World's Best Scientists 2026 revealed!

D-Index & Metrics

Materials Science

D-Index
45
Citations
10270
World Ranking
11622
National Ranking
335

Bram Hoex publication distribution in Materials Science in 2026

The chart shows the distribution of publications by all Research.com ranked scientists in the field of Materials Science in 2026. The highlighted bar marks where Bram Hoex sits on this spectrum.

50–69 publications: 28 scientists 70–89 publications: 152 scientists 90–109 publications: 356 scientists 110–129 publications: 487 scientists 130–149 publications: 723 scientists 150–169 publications: 835 scientists 170–189 publications: 850 scientists 190–209 publications: 891 scientists 210–229 publications: 862 scientists 230–249 publications: 766 scientists 250–269 publications: 726 scientists 270–289 publications: 665 scientists 290–309 publications: 593 scientists 310–329 publications: 537 scientists 330–349 publications: 477 scientists 350–369 publications: 440 scientists 370–389 publications: 356 scientists 390–409 publications: 321 scientists 410–429 publications: 256 scientists 430–449 publications: 246 scientists 450–469 publications: 216 scientists 470–489 publications: 212 scientists 490–509 publications: 174 scientists 510–529 publications: 194 scientists 530–549 publications: 162 scientists 550–569 publications: 131 scientists 570–589 publications: 111 scientists 590–609 publications: 103 scientists 610–629 publications: 99 scientists 630–649 publications: 77 scientists 650–669 publications: 92 scientists 670–689 publications: 56 scientists 690–709 publications: 53 scientists 710–729 publications: 53 scientists 730–749 publications: 38 scientists 750–769 publications: 52 scientists 770–789 publications: 43 scientists 790–809 publications: 38 scientists 810–829 publications: 34 scientists 830–849 publications: 25 scientists 850–869 publications: 18 scientists 870–889 publications: 20 scientists 890–909 publications: 24 scientists 910–929 publications: 27 scientists 930–949 publications: 20 scientists 950–969 publications: 17 scientists 970–989 publications: 10 scientists 990–1,009 publications: 16 scientists 1,010–1,029 publications: 13 scientists 1,030–1,049 publications: 12 scientists 1,050–1,069 publications: 9 scientists 1,070–1,089 publications: 8 scientists 1,090–1,109 publications: 7 scientists 1,110–1,129 publications: 9 scientists 1,130–1,149 publications: 2 scientists 1,150–1,162 publications: 5 scientists 1,163+ publications: 100 scientists
50 publications 1,163+

This scientist: 265 publications — 51st percentile

51% of scientists in this discipline score the same or lower.

The last bar groups every scientist with 1,163 publications or more.

Bram Hoex D-index placement in Materials Science in 2026

The chart shows the D-index (discipline H-index) distribution of Materials Science scientists ranked by Research.com in 2026. The highlighted bar marks where Bram Hoex sits on this spectrum.

40–41 D-Index: 211 scientists 42–43 D-Index: 450 scientists 44–45 D-Index: 612 scientists 46–47 D-Index: 612 scientists 48–49 D-Index: 598 scientists 50–51 D-Index: 657 scientists 52–53 D-Index: 667 scientists 54–55 D-Index: 621 scientists 56–57 D-Index: 597 scientists 58–59 D-Index: 610 scientists 60–61 D-Index: 587 scientists 62–63 D-Index: 606 scientists 64–65 D-Index: 533 scientists 66–67 D-Index: 490 scientists 68–69 D-Index: 469 scientists 70–71 D-Index: 378 scientists 72–73 D-Index: 421 scientists 74–75 D-Index: 359 scientists 76–77 D-Index: 323 scientists 78–79 D-Index: 299 scientists 80–81 D-Index: 230 scientists 82–83 D-Index: 210 scientists 84–85 D-Index: 195 scientists 86–87 D-Index: 203 scientists 88–89 D-Index: 175 scientists 90–91 D-Index: 175 scientists 92–93 D-Index: 142 scientists 94–95 D-Index: 121 scientists 96–97 D-Index: 117 scientists 98–99 D-Index: 107 scientists 100–101 D-Index: 88 scientists 102–103 D-Index: 85 scientists 104–105 D-Index: 68 scientists 106–107 D-Index: 62 scientists 108–109 D-Index: 57 scientists 110–111 D-Index: 45 scientists 112–113 D-Index: 49 scientists 114–115 D-Index: 50 scientists 116–117 D-Index: 34 scientists 118–119 D-Index: 38 scientists 120–121 D-Index: 37 scientists 122–123 D-Index: 29 scientists 124–125 D-Index: 28 scientists 126–127 D-Index: 24 scientists 128–129 D-Index: 33 scientists 130–131 D-Index: 28 scientists 132–133 D-Index: 21 scientists 134–135 D-Index: 20 scientists 136–137 D-Index: 23 scientists 138–139 D-Index: 17 scientists 140–141 D-Index: 12 scientists 142–143 D-Index: 17 scientists 144–145 D-Index: 21 scientists 146–147 D-Index: 13 scientists 148–149 D-Index: 11 scientists 150–151 D-Index: 14 scientists 152–153 D-Index: 13 scientists 154–155 D-Index: 9 scientists 156–157 D-Index: 10 scientists 158–159 D-Index: 7 scientists 160–161 D-Index: 4 scientists 162–163 D-Index: 4 scientists 164 D-Index: 3 scientists 165+ D-Index: 98 scientists
40 D-Index 165+

