World's Best Scientists 2026 revealed!

D-Index & Metrics

Materials Science

D-Index
73
Citations
19460
World Ranking
3847
National Ranking
51

van de Mcm Richard Sanden publication distribution in Materials Science in 2026

The chart shows the distribution of publications by all Research.com ranked scientists in the field of Materials Science in 2026. The highlighted bar marks where van de Mcm Richard Sanden sits on this spectrum.

50–69 publications: 28 scientists 70–89 publications: 152 scientists 90–109 publications: 356 scientists 110–129 publications: 487 scientists 130–149 publications: 723 scientists 150–169 publications: 835 scientists 170–189 publications: 850 scientists 190–209 publications: 891 scientists 210–229 publications: 862 scientists 230–249 publications: 766 scientists 250–269 publications: 726 scientists 270–289 publications: 665 scientists 290–309 publications: 593 scientists 310–329 publications: 537 scientists 330–349 publications: 477 scientists 350–369 publications: 440 scientists 370–389 publications: 356 scientists 390–409 publications: 321 scientists 410–429 publications: 256 scientists 430–449 publications: 246 scientists 450–469 publications: 216 scientists 470–489 publications: 212 scientists 490–509 publications: 174 scientists 510–529 publications: 194 scientists 530–549 publications: 162 scientists 550–569 publications: 131 scientists 570–589 publications: 111 scientists 590–609 publications: 103 scientists 610–629 publications: 99 scientists 630–649 publications: 77 scientists 650–669 publications: 92 scientists 670–689 publications: 56 scientists 690–709 publications: 53 scientists 710–729 publications: 53 scientists 730–749 publications: 38 scientists 750–769 publications: 52 scientists 770–789 publications: 43 scientists 790–809 publications: 38 scientists 810–829 publications: 34 scientists 830–849 publications: 25 scientists 850–869 publications: 18 scientists 870–889 publications: 20 scientists 890–909 publications: 24 scientists 910–929 publications: 27 scientists 930–949 publications: 20 scientists 950–969 publications: 17 scientists 970–989 publications: 10 scientists 990–1,009 publications: 16 scientists 1,010–1,029 publications: 13 scientists 1,030–1,049 publications: 12 scientists 1,050–1,069 publications: 9 scientists 1,070–1,089 publications: 8 scientists 1,090–1,109 publications: 7 scientists 1,110–1,129 publications: 9 scientists 1,130–1,149 publications: 2 scientists 1,150–1,162 publications: 5 scientists 1,163+ publications: 100 scientists
50 publications 1,163+

This scientist: 447 publications — 82nd percentile

82% of scientists in this discipline score the same or lower.

The last bar groups every scientist with 1,163 publications or more.

van de Mcm Richard Sanden D-index placement in Materials Science in 2026

The chart shows the D-index (discipline H-index) distribution of Materials Science scientists ranked by Research.com in 2026. The highlighted bar marks where van de Mcm Richard Sanden sits on this spectrum.

40–41 D-Index: 211 scientists 42–43 D-Index: 450 scientists 44–45 D-Index: 612 scientists 46–47 D-Index: 612 scientists 48–49 D-Index: 598 scientists 50–51 D-Index: 657 scientists 52–53 D-Index: 667 scientists 54–55 D-Index: 621 scientists 56–57 D-Index: 597 scientists 58–59 D-Index: 610 scientists 60–61 D-Index: 587 scientists 62–63 D-Index: 606 scientists 64–65 D-Index: 533 scientists 66–67 D-Index: 490 scientists 68–69 D-Index: 469 scientists 70–71 D-Index: 378 scientists 72–73 D-Index: 421 scientists 74–75 D-Index: 359 scientists 76–77 D-Index: 323 scientists 78–79 D-Index: 299 scientists 80–81 D-Index: 230 scientists 82–83 D-Index: 210 scientists 84–85 D-Index: 195 scientists 86–87 D-Index: 203 scientists 88–89 D-Index: 175 scientists 90–91 D-Index: 175 scientists 92–93 D-Index: 142 scientists 94–95 D-Index: 121 scientists 96–97 D-Index: 117 scientists 98–99 D-Index: 107 scientists 100–101 D-Index: 88 scientists 102–103 D-Index: 85 scientists 104–105 D-Index: 68 scientists 106–107 D-Index: 62 scientists 108–109 D-Index: 57 scientists 110–111 D-Index: 45 scientists 112–113 D-Index: 49 scientists 114–115 D-Index: 50 scientists 116–117 D-Index: 34 scientists 118–119 D-Index: 38 scientists 120–121 D-Index: 37 scientists 122–123 D-Index: 29 scientists 124–125 D-Index: 28 scientists 126–127 D-Index: 24 scientists 128–129 D-Index: 33 scientists 130–131 D-Index: 28 scientists 132–133 D-Index: 21 scientists 134–135 D-Index: 20 scientists 136–137 D-Index: 23 scientists 138–139 D-Index: 17 scientists 140–141 D-Index: 12 scientists 142–143 D-Index: 17 scientists 144–145 D-Index: 21 scientists 146–147 D-Index: 13 scientists 148–149 D-Index: 11 scientists 150–151 D-Index: 14 scientists 152–153 D-Index: 13 scientists 154–155 D-Index: 9 scientists 156–157 D-Index: 10 scientists 158–159 D-Index: 7 scientists 160–161 D-Index: 4 scientists 162–163 D-Index: 4 scientists 164 D-Index: 3 scientists 165+ D-Index: 98 scientists
40 D-Index 165+

