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Electronics and Electrical Engineering

D-Index
43
Citations
6846
World Ranking
3931
National Ranking
64

Overview

Erh-Kun Lai is affiliated with Macronix International (Taiwan) and conducts research focused primarily in the fields of Materials Science and Engineering. Their work spans several subfields including Materials Chemistry, Electrical and Electronic Engineering, Clinical Psychology, Polymers and Plastics, and Electronic, Optical and Magnetic Materials.

Their research primarily investigates phase-change materials and chalcogenides, with topics covering:

  • Phase-change materials and chalcogenides
  • Chalcogenide Semiconductor Thin Films
  • Advanced Memory and Neural Computing
  • Transition Metal Oxide Nanomaterials
  • Perovskite Materials and Applications
  • Liquid Crystal Research Advancements
  • Quantum Dots Synthesis And Properties

Erh-Kun Lai has authored or coauthored several papers published in notable venues such as the IEEE International Electron Devices Meeting (IEDM), IEEE Electron Devices Technology & Manufacturing Conference (EDTM), Scientific Reports, and the IEEE International Reliability Physics Symposium (IRPS). Recent publications include:

  • Optimizing AsSeGe Chalcogenides by Dopants for Extremely Low IOFF, High Endurance and Low Vth Drift 3D Crosspoint Memory, 2021 IEEE International Electron Devices Meeting (IEDM), 2021
  • New Phase-Change Materials by Atomic-Level Engineering the Dopants for Extremely Low Vth Drift at 85 °C and High Endurance 3D Crosspoint Memory: IBM/Macronix PCRAM Joint Project, 2022 International Electron Devices Meeting (IEDM), 2022
  • Device Study on OTS-PCM for Persistent Memory Application: IBM/Macronix Phase Change Memory Joint Project, 2022 6th IEEE Electron Devices Technology & Manufacturing Conference (EDTM), 2022
  • A GexSe1-x switch-only-memory technology through polarized atomic distribution, Scientific Reports, 2024
  • Endurance Evaluation on OTS-PCM Device using Constant Current Stress Scheme, 2022 IEEE International Reliability Physics Symposium (IRPS), 2022

Their frequent collaborators include researchers Huai-Yu Cheng, Wei-Chih Chien, I. T. Kuo, Robert L. Bruce, and C. W. Yeh, demonstrating a history of collaborative work producing multiple coauthored papers.

Publication venues with recurrent appearances in Lai's portfolio are:

  • 2021 IEEE International Electron Devices Meeting (IEDM)
  • 2022 International Electron Devices Meeting (IEDM)
  • 2022 6th IEEE Electron Devices Technology & Manufacturing Conference (EDTM)
  • Scientific Reports
  • 2022 IEEE International Reliability Physics Symposium (IRPS)

Best Publications

  • Bridge resistance random access memory device with a singular contact structure

    ChiaHua Ho;Erh-Kun Lai;Kuang Yeu Hsieh

  • Programmable resistive RAM and manufacturing method

    ChiaHua Ho;Erh Kun Lai;Kuang Yeu Hsieh

  • Manufacturing Method for Phase Change RAM with Electrode Layer Process

    Erh Kun Lai;ChiaHua Ho;Yi Chou Chen;Kuang Yeu Hsieh

  • Methods of operating non-volatile memory cells having an oxide/nitride multilayer insulating structure

    Erh Kun Lai;Yen Hao Shih;Tzu Hsuan Hsu;Shih Chin Lee

  • Memory cell device and manufacturing method

    Erh-Kun Lai;ChiaHua Ho;Kuang Yeu Hsieh

  • Method of a multi-level cell resistance random access memory with metal oxides

    Erh-Kun Lai;ChiaHua Ho;Kuang Yeu Hsieh

  • BE-SONOS: A bandgap engineered SONOS with excellent performance and reliability

    Hang-Ting Lue;Szu-Yu Wang;Erh-Kun Lai;Yen-Hao Shih

  • Method for forming self-aligned thermal isolation cell for a variable resistance memory array

    Erh-Kun Lai;ChiaHua Ho;Kuang Yeu Hsieh

  • 3d memory array arranged for fn tunneling program and erase

    Hsiang-Lan Lung;Yen-Hao Shih;Erh-Kun Lai;Ming Hsiu Lee

  • Cell operation methods using gate-injection for floating gate nand flash memory

    Hang-Ting Lue;Tzu-Hsuan Hsu;Erh-Kun Lai

  • A Multi-Layer Stackable Thin-Film Transistor (TFT) NAND-Type Flash Memory

    Erh-Kun Lai;Hang-Ting Lue;Yi-Hsuan Hsiao;Jung-Yu Hsieh

  • Phase change materials and their application to random access memory technology

    Simone Raoux;Robert M. Shelby;Jean Jordan-Sweet;Becky Munoz

  • Structures and methods of a bistable resistive random access memory

    ChiaHua Ho;Erh-Kun Lai;Kuang Yeu Hsieh

  • Integrated circuit memory with single crystal silicon on silicide driver and manufacturing method

    Hsiang-Lan Lung;Erh-Kun Lai

  • Bridge resistance random access memory device and method with a singular contact structure

    ChiaHua Ho;Erh-Kun Lai;Kuang Yeu Hsieh

  • Unipolar Switching Behaviors of RTO $\hbox{WO}_{X}$ RRAM

    W.C. Chien;Y.C. Chen;E.K. Lai;Y.D. Yao

  • Study of sub-30nm thin film transistor (TFT) charge-trapping (CT) devices for 3D NAND flash application

    Tzu-Hsuan Hsu;Hang-Ting Lue;Chih-Chang Hsieh;Erh-Kun Lai

  • A Highly Reliable Self-Aligned Graded Oxide WO x Resistance Memory: Conduction Mechanisms and Reliability

    ChiaHua Ho;E.K. Lai;M.D. Lee;C.L. Pan

  • Method for manufacturing a resistor random access memory with a self-aligned air gap insulator

    Erh Kun Lai;ChiaHua Ho;Kuang Yeu Hsieh

  • Memory device manufacturing method with memory element having a metal-oxygen compound

    ChiaHua Ho;Erh-Kun Lai

Frequent Co-Authors

Hang-Ting Lue
Hang-Ting Lue Macronix International (Taiwan)
Chih-Yuan Lu
Chih-Yuan Lu Macronix International (Taiwan)
Hsiang-Lan Lung
Hsiang-Lan Lung Macronix International (Taiwan)
Simone Raoux
Simone Raoux Helmholtz-Zentrum Berlin für Materialien und Energie
Matthew J. Breitwisch
Matthew J. Breitwisch IBM (United States)
Sang-Bum Kim
Sang-Bum Kim Seoul National University
Bipin Rajendran
Bipin Rajendran King's College London
Ya-Chin King
Ya-Chin King National Tsing Hua University
Tseung-Yuen Tseng
Tseung-Yuen Tseng National Yang Ming Chiao Tung University
Christian Lavoie
Christian Lavoie IBM (United States)

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