World's Best Scientists 2026 revealed!

D-Index & Metrics

Electronics and Electrical Engineering

D-Index
30
Citations
4525
World Ranking
6754
National Ranking
2197

Terence B. Hook publication distribution in Electronics and Electrical Engineering in 2026

The chart shows the distribution of publications by all Research.com ranked scientists in the field of Electronics and Electrical Engineering in 2026. The highlighted bar marks where Terence B. Hook sits on this spectrum.

34–53 publications: 24 scientists 54–73 publications: 52 scientists 74–93 publications: 114 scientists 94–113 publications: 203 scientists 114–133 publications: 269 scientists 134–153 publications: 355 scientists 154–173 publications: 403 scientists 174–193 publications: 445 scientists 194–213 publications: 430 scientists 214–233 publications: 431 scientists 234–253 publications: 399 scientists 254–273 publications: 366 scientists 274–293 publications: 335 scientists 294–313 publications: 300 scientists 314–333 publications: 276 scientists 334–353 publications: 250 scientists 354–373 publications: 214 scientists 374–393 publications: 187 scientists 394–413 publications: 152 scientists 414–433 publications: 169 scientists 434–453 publications: 147 scientists 454–473 publications: 111 scientists 474–493 publications: 117 scientists 494–513 publications: 103 scientists 514–533 publications: 99 scientists 534–553 publications: 92 scientists 554–573 publications: 75 scientists 574–593 publications: 58 scientists 594–613 publications: 69 scientists 614–633 publications: 50 scientists 634–653 publications: 62 scientists 654–673 publications: 54 scientists 674–693 publications: 44 scientists 694–713 publications: 37 scientists 714–733 publications: 28 scientists 734–753 publications: 26 scientists 754–773 publications: 26 scientists 774–793 publications: 19 scientists 794–813 publications: 23 scientists 814–833 publications: 20 scientists 834–853 publications: 16 scientists 854–873 publications: 20 scientists 874–893 publications: 11 scientists 894–913 publications: 11 scientists 914–933 publications: 16 scientists 934–953 publications: 13 scientists 954–973 publications: 10 scientists 974–993 publications: 11 scientists 994–1,013 publications: 9 scientists 1,014–1,033 publications: 9 scientists 1,034–1,053 publications: 10 scientists 1,054–1,064 publications: 6 scientists 1,065+ publications: 99 scientists
34 publications 1,065+

This scientist: 135 publications — 10th percentile

10% of scientists in this discipline score the same or lower.

The last bar groups every scientist with 1,065 publications or more.

Terence B. Hook D-index placement in Electronics and Electrical Engineering in 2026

The chart shows the D-index (discipline H-index) distribution of Electronics and Electrical Engineering scientists ranked by Research.com in 2026. The highlighted bar marks where Terence B. Hook sits on this spectrum.

