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D-Index & Metrics

Materials Science

D-Index
74
Citations
18998
World Ranking
3658
National Ranking
203

Jan Schmidt publication distribution in Materials Science in 2026

The chart shows the distribution of publications by all Research.com ranked scientists in the field of Materials Science in 2026. The highlighted bar marks where Jan Schmidt sits on this spectrum.

50–69 publications: 28 scientists 70–89 publications: 152 scientists 90–109 publications: 356 scientists 110–129 publications: 487 scientists 130–149 publications: 723 scientists 150–169 publications: 835 scientists 170–189 publications: 850 scientists 190–209 publications: 891 scientists 210–229 publications: 862 scientists 230–249 publications: 766 scientists 250–269 publications: 726 scientists 270–289 publications: 665 scientists 290–309 publications: 593 scientists 310–329 publications: 537 scientists 330–349 publications: 477 scientists 350–369 publications: 440 scientists 370–389 publications: 356 scientists 390–409 publications: 321 scientists 410–429 publications: 256 scientists 430–449 publications: 246 scientists 450–469 publications: 216 scientists 470–489 publications: 212 scientists 490–509 publications: 174 scientists 510–529 publications: 194 scientists 530–549 publications: 162 scientists 550–569 publications: 131 scientists 570–589 publications: 111 scientists 590–609 publications: 103 scientists 610–629 publications: 99 scientists 630–649 publications: 77 scientists 650–669 publications: 92 scientists 670–689 publications: 56 scientists 690–709 publications: 53 scientists 710–729 publications: 53 scientists 730–749 publications: 38 scientists 750–769 publications: 52 scientists 770–789 publications: 43 scientists 790–809 publications: 38 scientists 810–829 publications: 34 scientists 830–849 publications: 25 scientists 850–869 publications: 18 scientists 870–889 publications: 20 scientists 890–909 publications: 24 scientists 910–929 publications: 27 scientists 930–949 publications: 20 scientists 950–969 publications: 17 scientists 970–989 publications: 10 scientists 990–1,009 publications: 16 scientists 1,010–1,029 publications: 13 scientists 1,030–1,049 publications: 12 scientists 1,050–1,069 publications: 9 scientists 1,070–1,089 publications: 8 scientists 1,090–1,109 publications: 7 scientists 1,110–1,129 publications: 9 scientists 1,130–1,149 publications: 2 scientists 1,150–1,162 publications: 5 scientists 1,163+ publications: 100 scientists
50 publications 1,163+

This scientist: 334 publications — 67th percentile

67% of scientists in this discipline score the same or lower.

The last bar groups every scientist with 1,163 publications or more.

Jan Schmidt D-index placement in Materials Science in 2026

The chart shows the D-index (discipline H-index) distribution of Materials Science scientists ranked by Research.com in 2026. The highlighted bar marks where Jan Schmidt sits on this spectrum.

