World's Best Scientists 2026 revealed!

D-Index & Metrics

Materials Science

D-Index
63
Citations
17077
World Ranking
6080
National Ranking
117

Armin G. Aberle publication distribution in Materials Science in 2026

The chart shows the distribution of publications by all Research.com ranked scientists in the field of Materials Science in 2026. The highlighted bar marks where Armin G. Aberle sits on this spectrum.

50–69 publications: 28 scientists 70–89 publications: 152 scientists 90–109 publications: 356 scientists 110–129 publications: 487 scientists 130–149 publications: 723 scientists 150–169 publications: 835 scientists 170–189 publications: 850 scientists 190–209 publications: 891 scientists 210–229 publications: 862 scientists 230–249 publications: 766 scientists 250–269 publications: 726 scientists 270–289 publications: 665 scientists 290–309 publications: 593 scientists 310–329 publications: 537 scientists 330–349 publications: 477 scientists 350–369 publications: 440 scientists 370–389 publications: 356 scientists 390–409 publications: 321 scientists 410–429 publications: 256 scientists 430–449 publications: 246 scientists 450–469 publications: 216 scientists 470–489 publications: 212 scientists 490–509 publications: 174 scientists 510–529 publications: 194 scientists 530–549 publications: 162 scientists 550–569 publications: 131 scientists 570–589 publications: 111 scientists 590–609 publications: 103 scientists 610–629 publications: 99 scientists 630–649 publications: 77 scientists 650–669 publications: 92 scientists 670–689 publications: 56 scientists 690–709 publications: 53 scientists 710–729 publications: 53 scientists 730–749 publications: 38 scientists 750–769 publications: 52 scientists 770–789 publications: 43 scientists 790–809 publications: 38 scientists 810–829 publications: 34 scientists 830–849 publications: 25 scientists 850–869 publications: 18 scientists 870–889 publications: 20 scientists 890–909 publications: 24 scientists 910–929 publications: 27 scientists 930–949 publications: 20 scientists 950–969 publications: 17 scientists 970–989 publications: 10 scientists 990–1,009 publications: 16 scientists 1,010–1,029 publications: 13 scientists 1,030–1,049 publications: 12 scientists 1,050–1,069 publications: 9 scientists 1,070–1,089 publications: 8 scientists 1,090–1,109 publications: 7 scientists 1,110–1,129 publications: 9 scientists 1,130–1,149 publications: 2 scientists 1,150–1,162 publications: 5 scientists 1,163+ publications: 100 scientists
50 publications 1,163+

This scientist: 473 publications — 84th percentile

84% of scientists in this discipline score the same or lower.

The last bar groups every scientist with 1,163 publications or more.

Armin G. Aberle D-index placement in Materials Science in 2026

The chart shows the D-index (discipline H-index) distribution of Materials Science scientists ranked by Research.com in 2026. The highlighted bar marks where Armin G. Aberle sits on this spectrum.

