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D-Index & Metrics

Materials Science

D-Index
60
Citations
16189
World Ranking
6949
National Ranking
86

Karen Maex publication distribution in Materials Science in 2026

The chart shows the distribution of publications by all Research.com ranked scientists in the field of Materials Science in 2026. The highlighted bar marks where Karen Maex sits on this spectrum.

50–69 publications: 28 scientists 70–89 publications: 152 scientists 90–109 publications: 356 scientists 110–129 publications: 487 scientists 130–149 publications: 723 scientists 150–169 publications: 835 scientists 170–189 publications: 850 scientists 190–209 publications: 891 scientists 210–229 publications: 862 scientists 230–249 publications: 766 scientists 250–269 publications: 726 scientists 270–289 publications: 665 scientists 290–309 publications: 593 scientists 310–329 publications: 537 scientists 330–349 publications: 477 scientists 350–369 publications: 440 scientists 370–389 publications: 356 scientists 390–409 publications: 321 scientists 410–429 publications: 256 scientists 430–449 publications: 246 scientists 450–469 publications: 216 scientists 470–489 publications: 212 scientists 490–509 publications: 174 scientists 510–529 publications: 194 scientists 530–549 publications: 162 scientists 550–569 publications: 131 scientists 570–589 publications: 111 scientists 590–609 publications: 103 scientists 610–629 publications: 99 scientists 630–649 publications: 77 scientists 650–669 publications: 92 scientists 670–689 publications: 56 scientists 690–709 publications: 53 scientists 710–729 publications: 53 scientists 730–749 publications: 38 scientists 750–769 publications: 52 scientists 770–789 publications: 43 scientists 790–809 publications: 38 scientists 810–829 publications: 34 scientists 830–849 publications: 25 scientists 850–869 publications: 18 scientists 870–889 publications: 20 scientists 890–909 publications: 24 scientists 910–929 publications: 27 scientists 930–949 publications: 20 scientists 950–969 publications: 17 scientists 970–989 publications: 10 scientists 990–1,009 publications: 16 scientists 1,010–1,029 publications: 13 scientists 1,030–1,049 publications: 12 scientists 1,050–1,069 publications: 9 scientists 1,070–1,089 publications: 8 scientists 1,090–1,109 publications: 7 scientists 1,110–1,129 publications: 9 scientists 1,130–1,149 publications: 2 scientists 1,150–1,162 publications: 5 scientists 1,163+ publications: 100 scientists
50 publications 1,163+

This scientist: 631 publications — 93rd percentile

93% of scientists in this discipline score the same or lower.

The last bar groups every scientist with 1,163 publications or more.

Karen Maex D-index placement in Materials Science in 2026

The chart shows the D-index (discipline H-index) distribution of Materials Science scientists ranked by Research.com in 2026. The highlighted bar marks where Karen Maex sits on this spectrum.