This scientist: 45 D-Index — 10th percentile

10% of scientists in this discipline score the same or lower.

The last bar groups every scientist with 165 D-Index or more.

Overview

Bram Hoex is affiliated with the University of New South Wales in Australia and has a research profile centered primarily in the field of engineering, with significant contributions in electrical and electronic engineering. Their research encompasses key subfields such as materials chemistry, renewable energy, sustainability and the environment, atomic and molecular physics and optics, as well as biomedical engineering.

The scientist's work focuses extensively on silicon and solar cell technologies, semiconductor materials and devices, semiconductor materials and interfaces, and thin-film transistor technologies. Further topics include photovoltaic system optimization techniques, solar cell performance optimization, and chalcogenide semiconductor thin films.

Frequent coauthors in their work include Muhammad Umair Khan, Xinyuan Wu, Chandany Sen, Shaozhou Wang, and Malcolm Abbott. These collaborations reflect a broad network within the photovoltaic and semiconductor research communities.

Key publication venues where their research is regularly featured are:

  • Solar Energy Materials and Solar Cells
  • Progress in Photovoltaics Research and Applications
  • arXiv (Cornell University)
  • IEEE Journal of Photovoltaics
  • SSRN Electronic Journal

Notable recent papers by Bram Hoex include:

  • "Recent Advances in Materials Design Using Atomic Layer Deposition for Energy Applications," 2021, Advanced Functional Materials
  • "Progress in Semitransparent Organic Solar Cells," 2021, Solar RRL
  • "Bilayer MoOX/CrOX Passivating Contact Targeting Highly Stable Silicon Heterojunction Solar Cells," 2020, ACS Applied Materials & Interfaces
  • "Converting Sewage Water into H2 Fuel Gas Using Cu/CuO Nanoporous Photocatalytic Electrodes," 2022, Materials
  • "9.6%-Efficient all-inorganic Sb2(S,Se)3 solar cells with a MnS hole-transporting layer," 2022, Journal of Materials Chemistry A

Best Publications

  • Ultralow surface recombination of c-Si substrates passivated by plasma-assisted atomic layer deposited Al2O3

    B Bram Hoex;Sbs Stephan Heil;E Erik Langereis;van de Mcm Richard Sanden

  • On the c-Si surface passivation mechanism by the negative-charge-dielectric Al2O3

    B Bram Hoex;Jjh Joost Gielis;van de Mcm Richard Sanden;Wmm Erwin Kessels

  • Silicon surface passivation by atomic layer deposited Al2O3

    B Bram Hoex;J Jeroen Schmidt;P Pohl;van de Mcm Richard Sanden

  • Surface passivation of high‐efficiency silicon solar cells by atomic‐layer‐deposited Al2O3

    J Jeroen Schmidt;A Merkle;R Brendel;B Bram Hoex

  • Black silicon: fabrication methods, properties and solar energy applications

    Xiaogang Liu;Xiaogang Liu;Paul R. Coxon;Marius Peters;Bram Hoex

  • Excellent passivation of highly doped p-type Si surfaces by the negative-charge-dielectric Al2O3

