Her scientific interests lie mostly in Phase-change memory, Optoelectronics, Electronic engineering, Amorphous solid and Crystallization. Her studies in Phase-change memory integrate themes in fields like Energy materials and Phase-change material. Her work deals with themes such as Nanotechnology and Memory cell, which intersect with Phase-change material.
Her Optoelectronics research is multidisciplinary, incorporating elements of Layer and Thin film. Simone Raoux has researched Amorphous solid in several fields, including Phase transition, Optical storage, Electrical resistivity and conductivity, Chemical engineering and Engineering physics. Her study in Crystallization is interdisciplinary in nature, drawing from both Crystallography, Microstructure, Phase and Doping.
Simone Raoux mainly investigates Crystallization, Phase-change memory, Amorphous solid, Thin film and Crystallography. Her Crystallization study incorporates themes from Phase, X-ray crystallography, Diffraction, Analytical chemistry and Laser. Her Phase-change memory study integrates concerns from other disciplines, such as Optoelectronics, Phase-change material and Electronic engineering.
Her work focuses on many connections between Phase-change material and other disciplines, such as Memory cell, that overlap with her field of interest in Integrated circuit. The study incorporates disciplines such as Chemical engineering, Optical storage, Germanium, Crystal and Engineering physics in addition to Amorphous solid. Simone Raoux has included themes like Condensed matter physics and Lithography in her Thin film study.
Crystallization, Condensed matter physics, Thin film, Amorphous solid and Crystallography are her primary areas of study. Her Crystallization research integrates issues from Annealing, Phase, Antimony and Analytical chemistry. Her study in the field of Sputter deposition is also linked to topics like State.
Her research integrates issues of Non-equilibrium thermodynamics, Transmission electron microscopy, Spins and Nucleation in her study of Amorphous solid. Her Crystallography research incorporates themes from Stress, Thermal stability, Diffraction and Reflectivity. Nanotechnology covers Simone Raoux research in Phase-change memory.
Her primary areas of study are Crystallization, Phase-change memory, Crystallography, Amorphous solid and Electronic engineering. Her Crystallization research includes themes of Chemical physics and Analytical chemistry. Her Phase-change memory research is multidisciplinary, relying on both Energy consumption, Electrical engineering, Fast switching and Data retention.
Simone Raoux focuses mostly in the field of Crystallography, narrowing it down to matters related to Phase and, in some cases, Thin film, Thermal stability and Doping. Simone Raoux interconnects Nanostructure, Transmission electron microscopy, Condensed matter physics and Nucleation in the investigation of issues within Amorphous solid. As part of her studies on Electronic engineering, Simone Raoux frequently links adjacent subjects like Efficient energy use.
This overview was generated by a machine learning system which analysed the scientist’s body of work. If you have any feedback, you can contact us here.
Monodisperse MFe2O4 (M = Fe, Co, Mn) Nanoparticles
Shouheng Sun;Hao Zeng;David B Robinson;Simone Raoux.
Journal of the American Chemical Society (2004)
Phase Change Memory
H P Wong;S Raoux;S Kim;J Liang.
Proceedings of the IEEE (2010)
Phase-change random access memory: a scalable technology
S. Raoux;G. W. Burr;M. J. Breitwisch;C. T. Rettner.
Ibm Journal of Research and Development (2008)
Phase change memory technology
Geoffrey W. Burr;Matthew J. Breitwisch;Michele Franceschini;Davide Garetto.
Journal of Vacuum Science & Technology B (2010)
Phase Change Materials and Their Application to Nonvolatile Memories
Simone Raoux;Wojciech Wełnic;Daniele Ielmini.
Chemical Reviews (2010)
Phase change materials and phase change memory
Simone Raoux;Feng Xiong;Matthias Wuttig;Eric Pop.
Mrs Bulletin (2014)
Phase Change Materials
Annual Review of Materials Research (2009)
Structure for confining the switching current in phase memory (PCM) cells
Geoffrey W. Burr;Chung Hon Lam;Simone Raoux;Stephen M. Rossnagel.
Novel One-Mask Self-Heating Pillar Phase Change Memory
T. Happ;M. Breitwisch;A. Schrott;J. Philipp.
symposium on vlsi technology (2006)
Ultra-Thin Phase-Change Bridge Memory Device Using GeSb
Y. C. Chen;C. T. Rettner;S. Raoux;G. W. Burr.
international electron devices meeting (2006)
If you think any of the details on this page are incorrect, let us know.
We appreciate your kind effort to assist us to improve this page, it would be helpful providing us with as much detail as possible in the text box below: