World's Best Scientists 2026 revealed!
Pietro P. Altermatt

Pietro P. Altermatt

D-Index & Metrics

Electronics and Electrical Engineering

D-Index
45
Citations
8109
World Ranking
3555
National Ranking
565

Pietro P. Altermatt publication distribution in Electronics and Electrical Engineering in 2026

The chart shows the distribution of publications by all Research.com ranked scientists in the field of Electronics and Electrical Engineering in 2026. The highlighted bar marks where Pietro P. Altermatt sits on this spectrum.

34–53 publications: 24 scientists 54–73 publications: 52 scientists 74–93 publications: 114 scientists 94–113 publications: 203 scientists 114–133 publications: 269 scientists 134–153 publications: 355 scientists 154–173 publications: 403 scientists 174–193 publications: 445 scientists 194–213 publications: 430 scientists 214–233 publications: 431 scientists 234–253 publications: 399 scientists 254–273 publications: 366 scientists 274–293 publications: 335 scientists 294–313 publications: 300 scientists 314–333 publications: 276 scientists 334–353 publications: 250 scientists 354–373 publications: 214 scientists 374–393 publications: 187 scientists 394–413 publications: 152 scientists 414–433 publications: 169 scientists 434–453 publications: 147 scientists 454–473 publications: 111 scientists 474–493 publications: 117 scientists 494–513 publications: 103 scientists 514–533 publications: 99 scientists 534–553 publications: 92 scientists 554–573 publications: 75 scientists 574–593 publications: 58 scientists 594–613 publications: 69 scientists 614–633 publications: 50 scientists 634–653 publications: 62 scientists 654–673 publications: 54 scientists 674–693 publications: 44 scientists 694–713 publications: 37 scientists 714–733 publications: 28 scientists 734–753 publications: 26 scientists 754–773 publications: 26 scientists 774–793 publications: 19 scientists 794–813 publications: 23 scientists 814–833 publications: 20 scientists 834–853 publications: 16 scientists 854–873 publications: 20 scientists 874–893 publications: 11 scientists 894–913 publications: 11 scientists 914–933 publications: 16 scientists 934–953 publications: 13 scientists 954–973 publications: 10 scientists 974–993 publications: 11 scientists 994–1,013 publications: 9 scientists 1,014–1,033 publications: 9 scientists 1,034–1,053 publications: 10 scientists 1,054–1,064 publications: 6 scientists 1,065+ publications: 99 scientists
34 publications 1,065+

This scientist: 195 publications — 28th percentile

28% of scientists in this discipline score the same or lower.

The last bar groups every scientist with 1,065 publications or more.

Pietro P. Altermatt D-index placement in Electronics and Electrical Engineering in 2026

The chart shows the D-index (discipline H-index) distribution of Electronics and Electrical Engineering scientists ranked by Research.com in 2026. The highlighted bar marks where Pietro P. Altermatt sits on this spectrum.

30 D-Index: 178 scientists 31 D-Index: 257 scientists 32 D-Index: 263 scientists 33 D-Index: 262 scientists 34 D-Index: 244 scientists 35 D-Index: 236 scientists 36 D-Index: 211 scientists 37 D-Index: 220 scientists 38 D-Index: 214 scientists 39 D-Index: 214 scientists 40 D-Index: 205 scientists 41 D-Index: 187 scientists 42 D-Index: 194 scientists 43 D-Index: 201 scientists 44 D-Index: 155 scientists 45 D-Index: 189 scientists 46 D-Index: 148 scientists 47 D-Index: 160 scientists 48 D-Index: 134 scientists 49 D-Index: 130 scientists 50 D-Index: 141 scientists 51 D-Index: 156 scientists 52 D-Index: 108 scientists 53 D-Index: 130 scientists 54 D-Index: 112 scientists 55 D-Index: 97 scientists 56 D-Index: 111 scientists 57 D-Index: 102 scientists 58 D-Index: 108 scientists 59 D-Index: 120 scientists 60 D-Index: 103 scientists 61 D-Index: 93 scientists 62 D-Index: 92 scientists 63 D-Index: 74 scientists 64 D-Index: 77 scientists 65 D-Index: 73 scientists 66 D-Index: 64 scientists 67 D-Index: 69 scientists 68 D-Index: 60 scientists 69 D-Index: 39 scientists 70 D-Index: 57 scientists 71 D-Index: 59 scientists 72 D-Index: 46 scientists 73 D-Index: 49 scientists 74 D-Index: 38 scientists 75 D-Index: 35 scientists 76 D-Index: 32 scientists 77 D-Index: 35 scientists 78 D-Index: 31 scientists 79 D-Index: 22 scientists 80 D-Index: 34 scientists 81 D-Index: 31 scientists 82 D-Index: 34 scientists 83 D-Index: 23 scientists 84 D-Index: 18 scientists 85 D-Index: 30 scientists 86 D-Index: 19 scientists 87 D-Index: 19 scientists 88 D-Index: 20 scientists 89 D-Index: 8 scientists 90 D-Index: 17 scientists 91 D-Index: 7 scientists 92 D-Index: 14 scientists 93 D-Index: 9 scientists 94 D-Index: 15 scientists 95 D-Index: 10 scientists 96 D-Index: 12 scientists 97 D-Index: 10 scientists 98 D-Index: 10 scientists 99 D-Index: 12 scientists 100 D-Index: 16 scientists 101 D-Index: 5 scientists 102 D-Index: 7 scientists 103 D-Index: 7 scientists 104 D-Index: 8 scientists 105 D-Index: 9 scientists 106 D-Index: 13 scientists 107 D-Index: 4 scientists 108 D-Index: 5 scientists 109 D-Index: 10 scientists 110 D-Index: 8 scientists 111+ D-Index: 96 scientists
30 D-Index 111+

This scientist: 45 D-Index — 50th percentile

50% of scientists in this discipline score the same or lower.

The last bar groups every scientist with 111 D-Index or more.

Overview

Pietro P. Altermatt is affiliated with Trina Solar in China and has contributed extensively to the field of engineering, with a particular focus on electrical and electronic engineering. Their research also encompasses environmental engineering, atomic and molecular physics, optics, renewable energy, sustainability, and materials chemistry.

The scientist's main topics of expertise include silicon and solar cell technologies, semiconductor materials and interfaces, integrated circuits and semiconductor failure analysis, semiconductor materials and devices, photovoltaic systems and sustainability, thin-film transistor technologies, and photovoltaic system optimization techniques.

Recent publications by Pietro P. Altermatt include the following:

  • Photovoltaics at multi-terawatt scale: Waiting is not an option, 2023, Science
  • The silver learning curve for photovoltaics and projected silver demand for net-zero emissions by 2050, 2022, Progress in Photovoltaics Research and Applications
  • Gallium-Doped Silicon for High-Efficiency Commercial Passivated Emitter and Rear Solar Cells, 2021, Solar RRL
  • Technology evolution of the photovoltaic industry: Learning from history and recent progress, 2022, Progress in Photovoltaics Research and Applications
  • Design considerations for the bottom cell in perovskite/silicon tandems: a terawatt scalability perspective, 2023, Energy & Environmental Science

Frequent co-authors include Ruy S. Bonilla (15 publications), Mingzhe Yu (8 publications), Isabel Al-Dhahir (7 publications), Phillip Hamer (7 publications), and Shona McNab (7 publications).

Altermatt's work has been published regularly in several venues, notably:

  • Solar Energy Materials and Solar Cells
  • Zenodo (CERN European Organization for Nuclear Research)
  • Progress in Photovoltaics Research and Applications
  • AIP conference proceedings
  • IEEE Journal of Photovoltaics

Best Publications

  • Excellent passivation of highly doped p-type Si surfaces by the negative-charge-dielectric Al2O3

    B Bram Hoex;J Jeroen Schmidt;R Bock;PP Altermatt

  • Twenty‐four percent efficient silicon solar cells with double layer antireflection coatings and reduced resistance loss

    J. Zhao;A. Wang;P. Altermatt;M. A. Green

  • Models for numerical device simulations of crystalline silicon solar cells--a review

    Pietro P. Altermatt

  • 24% efficient perl silicon solar cell: Recent improvements in high efficiency silicon cell research

    Jianhua Zhao;Aihua Wang;Pietro P. Altermatt;Stuart R. Wenham

  • Reassessment of the intrinsic carrier density in crystalline silicon in view of band-gap narrowing

    Pietro P. Altermatt;Andreas Schenk;Frank Geelhaar;Gernot Heiser

  • A simulation model for the density of states and for incomplete ionization in crystalline silicon. I. Establishing the model in Si:P

    P. P. Altermatt;A. Schenk;G. Heiser

  • 24.58% total area efficiency of screen-printed, large area industrial silicon solar cells with the tunnel oxide passivated contacts (i-TOPCon) design

    Daming Chen;Yifeng Chen;Zigang Wang;Jian Gong

  • Numerical modeling of highly doped Si:P emitters based on Fermi–Dirac statistics and self-consistent material parameters

    Pietro P. Altermatt;Jürgen O. Schumacher;Andres Cuevas;Mark J. Kerr

  • Input Parameters for the Simulation of Silicon Solar Cells in 2014

    Andreas Fell;Keith R. McIntosh;Pietro P. Altermatt;Gaby J. M. Janssen

  • Specifying targets of future research in photovoltaic devices containing pyrite (FeS2) by numerical modelling

    Pietro P. Altermatt;Tobias Kiesewetter;Klaus Ellmer;Helmut Tributsch

  • Assessment and parameterisation of Coulomb-enhanced Auger recombination coefficients in lowly injected crystalline silicon

    Pietro P. Altermatt;Jan Schmidt;Gernot Heiser;Armin G. Aberle

  • A simulation model for the density of states and for incomplete ionization in crystalline silicon. II. Investigation of Si:As and Si:B and usage in device simulation

    P. P. Altermatt;A. Schenk;B. Schmithüsen;G. Heiser

  • Mass production of industrial tunnel oxide passivated contacts (i‐TOPCon) silicon solar cells with average efficiency over 23% and modules over 345 W

    Yifeng Chen;Daming Chen;Chengfa Liu;Zigang Wang

  • Impurity-Related Limitations of Next-Generation Industrial Silicon Solar Cells

    Jan Schmidt;Bianca Lim;Dominic Walter;Karsten Bothe

  • Explanation of commonly observed shunt currents in c-Si solar cells by means of recombination statistics beyond the Shockley-Read-Hall approximation

    Silke Steingrube;Otwin Breitenstein;Klaus Ramspeck;Stefan Glunz

  • Advances in the Surface Passivation of Silicon Solar Cells

    Jan Schmidt;Florian Werner;Boris Veith;Dimitri Zielke

  • A freeware 1D emitter model for silicon solar cells

    Keith R. McIntosh;Pietro P. Altermatt

  • Spatially resolved analysis and minimization of resistive losses in high-efficiency Si solar cells

    Pietro P. Altermatt;Gernot Heiser;Armin G. Aberle;Aihua Wang

  • Limiting loss mechanisms in 23% efficient silicon solar cells

    Armin G. Aberle;Pietro P. Altermatt;Gernot Heiser;Stephen J. Robinson

  • Interpretation of recombination at c-Si/SiNx interfaces by surface damage

    Silke Steingrube;Pietro P. Altermatt;Daniel S. Steingrube;Jan Schmidt

  • The surface recombination velocity at boron-doped emitters: Comparison between various passivation techniques

    Pietro P Altermatt;H Plagwitz;R Bock;Jan Schmidt

  • 24% efficient silicon solar cells

    Jianhua Zhao;Aihua Wang;P.P. Altermatt;S.R. Wenham

Frequent Co-Authors

Rolf Brendel
Rolf Brendel University of Hannover
Gernot Heiser
Gernot Heiser University of New South Wales
Martin A. Green
Martin A. Green University of New South Wales
Jan Schmidt
Jan Schmidt University of Hannover
Armin G. Aberle
Armin G. Aberle National University of Singapore
Thorsten Trupke
Thorsten Trupke University of New South Wales
Stuart Wenham
Stuart Wenham University of New South Wales
Otwin Breitenstein
Otwin Breitenstein Max Planck Society
Keith R. McIntosh
Keith R. McIntosh University of Wollongong

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