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Materials Science

D-Index
60
Citations
16189
World Ranking
6951
National Ranking
86

Overview

Karen Maex is affiliated with the University of Amsterdam in the Netherlands. Their academic profile indicates involvement in research within a university setting, though detailed information on specific research contributions or outputs is not available.

There are no listed recent papers or publications attributed to Karen Maex, and data on frequent co-authors or venues of publication is also absent. This limits the ability to outline a comprehensive publication record or describe collaboration networks.

Details regarding the main fields of study, subfields, and primary research topics for Karen Maex are not provided. Consequently, the specific areas of expertise or thematic focuses within their academic career cannot be identified.

No book publications or awards have been noted for Karen Maex. This suggests either an early career stage, a focus outside major publishing, or that such data was not captured in the available records.

Best Publications

  • Low dielectric constant materials for microelectronics

    K. Maex;M. R. Baklanov;D. Shamiryan;F. lacopi

  • Read Stability and Write-Ability Analysis of SRAM Cells for Nanometer Technologies

    E. Grossar;M. Stucchi;K. Maex;W. Dehaene

  • Low-k dielectric materials

    Denis Shamiryan;Thomas Abell;Francesca Iacopi;Karen Maex

  • Tunnel field-effect transistor without gate-drain overlap

    Anne S. Verhulst;William G. Vandenberghe;Karen Maex;Guido Groeseneken

  • The reasons why metals catalyze the nucleation and growth of carbon nanotubes and other carbon nanomorphologies

    Santiago Esconjauregui;Caroline M. Whelan;Karen Maex

  • Silicides for integrated circuits: TiSi2 CoSi2

    Karen Maex

  • Influence of surface and grain-boundary scattering on the resistivity of copper in reduced dimensions

    W. Wu;S. H. Brongersma;M. Van Hove;K. Maex

  • Influence of the electron mean free path on the resistivity of thin metal films

    W. Zhang;S. H. Brongersma;O. Richard;B. Brijs

  • Dielectric Films for Advanced Microelectronics

    Mikhail Baklanov;Karen Maex

  • Self-annealing characterization of electroplated copper films

    S. Lagrange;S. H. Brongersma;M. Judelewicz;A. Saerens

  • Complementary Silicon-Based Heterostructure Tunnel-FETs With High Tunnel Rates

    A.S. Verhulst;W.G. Vandenberghe;K. Maex;S. De Gendt

  • Comparative study of SiOCH low-k films with varied porosity interacting with etching and cleaning plasma

    Denis Shamiryan;Mikhaïl Baklanov;Serge Vanhaelemeersch;Karen Maex

  • Boosting the on-current of a n-channel nanowire tunnel field-effect transistor by source material optimization

    Anne S. Verhulst;William G. Vandenberghe;Karen Maex;Guido Groeseneken

  • Materials aspects, electrical performance, and scalability of Ni silicide towards sub-0.13 μm technologies

    Anne Lauwers;An Steegen;Muriel de Potter;Richard Lindsay

  • Porous low dielectric constant materials for microelectronics

    Mikhail R Baklanov;Karen Maex

  • Short-ranged structural rearrangement and enhancement of mechanical properties of organosilicate glasses induced by ultraviolet radiation

    F Iacopi;Y Travaly;B Eyckens;C Waldfried

  • Ni- and Co-based silicides for advanced CMOS applications

    J. A. Kittl;A. Lauwers;O. Chamirian;M. Van Dal

  • Grain Growth, Stress, and Impurities in Electroplated Copper

    Sywert Brongersma;Emma Kerr;Iwan Vervoort;Annelies Saerens

  • High Q inductor add-on module in thick Cu/SiLK/sup TM/ single damascene

    S. Jenei;S. Decoutere;G. Winderickx;H. Struyf

  • Corrosion inhibition by self-assembled monolayers for enhanced wire bonding on Cu surfaces

    Caroline M. Whelan;Michael Kinsella;Laureen Carbonell;Hong Meng Ho

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