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Materials Science

D-Index
57
Citations
10933
World Ranking
7999
National Ranking
102

Overview

Fred Roozeboom is affiliated with the University of Twente in the Netherlands and has contributed extensively to research in engineering and materials science. Their scholarship primarily focuses on electrical and electronic engineering as well as materials chemistry. Roozeboom's work spans several subfields including water science and technology, mechanics of materials, and condensed matter physics.

The scientist's research interests cover a range of topics related to semiconductor materials and devices, electronic and structural properties of oxides, and catalytic processes in materials science. Additional topics include membrane separation technologies, ZnO doping and properties, diamond and carbon-based materials research, and thin-film transistor technologies.

Roozeboom has a significant publication record that includes contributions to various academic journals and conference proceedings. Notable recent papers include:

  • "High-Throughput Area-Selective Spatial Atomic Layer Deposition of SiO2 with Interleaved Small Molecule Inhibitors and Integrated Back-Etch Correction for Low Defectivity," 2023, Advanced Materials
  • "Atmospheric-pressure atomic layer deposition: recent applications and new emerging applications in high-porosity/3D materials," 2023, Dalton Transactions
  • "Atmospheric-Pressure Plasma-Enhanced Spatial ALD of SiO2 Studied by Gas-Phase Infrared and Optical Emission Spectroscopy," 2021, The Journal of Physical Chemistry C
  • "Unfolding an Elusive Area-Selective Deposition Process: Atomic Layer Deposition of TiO2 and TiON on SiN vs SiO2," 2024, ACS Applied Materials & Interfaces
  • "Tuning Nanopores in Tubular Ceramic Nanofiltration Membranes with Atmospheric-Pressure Atomic Layer Deposition: Prospects for Pressure-Based In-Line Monitoring of Pore Narrowing," 2024, Separations

Key frequent co-authors in their research include Alfredo Mameli, Michiel Nijboer, Alexey Y. Kovalgin, Arian Nijmeijer, and Mieke W.J. Luiten-Olieman. These collaborations have contributed to advancing studies related to atomic layer deposition and materials engineering.

Roozeboom's work has been published repeatedly in several venues, with a particular emphasis on ECS Meeting Abstracts, where they have 11 publications. Other notable venues include Atomic Layer Deposition, Advanced Materials, Dalton Transactions, and The Journal of Physical Chemistry C.

Best Publications

  • VANADIUM OXIDE MONOLAYER CATALYSTS. 3. A RAMAN SPECTROSCOPIC AND TEMPERATURE-PROGRAMMED REDUCTION STUDY OF MONOLAYER AND CRYSTAL-TYPE VANADIA ON VARIOUS SUPPORTS

    F. Roozeboom;M. C. Mittelmeijer-Hazeleger;J. A. Moulijn;J. Medema

  • Spatial atomic layer deposition: A route towards further industrialization of atomic layer deposition

    Paul Poodt;David C. Cameron;Eric Dickey;Steven M. George

  • 3‐D Integrated All‐Solid‐State Rechargeable Batteries

    Phl Peter Notten;Phl Peter Notten;F Fred Roozeboom;F Fred Roozeboom;Rah Rogier Niessen;L Loïc Baggetto

  • High Energy Density All-Solid-State Batteries: A Challenging Concept Towards 3D Integration**

    L Loïc Baggetto;Rah Rogier Niessen;F Fred Roozeboom;F Fred Roozeboom;Phl Peter Notten;Phl Peter Notten

  • ENERGETICS OF SELF-INTERSTITIAL CLUSTERS IN SI

    N. E. B. Cowern;G. Mannino;P. A. Stolk;F. Roozeboom

  • High-Speed Spatial Atomic-Layer Deposition of Aluminum Oxide Layers for Solar Cell Passivation

    P. Paul Poodt;Am Adriaan Lankhorst;F. Fred Roozeboom;K. Karel Spee

  • Plasma and thermal ALD of Al2O3 in a commercial 200 mm ALD reactor

    van Jl Hans Hemmen;Sbs Stephan Heil;JH Klootwijk;F Fred Roozeboom

  • Method and apparatus for depositing atomic layers on a substrate

    Adrianus Johannes Petrus Maria Vermeer;Freddy Roozeboom;Deelen Joop Van

  • Area-Selective Atomic Layer Deposition of SiO2 Using Acetylacetone as a Chemoselective Inhibitor in an ABC-Type Cycle

    Alfredo Mameli;Marc J M Merkx;Bora Karasulu;Fred Roozeboom

  • Ultrahigh Capacitance Density for Multiple ALD-Grown MIM Capacitor Stacks in 3-D Silicon

    J.H. Klootwijk;K.B. Jinesh;W. Dekkers;J.F. Verhoeven

  • Deposition of TiN and HfO{sub 2} in a commercial 200 mm remote plasma atomic layer deposition reactor

    Sbs Stephan Heil;van Jl Hans Hemmen;CJ Hodson;N Singh

  • Atomic Layer Etching: What Can We Learn from Atomic Layer Deposition?

    T Tahsin Faraz;F Fred Roozeboom;Hcm Harm Knoops;Wmm Erwin Kessels

  • Rapid thermal processing systems: A review with emphasis on temperature control

    Fred Roozeboom;N. Parekh

  • Ferromagnetic resonance and eddy currents in high-permeable thin films

    E. van de Riet;F. Roozeboom

  • Low-Temperature Deposition of TiN by Plasma-Assisted Atomic Layer Deposition

    Sbs Stephan Heil;E Erik Langereis;F Fred Roozeboom;van de Mcm Richard Sanden

  • Spatial atomic layer deposition of zinc oxide thin films

    A Andrea Illiberi;F Fred Roozeboom;F Fred Roozeboom;P Poodt

  • Deposition of TiN and TaN by Remote Plasma ALD for Cu and Li Diffusion Barrier Applications

    Hcm Harm Knoops;L Loïc Baggetto;E Erik Langereis;van de Mcm Richard Sanden

  • Thermally assisted reversal of exchange biasing in NiO and FeMn based systems

    P. A. A. van der Heijden;T. F. M. M. Maas;W. J. M. de Jonge;J. C. S. Kools

  • Review Article: Recommended reading list of early publications on atomic layer deposition—Outcome of the “Virtual Project on the History of ALD”

    Esko Ahvenniemi;Andrew R. Akbashev;Saima Ali;Mikhael Bechelany

  • Electronic device, assembly and methods of manufacturing an electronic device

    Freddy Roozeboom;Adrianus A. J. Buijsman;Patrice Gamand;Antonius L. A. M. Kemmeren

  • Vanadium oxide monolayer catalysts. I. Preparation, characterization, and thermal stability

    Unknown

Frequent Co-Authors

Wmm Erwin Kessels
Wmm Erwin Kessels Eindhoven University of Technology
Wilhelmus M. M. Kessels
Wilhelmus M. M. Kessels Eindhoven University of Technology
Marcel A. Verheijen
Marcel A. Verheijen Eindhoven University of Technology
van de Mcm Richard Sanden
van de Mcm Richard Sanden Eindhoven University of Technology
Jeffrey W. Elam
Jeffrey W. Elam Argonne National Laboratory
Phl Peter Notten
Phl Peter Notten Eindhoven University of Technology
J. Ruud van Ommen
J. Ruud van Ommen Delft University of Technology
Robin H. A. Ras
Robin H. A. Ras Aalto University
Stacey F. Bent
Stacey F. Bent Stanford University
Pasqualina M. Sarro
Pasqualina M. Sarro Delft University of Technology

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