2026 André Vantomme: Materials Science Researcher – H-Index, Publications & Awards

Discipline name	D-Index	World Ranking	Current World Ranking	National Ranking	Current National Ranking	Publications	Citations
Materials Science	50	10123	9772	114	112	542	11204

André Vantomme publication distribution in Materials Science in 2026

The chart shows the distribution of publications by all Research.com ranked scientists in the field of Materials Science in 2026. The highlighted bar marks where André Vantomme sits on this spectrum.

50 publications 1,163+

This scientist: 542 publications — 89th percentile

89% of scientists in this discipline score the same or lower.

The last bar groups every scientist with 1,163 publications or more.

André Vantomme D-index placement in Materials Science in 2026

The chart shows the D-index (discipline H-index) distribution of Materials Science scientists ranked by Research.com in 2026. The highlighted bar marks where André Vantomme sits on this spectrum.

40 D-Index 165+

This scientist: 50 D-Index — 22nd percentile

22% of scientists in this discipline score the same or lower.

The last bar groups every scientist with 165 D-Index or more.

Overview

André Vantomme is affiliated with KU Leuven in Belgium and has contributed to numerous research areas primarily within engineering and physics. Their work spans multiple fields, including electrical and electronic engineering, atomic and molecular physics and optics, materials chemistry, computational mechanics, and radiation.

The scientist has a significant number of publications related to semiconductor materials and interfaces, silicon and solar cell technologies, ion-surface interactions and analysis, semiconductor materials and devices, electronic and structural properties of oxides, thin-film transistor technologies, and electron and X-ray spectroscopy techniques.

Frequent co-authors of André Vantomme include Clément Porret, L. M. C. Pereira, R. J. H. Morris, Roger Loo, and Andriy Hikavyy, reflecting ongoing collaborative research efforts.

André Vantomme's recent papers provide insight into various specialized study areas:

Observation of the radiative decay of the 229Th nuclear clock isomer, 2023, Nature
Acid-Base Mediated Ligand Exchange on Near-Infrared Absorbing, Indium-Based III-V Colloidal Quantum Dots, 2021, Journal of the American Chemical Society
Direct Structural Identification and Quantification of the Split-Vacancy Configuration for Implanted Sn in Diamond, 2020, Physical Review Letters
Magnesium-Vacancy Optical Centers in Diamond, 2022, ACS Photonics
The influence of phonon softening on the superconducting critical temperature of Sn nanostructures, 2020, Scientific Reports

They have frequently published in venues such as ECS Meeting Abstracts, Scientific Reports, ECS Transactions, Nuclear Instruments and Methods in Physics Research Section B Beam Interactions with Materials and Atoms, and Chemistry of Materials.

Best Publications

Size-dependent optical properties of colloidal PbS quantum dots.

Iwan Moreels;Karel Lambert;Dries Smeets;David De Muynck

1405
Citations
Light Absorption Coefficient of CsPbBr3 Perovskite Nanocrystals.

Jorick Maes;Lieve Balcaen;Emile Drijvers;Qiang Zhao

355
Citations
Binding of phosphonic acids to CdSe quantum dots : a solution NMR study

Raquel Gomes;Antti Hassinen;Agnieszka Szczygiel;Qiang Zhao

340
Citations
Crystalline Properties and Strain Relaxation Mechanism of CVD Grown GeSn

F. Gencarelli;B. Vincent;J. Demeulemeester;A. Vantomme

247
Citations
Selective Removal of N‐Heterocyclic Aromatic Contaminants from Fuels by Lewis Acidic Metal–Organic Frameworks

Michael Maes;Maarten Trekels;Mohammed Boulhout;Stijn Schouteden

212
Citations
Cooperative Catalysis for Multistep Biomass Conversion with Sn/Al Beta Zeolite

Jan Dijkmans;Michiel Dusselier;Dries Gabriëls;Kristof Houthoofd

209
Citations
Semiconducting Mg2Si thin films prepared by molecular-beam epitaxy.

John E. Mahan;André Vantomme;Guido Langouche;James P. Becker

166
Citations
Characterization of GeSn materials for future Ge pMOSFETs source/drain stressors

B. Vincent;Y. Shimura;S. Takeuchi;T. Nishimura

157
Citations
Multiferroic BaTiO 3 -BiFeO 3 composite thin films and multilayers: strain engineering and magnetoelectric coupling

Michael Lorenz;Vera Lazenka;Peter Schwinkendorf;Francis Bern

148
Citations
Critical size for exchange bias in ferromagnetic-antiferromagnetic particles

AN Dobrynin;DN Ievlev;Kristiaan Temst;Peter Lievens

142
Citations
Identification of the prime optical center in GaN:Eu3+

I. S Roqan;K. P O'Donnell;R. W Martin;P. R Edwards

135
Citations
Compound phase formation in thin film structures

René Pretorius;Christiaan C. Theron;André Vantomme;James W. Mayer

135
Citations
Growth mechanism and continuity of atomic layer deposited TiN films on thermal SiO2

Alessandra Satta;Alessandra Satta;J Schuhmacher;CM Whelan;Wilfried Vandervorst

124
Citations
Independent tuning of size and coverage of supported Pt nanoparticles using atomic layer deposition.

Jolien Dendooven;Ranjith K. Ramachandran;Eduardo Solano;Mert Kurttepeli

120
Citations
An Inner-/Outer-Sphere Stabilized Sn Active Site in β-Zeolite: Spectroscopic Evidence and Kinetic Consequences

Jan Dijkmans;Michiel Dusselier;Wout Janssens;Maarten Trekels

116
Citations
Site location of Co in beta-FeSi2

I Dezsi;C Fetzer;M Kiss;S Degroote

104
Citations
DIRECT EVIDENCE FOR TETRAHEDRAL INTERSTITIAL ER IN SI

U. Wahl;A. Vantomme;J. De Wachter;R. Moons

102
Citations
Epitaxial CoSi2 films on Si(100) by solid‐phase reaction

André Vantomme;Marc‐A. Nicolet;N. David Theodore

98
Citations
The Removal of Copper Oxides by Ethyl Alcohol Monitored In Situ by Spectroscopic Ellipsometry

Alessandra Satta;Denis Shamiryan;Mikhaı̈l R. Baklanov;Caroline M. Whelan

93
Citations
Thin film growth of semiconducting Mg2Si by codeposition

André Vantomme;John E. Mahan;Guido Langouche;James P. Becker

85
Citations
Optical energies of AlInN epilayers

K Wang;R W Martin;D Amabile;P R Edwards

84
Citations