D-Index & Metrics Best Publications

D-Index & Metrics D-index (Discipline H-index) only includes papers and citation values for an examined discipline in contrast to General H-index which accounts for publications across all disciplines.

Discipline name D-index D-index (Discipline H-index) only includes papers and citation values for an examined discipline in contrast to General H-index which accounts for publications across all disciplines. Citations Publications World Ranking National Ranking
Electronics and Electrical Engineering D-index 37 Citations 5,729 163 World Ranking 3315 National Ranking 52

Overview

What is he best known for?

The fields of study he is best known for:

  • Electrical engineering
  • Semiconductor
  • Composite material

Erh-Kun Lai mainly focuses on Optoelectronics, Electrical engineering, Electronic engineering, Resistive random-access memory and Layer. He works on Optoelectronics which deals in particular with Silicon. His Electrical engineering study deals with Flash memory intersecting with Thin-film transistor, Dielectric, 3d memory and Computer data storage.

His Electronic engineering research is multidisciplinary, relying on both Void and Integrated circuit. His Resistive random-access memory research integrates issues from Low voltage, Air gap, Sheet resistance, Insulator and Thermal oxidation. Much of his study explores Layer relationship to Electrical conductor.

His most cited work include:

  • Programmable resistive RAM and manufacturing method (201 citations)
  • Method for forming self-aligned thermal isolation cell for a variable resistance memory array (188 citations)
  • A Multi-Layer Stackable Thin-Film Transistor (TFT) NAND-Type Flash Memory (182 citations)

What are the main themes of his work throughout his whole career to date?

The scientist’s investigation covers issues in Optoelectronics, Layer, Electrical engineering, Electronic engineering and Electrical conductor. His work deals with themes such as Substrate and Flash memory, which intersect with Optoelectronics. As a part of the same scientific study, Erh-Kun Lai usually deals with the Layer, concentrating on Memory cell and frequently concerns with Bistability and Phase-change material.

His biological study spans a wide range of topics, including Spark plug and Nitride. His Electronic engineering study also includes

  • Phase-change memory together with Threshold voltage,
  • Resistive random-access memory and related Nanotechnology. His studies in Electrical conductor integrate themes in fields like Electrical contacts and Conductor.

He most often published in these fields:

  • Optoelectronics (71.36%)
  • Layer (33.17%)
  • Electrical engineering (29.65%)

What were the highlights of his more recent work (between 2012-2020)?

  • Optoelectronics (71.36%)
  • Layer (33.17%)
  • Resistive random-access memory (13.57%)

In recent papers he was focusing on the following fields of study:

His primary scientific interests are in Optoelectronics, Layer, Resistive random-access memory, Electronic engineering and Phase-change memory. Erh-Kun Lai has included themes like Pillar and Nanotechnology in his Optoelectronics study. His biological study spans a wide range of topics, including Inorganic chemistry, Electrical conductor, Chemical engineering and Conductor.

His work deals with themes such as Memory window, Reliability, Silicon and Current, which intersect with Resistive random-access memory. The Electronic engineering study which covers Memory cell that intersects with Integrated circuit. His Phase-change memory research incorporates elements of Threshold voltage, Computer hardware, Multi-level cell and Doping.

Between 2012 and 2020, his most popular works were:

  • An ultra high endurance and thermally stable selector based on TeAsGeSiSe chalcogenides compatible with BEOL IC Integration for cross-point PCM (22 citations)
  • A novel inspection and annealing procedure to rejuvenate phase change memory from cycling-induced degradations for storage class memory applications (14 citations)
  • Damascene conductor for 3D array (14 citations)

In his most recent research, the most cited papers focused on:

  • Electrical engineering
  • Semiconductor
  • Composite material

Erh-Kun Lai spends much of his time researching Optoelectronics, Electronic engineering, Annealing, Phase-change memory and Memory window. His Optoelectronics research is multidisciplinary, incorporating elements of Thin film and Pillar. The various areas that Erh-Kun Lai examines in his Electronic engineering study include Electrical conductor, Ultra high density, Conductor and Resistive random-access memory.

His research integrates issues of Bit line and Dielectric in his study of Electrical conductor. His work carried out in the field of Resistive random-access memory brings together such families of science as Layer, Thermal conduction and Memory cell. His Phase-change memory research includes elements of Chemical vapor deposition, Doping and Storage class memory.

This overview was generated by a machine learning system which analysed the scientist’s body of work. If you have any feedback, you can contact us here.

Best Publications

Bridge resistance random access memory device with a singular contact structure

ChiaHua Ho;Erh-Kun Lai;Kuang Yeu Hsieh.
(2006)

291 Citations

Programmable resistive RAM and manufacturing method

ChiaHua Ho;Erh Kun Lai;Kuang Yeu Hsieh.
(2006)

255 Citations

Manufacturing Method for Phase Change RAM with Electrode Layer Process

Erh Kun Lai;ChiaHua Ho;Yi Chou Chen;Kuang Yeu Hsieh.
(2006)

213 Citations

Methods of operating non-volatile memory cells having an oxide/nitride multilayer insulating structure

Erh Kun Lai;Yen Hao Shih;Tzu Hsuan Hsu;Shih Chin Lee.
(2007)

212 Citations

Memory cell device and manufacturing method

Erh-Kun Lai;ChiaHua Ho;Kuang Yeu Hsieh.
(2006)

203 Citations

3d two-bit-per-cell nand flash memory

Hsiang-Lan Lung;Hang-Ting Lue;Yen-Hao Shih;Erh-Kun Lai.
(2010)

202 Citations

Method of a multi-level cell resistance random access memory with metal oxides

Erh-Kun Lai;ChiaHua Ho;Kuang Yeu Hsieh.
(2010)

201 Citations

Method for forming self-aligned thermal isolation cell for a variable resistance memory array

Erh-Kun Lai;ChiaHua Ho;Kuang Yeu Hsieh.
(2006)

196 Citations

3d memory array arranged for fn tunneling program and erase

Hsiang-Lan Lung;Yen-Hao Shih;Erh-Kun Lai;Ming Hsiu Lee.
(2010)

196 Citations

Cell operation methods using gate-injection for floating gate nand flash memory

Hang-Ting Lue;Tzu-Hsuan Hsu;Erh-Kun Lai.
(2006)

191 Citations

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