World's Best Scientists 2026 revealed!
Matthew J. Breitwisch

Matthew J. Breitwisch

D-Index & Metrics

Electronics and Electrical Engineering

D-Index
35
Citations
8034
World Ranking
5449
National Ranking
1870

Matthew J. Breitwisch publication distribution in Electronics and Electrical Engineering in 2026

The chart shows the distribution of publications by all Research.com ranked scientists in the field of Electronics and Electrical Engineering in 2026. The highlighted bar marks where Matthew J. Breitwisch sits on this spectrum.

34–53 publications: 24 scientists 54–73 publications: 52 scientists 74–93 publications: 114 scientists 94–113 publications: 203 scientists 114–133 publications: 269 scientists 134–153 publications: 355 scientists 154–173 publications: 403 scientists 174–193 publications: 445 scientists 194–213 publications: 430 scientists 214–233 publications: 431 scientists 234–253 publications: 399 scientists 254–273 publications: 366 scientists 274–293 publications: 335 scientists 294–313 publications: 300 scientists 314–333 publications: 276 scientists 334–353 publications: 250 scientists 354–373 publications: 214 scientists 374–393 publications: 187 scientists 394–413 publications: 152 scientists 414–433 publications: 169 scientists 434–453 publications: 147 scientists 454–473 publications: 111 scientists 474–493 publications: 117 scientists 494–513 publications: 103 scientists 514–533 publications: 99 scientists 534–553 publications: 92 scientists 554–573 publications: 75 scientists 574–593 publications: 58 scientists 594–613 publications: 69 scientists 614–633 publications: 50 scientists 634–653 publications: 62 scientists 654–673 publications: 54 scientists 674–693 publications: 44 scientists 694–713 publications: 37 scientists 714–733 publications: 28 scientists 734–753 publications: 26 scientists 754–773 publications: 26 scientists 774–793 publications: 19 scientists 794–813 publications: 23 scientists 814–833 publications: 20 scientists 834–853 publications: 16 scientists 854–873 publications: 20 scientists 874–893 publications: 11 scientists 894–913 publications: 11 scientists 914–933 publications: 16 scientists 934–953 publications: 13 scientists 954–973 publications: 10 scientists 974–993 publications: 11 scientists 994–1,013 publications: 9 scientists 1,014–1,033 publications: 9 scientists 1,034–1,053 publications: 10 scientists 1,054–1,064 publications: 6 scientists 1,065+ publications: 99 scientists
34 publications 1,065+

This scientist: 110 publications — 5th percentile

5% of scientists in this discipline score the same or lower.

The last bar groups every scientist with 1,065 publications or more.

Matthew J. Breitwisch D-index placement in Electronics and Electrical Engineering in 2026

The chart shows the D-index (discipline H-index) distribution of Electronics and Electrical Engineering scientists ranked by Research.com in 2026. The highlighted bar marks where Matthew J. Breitwisch sits on this spectrum.

30 D-Index: 178 scientists 31 D-Index: 257 scientists 32 D-Index: 263 scientists 33 D-Index: 262 scientists 34 D-Index: 244 scientists 35 D-Index: 236 scientists 36 D-Index: 211 scientists 37 D-Index: 220 scientists 38 D-Index: 214 scientists 39 D-Index: 214 scientists 40 D-Index: 205 scientists 41 D-Index: 187 scientists 42 D-Index: 194 scientists 43 D-Index: 201 scientists 44 D-Index: 155 scientists 45 D-Index: 189 scientists 46 D-Index: 148 scientists 47 D-Index: 160 scientists 48 D-Index: 134 scientists 49 D-Index: 130 scientists 50 D-Index: 141 scientists 51 D-Index: 156 scientists 52 D-Index: 108 scientists 53 D-Index: 130 scientists 54 D-Index: 112 scientists 55 D-Index: 97 scientists 56 D-Index: 111 scientists 57 D-Index: 102 scientists 58 D-Index: 108 scientists 59 D-Index: 120 scientists 60 D-Index: 103 scientists 61 D-Index: 93 scientists 62 D-Index: 92 scientists 63 D-Index: 74 scientists 64 D-Index: 77 scientists 65 D-Index: 73 scientists 66 D-Index: 64 scientists 67 D-Index: 69 scientists 68 D-Index: 60 scientists 69 D-Index: 39 scientists 70 D-Index: 57 scientists 71 D-Index: 59 scientists 72 D-Index: 46 scientists 73 D-Index: 49 scientists 74 D-Index: 38 scientists 75 D-Index: 35 scientists 76 D-Index: 32 scientists 77 D-Index: 35 scientists 78 D-Index: 31 scientists 79 D-Index: 22 scientists 80 D-Index: 34 scientists 81 D-Index: 31 scientists 82 D-Index: 34 scientists 83 D-Index: 23 scientists 84 D-Index: 18 scientists 85 D-Index: 30 scientists 86 D-Index: 19 scientists 87 D-Index: 19 scientists 88 D-Index: 20 scientists 89 D-Index: 8 scientists 90 D-Index: 17 scientists 91 D-Index: 7 scientists 92 D-Index: 14 scientists 93 D-Index: 9 scientists 94 D-Index: 15 scientists 95 D-Index: 10 scientists 96 D-Index: 12 scientists 97 D-Index: 10 scientists 98 D-Index: 10 scientists 99 D-Index: 12 scientists 100 D-Index: 16 scientists 101 D-Index: 5 scientists 102 D-Index: 7 scientists 103 D-Index: 7 scientists 104 D-Index: 8 scientists 105 D-Index: 9 scientists 106 D-Index: 13 scientists 107 D-Index: 4 scientists 108 D-Index: 5 scientists 109 D-Index: 10 scientists 110 D-Index: 8 scientists 111+ D-Index: 96 scientists
30 D-Index 111+

This scientist: 35 D-Index — 21st percentile

21% of scientists in this discipline score the same or lower.

The last bar groups every scientist with 111 D-Index or more.

Overview

What is he best known for?

The fields of study he is best known for:

  • Electrical engineering
  • Integrated circuit
  • Semiconductor

His primary areas of study are Phase-change memory, Electronic engineering, Electrical engineering, Optoelectronics and Phase-change material. His Phase-change memory research is multidisciplinary, relying on both Non-volatile memory, Noise temperature, Chip and Voltage regulator. His studies in Electronic engineering integrate themes in fields like Material properties and State.

His work in Optoelectronics covers topics such as Transistor which are related to areas like Semiconductor. The various areas that Matthew J. Breitwisch examines in his Phase-change material study include Switching time, Layer, Trench, Nanotechnology and Memory cell. His Nanotechnology research is multidisciplinary, incorporating elements of Electrical conductor and Resistive touchscreen.

His most cited work include:

  • Phase-change random access memory: a scalable technology (806 citations)
  • Phase change memory technology (692 citations)
  • Write Strategies for 2 and 4-bit Multi-Level Phase-Change Memory (242 citations)

What are the main themes of his work throughout his whole career to date?

Matthew J. Breitwisch focuses on Phase-change memory, Electronic engineering, Optoelectronics, Electrical engineering and Layer. His biological study spans a wide range of topics, including Phase-change material, State, Memory cell, Chalcogenide and Reset. His Electronic engineering research incorporates elements of Threshold voltage, Non-volatile memory and Chip.

His Optoelectronics study integrates concerns from other disciplines, such as Transistor, Substrate and Nanotechnology. Many of his research projects under Electrical engineering are closely connected to Neuromorphic circuits with Neuromorphic circuits, tying the diverse disciplines of science together. His Layer research incorporates themes from Electrical contacts, Electrical conductor and Dielectric.

He most often published in these fields:

  • Phase-change memory (51.28%)
  • Electronic engineering (41.03%)
  • Optoelectronics (35.90%)

What were the highlights of his more recent work (between 2010-2014)?

  • Phase-change memory (51.28%)
  • Electronic engineering (41.03%)
  • Phase-change material (23.72%)

In recent papers he was focusing on the following fields of study:

His main research concerns Phase-change memory, Electronic engineering, Phase-change material, Optoelectronics and Layer. His research in Phase-change memory intersects with topics in Computer hardware, Amorphous solid, Chip, Memory cell and CMOS. His Electronic engineering study frequently draws connections to other fields, such as Energy consumption.

His Phase-change material research includes themes of Wafer, Crystallography, Electrical resistivity and conductivity and Electrical conductor, Composite material. Matthew J. Breitwisch has included themes like Transistor and Electrical engineering in his Optoelectronics study. His work deals with themes such as Compressive pressure, Electrical contacts and Current, which intersect with Layer.

Between 2010 and 2014, his most popular works were:

  • Drift-Tolerant Multilevel Phase-Change Memory (121 citations)
  • Nanoscale electronic synapses using phase change devices (121 citations)
  • Programming algorithms for multilevel phase-change memory (84 citations)

In his most recent research, the most cited papers focused on:

  • Electrical engineering
  • Integrated circuit
  • Semiconductor

Matthew J. Breitwisch mostly deals with Phase-change memory, Electronic engineering, Optoelectronics, Phase-change material and Layer. In his study, which falls under the umbrella issue of Phase-change memory, Phase is strongly linked to Amorphous solid. He interconnects Chip and Resistance drift in the investigation of issues within Electronic engineering.

