World's Best Scientists 2026 revealed!
André Vantomme

André Vantomme

D-Index & Metrics

Materials Science

D-Index
50
Citations
11204
World Ranking
10125
National Ranking
114

Overview

André Vantomme is affiliated with KU Leuven in Belgium and has contributed to numerous research areas primarily within engineering and physics. Their work spans multiple fields, including electrical and electronic engineering, atomic and molecular physics and optics, materials chemistry, computational mechanics, and radiation.

The scientist has a significant number of publications related to semiconductor materials and interfaces, silicon and solar cell technologies, ion-surface interactions and analysis, semiconductor materials and devices, electronic and structural properties of oxides, thin-film transistor technologies, and electron and X-ray spectroscopy techniques.

Frequent co-authors of André Vantomme include Clément Porret, L. M. C. Pereira, R. J. H. Morris, Roger Loo, and Andriy Hikavyy, reflecting ongoing collaborative research efforts.

André Vantomme's recent papers provide insight into various specialized study areas:

  • Observation of the radiative decay of the 229Th nuclear clock isomer, 2023, Nature
  • Acid-Base Mediated Ligand Exchange on Near-Infrared Absorbing, Indium-Based III-V Colloidal Quantum Dots, 2021, Journal of the American Chemical Society
  • Direct Structural Identification and Quantification of the Split-Vacancy Configuration for Implanted Sn in Diamond, 2020, Physical Review Letters
  • Magnesium-Vacancy Optical Centers in Diamond, 2022, ACS Photonics
  • The influence of phonon softening on the superconducting critical temperature of Sn nanostructures, 2020, Scientific Reports

They have frequently published in venues such as ECS Meeting Abstracts, Scientific Reports, ECS Transactions, Nuclear Instruments and Methods in Physics Research Section B Beam Interactions with Materials and Atoms, and Chemistry of Materials.

Best Publications

  • Size-dependent optical properties of colloidal PbS quantum dots.

    Iwan Moreels;Karel Lambert;Dries Smeets;David De Muynck

  • Light Absorption Coefficient of CsPbBr3 Perovskite Nanocrystals.

    Jorick Maes;Lieve Balcaen;Emile Drijvers;Qiang Zhao

  • Binding of phosphonic acids to CdSe quantum dots : a solution NMR study

    Raquel Gomes;Antti Hassinen;Agnieszka Szczygiel;Qiang Zhao

  • Crystalline Properties and Strain Relaxation Mechanism of CVD Grown GeSn

    F. Gencarelli;B. Vincent;J. Demeulemeester;A. Vantomme

  • Selective Removal of N‐Heterocyclic Aromatic Contaminants from Fuels by Lewis Acidic Metal–Organic Frameworks

    Michael Maes;Maarten Trekels;Mohammed Boulhout;Stijn Schouteden

  • Cooperative Catalysis for Multistep Biomass Conversion with Sn/Al Beta Zeolite

    Jan Dijkmans;Michiel Dusselier;Dries Gabriëls;Kristof Houthoofd

  • Semiconducting Mg2Si thin films prepared by molecular-beam epitaxy.

    John E. Mahan;André Vantomme;Guido Langouche;James P. Becker

  • Characterization of GeSn materials for future Ge pMOSFETs source/drain stressors

    B. Vincent;Y. Shimura;S. Takeuchi;T. Nishimura

  • Multiferroic BaTiO 3 -BiFeO 3 composite thin films and multilayers: strain engineering and magnetoelectric coupling

    Michael Lorenz;Vera Lazenka;Peter Schwinkendorf;Francis Bern

  • Critical size for exchange bias in ferromagnetic-antiferromagnetic particles

    AN Dobrynin;DN Ievlev;Kristiaan Temst;Peter Lievens

  • Identification of the prime optical center in GaN:Eu3+

    I. S Roqan;K. P O'Donnell;R. W Martin;P. R Edwards

  • Compound phase formation in thin film structures

    René Pretorius;Christiaan C. Theron;André Vantomme;James W. Mayer

  • Growth mechanism and continuity of atomic layer deposited TiN films on thermal SiO2

    Alessandra Satta;Alessandra Satta;J Schuhmacher;CM Whelan;Wilfried Vandervorst

  • Independent tuning of size and coverage of supported Pt nanoparticles using atomic layer deposition.

    Jolien Dendooven;Ranjith K. Ramachandran;Eduardo Solano;Mert Kurttepeli

  • An Inner-/Outer-Sphere Stabilized Sn Active Site in β-Zeolite: Spectroscopic Evidence and Kinetic Consequences

    Jan Dijkmans;Michiel Dusselier;Wout Janssens;Maarten Trekels

  • Site location of Co in beta-FeSi2

    I Dezsi;C Fetzer;M Kiss;S Degroote

  • DIRECT EVIDENCE FOR TETRAHEDRAL INTERSTITIAL ER IN SI

    U. Wahl;A. Vantomme;J. De Wachter;R. Moons

  • Epitaxial CoSi2 films on Si(100) by solid‐phase reaction

    André Vantomme;Marc‐A. Nicolet;N. David Theodore

  • The Removal of Copper Oxides by Ethyl Alcohol Monitored In Situ by Spectroscopic Ellipsometry

    Alessandra Satta;Denis Shamiryan;Mikhaı̈l R. Baklanov;Caroline M. Whelan

  • Thin film growth of semiconducting Mg2Si by codeposition

    André Vantomme;John E. Mahan;Guido Langouche;James P. Becker

  • Optical energies of AlInN epilayers

    K Wang;R W Martin;D Amabile;P R Edwards

Frequent Co-Authors

Christophe Detavernier
Christophe Detavernier Ghent University
Karen Maex
Karen Maex University of Amsterdam
João P. Araújo
João P. Araújo University of Porto
Eduardo Alves
Eduardo Alves Instituto Superior Técnico
Timo Sajavaara
Timo Sajavaara University of Jyväskylä
Christian Lavoie
Christian Lavoie IBM (United States)

If you think any of the details on this page are incorrect, let us know.

Report an issue

We appreciate your kind effort to assist us to improve this page, it would be helpful providing us with as much detail as possible in the text box below:

Best Scientists Citing André Vantomme

Trending Scientists

Recently Published Articles