H.J. Osten

Overview

Best Publications

• High-k gate dielectrics with ultra-low leakage current based on praseodymium oxide

  H.J. Osten;J.P. Liu;P. Gaworzewski;E. Bugiel

  213
  Citations

• Epitaxial praseodymium oxide: a new high-K dielectric

  H.J. Osten;E. Bugiel;A. Fissel

  204
  Citations

• SUPPRESSED DIFFUSION OF BORON AND CARBON IN CARBON-RICH SILICON

  H. Rücker;B. Heinemann;W. Röpke;R. Kurps

  181
  Citations

• Growth of an inverse tetragonal distorted SiGe layer on Si(001) by adding small amounts of carbon

  H. J. Osten;E. Bugiel;P. Zaumseil

  168
  Citations

• Strain-stabilized highly concentrated pseudomorphic Si1-xCx layers in Si.

  H Rücker;M Methfessel;E Bugiel;HJ Osten

  151
  Citations

• Substitutional versus interstitial carbon incorporation during pseudomorphic growth of Si1−yCy on Si(001)

  H. J. Osten;Myeongcheol Kim;K. Pressel;P. Zaumseil

  148
  Citations

• Epitaxial growth of Pr2O3 on Si(111) and the observation of a hexagonal to cubic phase transition during postgrowth N2 annealing

  J. P. Liu;P. Zaumseil;E. Bugiel;H. J. Osten

  140
  Citations

• Impact of oxygen supply during growth on the electrical properties of crystalline Gd2O3 thin films on Si(001)

  M. Czernohorsky;E. Bugiel;H. J. Osten;A. Fissel

  137
  Citations

• Photoemission and ab initio theoretical study of interface and film formation during epitaxial growth and annealing of praseodymium oxide on Si(001)

  A. Fissel;J. Da̧browski;H. J. Osten

  135
  Citations

• Interface formation during molecular beam epitaxial growth of neodymium oxide on silicon

  A. Fissel;Z. Elassar;O. Kirfel;E. Bugiel

  129
  Citations

• Surfactant-controlled solid phase epitaxy of germanium on silicon

  H. J. Osten;J. Klatt;G. Lippert;B. Dietrich

  117
  Citations

• Lattice distortion in a strain-compensated Si1-x-yGexCy layer on silicon.

  Dietrich B;Osten Hj;Rücker H;Methfessel M

  116
  Citations

• Epitaxial praseodymium oxide: a new high-k dielectric

  H.J. Osten;E. Bugiel;A. Fissel;T. Guminskaya

  104
  Citations

• Introducing crystalline rare-earth oxides into Si technologies

  H. J. Osten;A. Laha;M. Czernohorsky;E. Bugiel

  102
  Citations

• Measurement of stress and relaxation in Si1−xGex layers by Raman line shift and x‐ray diffraction

  B. Dietrich;E. Bugiel;J. Klatt;G. Lippert

  96
  Citations

• Towards understanding epitaxial growth of alternative high-K dielectrics on Si(001): Application to praseodymium oxide

  A. Fissel;H. J. Osten;E. Bugiel

  89
  Citations

• Influence of interface layer composition on the electrical properties of epitaxial Gd2O3 thin films for high-K application

  Apurba Laha;H. J. Osten;A. Fissel

  87
  Citations

• Phonons as a probe of short-range order in Si1-xCx alloys.

  H Rücker;M Methfessel;B Dietrich;K Pressel

  79
  Citations

• Improvement of the SRH bulk lifetime upon formation of n-type POLO junctions for 25% efficient Si solar cells

  Jan Krügener;Felix Haase;Michael Rienäcker;Rolf Brendel

  78
  Citations

• Observation of the formation of a carbon-rich surface layer in silicon.

  Osten Hj;Methfessel M;Lippert G;Rücker H

  77
  Citations