World's Best Scientists 2026 revealed!

D-Index & Metrics

Electronics and Electrical Engineering

D-Index
43
Citations
6846
World Ranking
3931
National Ranking
64

Erh-Kun Lai publication distribution in Electronics and Electrical Engineering in 2026

The chart shows the distribution of publications by all Research.com ranked scientists in the field of Electronics and Electrical Engineering in 2026. The highlighted bar marks where Erh-Kun Lai sits on this spectrum.

34–53 publications: 24 scientists 54–73 publications: 52 scientists 74–93 publications: 114 scientists 94–113 publications: 203 scientists 114–133 publications: 269 scientists 134–153 publications: 355 scientists 154–173 publications: 403 scientists 174–193 publications: 445 scientists 194–213 publications: 430 scientists 214–233 publications: 431 scientists 234–253 publications: 399 scientists 254–273 publications: 366 scientists 274–293 publications: 335 scientists 294–313 publications: 300 scientists 314–333 publications: 276 scientists 334–353 publications: 250 scientists 354–373 publications: 214 scientists 374–393 publications: 187 scientists 394–413 publications: 152 scientists 414–433 publications: 169 scientists 434–453 publications: 147 scientists 454–473 publications: 111 scientists 474–493 publications: 117 scientists 494–513 publications: 103 scientists 514–533 publications: 99 scientists 534–553 publications: 92 scientists 554–573 publications: 75 scientists 574–593 publications: 58 scientists 594–613 publications: 69 scientists 614–633 publications: 50 scientists 634–653 publications: 62 scientists 654–673 publications: 54 scientists 674–693 publications: 44 scientists 694–713 publications: 37 scientists 714–733 publications: 28 scientists 734–753 publications: 26 scientists 754–773 publications: 26 scientists 774–793 publications: 19 scientists 794–813 publications: 23 scientists 814–833 publications: 20 scientists 834–853 publications: 16 scientists 854–873 publications: 20 scientists 874–893 publications: 11 scientists 894–913 publications: 11 scientists 914–933 publications: 16 scientists 934–953 publications: 13 scientists 954–973 publications: 10 scientists 974–993 publications: 11 scientists 994–1,013 publications: 9 scientists 1,014–1,033 publications: 9 scientists 1,034–1,053 publications: 10 scientists 1,054–1,064 publications: 6 scientists 1,065+ publications: 99 scientists
34 publications 1,065+

This scientist: 188 publications — 26th percentile

26% of scientists in this discipline score the same or lower.

The last bar groups every scientist with 1,065 publications or more.

Erh-Kun Lai D-index placement in Electronics and Electrical Engineering in 2026

The chart shows the D-index (discipline H-index) distribution of Electronics and Electrical Engineering scientists ranked by Research.com in 2026. The highlighted bar marks where Erh-Kun Lai sits on this spectrum.

30 D-Index: 178 scientists 31 D-Index: 257 scientists 32 D-Index: 263 scientists 33 D-Index: 262 scientists 34 D-Index: 244 scientists 35 D-Index: 236 scientists 36 D-Index: 211 scientists 37 D-Index: 220 scientists 38 D-Index: 214 scientists 39 D-Index: 214 scientists 40 D-Index: 205 scientists 41 D-Index: 187 scientists 42 D-Index: 194 scientists 43 D-Index: 201 scientists 44 D-Index: 155 scientists 45 D-Index: 189 scientists 46 D-Index: 148 scientists 47 D-Index: 160 scientists 48 D-Index: 134 scientists 49 D-Index: 130 scientists 50 D-Index: 141 scientists 51 D-Index: 156 scientists 52 D-Index: 108 scientists 53 D-Index: 130 scientists 54 D-Index: 112 scientists 55 D-Index: 97 scientists 56 D-Index: 111 scientists 57 D-Index: 102 scientists 58 D-Index: 108 scientists 59 D-Index: 120 scientists 60 D-Index: 103 scientists 61 D-Index: 93 scientists 62 D-Index: 92 scientists 63 D-Index: 74 scientists 64 D-Index: 77 scientists 65 D-Index: 73 scientists 66 D-Index: 64 scientists 67 D-Index: 69 scientists 68 D-Index: 60 scientists 69 D-Index: 39 scientists 70 D-Index: 57 scientists 71 D-Index: 59 scientists 72 D-Index: 46 scientists 73 D-Index: 49 scientists 74 D-Index: 38 scientists 75 D-Index: 35 scientists 76 D-Index: 32 scientists 77 D-Index: 35 scientists 78 D-Index: 31 scientists 79 D-Index: 22 scientists 80 D-Index: 34 scientists 81 D-Index: 31 scientists 82 D-Index: 34 scientists 83 D-Index: 23 scientists 84 D-Index: 18 scientists 85 D-Index: 30 scientists 86 D-Index: 19 scientists 87 D-Index: 19 scientists 88 D-Index: 20 scientists 89 D-Index: 8 scientists 90 D-Index: 17 scientists 91 D-Index: 7 scientists 92 D-Index: 14 scientists 93 D-Index: 9 scientists 94 D-Index: 15 scientists 95 D-Index: 10 scientists 96 D-Index: 12 scientists 97 D-Index: 10 scientists 98 D-Index: 10 scientists 99 D-Index: 12 scientists 100 D-Index: 16 scientists 101 D-Index: 5 scientists 102 D-Index: 7 scientists 103 D-Index: 7 scientists 104 D-Index: 8 scientists 105 D-Index: 9 scientists 106 D-Index: 13 scientists 107 D-Index: 4 scientists 108 D-Index: 5 scientists 109 D-Index: 10 scientists 110 D-Index: 8 scientists 111+ D-Index: 96 scientists
30 D-Index 111+

