The chart shows the distribution of publications by all Research.com ranked scientists in the field of Materials Science in 2026. The highlighted bar marks where John R. Abelson sits on this spectrum.
This scientist: 253 publications — 47th percentile
47% of scientists in this discipline score the same or lower.
The last bar groups every scientist with 1,163 publications or more.
The chart shows the D-index (discipline H-index) distribution of Materials Science scientists ranked by Research.com in 2026. The highlighted bar marks where John R. Abelson sits on this spectrum.
This scientist: 46 D-Index — 12th percentile
12% of scientists in this discipline score the same or lower.
The last bar groups every scientist with 165 D-Index or more.
John R. Abelson is affiliated with the University of Illinois at Urbana-Champaign in the United States. Their research focuses primarily on engineering and materials science, with significant contributions in electrical and electronic engineering, materials chemistry, and related subfields such as electronic, optical, and magnetic materials, mechanics of materials, and catalysis.
The main topics covered in their work include semiconductor materials and devices, copper interconnects and reliability, molecular junctions and nanostructures, metal and thin film mechanics, advancements in semiconductor devices and circuit design, electronic and structural properties of oxides, and ZnO doping and properties.
John R. Abelson's notable recent publications include:
The frequent coauthors who have collaborated with John R. Abelson include:
Their works are frequently published in venues such as:
John R. Abelson's research covers a broad spectrum within semiconductor technology and thin film deposition, with a particular emphasis on chemical vapor deposition methods and thin film mechanics. Their research outputs contribute to understanding and advancing materials used in semiconductor devices and nanoscale structures.
David G Cahill;M. Katiyar;John R Abelson
Bong Sub Lee;John R Abelson;Stephen G. Bishop;Dae Hwan Kang
Ho Ki Lyeo;Ho Ki Lyeo;David G. Cahill;Bong Sub Lee;John R. Abelson
Kevin A. Arpin;Mark D. Losego;Andrew N. Cloud;Hailong Ning
I. Petrov;A. Myers;J. E. Greene;John R Abelson
Bong Sub Lee;Geoffrey W. Burr;Robert M. Shelby;Simone Raoux
Gregory S. Girolami;Do Young Kim;John R. Abelson;Navneet Kumar
Junghwan Sung;Dean M. Goedde;Gregory S. Girolami;John R. Abelson
John R Abelson
Hyun Chul Jin;John R. Abelson;Martin K. Erhardt;Ralph G. Nuzzo
M. Pinarbasi;N. Maley;A. Myers;John R Abelson
P. M. Voyles;P. M. Voyles;J. E. Gerbi;M. M. J. Treacy;J. M. Gibson
Paul M. Voyles;John R. Abelson
A. Nuruddin;John R Abelson
Sreenivas Jayaraman;Yu Yang;Do Young Kim;Gregory S. Girolami
John R. Abelson;Ki Bum Kim;Douglas E. Mercer;C. Robert Helms
S. Jayaraman;S. Jayaraman;J.E. Gerbi;J.E. Gerbi;Y. Yang;Y. Yang;D.Y. Kim;D.Y. Kim
J. M. Gibson;M. M.J. Treacy;P. M. Voyles;H. C. Jin
Gilles de Rosny;Earl R. Mosburg;John R. Abelson;Genevieve Devaud
Ho Soon Yang;David G. Cahill;X. Liu;J. L. Feldman
John R. Abelson;Thomas W. Sigmon;Ki Bum Kim;Kurt H. Weiner
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