634–653 publications: 62 scientists 654–673 publications: 54 scientists 674–693 publications: 44 scientists 694–713 publications: 37 scientists 714–733 publications: 28 scientists 734–753 publications: 26 scientists 754–773 publications: 26 scientists 774–793 publications: 19 scientists 794–813 publications: 23 scientists 814–833 publications: 20 scientists 834–853 publications: 16 scientists 854–873 publications: 20 scientists 874–893 publications: 11 scientists 894–913 publications: 11 scientists 914–933 publications: 16 scientists 934–953 publications: 13 scientists 954–973 publications: 10 scientists 974–993 publications: 11 scientists 994–1,013 publications: 9 scientists 1,014–1,033 publications: 9 scientists 1,034–1,053 publications: 10 scientists 1,054–1,064 publications: 6 scientists 1,065+ publications: 99 scientists
34 publications 1,065+

This scientist: 506 publications — 85th percentile

85% of scientists in this discipline score the same or lower.

The last bar groups every scientist with 1,065 publications or more.

Ruilong Xie D-index placement in Electronics and Electrical Engineering in 2026

The chart shows the D-index (discipline H-index) distribution of Electronics and Electrical Engineering scientists ranked by Research.com in 2026. The highlighted bar marks where Ruilong Xie sits on this spectrum.

30 D-Index: 178 scientists 31 D-Index: 257 scientists 32 D-Index: 263 scientists 33 D-Index: 262 scientists 34 D-Index: 244 scientists 35 D-Index: 236 scientists 36 D-Index: 211 scientists 37 D-Index: 220 scientists 38 D-Index: 214 scientists 39 D-Index: 214 scientists 40 D-Index: 205 scientists 41 D-Index: 187 scientists 42 D-Index: 194 scientists 43 D-Index: 201 scientists 44 D-Index: 155 scientists 45 D-Index: 189 scientists 46 D-Index: 148 scientists 47 D-Index: 160 scientists 48 D-Index: 134 scientists 49 D-Index: 130 scientists 50 D-Index: 141 scientists 51 D-Index: 156 scientists 52 D-Index: 108 scientists 53 D-Index: 130 scientists 54 D-Index: 112 scientists 55 D-Index: 97 scientists 56 D-Index: 111 scientists 57 D-Index: 102 scientists 58 D-Index: 108 scientists 59 D-Index: 120 scientists 60 D-Index: 103 scientists 61 D-Index: 93 scientists 62 D-Index: 92 scientists 63 D-Index: 74 scientists 64 D-Index: 77 scientists 65 D-Index: 73 scientists 66 D-Index: 64 scientists 67 D-Index: 69 scientists 68 D-Index: 60 scientists 69 D-Index: 39 scientists 70 D-Index: 57 scientists 71 D-Index: 59 scientists 72 D-Index: 46 scientists 73 D-Index: 49 scientists 74 D-Index: 38 scientists 75 D-Index: 35 scientists 76 D-Index: 32 scientists 77 D-Index: 35 scientists 78 D-Index: 31 scientists 79 D-Index: 22 scientists 80 D-Index: 34 scientists 81 D-Index: 31 scientists 82 D-Index: 34 scientists 83 D-Index: 23 scientists 84 D-Index: 18 scientists 85 D-Index: 30 scientists 86 D-Index: 19 scientists 87 D-Index: 19 scientists 88 D-Index: 20 scientists 89 D-Index: 8 scientists 90 D-Index: 17 scientists 91 D-Index: 7 scientists 92 D-Index: 14 scientists 93 D-Index: 9 scientists 94 D-Index: 15 scientists 95 D-Index: 10 scientists 96 D-Index: 12 scientists 97 D-Index: 10 scientists 98 D-Index: 10 scientists 99 D-Index: 12 scientists 100 D-Index: 16 scientists 101 D-Index: 5 scientists 102 D-Index: 7 scientists 103 D-Index: 7 scientists 104 D-Index: 8 scientists 105 D-Index: 9 scientists 106 D-Index: 13 scientists 107 D-Index: 4 scientists 108 D-Index: 5 scientists 109 D-Index: 10 scientists 110 D-Index: 8 scientists 111+ D-Index: 96 scientists
30 D-Index 111+

This scientist: 32 D-Index — 10th percentile

10% of scientists in this discipline score the same or lower.

The last bar groups every scientist with 111 D-Index or more.

Overview

Ruilong Xie is affiliated with IBM in the United States and has a body of research spanning several fields within engineering and biological sciences. Their scientific work covers multiple subfields including biomedical engineering, plant science, electrical and electronic engineering, as well as cellular and molecular neuroscience and cognitive neuroscience.

The core topics in Xie's research include advanced sensor and energy harvesting materials, neuroscience and neural engineering, tactile and sensory interactions, plant disease resistance and genetics, plant-microbe interactions and immunity, conducting polymers and applications, and semiconductor materials and devices.

Xie has contributed to a series of publications over recent years. Notable papers include:

  • Vertical-Transport Nanosheet Technology for CMOS Scaling beyond Lateral-Transport Devices, 2021, 2021 IEEE International Electron Devices Meeting (IEDM)
  • Scalable Fabrication of Uniform Fast-Response Humidity Field Sensing Array for Respiration Recognition and Contactless Human-Machine Interaction, 2025, Advanced Functional Materials
  • Advancements in Flexible Electronics Fabrication: Film Formation, Patterning, and Interface Optimization for Cutting-Edge Healthcare Monitoring Devices, 2024, ACS Applied Materials & Interfaces
  • A head-to-head NLR gene pair from wild emmer confers stripe rust resistance in wheat, 2025, Nature Genetics
  • Molecular Chain Interpenetration-Enabled High Interfacial Compatibility of Ionic and Electronic Conductors for Stretchable Ionic Devices, 2025, Advanced Materials

Frequent co-authors who have collaborated with Xie include Fengwei Huo, Kai Tao, Jin Wu, Yibing Luo, and Yifei Sun.

Xie's research has been featured in journals and conference proceedings such as ACS Applied Materials & Interfaces, Advanced Functional Materials, the IEEE International Electron Devices Meeting, Nature Genetics, and Advanced Materials.

The scientist's work reflects interdisciplinary methods and applications, especially prominent in the integration of materials science with electronics and biological systems. The emphasis on flexible electronics, sensor arrays, and plant genetics illustrates a diverse research portfolio aimed at both technological innovation and biological understanding.

Best Publications

  • Semiconductor device with low-K spacers

    Xiuyu Cai;Ruilong Xie;Xunyuan Zhang

  • Integrated circuits and methods for fabricating integrated circuits with reduced parasitic capacitance

    Ruilong Xie;Xiuyu Cai;Xunyuan Zhang

  • Silicide protection during contact metallization and resulting semiconductor structures

    Vimal K. Kamineni;Ruilong Xie;Robert Miller

  • A 7nm FinFET technology featuring EUV patterning and dual strained high mobility channels

    R. Xie;P. Montanini;K. Akarvardar;N. Tripathi

  • Scaling Challenges for Advanced CMOS Devices

    Ajey P. Jacob;Ruilong Xie;Min Gyu Sung;Lars Liebmann

  • Directed self-assembly of block copolymers for 7 nanometre FinFET technology and beyond

    Chi-Chun Liu;Elliott Franke;Yann Mignot;Ruilong Xie

  • Multi-channel gate-all-around FET

    Qing Liu;Ruilong Xie;Chun-Chen Yeh;Xiuyu Cai

  • Integrated circuits including finfet devices and methods for fabricating the same

    Ruilong Xie;Xiuyu Cai;Ali Khakifirooz;Kangguo Cheng

  • Finfet semiconductor devices with improved source/drain resistance

    Ruilong Xie;Mark Raymond;Robert Miller

  • A 10nm platform technology for low power and high performance application featuring FINFET devices with multi workfunction gate stack on bulk and SOI

    K. I. Seo;B. Haran;D. Gupta;D. Guo

  • Effects of Sulfur Passivation on Germanium MOS Capacitors With HfON Gate Dielectric

    Ruilong Xie;Chunxiang Zhu

  • High-k gate stack on germanium substrate with fluorine incorporation

    Ruilong Xie;Mingbin Yu;Mei Ying Lai;Lap Chan

  • Full Bottom Dielectric Isolation to Enable Stacked Nanosheet Transistor for Low Power and High Performance Applications

    J. Zhang;S. Pancharatnam;C. Adams;H. Wu

  • Methods of forming semiconductor device with self-aligned contact elements and the resulting devices

    Xiuyu Cai;Ruilong Xie;John A. Iacoponi

  • Methods of forming contact structures on finfet semiconductor devices and the resulting devices

    Ruilong Xie;Ryan Ryoung-Han Kim;William J. Taylor

  • Effects of fluorine incorporation and forming gas annealing on high-k gated germanium metal-oxide-semiconductor with GeO2 surface passivation

    Ruilong Xie;Wei He;Mingbin Yu;Chunxiang Zhu

  • Defect-free strain relaxed buffer layer

    Pierre Morin;Kangguo Cheng;Jody Fronheiser;Xiuyu Cai

  • Methods of forming diffusion breaks on integrated circuit products comprised of FinFET devices and the resulting products

    Ruilong Xie;Min Gyu Sung;Ryan Ryoung-Han Kim;Kwan-Yong Lim

  • Formation of the dielectric cap layer for a replacement gate structure

    Ruilong Xie;Balasubramanian Pranatharthi Haran;David V. Horak;Su Chen Fan

  • Interface-Engineered High-Mobility High- $k$ /Ge pMOSFETs With 1-nm Equivalent Oxide Thickness

    Ruilong Xie;Thanh Hoa Phung;Wei He;Mingbin Yu

  • Integrated circuit and method for fabricating the same having a replacement gate structure

    Ruilong Xie;Pranatharthi Haran Balasubramanian

Frequent Co-Authors

Kangguo Cheng
Kangguo Cheng IBM (United States)
Ali Khakifirooz
Ali Khakifirooz Intel (United States)
Bipul C. Paul
Bipul C. Paul GlobalFoundries (United States)
Chunxiang Zhu
Chunxiang Zhu National University of Singapore
Terence B. Hook
Terence B. Hook IBM (United States)
Vamsi K. Paruchuri
Vamsi K. Paruchuri IBM (United States)
Alexander Reznicek
Alexander Reznicek IBM (United States)
Oleg Gluschenkov
Oleg Gluschenkov IBM (United States)
Sukant K. Tripathy
Sukant K. Tripathy University of Massachusetts Lowell
Matthew E. Colburn
Matthew E. Colburn Facebook (United States)

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