This scientist: 43 D-Index — 45th percentile

45% of scientists in this discipline score the same or lower.

The last bar groups every scientist with 111 D-Index or more.

Overview

Erh-Kun Lai is affiliated with Macronix International (Taiwan) and conducts research focused primarily in the fields of Materials Science and Engineering. Their work spans several subfields including Materials Chemistry, Electrical and Electronic Engineering, Clinical Psychology, Polymers and Plastics, and Electronic, Optical and Magnetic Materials.

Their research primarily investigates phase-change materials and chalcogenides, with topics covering:

  • Phase-change materials and chalcogenides
  • Chalcogenide Semiconductor Thin Films
  • Advanced Memory and Neural Computing
  • Transition Metal Oxide Nanomaterials
  • Perovskite Materials and Applications
  • Liquid Crystal Research Advancements
  • Quantum Dots Synthesis And Properties

Erh-Kun Lai has authored or coauthored several papers published in notable venues such as the IEEE International Electron Devices Meeting (IEDM), IEEE Electron Devices Technology & Manufacturing Conference (EDTM), Scientific Reports, and the IEEE International Reliability Physics Symposium (IRPS). Recent publications include:

  • Optimizing AsSeGe Chalcogenides by Dopants for Extremely Low IOFF, High Endurance and Low Vth Drift 3D Crosspoint Memory, 2021 IEEE International Electron Devices Meeting (IEDM), 2021
  • New Phase-Change Materials by Atomic-Level Engineering the Dopants for Extremely Low Vth Drift at 85 °C and High Endurance 3D Crosspoint Memory: IBM/Macronix PCRAM Joint Project, 2022 International Electron Devices Meeting (IEDM), 2022
  • Device Study on OTS-PCM for Persistent Memory Application: IBM/Macronix Phase Change Memory Joint Project, 2022 6th IEEE Electron Devices Technology & Manufacturing Conference (EDTM), 2022
  • A GexSe1-x switch-only-memory technology through polarized atomic distribution, Scientific Reports, 2024
  • Endurance Evaluation on OTS-PCM Device using Constant Current Stress Scheme, 2022 IEEE International Reliability Physics Symposium (IRPS), 2022

Their frequent collaborators include researchers Huai-Yu Cheng, Wei-Chih Chien, I. T. Kuo, Robert L. Bruce, and C. W. Yeh, demonstrating a history of collaborative work producing multiple coauthored papers.

Publication venues with recurrent appearances in Lai's portfolio are:

  • 2021 IEEE International Electron Devices Meeting (IEDM)
  • 2022 International Electron Devices Meeting (IEDM)
  • 2022 6th IEEE Electron Devices Technology & Manufacturing Conference (EDTM)
  • Scientific Reports
  • 2022 IEEE International Reliability Physics Symposium (IRPS)

Best Publications

  • Bridge resistance random access memory device with a singular contact structure

    ChiaHua Ho;Erh-Kun Lai;Kuang Yeu Hsieh

  • Programmable resistive RAM and manufacturing method

    ChiaHua Ho;Erh Kun Lai;Kuang Yeu Hsieh

  • Manufacturing Method for Phase Change RAM with Electrode Layer Process

    Erh Kun Lai;ChiaHua Ho;Yi Chou Chen;Kuang Yeu Hsieh

  • Methods of operating non-volatile memory cells having an oxide/nitride multilayer insulating structure