    B Bram Hoex;J Jeroen Schmidt;R Bock;PP Altermatt

  • High efficiency n-type Si solar cells on Al2O3-passivated boron emitters

    Jan Benick;Bram Hoex;M. C. M. van de Sanden;W. M. M. Kessels

  • Dielectric surface passivation for silicon solar cells: A review

    Ruy S. Bonilla;Bram Hoex;Phillip Hamer;Peter R. Wilshaw

  • Negative charge and charging dynamics in Al2O3 films on Si characterized by second-harmonic generation

    Jjh Joost Gielis;B Bram Hoex;van de Mcm Richard Sanden;Wmm Erwin Kessels

  • Stability of Al2O3 and Al2O3/a-SiNx:H stacks for surface passivation of crystalline silicon

    G Gijs Dingemans;P Engelhart;R Seguin;F Einsele

  • Optimised Antireflection Coatings using Silicon Nitride on Textured Silicon Surfaces based on Measurements and Multidimensional Modelling

    Shubham Duttagupta;Fajun Ma;Bram Hoex;Thomas Mueller

  • A Fill Factor Loss Analysis Method for Silicon Wafer Solar Cells

    Ankit Khanna;Thomas Mueller;Rolf A. Stangl;Bram Hoex

  • Excellent c-Si surface passivation by low-temperature atomic layer deposited titanium oxide

    Baochen Liao;Bram Hoex;Armin G. Aberle;Dongzhi Chi

  • Cd-Free Cu2ZnSnS4 solar cell with an efficiency greater than 10% enabled by Al2O3 passivation layers

    Xin Cui;Kaiwen Sun;Jialiang Huang;Jae S. Yun

  • Recent Advances in Materials Design Using Atomic Layer Deposition for Energy Applications

    Unknown

  • Surface passivation of phosphorus-diffused n+-type emitters by plasma-assisted atomic-layer deposited Al2O3

    B Bram Hoex;van de Mcm Richard Sanden;J Jeroen Schmidt;R Brendel

  • Broken metal fingers in silicon wafer solar cells and PV modules

    Pooja Chaturvedi;Bram Hoex;Timothy M. Walsh

  • The role of hydrogenation and gettering in enhancing the efficiency of next-generation Si solar cells: An industrial perspective

    Brett Hallam;Daniel Chen;Moonyong Kim;Bruno Stefani

  • Acceleration and mitigation of carrier-induced degradation in p-type multi-crystalline silicon

    D. N. R. Payne;C. E. Chan;B. J. Hallam;B. Hoex

  • Sign reversal of spin polarization in Co/Ru/Al2O3/Co magnetic tunnel junctions

    PR Patrick LeClair;B Bram Hoex;H Harm Wieldraaijer;JT Jürgen Kohlhepp

  • Atomic layer deposition enabling higher efficiency solar cells: A review

    Md. Anower Hossain;Kean Thong Khoo;Xin Cui;Geedhika K Poduval

  • Enhanced Heterojunction Interface Quality To Achieve 9.3% Efficient Cd-Free Cu2ZnSnS4 Solar Cells Using Atomic Layer Deposition ZnSnO Buffer Layer

    Xin Cui;Kaiwen Sun;Jialiang Huang;Chang-Yeh Lee

  • HIGH-EFFICIENCY N-TYPE SILICON SOLAR CELLS WITH FRONT SIDE BORON EMITTER

    J Benick;B Bram Hoex;G Gijs Dingemans;Wmm Erwin Kessels

Frequent Co-Authors

Armin G. Aberle
Armin G. Aberle National University of Singapore
Wmm Erwin Kessels
Wmm Erwin Kessels Eindhoven University of Technology
van de Mcm Richard Sanden
van de Mcm Richard Sanden Eindhoven University of Technology
Wilhelmus M. M. Kessels
Wilhelmus M. M. Kessels Eindhoven University of Technology
Jan Schmidt
Jan Schmidt University of Hannover
Stuart Wenham
Stuart Wenham University of New South Wales
Rolf Brendel
Rolf Brendel University of Hannover
Ganesh S. Samudra
Ganesh S. Samudra National University of Singapore
Brett Hallam
Brett Hallam University of New South Wales
Prabir Basu
Prabir Basu Dalhousie University

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