40–41 D-Index: 211 scientists 42–43 D-Index: 450 scientists 44–45 D-Index: 612 scientists 46–47 D-Index: 612 scientists 48–49 D-Index: 598 scientists 50–51 D-Index: 657 scientists 52–53 D-Index: 667 scientists 54–55 D-Index: 621 scientists 56–57 D-Index: 597 scientists 58–59 D-Index: 610 scientists 60–61 D-Index: 587 scientists 62–63 D-Index: 606 scientists 64–65 D-Index: 533 scientists 66–67 D-Index: 490 scientists 68–69 D-Index: 469 scientists 70–71 D-Index: 378 scientists 72–73 D-Index: 421 scientists 74–75 D-Index: 359 scientists 76–77 D-Index: 323 scientists 78–79 D-Index: 299 scientists 80–81 D-Index: 230 scientists 82–83 D-Index: 210 scientists 84–85 D-Index: 195 scientists 86–87 D-Index: 203 scientists 88–89 D-Index: 175 scientists 90–91 D-Index: 175 scientists 92–93 D-Index: 142 scientists 94–95 D-Index: 121 scientists 96–97 D-Index: 117 scientists 98–99 D-Index: 107 scientists 100–101 D-Index: 88 scientists 102–103 D-Index: 85 scientists 104–105 D-Index: 68 scientists 106–107 D-Index: 62 scientists 108–109 D-Index: 57 scientists 110–111 D-Index: 45 scientists 112–113 D-Index: 49 scientists 114–115 D-Index: 50 scientists 116–117 D-Index: 34 scientists 118–119 D-Index: 38 scientists 120–121 D-Index: 37 scientists 122–123 D-Index: 29 scientists 124–125 D-Index: 28 scientists 126–127 D-Index: 24 scientists 128–129 D-Index: 33 scientists 130–131 D-Index: 28 scientists 132–133 D-Index: 21 scientists 134–135 D-Index: 20 scientists 136–137 D-Index: 23 scientists 138–139 D-Index: 17 scientists 140–141 D-Index: 12 scientists 142–143 D-Index: 17 scientists 144–145 D-Index: 21 scientists 146–147 D-Index: 13 scientists 148–149 D-Index: 11 scientists 150–151 D-Index: 14 scientists 152–153 D-Index: 13 scientists 154–155 D-Index: 9 scientists 156–157 D-Index: 10 scientists 158–159 D-Index: 7 scientists 160–161 D-Index: 4 scientists 162–163 D-Index: 4 scientists 164 D-Index: 3 scientists 165+ D-Index: 98 scientists
40 D-Index 165+

This scientist: 63 D-Index — 53rd percentile

53% of scientists in this discipline score the same or lower.

The last bar groups every scientist with 165 D-Index or more.

Overview

Armin G. Aberle is affiliated with the National University of Singapore. Their research primarily spans the fields of Engineering and Materials Science, with a significant focus on Electrical and Electronic Engineering as well as Materials Chemistry.

Their work covers various subfields including Atomic and Molecular Physics and Optics, Polymers and Plastics, and Biomedical Engineering. The main topics of investigation are centered on Perovskite Materials and Applications, Silicon and Solar Cell Technologies, and Chalcogenide Semiconductor Thin Films. Additional interests include Thin-Film Transistor Technologies, Semiconductor Materials and Interfaces, Conducting Polymers and Applications, and Quantum Dots Synthesis and Properties.

Among their recent publications are:

  • "Recent progress in flexible-wearable solar cells for self-powered electronic devices" (2020, Energy & Environmental Science)
  • "An invertible crystallographic representation for general inverse design of inorganic crystals with targeted properties" (2021, Matter)
  • "Analytical Review of Spiro-OMeTAD Hole Transport Materials: Paths Toward Stable and Efficient Perovskite Solar Cells" (2022, Advanced Energy and Sustainability Research)
  • "Revealing the Degradation and Self-Healing Mechanisms in Perovskite Solar Cells by Sub-Bandgap External Quantum Efficiency Spectroscopy" (2020, Advanced Materials)
  • "Roadmap on commercialization of metal halide perovskite photovoltaics" (2023, Journal of Physics Materials)

Frequent coauthors in their research include Fen Lin, Pradeep Padhamnath, Shubham Duttagupta, Zekun Ren, and Siyu Tian.

Aberle has published regularly in leading venues such as Solar Energy, Solar Energy Materials and Solar Cells, and the SiliconPV Conference Proceedings. Their contributions also extend to Energy & Environmental Science and Matter.