His work carried out in the field of Optoelectronics brings together such families of science as Material properties, Electrical engineering and Thermal stability. The study incorporates disciplines such as Thermal insulation, Electrical resistivity and conductivity, Thermal barrier coating and Wafer in addition to Phase-change material. His Layer research focuses on Fin and how it connects with Memory cell.

Best Publications

  • Phase change memory technology

    Geoffrey W. Burr;Matthew J. Breitwisch;Michele Franceschini;Davide Garetto

  • Phase-change random access memory: a scalable technology

    S. Raoux;G. W. Burr;M. J. Breitwisch;C. T. Rettner

  • Write Strategies for 2 and 4-bit Multi-Level Phase-Change Memory

    T. Nirschl;J.B. Phipp;T.D. Happ;G.W. Burr

  • Novel One-Mask Self-Heating Pillar Phase Change Memory

    T. Happ;M. Breitwisch;A. Schrott;J. Philipp

  • Ultra-Thin Phase-Change Bridge Memory Device Using GeSb

    Y. C. Chen;C. T. Rettner;S. Raoux;G. W. Burr

  • Area efficient neuromorphic system that connects a FET in a diode configuration, and a variable resistance material to junctions of neuron circuit blocks

    Matthew J. Breitwisch;Chung Hon Lam;Dharmendra S. Modha;Bipin Rajendran

  • Nanoscale electronic synapses using phase change devices

    Bryan L. Jackson;Bipin Rajendran;Gregory S. Corrado;Matthew Breitwisch

  • Field effect transistor and making method thereof

    Anderson Brent A Breitwisch Ma

  • Drift-Tolerant Multilevel Phase-Change Memory

    N. Papandreou;H. Pozidis;T. Mittelholzer;G. F. Close

  • Novel Lithography-Independent Pore Phase Change Memory

    M. Breitwisch;T. Nirschl;C.F. Chen;Y. Zhu

  • Resistive memory devices having a not-and(nand) structure

    Matthew J. Breitwisch;Gary S. Ditlow;Michele M. Franceschini;Luis A. Lastras-Montano

  • Programming algorithms for multilevel phase-change memory

    N. Papandreou;H. Pozidis;A. Pantazi;A. Sebastian

  • A functional FinFET-DGCMOS SRAM cell

    E.J. Nowak;B.A. Rainey;D.M. Fried;J. Kedzierski

  • A high performance phase change memory with fast switching speed and high temperature retention by engineering the Ge x Sb y Te z phase change material

    H. Y. Cheng;T. H. Hsu;S. Raoux;J.Y. Wu

  • Uniform critical dimension size pore for pcram application

    Matthew J. Breitwisch;Roger W. Cheek;Chung H. Lam;Hsiang-Lan Lung

  • Phase change memory cell with reduced switchable volume

    Matthew J. Breitwisch;Roger W. Cheek;Eric Andrew Joseph;Chung Hon Lam

  • Vertical field effect transistor arrays including gate electrodes annularly surrounding semiconductor pillars

    Matthew J. Breitwisch;Chung H. Lam;Alejandro G. Schrott

  • Phase change memory cell with limited switchable volume

    Matthew J. Breitwisch;Chung Hon Lam;Jan Boris Philipp;Stephen M. Rossnagel

  • Phase change memory with tapered heater

    Matthew Breitwisch;Thomas Happ;Eric A. Joseph;Hsiang-Lan Lung

  • Electronic learning synapse with spike-timing dependent plasticity using phase change memory

    Bipin Rajendran;Matthew Joseph Breitwisch;Chung Hon Lam;Roger Cheek

Frequent Co-Authors

Chung H. Lam
Chung H. Lam IBM (United States)
Bipin Rajendran
Bipin Rajendran King's College London
Hsiang-Lan Lung
Hsiang-Lan Lung Macronix International (Taiwan)
Simone Raoux
Simone Raoux Helmholtz-Zentrum Berlin für Materialien und Energie
Geoffrey W. Burr
Geoffrey W. Burr IBM (United States)
Erh-Kun Lai
Erh-Kun Lai Macronix International (Taiwan)
Dharmendra S. Modha
Dharmendra S. Modha IBM (United States)
Charles T. Rettner
Charles T. Rettner IBM (United States)
Terence B. Hook
Terence B. Hook IBM (United States)

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