Van de Mcm Richard Sanden mostly deals with Atomic layer deposition, Analytical chemistry, Passivation, Silicon and Thin film. His Atomic layer deposition research is multidisciplinary, incorporating elements of Inorganic chemistry, Substrate, Tin and Deposition. His study looks at the intersection of Substrate and topics like Remote plasma with Miniaturization.
His biological study focuses on Infrared spectroscopy. His studies in Passivation integrate themes in fields like Optoelectronics, Annealing, Crystalline silicon and Thermal stability. His Silicon study incorporates themes from Hydrogen, Amorphous silicon and Dielectric.
The scientist’s investigation covers issues in Analytical chemistry, Silicon, Thin film, Optoelectronics and Atomic physics. His study in Analytical chemistry is interdisciplinary in nature, drawing from both Amorphous solid, Hydrogen, Substrate and Atomic layer deposition. Van de Mcm Richard Sanden interconnects Inorganic chemistry, Nucleation, Tin and Remote plasma in the investigation of issues within Atomic layer deposition.
His research in Silicon intersects with topics in Chemical vapor deposition, Silane, Amorphous silicon, Nanocrystalline silicon and Infrared spectroscopy. The Optoelectronics study combines topics in areas such as Layer, Passivation and Thermal. His Atomic physics research incorporates elements of Ion, Electron density and Emission spectrum.
His scientific interests lie mostly in Analytical chemistry, Atomic layer deposition, Thin film, Optoelectronics and Silicon. Van de Mcm Richard Sanden has researched Analytical chemistry in several fields, including Ellipsometry, Chemical vapor deposition, Dielectric and Nucleation. His Atomic layer deposition research incorporates themes from Inorganic chemistry, Passivation, Tin, Substrate and Remote plasma.
The study incorporates disciplines such as Amorphous solid, Hydrogen, Ion and Deposition in addition to Thin film. His biological study spans a wide range of topics, including Layer, Nanocrystalline silicon and Graphene. His work investigates the relationship between Silicon and topics such as Amorphous silicon that intersect with problems in Chemical physics.
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Plasma-Assisted Atomic Layer Deposition: Basics, Opportunities, and Challenges
HB Harald Profijt;SE Stephen Potts;van de Mcm Richard Sanden;Wmm Erwin Kessels.
Journal of Vacuum Science and Technology (2011)
Ultralow surface recombination of c-Si substrates passivated by plasma-assisted atomic layer deposited Al2O3
B Bram Hoex;Sbs Stephan Heil;E Erik Langereis;van de Mcm Richard Sanden.
Applied Physics Letters (2006)
On the c-Si surface passivation mechanism by the negative-charge-dielectric Al2O3
B Bram Hoex;Jjh Joost Gielis;van de Mcm Richard Sanden;Wmm Erwin Kessels.
Journal of Applied Physics (2008)
Silicon surface passivation by atomic layer deposited Al2O3
B Bram Hoex;J Jeroen Schmidt;P Pohl;van de Mcm Richard Sanden.
Journal of Applied Physics (2008)
Surface passivation of high‐efficiency silicon solar cells by atomic‐layer‐deposited Al2O3
J Jeroen Schmidt;A Merkle;R Brendel;B Bram Hoex.
Progress in Photovoltaics (2008)
Excellent passivation of highly doped p-type Si surfaces by the negative-charge-dielectric Al2O3
B Bram Hoex;J Jeroen Schmidt;R Bock;PP Altermatt.
Applied Physics Letters (2007)
X-Ray photoelectron spectroscopy reference data for identification of the C3N4 phase in carbon–nitrogen films
AP Dementjev;de A Ariël Graaf;van de Mcm Richard Sanden;KI Maslakov.
Diamond and Related Materials (2000)
Determining the material structure of microcrystalline silicon from Raman spectra
C Chiel Smit;van Racmm René Swaaij;H Donker;Amhn Petit.
Journal of Applied Physics (2003)
Optical constants of graphene measured by spectroscopic ellipsometry
JW Jan-Willem Weber;VE Calado;van de Mcm Richard Sanden.
Applied Physics Letters (2010)
In situ spectroscopic ellipsometry as a versatile tool for studying atomic layer deposition
E Erik Langereis;Sbs Stephan Heil;Hcm Harm Knoops;W Wytze Keuning.
Journal of Physics D (2009)
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