2026 H. von Känel: Materials Science Researcher – H-Index, Publications & Awards

Discipline name	D-Index	World Ranking	Current World Ranking	National Ranking	Current National Ranking	Publications	Citations
Materials Science	53	9331	9009	133	126	350	8445

H. von Känel publication distribution in Materials Science in 2026

The chart shows the distribution of publications by all Research.com ranked scientists in the field of Materials Science in 2026. The highlighted bar marks where H. von Känel sits on this spectrum.

50 publications 1,163+

This scientist: 350 publications — 70th percentile

70% of scientists in this discipline score the same or lower.

The last bar groups every scientist with 1,163 publications or more.

H. von Känel D-index placement in Materials Science in 2026

The chart shows the D-index (discipline H-index) distribution of Materials Science scientists ranked by Research.com in 2026. The highlighted bar marks where H. von Känel sits on this spectrum.

40 D-Index 165+

This scientist: 53 D-Index — 30th percentile

30% of scientists in this discipline score the same or lower.

The last bar groups every scientist with 165 D-Index or more.

Overview

H. von Känel is affiliated with ETH Zurich in Switzerland and has contributed to the fields of Engineering and Materials Science, with a specific focus on subfields such as Electrical and Electronic Engineering, Materials Chemistry, and Structural Biology.

The main topics explored in von Känel's research include:

Silicon Nanostructures and Photoluminescence
Advanced Electron Microscopy Techniques and Applications
Integrated Circuits and Semiconductor Failure Analysis
Thin-Film Transistor Technologies
Silicon and Solar Cell Technologies
3D IC and TSV technologies
Advancements in Semiconductor Devices and Circuit Design

Von Känel's recent papers cover several specialized aspects of crystallography and semiconductor technologies. These publications are:

"The Radon transform as a tool for 3D reciprocal-space mapping of epitaxial microcrystals," 2022, Journal of Applied Crystallography
"X-ray rocking curve imaging on large arrays of extremely tall SiGe microcrystals epitaxial on Si," 2021, Journal of Applied Crystallography
"A GaAs/Si X-Ray Pixel Detector Based on Low Temperature Covalent Wafer Bonding," 2020, ECS Meeting Abstracts

The frequent coauthors collaborating with von Känel include:

Franco Bressan
Mojmír Meduňa
Fabio Isa
Ondřej Caha

Von Känel's work has been published most often in the following venues:

Journal of Applied Crystallography
ECS Meeting Abstracts

Best Publications

Growth and characterization of epitaxial Ni and Co silicides

H. von Känel

227
Citations
Barrierless formation and faceting of SiGe islands on Si(001).

J. Tersoff;B. J. Spencer;A. Rastelli;H. von Känel;H. von Känel

225
Citations
Structural and electronic properties of metastable epitaxial FeSi1+x films on Si(111).

H. von Känel;K. A. Mäder;E. Müller;N. Onda

214
Citations
Low-energy plasma-enhanced chemical vapor deposition for strained Si and Ge heterostructures and devices

G. Isella;D. Chrastina;B. Rössner;T. Hackbarth

210
Citations
Reversible shape evolution of Ge islands on Si(001).

A. Rastelli;M. Kummer;H. von Känel

209
Citations
Silicon epitaxy by low-energy plasma enhanced chemical vapor deposition

C. Rosenblad;H. R. Deller;A. Dommann;T. Meyer

190
Citations
High hole mobility in Si0.17Ge0.83 channel metal–oxide–semiconductor field-effect transistors grown by plasma-enhanced chemical vapor deposition

G. Höck;E. Kohn;C. Rosenblad;H. von Känel

185
Citations
Atomic-scale pathway of the pyramid-to-dome transition during Ge growth on Si(001)

F. Montalenti;P. Raiteri;D. B. Migas;H. von Känel

151
Citations
Epitaxy of fluorite-structure silicides: metastable cubic FeSi2 on Si(111)

N. Onda;J. Henz;E. Müller;K.A. Mäder

145
Citations
Critical Role of the Surface Reconstruction in the Thermodynamic Stability of { 105 } Ge Pyramids on Si(001)

P. Raiteri;D. B. Migas;Leo Miglio;A. Rastelli

139
Citations
Universal shapes of self-organized semiconductor quantum dots: Striking similarities between InAs∕GaAs(001) and Ge∕Si(001)

G. Costantini;A. Rastelli;C. Manzano;R. Songmuang

128
Citations
Ultralow dark current Ge/Si(100) photodiodes with low thermal budget

J. Osmond;G. Isella;D. Chrastina;R. Kaufmann

122
Citations
Very high hole mobilities in modulation-doped Ge quantum wells grown by low-energy plasma enhanced chemical vapor deposition

Hans von Känel;Matthias Kummer;Giovanni Isella;Elisabeth Müller

120
Citations
Surface evolution of faceted islands

Armando Rastelli;Hans von Känel;Hans von Känel

118
Citations
Phase transition from pseudomorphic FeSi 2 to β- FeSi 2 /Si(111) studied by in situ scanning tunneling microscopy

H. Sirringhaus;N. Onda;E. Müller-Gubler;P. Müller

115
Citations
Alternatives to thick MBE-grown relaxed SiGe buffers

T Hackbarth;H.-J Herzog;M Zeuner;G Höck

114
Citations
Scattering mechanisms in high-mobility strained Ge channels

B. Rössner;D. Chrastina;G. Isella;H. von Känel

113
Citations
Raman spectroscopy determination of composition and strain in Si1-xGex/Si heterostructures

F. Pezzoli;E. Bonera;E. Grilli;M. Guzzi

113
Citations
A plasma process for ultrafast deposition of SiGe graded buffer layers

C. Rosenblad;H. von Känel;M. Kummer;A. Dommann

110
Citations
Monolayer resolution by means of x-ray interference in semiconductor heterostructures

L. Tapfer;M. Ospelt;H. von Känel

105
Citations
Strain relaxation of GaAs/Ge crystals on patterned Si substrates

A. G. Taboada;T. Kreiliger;C. V. Falub;F. Isa

25
Citations