40–41 D-Index: 211 scientists 42–43 D-Index: 450 scientists 44–45 D-Index: 612 scientists 46–47 D-Index: 612 scientists 48–49 D-Index: 598 scientists 50–51 D-Index: 657 scientists 52–53 D-Index: 667 scientists 54–55 D-Index: 621 scientists 56–57 D-Index: 597 scientists 58–59 D-Index: 610 scientists 60–61 D-Index: 587 scientists 62–63 D-Index: 606 scientists 64–65 D-Index: 533 scientists 66–67 D-Index: 490 scientists 68–69 D-Index: 469 scientists 70–71 D-Index: 378 scientists 72–73 D-Index: 421 scientists 74–75 D-Index: 359 scientists 76–77 D-Index: 323 scientists 78–79 D-Index: 299 scientists 80–81 D-Index: 230 scientists 82–83 D-Index: 210 scientists 84–85 D-Index: 195 scientists 86–87 D-Index: 203 scientists 88–89 D-Index: 175 scientists 90–91 D-Index: 175 scientists 92–93 D-Index: 142 scientists 94–95 D-Index: 121 scientists 96–97 D-Index: 117 scientists 98–99 D-Index: 107 scientists 100–101 D-Index: 88 scientists 102–103 D-Index: 85 scientists 104–105 D-Index: 68 scientists 106–107 D-Index: 62 scientists 108–109 D-Index: 57 scientists 110–111 D-Index: 45 scientists 112–113 D-Index: 49 scientists 114–115 D-Index: 50 scientists 116–117 D-Index: 34 scientists 118–119 D-Index: 38 scientists 120–121 D-Index: 37 scientists 122–123 D-Index: 29 scientists 124–125 D-Index: 28 scientists 126–127 D-Index: 24 scientists 128–129 D-Index: 33 scientists 130–131 D-Index: 28 scientists 132–133 D-Index: 21 scientists 134–135 D-Index: 20 scientists 136–137 D-Index: 23 scientists 138–139 D-Index: 17 scientists 140–141 D-Index: 12 scientists 142–143 D-Index: 17 scientists 144–145 D-Index: 21 scientists 146–147 D-Index: 13 scientists 148–149 D-Index: 11 scientists 150–151 D-Index: 14 scientists 152–153 D-Index: 13 scientists 154–155 D-Index: 9 scientists 156–157 D-Index: 10 scientists 158–159 D-Index: 7 scientists 160–161 D-Index: 4 scientists 162–163 D-Index: 4 scientists 164 D-Index: 3 scientists 165+ D-Index: 98 scientists
40 D-Index 165+

This scientist: 74 D-Index — 72nd percentile

72% of scientists in this discipline score the same or lower.

The last bar groups every scientist with 165 D-Index or more.

Overview

Jan Schmidt is affiliated with the University of Hannover in Germany and specializes in the field of Engineering, with a particular focus on Electrical and Electronic Engineering. Their research spans several subfields including Atomic and Molecular Physics, and Optics, as well as Materials Chemistry.

The primary topics of Schmidt's work encompass a range of semiconductor and solar cell technologies. These topics include Silicon and Solar Cell Technologies, Semiconductor materials and interfaces, Thin-Film Transistor Technologies, Chalcogenide Semiconductor Thin Films, Semiconductor materials and devices, Integrated Circuits and Semiconductor Failure Analysis, and Quantum Dots Synthesis and Properties.

Schmidt has contributed to multiple research papers, some of which have been published in well-known journals. Recent notable papers are:

  • "Reassessment of the intrinsic bulk recombination in crystalline silicon," 2021, Solar Energy Materials and Solar Cells
  • "Ultra-thin passivation layers in Cu(In,Ga)Se2 thin-film solar cells: full-area passivated front contacts and their impact on bulk doping," 2020, Scientific Reports
  • "Atomic-Layer-Deposited Al2O3 as Effective Barrier against the Diffusion of Hydrogen from SiNx:H Layers into Crystalline Silicon during Rapid Thermal Annealing," 2020, physica status solidi (RRL) - Rapid Research Letters
  • "Degradation and Regeneration of n +-Doped Poly-Si Surface Passivation on p-Type and n-Type Cz-Si Under Illumination and Dark Annealing," 2020, IEEE Journal of Photovoltaics
  • "Oxidation as Key Mechanism for Efficient Interface Passivation in Cu(In,Ga)Se2 Thin-Film Solar Cells," 2020, Physical Review Applied

Frequent coauthors collaborating with Schmidt include:

  • Dominic Walter
  • Michael Winter
  • Boris Veith-Wolf
  • Valeriya Titova
  • Susanne Siebentritt

Schmidt's research has been published predominantly in journals such as Scientific Reports, physica status solidi (RRL) - Rapid Research Letters, IEEE Journal of Photovoltaics, Solar Energy Materials and Solar Cells, and Physical Review Applied.

