World's Best Scientists 2026 revealed!
Matthew J. Breitwisch

Matthew J. Breitwisch

D-Index & Metrics

Electronics and Electrical Engineering

D-Index
35
Citations
8034
World Ranking
5449
National Ranking
1869

Overview

What is he best known for?

The fields of study he is best known for:

  • Electrical engineering
  • Integrated circuit
  • Semiconductor

His primary areas of study are Phase-change memory, Electronic engineering, Electrical engineering, Optoelectronics and Phase-change material. His Phase-change memory research is multidisciplinary, relying on both Non-volatile memory, Noise temperature, Chip and Voltage regulator. His studies in Electronic engineering integrate themes in fields like Material properties and State.

His work in Optoelectronics covers topics such as Transistor which are related to areas like Semiconductor. The various areas that Matthew J. Breitwisch examines in his Phase-change material study include Switching time, Layer, Trench, Nanotechnology and Memory cell. His Nanotechnology research is multidisciplinary, incorporating elements of Electrical conductor and Resistive touchscreen.

His most cited work include:

  • Phase-change random access memory: a scalable technology (806 citations)
  • Phase change memory technology (692 citations)
  • Write Strategies for 2 and 4-bit Multi-Level Phase-Change Memory (242 citations)

What are the main themes of his work throughout his whole career to date?

Matthew J. Breitwisch focuses on Phase-change memory, Electronic engineering, Optoelectronics, Electrical engineering and Layer. His biological study spans a wide range of topics, including Phase-change material, State, Memory cell, Chalcogenide and Reset. His Electronic engineering research incorporates elements of Threshold voltage, Non-volatile memory and Chip.

His Optoelectronics study integrates concerns from other disciplines, such as Transistor, Substrate and Nanotechnology. Many of his research projects under Electrical engineering are closely connected to Neuromorphic circuits with Neuromorphic circuits, tying the diverse disciplines of science together. His Layer research incorporates themes from Electrical contacts, Electrical conductor and Dielectric.

He most often published in these fields:

  • Phase-change memory (51.28%)
  • Electronic engineering (41.03%)
  • Optoelectronics (35.90%)

What were the highlights of his more recent work (between 2010-2014)?

  • Phase-change memory (51.28%)
  • Electronic engineering (41.03%)
  • Phase-change material (23.72%)

In recent papers he was focusing on the following fields of study:

His main research concerns Phase-change memory, Electronic engineering, Phase-change material, Optoelectronics and Layer. His research in Phase-change memory intersects with topics in Computer hardware, Amorphous solid, Chip, Memory cell and CMOS. His Electronic engineering study frequently draws connections to other fields, such as Energy consumption.

His Phase-change material research includes themes of Wafer, Crystallography, Electrical resistivity and conductivity and Electrical conductor, Composite material. Matthew J. Breitwisch has included themes like Transistor and Electrical engineering in his Optoelectronics study. His work deals with themes such as Compressive pressure, Electrical contacts and Current, which intersect with Layer.

Between 2010 and 2014, his most popular works were:

  • Drift-Tolerant Multilevel Phase-Change Memory (121 citations)
  • Nanoscale electronic synapses using phase change devices (121 citations)
  • Programming algorithms for multilevel phase-change memory (84 citations)

In his most recent research, the most cited papers focused on:

  • Electrical engineering
  • Integrated circuit
  • Semiconductor

Matthew J. Breitwisch mostly deals with Phase-change memory, Electronic engineering, Optoelectronics, Phase-change material and Layer. In his study, which falls under the umbrella issue of Phase-change memory, Phase is strongly linked to Amorphous solid. He interconnects Chip and Resistance drift in the investigation of issues within Electronic engineering.

His work carried out in the field of Optoelectronics brings together such families of science as Material properties, Electrical engineering and Thermal stability. The study incorporates disciplines such as Thermal insulation, Electrical resistivity and conductivity, Thermal barrier coating and Wafer in addition to Phase-change material. His Layer research focuses on Fin and how it connects with Memory cell.

