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Materials Science

D-Index
74
Citations
18998
World Ranking
3660
National Ranking
204

Overview

Jan Schmidt is affiliated with the University of Hannover in Germany and specializes in the field of Engineering, with a particular focus on Electrical and Electronic Engineering. Their research spans several subfields including Atomic and Molecular Physics, and Optics, as well as Materials Chemistry.

The primary topics of Schmidt's work encompass a range of semiconductor and solar cell technologies. These topics include Silicon and Solar Cell Technologies, Semiconductor materials and interfaces, Thin-Film Transistor Technologies, Chalcogenide Semiconductor Thin Films, Semiconductor materials and devices, Integrated Circuits and Semiconductor Failure Analysis, and Quantum Dots Synthesis and Properties.

Schmidt has contributed to multiple research papers, some of which have been published in well-known journals. Recent notable papers are:

  • "Reassessment of the intrinsic bulk recombination in crystalline silicon," 2021, Solar Energy Materials and Solar Cells
  • "Ultra-thin passivation layers in Cu(In,Ga)Se2 thin-film solar cells: full-area passivated front contacts and their impact on bulk doping," 2020, Scientific Reports
  • "Atomic-Layer-Deposited Al2O3 as Effective Barrier against the Diffusion of Hydrogen from SiNx:H Layers into Crystalline Silicon during Rapid Thermal Annealing," 2020, physica status solidi (RRL) - Rapid Research Letters
  • "Degradation and Regeneration of n +-Doped Poly-Si Surface Passivation on p-Type and n-Type Cz-Si Under Illumination and Dark Annealing," 2020, IEEE Journal of Photovoltaics
  • "Oxidation as Key Mechanism for Efficient Interface Passivation in Cu(In,Ga)Se2 Thin-Film Solar Cells," 2020, Physical Review Applied

Frequent coauthors collaborating with Schmidt include:

  • Dominic Walter
  • Michael Winter
  • Boris Veith-Wolf
  • Valeriya Titova
  • Susanne Siebentritt

Schmidt's research has been published predominantly in journals such as Scientific Reports, physica status solidi (RRL) - Rapid Research Letters, IEEE Journal of Photovoltaics, Solar Energy Materials and Solar Cells, and Physical Review Applied.

Best Publications

  • Improved quantitative description of Auger recombination in crystalline silicon

    Armin Richter;Stefan W. Glunz;Florian Werner;Jan Schmidt

  • Silicon surface passivation by atomic layer deposited Al2O3

    B Bram Hoex;J Jeroen Schmidt;P Pohl;van de Mcm Richard Sanden

  • Surface passivation of high‐efficiency silicon solar cells by atomic‐layer‐deposited Al2O3

    J Jeroen Schmidt;A Merkle;R Brendel;B Bram Hoex

  • Excellent passivation of highly doped p-type Si surfaces by the negative-charge-dielectric Al2O3

    B Bram Hoex;J Jeroen Schmidt;R Bock;PP Altermatt

  • Structure and transformation of the metastable boron- and oxygen-related defect center in crystalline silicon

    Jan Schmidt;Karsten Bothe

  • Uncertainty analysis for the coefficient of band-to-band absorption of crystalline silicon

    Carsten Schinke;P. Christian Peest;Jan Schmidt;Rolf Brendel

  • Electronically activated boron-oxygen-related recombination centers in crystalline silicon

    Karsten Bothe;Jan Schmidt

  • Record low surface recombination velocities on 1 Ω cm p‐silicon using remote plasma silicon nitride passivation

    Thomas Lauinger;Jan Schmidt;Armin G. Aberle;Rudolf Hezel

  • Surface passivation of crystalline silicon solar cells: Present and future

    Jan Schmidt;Robby Peibst;Rolf Brendel

  • Fundamental boron-oxygen-related carrier lifetime limit in mono- and multicrystalline silicon

    Karsten Bothe;Ron Sinton;Jan Schmidt

  • Surface passivation of silicon solar cells using plasma-enhanced chemical-vapour-deposited SiN films and thin thermal SiO2/plasma SiN stacks

    Jan Schmidt;Mark John Kerr;Andres Cuevas

  • Investigation of carrier lifetime instabilities in Cz-grown silicon

    J. Schmidt;A.G. Aberle;R. Hezel

  • Surface recombination velocity of phosphorus-diffused silicon solar cell emitters passivated with plasma enhanced chemical vapor deposited silicon nitride and thermal silicon oxide

    M. J. Kerr;J. Schmidt;A. Cuevas;J. H. Bultman

  • 19%‐efficient and 43 µm‐thick crystalline Si solar cell from layer transfer using porous silicon

    Jan Hendrik Petermann;Dimitri Zielke;Jan Schmidt;Felix Haase

  • Electronic properties of light-induced recombination centers in boron-doped Czochralski silicon

    Jan Schmidt;Andrés Cuevas

  • Electronic and chemical properties of the c-Si/Al2O3 interface

    Florian Werner;Boris Veith;Dimitri Zielke;Lisa Kühnemund

  • ACCURATE METHOD FOR THE DETERMINATION OF BULK MINORITY-CARRIER LIFETIMES OF MONO- AND MULTICRYSTALLINE SILICON WAFERS

    Jan Schmidt;Armin G. Aberle

  • Effective surface passivation of crystalline silicon using ultrathin Al2O3 films and Al2O3/SiNx stacks

    Jan Schmidt;Boris Veith;Rolf Brendel

  • Carrier recombination at silicon–silicon nitride interfaces fabricated by plasma-enhanced chemical vapor deposition

    Jan Schmidt;Armin G. Aberle

  • Industrial Silicon Solar Cells Applying the Passivated Emitter and Rear Cell (PERC) Concept—A Review

    Thorsten Dullweber;Jan Schmidt

  • Highest-quality surface passivation of low-resistivity p-type silicon using stoichiometric PECVD silicon nitride

    Jan Schmidt;Mark John Kerr

Frequent Co-Authors

Rolf Brendel
Rolf Brendel University of Hannover
Andres Cuevas
Andres Cuevas Australian National University
Daniel Macdonald
Daniel Macdonald Australian National University
Armin G. Aberle
Armin G. Aberle National University of Singapore
Bram Hoex
Bram Hoex University of New South Wales
H.J. Osten
H.J. Osten University of Hannover
van de Mcm Richard Sanden
van de Mcm Richard Sanden Eindhoven University of Technology
Stefan W. Glunz
Stefan W. Glunz Fraunhofer Institute for Solar Energy Systems
Wmm Erwin Kessels
Wmm Erwin Kessels Eindhoven University of Technology

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