Best Publications

  • Surface passivation of crystalline silicon solar cells: a review

    Armin G Aberle

  • Impact of illumination level and oxide parameters on Shockley–Read–Hall recombination at the Si‐SiO2 interface

    Armin G. Aberle;Stefan Glunz;Wilhelm Warta

  • Overview on SiN surface passivation of crystalline silicon solar cells

    Armin G Aberle

  • Generalized analysis of quasi-steady-state and quasi-transient measurements of carrier lifetimes in semiconductors

    Henning Nagel;Christopher Berge;Armin G. Aberle

  • Recent progress in flexible–wearable solar cells for self-powered electronic devices

    Seyyed Alireza Hashemi;Seeram Ramakrishna;Armin Gerhard Aberle

  • Potential-induced degradation in photovoltaic modules: a critical review

    Wei Luo;Yong Sheng Khoo;Peter Hacke;Volker Naumann

  • Thin-film solar cells

    Armin G. Aberle

  • Record low surface recombination velocities on 1 Ω cm p‐silicon using remote plasma silicon nitride passivation

    Thomas Lauinger;Jan Schmidt;Armin G. Aberle;Rudolf Hezel

  • Crystalline silicon solar cells : advanced surface passivation and analysis

    Armin G. Aberle

  • Investigation of carrier lifetime instabilities in Cz-grown silicon

    J. Schmidt;A.G. Aberle;R. Hezel

  • Optimisation of ZnO:Al films by change of sputter gas pressure for solar cell application

    Dengyuan Song;Armin G. Aberle;James Xia

  • A new method for accurate measurements of the lumped series resistance of solar cells

    A.G. Aberle;S.R. Wenham;M.A. Green

  • Optimised antireflection coatings for planar silicon solar cells using remote PECVD silicon nitride and porous silicon dioxide

    Henning Nagel;Armin G. Aberle;Rudolf Hezel

  • Progress in Low‐temperature Surface Passivation of Silicon Solar Cells using Remote‐plasma Silicon Nitride

    Armin G. Aberle;Rudolf Hezel

  • ACCURATE METHOD FOR THE DETERMINATION OF BULK MINORITY-CARRIER LIFETIMES OF MONO- AND MULTICRYSTALLINE SILICON WAFERS

    Jan Schmidt;Armin G. Aberle

  • Carrier recombination at silicon–silicon nitride interfaces fabricated by plasma-enhanced chemical vapor deposition

    Jan Schmidt;Armin G. Aberle

  • Analytical Review of Spiro‐OMeTAD Hole Transport Materials: Paths Toward Stable and Efficient Perovskite Solar Cells

    Unknown

  • Assessment and parameterisation of Coulomb-enhanced Auger recombination coefficients in lowly injected crystalline silicon

    Pietro P. Altermatt;Jan Schmidt;Gernot Heiser;Armin G. Aberle

  • Investigation of lateral parameter variations of Al-doped zinc oxide films prepared on glass substrates by rf magnetron sputtering

    Dengyuan Song;Per Widenborg;Winston Chin;Armin G. Aberle

  • Optimised Antireflection Coatings using Silicon Nitride on Textured Silicon Surfaces based on Measurements and Multidimensional Modelling

    Shubham Duttagupta;Fajun Ma;Bram Hoex;Thomas Mueller

  • Direct Solar Energy

    Dan Arvizu;Palani Balaya;Luisa F. Cabeza;K.G. Terry Hollands

  • Optimization and characterization of remote plasma-enhanced chemical vapor deposition silicon nitride for the passivation of p-type crystalline silicon surfaces

    Thomas Lauinger;Jens Moschner;Armin G. Aberle;Rudolf Hezel

Frequent Co-Authors

Bram Hoex
Bram Hoex University of New South Wales
Martin A. Green
Martin A. Green University of New South Wales
Gernot Heiser
Gernot Heiser University of New South Wales
Stuart Wenham
Stuart Wenham University of New South Wales
Stefan W. Glunz
Stefan W. Glunz Fraunhofer Institute for Solar Energy Systems
Seeram Ramakrishna
Seeram Ramakrishna Tsinghua University
Thomas Reindl
Thomas Reindl National University of Singapore
Akash Kumar
Akash Kumar TU Dresden

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