30 D-Index: 178 scientists 31 D-Index: 257 scientists 32 D-Index: 263 scientists 33 D-Index: 262 scientists 34 D-Index: 244 scientists 35 D-Index: 236 scientists 36 D-Index: 211 scientists 37 D-Index: 220 scientists 38 D-Index: 214 scientists 39 D-Index: 214 scientists 40 D-Index: 205 scientists 41 D-Index: 187 scientists 42 D-Index: 194 scientists 43 D-Index: 201 scientists 44 D-Index: 155 scientists 45 D-Index: 189 scientists 46 D-Index: 148 scientists 47 D-Index: 160 scientists 48 D-Index: 134 scientists 49 D-Index: 130 scientists 50 D-Index: 141 scientists 51 D-Index: 156 scientists 52 D-Index: 108 scientists 53 D-Index: 130 scientists 54 D-Index: 112 scientists 55 D-Index: 97 scientists 56 D-Index: 111 scientists 57 D-Index: 102 scientists 58 D-Index: 108 scientists 59 D-Index: 120 scientists 60 D-Index: 103 scientists 61 D-Index: 93 scientists 62 D-Index: 92 scientists 63 D-Index: 74 scientists 64 D-Index: 77 scientists 65 D-Index: 73 scientists 66 D-Index: 64 scientists 67 D-Index: 69 scientists 68 D-Index: 60 scientists 69 D-Index: 39 scientists 70 D-Index: 57 scientists 71 D-Index: 59 scientists 72 D-Index: 46 scientists 73 D-Index: 49 scientists 74 D-Index: 38 scientists 75 D-Index: 35 scientists 76 D-Index: 32 scientists 77 D-Index: 35 scientists 78 D-Index: 31 scientists 79 D-Index: 22 scientists 80 D-Index: 34 scientists 81 D-Index: 31 scientists 82 D-Index: 34 scientists 83 D-Index: 23 scientists 84 D-Index: 18 scientists 85 D-Index: 30 scientists 86 D-Index: 19 scientists 87 D-Index: 19 scientists 88 D-Index: 20 scientists 89 D-Index: 8 scientists 90 D-Index: 17 scientists 91 D-Index: 7 scientists 92 D-Index: 14 scientists 93 D-Index: 9 scientists 94 D-Index: 15 scientists 95 D-Index: 10 scientists 96 D-Index: 12 scientists 97 D-Index: 10 scientists 98 D-Index: 10 scientists 99 D-Index: 12 scientists 100 D-Index: 16 scientists 101 D-Index: 5 scientists 102 D-Index: 7 scientists 103 D-Index: 7 scientists 104 D-Index: 8 scientists 105 D-Index: 9 scientists 106 D-Index: 13 scientists 107 D-Index: 4 scientists 108 D-Index: 5 scientists 109 D-Index: 10 scientists 110 D-Index: 8 scientists 111+ D-Index: 96 scientists
30 D-Index 111+

This scientist: 30 D-Index — 3rd percentile

3% of scientists in this discipline score the same or lower.

The last bar groups every scientist with 111 D-Index or more.

Overview

Terence B. Hook is affiliated with IBM in the United States, where they conduct research in the field of engineering, with a primary focus on electrical and electronic engineering. Their work emphasizes advancements in semiconductor technology and integrated circuit design.

The main topics of Terence B. Hook's research include:

  • Advancements in Semiconductor Devices and Circuit Design
  • Semiconductor materials and devices
  • Integrated Circuits and Semiconductor Failure Analysis

They have contributed scholarly work primarily published in the venue IEEE Transactions on Electron Devices.

One of their recent papers is titled Impact of Hot-Carrier Degradation on Drain-Induced Barrier Lowering in Multifin SOI n-Channel FinFETs With Self-Heating, published in 2020 in IEEE Transactions on Electron Devices.

Terence B. Hook collaborates frequently with several researchers including:

  • Charu Gupta
  • Anshul Gupta
  • Reinaldo A. Vega
  • Abhisek Dixit

Their research involves detailed analysis of semiconductor device performance and reliability, focusing on effects such as hot-carrier degradation in nanoscale device architectures. This work contributes to understanding how semiconductor devices behave under electrical stress and how these phenomena affect device stability and circuit functionality.

Best Publications

  • Stacked nanosheet gate-all-around transistor to enable scaling beyond FinFET

    N. Loubet;T. Hook;P. Montanini;C.-W. Yeung

  • Power and Technology Scaling into the 5 nm Node with Stacked Nanosheets

    Terence B. Hook

  • A 7nm FinFET technology featuring EUV patterning and dual strained high mobility channels

    R. Xie;P. Montanini;K. Akarvardar;N. Tripathi

  • Method of assessing potential for charging damage in SOI designs and structures for eliminating potential for damage

    Henry A. Bonges;David L. Harmon;Terence B. Hook;Wing L. Lai

  • Performance trade-offs in FinFET and gate-all-around device architectures for 7nm-node and beyond

