H. von Känel

Overview

Best Publications

• Growth and characterization of epitaxial Ni and Co silicides

  H. von Känel

  227
  Citations

• Barrierless formation and faceting of SiGe islands on Si(001).

  J. Tersoff;B. J. Spencer;A. Rastelli;H. von Känel;H. von Känel

  225
  Citations

• Structural and electronic properties of metastable epitaxial FeSi1+x films on Si(111).

  H. von Känel;K. A. Mäder;E. Müller;N. Onda

  214
  Citations

• Low-energy plasma-enhanced chemical vapor deposition for strained Si and Ge heterostructures and devices

  G. Isella;D. Chrastina;B. Rössner;T. Hackbarth

  210
  Citations

• Reversible shape evolution of Ge islands on Si(001).

  A. Rastelli;M. Kummer;H. von Känel

  209
  Citations

• Silicon epitaxy by low-energy plasma enhanced chemical vapor deposition

  C. Rosenblad;H. R. Deller;A. Dommann;T. Meyer

  190
  Citations

• High hole mobility in Si0.17Ge0.83 channel metal–oxide–semiconductor field-effect transistors grown by plasma-enhanced chemical vapor deposition

  G. Höck;E. Kohn;C. Rosenblad;H. von Känel

  185
  Citations

• Atomic-scale pathway of the pyramid-to-dome transition during Ge growth on Si(001)

  F. Montalenti;P. Raiteri;D. B. Migas;H. von Känel

  151
  Citations

• Epitaxy of fluorite-structure silicides: metastable cubic FeSi2 on Si(111)

  N. Onda;J. Henz;E. Müller;K.A. Mäder

  145
  Citations

• Critical Role of the Surface Reconstruction in the Thermodynamic Stability of { 105 } Ge Pyramids on Si(001)

  P. Raiteri;D. B. Migas;Leo Miglio;A. Rastelli

  139
  Citations

• Universal shapes of self-organized semiconductor quantum dots: Striking similarities between InAs∕GaAs(001) and Ge∕Si(001)

  G. Costantini;A. Rastelli;C. Manzano;R. Songmuang

  128
  Citations

• Ultralow dark current Ge/Si(100) photodiodes with low thermal budget

  J. Osmond;G. Isella;D. Chrastina;R. Kaufmann

  122
  Citations

• Very high hole mobilities in modulation-doped Ge quantum wells grown by low-energy plasma enhanced chemical vapor deposition

  Hans von Känel;Matthias Kummer;Giovanni Isella;Elisabeth Müller

  120
  Citations

• Surface evolution of faceted islands

  Armando Rastelli;Hans von Känel;Hans von Känel

  118
  Citations

• Phase transition from pseudomorphic FeSi 2 to β- FeSi 2 /Si(111) studied by in situ scanning tunneling microscopy

  H. Sirringhaus;N. Onda;E. Müller-Gubler;P. Müller

  115
  Citations

• Alternatives to thick MBE-grown relaxed SiGe buffers

  T Hackbarth;H.-J Herzog;M Zeuner;G Höck

  114
  Citations

• Scattering mechanisms in high-mobility strained Ge channels

  B. Rössner;D. Chrastina;G. Isella;H. von Känel

  113
  Citations

• Raman spectroscopy determination of composition and strain in Si1-xGex/Si heterostructures

  F. Pezzoli;E. Bonera;E. Grilli;M. Guzzi

  113
  Citations

• A plasma process for ultrafast deposition of SiGe graded buffer layers

  C. Rosenblad;H. von Känel;M. Kummer;A. Dommann

  110
  Citations

• Monolayer resolution by means of x-ray interference in semiconductor heterostructures

  L. Tapfer;M. Ospelt;H. von Känel

  105
  Citations

• Strain relaxation of GaAs/Ge crystals on patterned Si substrates

  A. G. Taboada;T. Kreiliger;C. V. Falub;F. Isa

  25
  Citations