    Erh Kun Lai;Yen Hao Shih;Tzu Hsuan Hsu;Shih Chin Lee

  • Memory cell device and manufacturing method

    Erh-Kun Lai;ChiaHua Ho;Kuang Yeu Hsieh

  • Method of a multi-level cell resistance random access memory with metal oxides

    Erh-Kun Lai;ChiaHua Ho;Kuang Yeu Hsieh

  • BE-SONOS: A bandgap engineered SONOS with excellent performance and reliability

    Hang-Ting Lue;Szu-Yu Wang;Erh-Kun Lai;Yen-Hao Shih

  • Method for forming self-aligned thermal isolation cell for a variable resistance memory array

    Erh-Kun Lai;ChiaHua Ho;Kuang Yeu Hsieh

  • 3d memory array arranged for fn tunneling program and erase

    Hsiang-Lan Lung;Yen-Hao Shih;Erh-Kun Lai;Ming Hsiu Lee

  • Cell operation methods using gate-injection for floating gate nand flash memory

    Hang-Ting Lue;Tzu-Hsuan Hsu;Erh-Kun Lai

  • A Multi-Layer Stackable Thin-Film Transistor (TFT) NAND-Type Flash Memory

    Erh-Kun Lai;Hang-Ting Lue;Yi-Hsuan Hsiao;Jung-Yu Hsieh

  • Phase change materials and their application to random access memory technology

    Simone Raoux;Robert M. Shelby;Jean Jordan-Sweet;Becky Munoz

  • Structures and methods of a bistable resistive random access memory

    ChiaHua Ho;Erh-Kun Lai;Kuang Yeu Hsieh

  • Integrated circuit memory with single crystal silicon on silicide driver and manufacturing method

    Hsiang-Lan Lung;Erh-Kun Lai

  • Bridge resistance random access memory device and method with a singular contact structure

    ChiaHua Ho;Erh-Kun Lai;Kuang Yeu Hsieh

  • Unipolar Switching Behaviors of RTO $\hbox{WO}_{X}$ RRAM

    W.C. Chien;Y.C. Chen;E.K. Lai;Y.D. Yao

  • Study of sub-30nm thin film transistor (TFT) charge-trapping (CT) devices for 3D NAND flash application

    Tzu-Hsuan Hsu;Hang-Ting Lue;Chih-Chang Hsieh;Erh-Kun Lai

  • A Highly Reliable Self-Aligned Graded Oxide WO x Resistance Memory: Conduction Mechanisms and Reliability

    ChiaHua Ho;E.K. Lai;M.D. Lee;C.L. Pan

  • Method for manufacturing a resistor random access memory with a self-aligned air gap insulator

    Erh Kun Lai;ChiaHua Ho;Kuang Yeu Hsieh

  • Memory device manufacturing method with memory element having a metal-oxygen compound

    ChiaHua Ho;Erh-Kun Lai

Frequent Co-Authors

Hang-Ting Lue
Hang-Ting Lue Macronix International (Taiwan)
Chih-Yuan Lu
Chih-Yuan Lu Macronix International (Taiwan)
Hsiang-Lan Lung
Hsiang-Lan Lung Macronix International (Taiwan)
Simone Raoux
Simone Raoux Helmholtz-Zentrum Berlin für Materialien und Energie
Matthew J. Breitwisch
Matthew J. Breitwisch IBM (United States)
Sang-Bum Kim
Sang-Bum Kim Seoul National University
Bipin Rajendran
Bipin Rajendran King's College London
Ya-Chin King
Ya-Chin King National Tsing Hua University
Tseung-Yuen Tseng
Tseung-Yuen Tseng National Yang Ming Chiao Tung University
Christian Lavoie
Christian Lavoie IBM (United States)

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Related Online Degrees & Career Pathways

For students studying Electronics and Electrical Engineering in the USA, exploring related fields can open up diverse career opportunities. Many professionals complement their technical skills with a project manager bachelor degree to enhance their leadership and organizational capabilities in managing engineering projects effectively.

Working adults seeking to advance their qualifications often benefit from accelerated online degree programs for working adults. These programs offer flexible schedules and faster completion times, making it easier to balance study with professional commitments.

Additionally, interdisciplinary areas such as instructional design provide alternative pathways. Aspiring educators or trainers in technical fields might find pursuing the instructional design degree useful for developing training materials and educational technologies.

Many institutions now offer competency based programs tailored to demonstrate real-world skills rather than just credit hours. This approach is beneficial for students who want to showcase specific expertise aligned with industry needs.

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