World's Best Scientists 2026 revealed!

D-Index & Metrics

Materials Science

D-Index
48
Citations
9924
World Ranking
10765
National Ranking
48

Overview

Julian Stangl is affiliated with Johannes Kepler University of Linz in Austria. Their research primarily spans engineering and materials science, with particular emphasis on electrical and electronic engineering, biomedical engineering, and materials chemistry.

The scientist's work focuses notably on semiconductor materials and devices, nanowire synthesis and applications, and silicon nanostructures and photoluminescence. These topics reflect a concentration on understanding and developing advanced materials at the nanoscale for potential technological applications.

Julian Stangl has contributed to the scientific literature through papers published in recognized venues. A significant publication is titled "Direct-bandgap emission from hexagonal Ge and SiGe alloys", published in 2020 in Nature. This paper has received notable attention within the scientific community.

Collaboration is also a feature of their research profile, with several frequent coauthors involved in related studies. These coauthors include:

  • Elham Fadaly
  • Alain Dijkstra
  • Jens Renè Suckert
  • Dorian Ziss
  • Marvin A. J. van Tilburg

Best Publications

  • Detection of X-ray photons by solution-processed lead halide perovskites

    Sergii Yakunin;Mykhailo Sytnyk;Dominik Kriegner;Shreetu Shrestha

  • Structural properties of self-organized semiconductor nanostructures

    J. Stangl;V. Holý;G. Bauer

  • Direct-bandgap emission from hexagonal Ge and SiGe alloys

    Elham M. T. Fadaly;Alain Dijkstra;Jens Renè Suckert;Dorian Ziss

  • Au-free epitaxial growth of InAs nanowires.

    Bernhard Mandl;Julian Stangl;Thomas Martensson;Anders Mikkelsen

  • Nanometer-scale resolution of strain and interdiffusion in self-assembled InAs/GaAs quantum dots

    I. Kegel;T. H. Metzger;A. Lorke;J. Peisl

  • Growth Mechanism of Self-Catalyzed Group III−V Nanowires

    Bernhard Mandl;Julian Stangl;Emelie Hilner;Alexei A. Zakharov

  • Colloidal HgTe nanocrystals with widely tunable narrow band gap energies : From telecommunications to molecular vibrations

    Maksym V. Kovalenko;Erich Kaufmann;Dietmar Pachinger;Jürgen Roither

  • Three-dimensional Si/Ge quantum dot crystals.

    Detlev Grützmacher;Thomas Fromherz;Christian Dais;Julian Stangl

  • Determination of strain fields and composition of self-organized quantum dots using x-ray diffraction

    I. Kegel;T. H. Metzger;A. Lorke;J. Peisl

  • Hexagonal silicon realized

    Håkon Ikaros T. Hauge;Marcel A. Verheijen;Marcel A. Verheijen;Sonia Conesa-Boj;Tanja Etzelstorfer

  • A light-hole exciton in a quantum dot

    Yongheng Huo;B. J. Witek;Santosh Kumar;J. R. Cardenas

  • Unit Cell Structure of Crystal Polytypes in InAs and InSb Nanowires

    Dominik Kriegner;Christian Panse;Bernhard Mandl;Kimberly A. Dick

  • Direct determination of strain and composition profiles in SiGe islands by anomalous x-Ray diffraction at high momentum transfer.

    T. U. Schülli;T. U. Schülli;J. Stangl;Z. Zhong;R. T. Lechner

  • Three-dimensional high-resolution quantitative microscopy of extended crystals

    Pierre Godard;G. Carbone;Marc Allain;Francesca Mastropietro

  • High-resolution x-ray diffraction from multilayered self-assembled Ge dots

    AA Anton Darhuber;P Schittenhelm;V Holy;J Stangl

  • LATTICE PARAMETER IN SI1-YCY EPILAYERS: DEVIATION FROM VEGARD'S RULE

    M. Berti;D. De Salvador;A. V. Drigo;F. Romanato

  • Unraveling the Core–Shell Structure of Ligand-Capped Sn/SnOx Nanoparticles by Surface-Enhanced Nuclear Magnetic Resonance, Mössbauer, and X-ray Absorption Spectroscopies

    Loredana Protesescu;Loredana Protesescu;Aaron J. Rossini;Dominik Kriegner;Maxence Valla

  • Epitaxial Growth of Indium Arsenide Nanowires on Silicon Using Nucleation Templates Formed by Self‐Assembled Organic Coatings

    Thomas Martensson;Thomas Martensson;Jakob B. Wagner;Emelie Hilner;Anders Mikkelsen

  • Raman spectroscopy determination of composition and strain in Si1-xGex/Si heterostructures

    F. Pezzoli;E. Bonera;E. Grilli;M. Guzzi

  • Tuning the magnetic properties of metal oxide nanocrystal heterostructures by cation exchange.

    Mykhailo Sytnyk;Raimund Kirchschlager;Maryna I. Bodnarchuk;Daniel Primetzhofer

  • Gold-Free Ternary III-V Antimonide Nanowire Arrays on Silicon: Twin-Free down to the First Bilayer

    Sònia Conesa-Boj;Dominik Kriegner;Xiang-Lei Han;Sébastien Plissard

  • Effect of overgrowth on shape, composition, and strain of SiGe islands on Si(001)

    A. Hesse;J. Stangl;V. Holý;T. Roch

Frequent Co-Authors

G. Bauer
G. Bauer Johannes Kepler University of Linz
Friedrich Schäffler
Friedrich Schäffler Johannes Kepler University of Linz
Giovanni Isella
Giovanni Isella Polytechnic University of Milan
Oliver G. Schmidt
Oliver G. Schmidt Chemnitz University of Technology
Gerhard Abstreiter
Gerhard Abstreiter Technical University of Munich
H. von Känel
H. von Känel ETH Zurich
Douglas J. Paul
Douglas J. Paul University of Glasgow
Lars Samuelson
Lars Samuelson Lund University
Detlev Grützmacher
Detlev Grützmacher Forschungszentrum Jülich
Armando Rastelli
Armando Rastelli Johannes Kepler University of Linz

If you think any of the details on this page are incorrect, let us know.

Report an issue

We appreciate your kind effort to assist us to improve this page, it would be helpful providing us with as much detail as possible in the text box below:

Best Scientists Citing Julian Stangl

Trending Scientists

Recently Published Articles