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D-Index & Metrics

Materials Science

D-Index
75
Citations
19268
World Ranking
3477
National Ranking
48

Wmm Erwin Kessels publication distribution in Materials Science in 2026

The chart shows the distribution of publications by all Research.com ranked scientists in the field of Materials Science in 2026. The highlighted bar marks where Wmm Erwin Kessels sits on this spectrum.

50–69 publications: 28 scientists 70–89 publications: 152 scientists 90–109 publications: 356 scientists 110–129 publications: 487 scientists 130–149 publications: 723 scientists 150–169 publications: 835 scientists 170–189 publications: 850 scientists 190–209 publications: 891 scientists 210–229 publications: 862 scientists 230–249 publications: 766 scientists 250–269 publications: 726 scientists 270–289 publications: 665 scientists 290–309 publications: 593 scientists 310–329 publications: 537 scientists 330–349 publications: 477 scientists 350–369 publications: 440 scientists 370–389 publications: 356 scientists 390–409 publications: 321 scientists 410–429 publications: 256 scientists 430–449 publications: 246 scientists 450–469 publications: 216 scientists 470–489 publications: 212 scientists 490–509 publications: 174 scientists 510–529 publications: 194 scientists 530–549 publications: 162 scientists 550–569 publications: 131 scientists 570–589 publications: 111 scientists 590–609 publications: 103 scientists 610–629 publications: 99 scientists 630–649 publications: 77 scientists 650–669 publications: 92 scientists 670–689 publications: 56 scientists 690–709 publications: 53 scientists 710–729 publications: 53 scientists 730–749 publications: 38 scientists 750–769 publications: 52 scientists 770–789 publications: 43 scientists 790–809 publications: 38 scientists 810–829 publications: 34 scientists 830–849 publications: 25 scientists 850–869 publications: 18 scientists 870–889 publications: 20 scientists 890–909 publications: 24 scientists 910–929 publications: 27 scientists 930–949 publications: 20 scientists 950–969 publications: 17 scientists 970–989 publications: 10 scientists 990–1,009 publications: 16 scientists 1,010–1,029 publications: 13 scientists 1,030–1,049 publications: 12 scientists 1,050–1,069 publications: 9 scientists 1,070–1,089 publications: 8 scientists 1,090–1,109 publications: 7 scientists 1,110–1,129 publications: 9 scientists 1,130–1,149 publications: 2 scientists 1,150–1,162 publications: 5 scientists 1,163+ publications: 100 scientists
50 publications 1,163+

This scientist: 308 publications — 62nd percentile

62% of scientists in this discipline score the same or lower.

The last bar groups every scientist with 1,163 publications or more.

Wmm Erwin Kessels D-index placement in Materials Science in 2026

The chart shows the D-index (discipline H-index) distribution of Materials Science scientists ranked by Research.com in 2026. The highlighted bar marks where Wmm Erwin Kessels sits on this spectrum.

40–41 D-Index: 211 scientists 42–43 D-Index: 450 scientists 44–45 D-Index: 612 scientists 46–47 D-Index: 612 scientists 48–49 D-Index: 598 scientists 50–51 D-Index: 657 scientists 52–53 D-Index: 667 scientists 54–55 D-Index: 621 scientists 56–57 D-Index: 597 scientists 58–59 D-Index: 610 scientists 60–61 D-Index: 587 scientists 62–63 D-Index: 606 scientists 64–65 D-Index: 533 scientists 66–67 D-Index: 490 scientists 68–69 D-Index: 469 scientists 70–71 D-Index: 378 scientists 72–73 D-Index: 421 scientists 74–75 D-Index: 359 scientists 76–77 D-Index: 323 scientists 78–79 D-Index: 299 scientists 80–81 D-Index: 230 scientists 82–83 D-Index: 210 scientists 84–85 D-Index: 195 scientists 86–87 D-Index: 203 scientists 88–89 D-Index: 175 scientists 90–91 D-Index: 175 scientists 92–93 D-Index: 142 scientists 94–95 D-Index: 121 scientists 96–97 D-Index: 117 scientists 98–99 D-Index: 107 scientists 100–101 D-Index: 88 scientists 102–103 D-Index: 85 scientists 104–105 D-Index: 68 scientists 106–107 D-Index: 62 scientists 108–109 D-Index: 57 scientists 110–111 D-Index: 45 scientists 112–113 D-Index: 49 scientists 114–115 D-Index: 50 scientists 116–117 D-Index: 34 scientists 118–119 D-Index: 38 scientists 120–121 D-Index: 37 scientists 122–123 D-Index: 29 scientists 124–125 D-Index: 28 scientists 126–127 D-Index: 24 scientists 128–129 D-Index: 33 scientists 130–131 D-Index: 28 scientists 132–133 D-Index: 21 scientists 134–135 D-Index: 20 scientists 136–137 D-Index: 23 scientists 138–139 D-Index: 17 scientists 140–141 D-Index: 12 scientists 142–143 D-Index: 17 scientists 144–145 D-Index: 21 scientists 146–147 D-Index: 13 scientists 148–149 D-Index: 11 scientists 150–151 D-Index: 14 scientists 152–153 D-Index: 13 scientists 154–155 D-Index: 9 scientists 156–157 D-Index: 10 scientists 158–159 D-Index: 7 scientists 160–161 D-Index: 4 scientists 162–163 D-Index: 4 scientists 164 D-Index: 3 scientists 165+ D-Index: 98 scientists
40 D-Index 165+

This scientist: 75 D-Index — 74th percentile

74% of scientists in this discipline score the same or lower.

