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75
Citations
19268
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Overview

Wmm Erwin Kessels is affiliated with Eindhoven University of Technology in the Netherlands. Their academic profile reflects a focus on scientific research conducted within this institution.

There are no recent papers, frequent co-authors, publication venues, book publications, or detailed fields of study available in the source data for Wmm Erwin Kessels. Similarly, no information on main topics of work, awards, or subfields of study has been provided.

Given the available data, Wmm Erwin Kessels' profile is characterized mainly by their primary institutional affiliation.

Best Publications

  • Plasma-Assisted Atomic Layer Deposition: Basics, Opportunities, and Challenges

    HB Harald Profijt;SE Stephen Potts;van de Mcm Richard Sanden;Wmm Erwin Kessels

  • Ultralow surface recombination of c-Si substrates passivated by plasma-assisted atomic layer deposited Al2O3

    B Bram Hoex;Sbs Stephan Heil;E Erik Langereis;van de Mcm Richard Sanden

  • Status and prospects of Al2O3-based surface passivation schemes for silicon solar cells

    G Gijs Dingemans;Wmm Erwin Kessels

  • On the c-Si surface passivation mechanism by the negative-charge-dielectric Al2O3

    B Bram Hoex;Jjh Joost Gielis;van de Mcm Richard Sanden;Wmm Erwin Kessels

  • Silicon surface passivation by atomic layer deposited Al2O3

    B Bram Hoex;J Jeroen Schmidt;P Pohl;van de Mcm Richard Sanden

  • Surface passivation of high‐efficiency silicon solar cells by atomic‐layer‐deposited Al2O3

    J Jeroen Schmidt;A Merkle;R Brendel;B Bram Hoex

  • Excellent passivation of highly doped p-type Si surfaces by the negative-charge-dielectric Al2O3

    B Bram Hoex;J Jeroen Schmidt;R Bock;PP Altermatt

  • Determining the material structure of microcrystalline silicon from Raman spectra

    C Chiel Smit;van Racmm René Swaaij;H Donker;Amhn Petit

  • The use of atomic layer deposition in advanced nanopatterning

    Ajm Adrie Mackus;AA Ageeth Bol;Wmm Erwin Kessels

  • In situ spectroscopic ellipsometry as a versatile tool for studying atomic layer deposition

    E Erik Langereis;Sbs Stephan Heil;Hcm Harm Knoops;W Wytze Keuning

  • Plasma and thermal ALD of Al2O3 in a commercial 200 mm ALD reactor

    van Jl Hans Hemmen;Sbs Stephan Heil;JH Klootwijk;F Fred Roozeboom

  • Vacancies and voids in hydrogenated amorphous silicon

    Ahm Arno Smets;Wmm Erwin Kessels;van de Mcm Richard Sanden

  • Low temperature plasma-enhanced atomic layer deposition of metal oxide thin films

    SE Stephen Potts;W Wytze Keuning;E Erik Langereis;G Gijs Dingemans

  • Influence of the Deposition Temperature on the c-Si Surface Passivation by Al2O3 Films Synthesized by ALD and PECVD

    G Gijs Dingemans;van de Mcm Richard Sanden;Wmm Erwin Kessels

  • Silicon surface passivation by ultrathin Al2O3 films synthesized by thermal and plasma atomic layer deposition

    G Gijs Dingemans;R Seguin;P Engelhart;van de Mcm Richard Sanden

  • Hydrogen induced passivation of Si interfaces by Al2O3 films and SiO2/Al2O3 stacks

    G Gijs Dingemans;W Beyer;van de Mcm Richard Sanden;Wmm Erwin Kessels

  • Optical emission spectroscopy as a tool for studying, optimizing, and monitoring plasma-assisted atomic layer deposition processes

    Ajm Adrie Mackus;Sbs Stephan Heil;E Erik Langereis;Hcm Harm Knoops

  • Conformality of Plasma-Assisted ALD: Physical Processes and Modeling

    Hcm Harm Knoops;E Erik Langereis;van de Mcm Richard Sanden;Wmm Erwin Kessels

  • Influence of the Oxidant on the Chemical and Field-Effect Passivation of Si by ALD Al2O3

    G Gijs Dingemans;NM Nick Terlinden;D Pierreux;HB Harald Profijt

  • Negative charge and charging dynamics in Al2O3 films on Si characterized by second-harmonic generation

    Jjh Joost Gielis;B Bram Hoex;van de Mcm Richard Sanden;Wmm Erwin Kessels

Frequent Co-Authors

van de Mcm Richard Sanden
van de Mcm Richard Sanden Eindhoven University of Technology
Fred Roozeboom
Fred Roozeboom University of Twente
Bram Hoex
Bram Hoex University of New South Wales
Marcel A. Verheijen
Marcel A. Verheijen Eindhoven University of Technology
Phl Peter Notten
Phl Peter Notten Eindhoven University of Technology
Ageeth A. Bol
Ageeth A. Bol University of Michigan–Ann Arbor
Bernd Rech
Bernd Rech Helmholtz-Zentrum Berlin für Materialien und Energie
Jan Schmidt
Jan Schmidt University of Hannover
Friedhelm Finger
Friedhelm Finger Forschungszentrum Jülich
Eray S. Aydil
Eray S. Aydil New York University

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