This scientist: 73 D-Index — 71st percentile

71% of scientists in this discipline score the same or lower.

The last bar groups every scientist with 165 D-Index or more.

Overview

van de Mcm Richard Sanden is affiliated with Eindhoven University of Technology in the Netherlands. Their research spans multiple domains primarily within engineering and materials science, with a strong focus on plasma science and catalysis.

Their recent publications reflect active engagement in various aspects of plasma technology and catalytic materials. Notable papers include:

  • The 2022 Plasma Roadmap: low temperature plasma science and technology (2022, Journal of Physics D Applied Physics)
  • Plasma Activated Electrochemical Ammonia Synthesis from Nitrogen and Water (2020, ACS Energy Letters)
  • Electrochemical Activation of Atomic Layer-Deposited Cobalt Phosphate Electrocatalysts for Water Oxidation (2021, ACS Catalysis)
  • Observation and rationalization of nitrogen oxidation enabled only by coupled plasma and catalyst (2022, Nature Communications)
  • CO2 Conversion in Nonuniform Discharges: Disentangling Dissociation and Recombination Mechanisms (2020, The Journal of Physical Chemistry C)

The researcher has collaborated frequently with several co-authors, including Mihalis N. Tsampas, F J J Peeters, S. Welzel, W.A. Bongers, and Alex van de Steeg.

Their work has been published in venues where they have multiple contributions, such as:

  • Zenodo (CERN European Organization for Nuclear Research)
  • Plasma Sources Science and Technology
  • Journal of Physics D Applied Physics
  • ECS Meeting Abstracts
  • SSRN Electronic Journal

The main fields of study span engineering and materials science, with subfields that include materials chemistry, electrical and electronic engineering, radiology, nuclear medicine and imaging, renewable energy, sustainability and the environment, and catalysis.

Core topics of their research encompass:

  • Plasma Applications and Diagnostics
  • Plasma Diagnostics and Applications
  • Catalytic Processes in Materials Science
  • Advancements in Solid Oxide Fuel Cells
  • Ammonia Synthesis and Nitrogen Reduction
  • Electrocatalysts for Energy Conversion
  • Catalysts for Methane Reforming

Best Publications

  • Plasma-Assisted Atomic Layer Deposition: Basics, Opportunities, and Challenges

    HB Harald Profijt;SE Stephen Potts;van de Mcm Richard Sanden;Wmm Erwin Kessels

  • Ultralow surface recombination of c-Si substrates passivated by plasma-assisted atomic layer deposited Al2O3

    B Bram Hoex;Sbs Stephan Heil;E Erik Langereis;van de Mcm Richard Sanden

  • On the c-Si surface passivation mechanism by the negative-charge-dielectric Al2O3

    B Bram Hoex;Jjh Joost Gielis;van de Mcm Richard Sanden;Wmm Erwin Kessels

  • Silicon surface passivation by atomic layer deposited Al2O3

    B Bram Hoex;J Jeroen Schmidt;P Pohl;van de Mcm Richard Sanden

  • Surface passivation of high‐efficiency silicon solar cells by atomic‐layer‐deposited Al2O3