Best Publications

  • Phase change memory technology

    Geoffrey W. Burr;Matthew J. Breitwisch;Michele Franceschini;Davide Garetto

  • Phase-change random access memory: a scalable technology

    S. Raoux;G. W. Burr;M. J. Breitwisch;C. T. Rettner

  • Write Strategies for 2 and 4-bit Multi-Level Phase-Change Memory

    T. Nirschl;J.B. Phipp;T.D. Happ;G.W. Burr

  • Novel One-Mask Self-Heating Pillar Phase Change Memory

    T. Happ;M. Breitwisch;A. Schrott;J. Philipp

  • Ultra-Thin Phase-Change Bridge Memory Device Using GeSb

    Y. C. Chen;C. T. Rettner;S. Raoux;G. W. Burr

  • Area efficient neuromorphic system that connects a FET in a diode configuration, and a variable resistance material to junctions of neuron circuit blocks

    Matthew J. Breitwisch;Chung Hon Lam;Dharmendra S. Modha;Bipin Rajendran

  • Nanoscale electronic synapses using phase change devices

    Bryan L. Jackson;Bipin Rajendran;Gregory S. Corrado;Matthew Breitwisch

  • Field effect transistor and making method thereof

    Anderson Brent A Breitwisch Ma

  • Drift-Tolerant Multilevel Phase-Change Memory

    N. Papandreou;H. Pozidis;T. Mittelholzer;G. F. Close

  • Novel Lithography-Independent Pore Phase Change Memory

    M. Breitwisch;T. Nirschl;C.F. Chen;Y. Zhu

  • Resistive memory devices having a not-and(nand) structure

    Matthew J. Breitwisch;Gary S. Ditlow;Michele M. Franceschini;Luis A. Lastras-Montano

  • Programming algorithms for multilevel phase-change memory

    N. Papandreou;H. Pozidis;A. Pantazi;A. Sebastian

  • A functional FinFET-DGCMOS SRAM cell

    E.J. Nowak;B.A. Rainey;D.M. Fried;J. Kedzierski

  • A high performance phase change memory with fast switching speed and high temperature retention by engineering the Ge x Sb y Te z phase change material

    H. Y. Cheng;T. H. Hsu;S. Raoux;J.Y. Wu

  • Uniform critical dimension size pore for pcram application

    Matthew J. Breitwisch;Roger W. Cheek;Chung H. Lam;Hsiang-Lan Lung

  • Phase change memory cell with reduced switchable volume

    Matthew J. Breitwisch;Roger W. Cheek;Eric Andrew Joseph;Chung Hon Lam

  • Vertical field effect transistor arrays including gate electrodes annularly surrounding semiconductor pillars

    Matthew J. Breitwisch;Chung H. Lam;Alejandro G. Schrott

  • Phase change memory cell with limited switchable volume

    Matthew J. Breitwisch;Chung Hon Lam;Jan Boris Philipp;Stephen M. Rossnagel

  • Phase change memory with tapered heater

    Matthew Breitwisch;Thomas Happ;Eric A. Joseph;Hsiang-Lan Lung

  • Electronic learning synapse with spike-timing dependent plasticity using phase change memory

    Bipin Rajendran;Matthew Joseph Breitwisch;Chung Hon Lam;Roger Cheek

Frequent Co-Authors

Chung H. Lam
Chung H. Lam IBM (United States)
Bipin Rajendran
Bipin Rajendran King's College London
Hsiang-Lan Lung
Hsiang-Lan Lung Macronix International (Taiwan)
Simone Raoux
Simone Raoux Helmholtz-Zentrum Berlin für Materialien und Energie
Erh-Kun Lai
Erh-Kun Lai Macronix International (Taiwan)
Charles T. Rettner
Charles T. Rettner IBM (United States)
Terence B. Hook
Terence B. Hook IBM (United States)
Min Yang
Min Yang Sterne, Kessler, Goldstein & Fox
Abu Sebastian
Abu Sebastian IBM Research - Zurich

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