The last bar groups every scientist with 165 D-Index or more.

Overview

Wmm Erwin Kessels is affiliated with Eindhoven University of Technology in the Netherlands. Their academic profile reflects a focus on scientific research conducted within this institution.

There are no recent papers, frequent co-authors, publication venues, book publications, or detailed fields of study available in the source data for Wmm Erwin Kessels. Similarly, no information on main topics of work, awards, or subfields of study has been provided.

Given the available data, Wmm Erwin Kessels' profile is characterized mainly by their primary institutional affiliation.

Best Publications

  • Plasma-Assisted Atomic Layer Deposition: Basics, Opportunities, and Challenges

    HB Harald Profijt;SE Stephen Potts;van de Mcm Richard Sanden;Wmm Erwin Kessels

  • Ultralow surface recombination of c-Si substrates passivated by plasma-assisted atomic layer deposited Al2O3

    B Bram Hoex;Sbs Stephan Heil;E Erik Langereis;van de Mcm Richard Sanden

  • Status and prospects of Al2O3-based surface passivation schemes for silicon solar cells

    G Gijs Dingemans;Wmm Erwin Kessels

  • On the c-Si surface passivation mechanism by the negative-charge-dielectric Al2O3

    B Bram Hoex;Jjh Joost Gielis;van de Mcm Richard Sanden;Wmm Erwin Kessels

  • Silicon surface passivation by atomic layer deposited Al2O3

    B Bram Hoex;J Jeroen Schmidt;P Pohl;van de Mcm Richard Sanden

  • Surface passivation of high‐efficiency silicon solar cells by atomic‐layer‐deposited Al2O3

    J Jeroen Schmidt;A Merkle;R Brendel;B Bram Hoex

  • Excellent passivation of highly doped p-type Si surfaces by the negative-charge-dielectric Al2O3

    B Bram Hoex;J Jeroen Schmidt;R Bock;PP Altermatt

  • Determining the material structure of microcrystalline silicon from Raman spectra

    C Chiel Smit;van Racmm René Swaaij;H Donker;Amhn Petit

  • The use of atomic layer deposition in advanced nanopatterning

    Ajm Adrie Mackus;AA Ageeth Bol;Wmm Erwin Kessels

  • In situ spectroscopic ellipsometry as a versatile tool for studying atomic layer deposition

    E Erik Langereis;Sbs Stephan Heil;Hcm Harm Knoops;W Wytze Keuning

  • Plasma and thermal ALD of Al2O3 in a commercial 200 mm ALD reactor

    van Jl Hans Hemmen;Sbs Stephan Heil;JH Klootwijk;F Fred Roozeboom

  • Vacancies and voids in hydrogenated amorphous silicon

    Ahm Arno Smets;Wmm Erwin Kessels;van de Mcm Richard Sanden

  • Low temperature plasma-enhanced atomic layer deposition of metal oxide thin films

    SE Stephen Potts;W Wytze Keuning;E Erik Langereis;G Gijs Dingemans

  • Influence of the Deposition Temperature on the c-Si Surface Passivation by Al2O3 Films Synthesized by ALD and PECVD

    G Gijs Dingemans;van de Mcm Richard Sanden;Wmm Erwin Kessels

  • Silicon surface passivation by ultrathin Al2O3 films synthesized by thermal and plasma atomic layer deposition

    G Gijs Dingemans;R Seguin;P Engelhart;van de Mcm Richard Sanden

  • Hydrogen induced passivation of Si interfaces by Al2O3 films and SiO2/Al2O3 stacks

    G Gijs Dingemans;W Beyer;van de Mcm Richard Sanden;Wmm Erwin Kessels

  • Optical emission spectroscopy as a tool for studying, optimizing, and monitoring plasma-assisted atomic layer deposition processes

    Ajm Adrie Mackus;Sbs Stephan Heil;E Erik Langereis;Hcm Harm Knoops

  • Conformality of Plasma-Assisted ALD: Physical Processes and Modeling

    Hcm Harm Knoops;E Erik Langereis;van de Mcm Richard Sanden;Wmm Erwin Kessels

  • Influence of the Oxidant on the Chemical and Field-Effect Passivation of Si by ALD Al2O3

    G Gijs Dingemans;NM Nick Terlinden;D Pierreux;HB Harald Profijt

  • Negative charge and charging dynamics in Al2O3 films on Si characterized by second-harmonic generation

    Jjh Joost Gielis;B Bram Hoex;van de Mcm Richard Sanden;Wmm Erwin Kessels

Frequent Co-Authors

van de Mcm Richard Sanden
van de Mcm Richard Sanden Eindhoven University of Technology
Fred Roozeboom
Fred Roozeboom University of Twente
Bram Hoex
Bram Hoex University of New South Wales
Marcel A. Verheijen
Marcel A. Verheijen Eindhoven University of Technology
Phl Peter Notten
Phl Peter Notten Eindhoven University of Technology
Ageeth A. Bol
Ageeth A. Bol University of Michigan–Ann Arbor
Bernd Rech
Bernd Rech Helmholtz-Zentrum Berlin für Materialien und Energie
Jan Schmidt
Jan Schmidt University of Hannover
Friedhelm Finger
Friedhelm Finger Forschungszentrum Jülich
Eray S. Aydil
Eray S. Aydil New York University

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