    Seong-Dong Kim;Michael Guillorn;Isaac Lauer;Phil Oldiges

  • Lateral ion implant straggle and mask proximity effect

    T.B. Hook;J. Brown;P. Cottrell;E. Adler

  • High speed 45nm gate length CMOSFETs integrated into a 90nm bulk technology incorporating strain engineering

    V. Chan;R. Rengarajan;N. Rovedo;Wei Jin

  • The effects of fluorine on parametrics and reliability in a 0.18-/spl mu/m 3.5/6.8 nm dual gate oxide CMOS technology

    T.B. Hook;E. Adler;F. Guarin;J. Lukaitis

  • CMOS well structure and method of forming the same

    Wilfried Haensch;Terence B. Hook;Louis C. Hsu;Rajiv V. Joshi

  • High performance and low power transistors integrated in 65nm bulk CMOS technology

    Z. Luo;A. Steegen;M. Eller;R. Mann

  • Enchanced multi-threshold (MTCMOS) circuits using variable well bias

    S.V. Kosonocky;M. Irnmediato;P. Cottrell;T. Hook

  • A 10nm platform technology for low power and high performance application featuring FINFET devices with multi workfunction gate stack on bulk and SOI

    K. I. Seo;B. Haran;D. Gupta;D. Guo

  • Switching-Speed Limitations of Ferroelectric Negative-Capacitance FETs

    Zhi Cheng Yuan;Shahriar Rizwan;Michael Wong;Kyle Holland

  • Channel doping impact on FinFETs for 22nm and beyond

    C.-H. Lin;R. Kambhampati;R. J. Miller;T. B. Hook

  • Mechanism of Threshold Voltage Shift (ΔVth) Caused by Negative Bias Temperature Instability (NBTI) in Deep Submicron pMOSFETs

    Chuan Hsi Liu;Ming T. Lee;Chih Yung Lin;Jenkon Chen

  • Physically Unclonable Function Implemented Through Threshold Voltage Comparison

    Joel T. Ficke;William E. Hall;Terence B. Hook;Michael A. Sperling

  • Mechanism and process dependence of negative bias temperature instability (NBTI) for pMOSFETs with ultrathin gate dielectrics

    C.H. Liu;M.T. Lee;Chih-Yung Lin;J. Chen

  • UTBB FDSOI transistors with dual STI for a multi-V t strategy at 20nm node and below

    L. Grenouillet;M. Vinet;J. Gimbert;B. Giraud

  • Gate-Induced-Drain-Leakage Current in 45-nm CMOS Technology

    Xiaobin Yuan;Jae-Eun Park;Jing Wang;Enhai Zhao

  • The combined effects of deuterium anneals and deuterated barrier-nitride processing on hot-electron degradation in MOSFET's

    T.G. Ference;J.S. Burnham;W.F. Clark;T.B. Hook

  • Hot‐electron induced interface traps in metal/SiO2/Si capacitors: The effect of gate‐induced strain

    Terence B. Hook;T. P. Ma

  • Impact of back bias on ultra-thin body and BOX (UTBB) devices

    Q. Liu;F. Monsieur;A. Kumar;T. Yamamoto

  • FINFET technology featuring high mobility SiGe channel for 10nm and beyond

    D. Guo;G. Karve;G. Tsutsui;K-Y Lim

Frequent Co-Authors

Bruce B. Doris
Bruce B. Doris IBM (United States)
Anthony K. Stamper
Anthony K. Stamper GlobalFoundries (United States)
Ali Khakifirooz
Ali Khakifirooz Intel (United States)
Kangguo Cheng
Kangguo Cheng IBM (United States)
Douglas D. Coolbaugh
Douglas D. Coolbaugh University at Albany, State University of New York
Matthew J. Breitwisch
Matthew J. Breitwisch IBM (United States)
Robert H. Dennard
Robert H. Dennard IBM (United States)
Vamsi K. Paruchuri
Vamsi K. Paruchuri IBM (United States)
Vijay Narayanan
Vijay Narayanan IBM (United States)
Michael A. Guillorn
Michael A. Guillorn IBM (United States)

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