    J Jeroen Schmidt;A Merkle;R Brendel;B Bram Hoex

  • X-Ray photoelectron spectroscopy reference data for identification of the C3N4 phase in carbon–nitrogen films

    AP Dementjev;de A Ariël Graaf;van de Mcm Richard Sanden;KI Maslakov

  • Excellent passivation of highly doped p-type Si surfaces by the negative-charge-dielectric Al2O3

    B Bram Hoex;J Jeroen Schmidt;R Bock;PP Altermatt

  • Optical constants of graphene measured by spectroscopic ellipsometry

    JW Jan-Willem Weber;VE Calado;van de Mcm Richard Sanden

  • Determining the material structure of microcrystalline silicon from Raman spectra

    C Chiel Smit;van Racmm René Swaaij;H Donker;Amhn Petit

  • In situ spectroscopic ellipsometry as a versatile tool for studying atomic layer deposition

    E Erik Langereis;Sbs Stephan Heil;Hcm Harm Knoops;W Wytze Keuning

  • Plasma and thermal ALD of Al2O3 in a commercial 200 mm ALD reactor

    van Jl Hans Hemmen;Sbs Stephan Heil;JH Klootwijk;F Fred Roozeboom

  • Vacancies and voids in hydrogenated amorphous silicon

    Ahm Arno Smets;Wmm Erwin Kessels;van de Mcm Richard Sanden

  • Low temperature plasma-enhanced atomic layer deposition of metal oxide thin films

    SE Stephen Potts;W Wytze Keuning;E Erik Langereis;G Gijs Dingemans

  • Influence of the Deposition Temperature on the c-Si Surface Passivation by Al2O3 Films Synthesized by ALD and PECVD

    G Gijs Dingemans;van de Mcm Richard Sanden;Wmm Erwin Kessels

  • Silicon surface passivation by ultrathin Al2O3 films synthesized by thermal and plasma atomic layer deposition

    G Gijs Dingemans;R Seguin;P Engelhart;van de Mcm Richard Sanden

  • Hydrogen induced passivation of Si interfaces by Al2O3 films and SiO2/Al2O3 stacks

    G Gijs Dingemans;W Beyer;van de Mcm Richard Sanden;Wmm Erwin Kessels

  • Optical emission spectroscopy as a tool for studying, optimizing, and monitoring plasma-assisted atomic layer deposition processes

    Ajm Adrie Mackus;Sbs Stephan Heil;E Erik Langereis;Hcm Harm Knoops

  • Conformality of Plasma-Assisted ALD: Physical Processes and Modeling

    Hcm Harm Knoops;E Erik Langereis;van de Mcm Richard Sanden;Wmm Erwin Kessels

  • Influence of the Oxidant on the Chemical and Field-Effect Passivation of Si by ALD Al2O3

    G Gijs Dingemans;NM Nick Terlinden;D Pierreux;HB Harald Profijt

  • Negative charge and charging dynamics in Al2O3 films on Si characterized by second-harmonic generation

    Jjh Joost Gielis;B Bram Hoex;van de Mcm Richard Sanden;Wmm Erwin Kessels

Frequent Co-Authors

Wmm Erwin Kessels
Wmm Erwin Kessels Eindhoven University of Technology
Bram Hoex
Bram Hoex University of New South Wales
Fred Roozeboom
Fred Roozeboom University of Twente
Phl Peter Notten
Phl Peter Notten Eindhoven University of Technology
Bernd Rech
Bernd Rech Helmholtz-Zentrum Berlin für Materialien und Energie
Miro Zeman
Miro Zeman Delft University of Technology
Ruud E. I. Schropp
Ruud E. I. Schropp Jinan University
Jan Schmidt
Jan Schmidt University of Hannover
Eray S. Aydil
Eray S. Aydil New York University
Annemie Bogaerts
Annemie Bogaerts University of Antwerp

If you think any of the details on this page are incorrect, let us know.

Report an issue

We appreciate your kind effort to assist us to improve this page, it would be helpful providing us with as much detail as possible in the text box below:

Best Scientists Citing van de Mcm Richard Sanden

Trending Scientists

Recently Published Articles