Best Publications

  • Improved quantitative description of Auger recombination in crystalline silicon

    Armin Richter;Stefan W. Glunz;Florian Werner;Jan Schmidt

  • Silicon surface passivation by atomic layer deposited Al2O3

    B Bram Hoex;J Jeroen Schmidt;P Pohl;van de Mcm Richard Sanden

  • Surface passivation of high‐efficiency silicon solar cells by atomic‐layer‐deposited Al2O3

    J Jeroen Schmidt;A Merkle;R Brendel;B Bram Hoex

  • Excellent passivation of highly doped p-type Si surfaces by the negative-charge-dielectric Al2O3

    B Bram Hoex;J Jeroen Schmidt;R Bock;PP Altermatt

  • Structure and transformation of the metastable boron- and oxygen-related defect center in crystalline silicon

    Jan Schmidt;Karsten Bothe

  • Uncertainty analysis for the coefficient of band-to-band absorption of crystalline silicon

    Carsten Schinke;P. Christian Peest;Jan Schmidt;Rolf Brendel

  • Electronically activated boron-oxygen-related recombination centers in crystalline silicon

    Karsten Bothe;Jan Schmidt

  • Record low surface recombination velocities on 1 Ω cm p‐silicon using remote plasma silicon nitride passivation

    Thomas Lauinger;Jan Schmidt;Armin G. Aberle;Rudolf Hezel

  • Surface passivation of crystalline silicon solar cells: Present and future

    Jan Schmidt;Robby Peibst;Rolf Brendel

  • Fundamental boron-oxygen-related carrier lifetime limit in mono- and multicrystalline silicon

    Karsten Bothe;Ron Sinton;Jan Schmidt

  • Surface passivation of silicon solar cells using plasma-enhanced chemical-vapour-deposited SiN films and thin thermal SiO2/plasma SiN stacks

    Jan Schmidt;Mark John Kerr;Andres Cuevas

  • Investigation of carrier lifetime instabilities in Cz-grown silicon

    J. Schmidt;A.G. Aberle;R. Hezel

  • Surface recombination velocity of phosphorus-diffused silicon solar cell emitters passivated with plasma enhanced chemical vapor deposited silicon nitride and thermal silicon oxide

    M. J. Kerr;J. Schmidt;A. Cuevas;J. H. Bultman

  • 19%‐efficient and 43 µm‐thick crystalline Si solar cell from layer transfer using porous silicon

    Jan Hendrik Petermann;Dimitri Zielke;Jan Schmidt;Felix Haase

  • Electronic properties of light-induced recombination centers in boron-doped Czochralski silicon

    Jan Schmidt;Andrés Cuevas

  • Electronic and chemical properties of the c-Si/Al2O3 interface

    Florian Werner;Boris Veith;Dimitri Zielke;Lisa Kühnemund

  • ACCURATE METHOD FOR THE DETERMINATION OF BULK MINORITY-CARRIER LIFETIMES OF MONO- AND MULTICRYSTALLINE SILICON WAFERS

    Jan Schmidt;Armin G. Aberle

  • Effective surface passivation of crystalline silicon using ultrathin Al2O3 films and Al2O3/SiNx stacks

    Jan Schmidt;Boris Veith;Rolf Brendel

  • Carrier recombination at silicon–silicon nitride interfaces fabricated by plasma-enhanced chemical vapor deposition

    Jan Schmidt;Armin G. Aberle

  • Industrial Silicon Solar Cells Applying the Passivated Emitter and Rear Cell (PERC) Concept—A Review

    Thorsten Dullweber;Jan Schmidt

  • Highest-quality surface passivation of low-resistivity p-type silicon using stoichiometric PECVD silicon nitride

    Jan Schmidt;Mark John Kerr

Frequent Co-Authors

Rolf Brendel
Rolf Brendel University of Hannover
Andres Cuevas
Andres Cuevas Australian National University
Daniel Macdonald
Daniel Macdonald Australian National University
Armin G. Aberle
Armin G. Aberle National University of Singapore
Bram Hoex
Bram Hoex University of New South Wales
H.J. Osten
H.J. Osten University of Hannover
van de Mcm Richard Sanden
van de Mcm Richard Sanden Eindhoven University of Technology
Stefan W. Glunz
Stefan W. Glunz Fraunhofer Institute for Solar Energy Systems
Wmm Erwin Kessels
Wmm Erwin Kessels Eindhoven University of Technology

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