40–41 D-Index: 211 scientists 42–43 D-Index: 450 scientists 44–45 D-Index: 612 scientists 46–47 D-Index: 612 scientists 48–49 D-Index: 598 scientists 50–51 D-Index: 657 scientists 52–53 D-Index: 667 scientists 54–55 D-Index: 621 scientists 56–57 D-Index: 597 scientists 58–59 D-Index: 610 scientists 60–61 D-Index: 587 scientists 62–63 D-Index: 606 scientists 64–65 D-Index: 533 scientists 66–67 D-Index: 490 scientists 68–69 D-Index: 469 scientists 70–71 D-Index: 378 scientists 72–73 D-Index: 421 scientists 74–75 D-Index: 359 scientists 76–77 D-Index: 323 scientists 78–79 D-Index: 299 scientists 80–81 D-Index: 230 scientists 82–83 D-Index: 210 scientists 84–85 D-Index: 195 scientists 86–87 D-Index: 203 scientists 88–89 D-Index: 175 scientists 90–91 D-Index: 175 scientists 92–93 D-Index: 142 scientists 94–95 D-Index: 121 scientists 96–97 D-Index: 117 scientists 98–99 D-Index: 107 scientists 100–101 D-Index: 88 scientists 102–103 D-Index: 85 scientists 104–105 D-Index: 68 scientists 106–107 D-Index: 62 scientists 108–109 D-Index: 57 scientists 110–111 D-Index: 45 scientists 112–113 D-Index: 49 scientists 114–115 D-Index: 50 scientists 116–117 D-Index: 34 scientists 118–119 D-Index: 38 scientists 120–121 D-Index: 37 scientists 122–123 D-Index: 29 scientists 124–125 D-Index: 28 scientists 126–127 D-Index: 24 scientists 128–129 D-Index: 33 scientists 130–131 D-Index: 28 scientists 132–133 D-Index: 21 scientists 134–135 D-Index: 20 scientists 136–137 D-Index: 23 scientists 138–139 D-Index: 17 scientists 140–141 D-Index: 12 scientists 142–143 D-Index: 17 scientists 144–145 D-Index: 21 scientists 146–147 D-Index: 13 scientists 148–149 D-Index: 11 scientists 150–151 D-Index: 14 scientists 152–153 D-Index: 13 scientists 154–155 D-Index: 9 scientists 156–157 D-Index: 10 scientists 158–159 D-Index: 7 scientists 160–161 D-Index: 4 scientists 162–163 D-Index: 4 scientists 164 D-Index: 3 scientists 165+ D-Index: 98 scientists
40 D-Index 165+

This scientist: 60 D-Index — 46th percentile

46% of scientists in this discipline score the same or lower.

The last bar groups every scientist with 165 D-Index or more.

Overview

Karen Maex is affiliated with the University of Amsterdam in the Netherlands. Their academic profile indicates involvement in research within a university setting, though detailed information on specific research contributions or outputs is not available.

There are no listed recent papers or publications attributed to Karen Maex, and data on frequent co-authors or venues of publication is also absent. This limits the ability to outline a comprehensive publication record or describe collaboration networks.

Details regarding the main fields of study, subfields, and primary research topics for Karen Maex are not provided. Consequently, the specific areas of expertise or thematic focuses within their academic career cannot be identified.

No book publications or awards have been noted for Karen Maex. This suggests either an early career stage, a focus outside major publishing, or that such data was not captured in the available records.

Best Publications

  • Low dielectric constant materials for microelectronics

    K. Maex;M. R. Baklanov;D. Shamiryan;F. lacopi

  • Read Stability and Write-Ability Analysis of SRAM Cells for Nanometer Technologies

    E. Grossar;M. Stucchi;K. Maex;W. Dehaene

  • Low-k dielectric materials

    Denis Shamiryan;Thomas Abell;Francesca Iacopi;Karen Maex

  • Tunnel field-effect transistor without gate-drain overlap

    Anne S. Verhulst;William G. Vandenberghe;Karen Maex;Guido Groeseneken

  • The reasons why metals catalyze the nucleation and growth of carbon nanotubes and other carbon nanomorphologies

    Santiago Esconjauregui;Caroline M. Whelan;Karen Maex

  • Silicides for integrated circuits: TiSi2 CoSi2

    Karen Maex

  • Influence of surface and grain-boundary scattering on the resistivity of copper in reduced dimensions

    W. Wu;S. H. Brongersma;M. Van Hove;K. Maex

  • Influence of the electron mean free path on the resistivity of thin metal films

    W. Zhang;S. H. Brongersma;O. Richard;B. Brijs

  • Dielectric Films for Advanced Microelectronics

    Mikhail Baklanov;Karen Maex

  • Self-annealing characterization of electroplated copper films

    S. Lagrange;S. H. Brongersma;M. Judelewicz;A. Saerens

  • Complementary Silicon-Based Heterostructure Tunnel-FETs With High Tunnel Rates

    A.S. Verhulst;W.G. Vandenberghe;K. Maex;S. De Gendt

  • Comparative study of SiOCH low-k films with varied porosity interacting with etching and cleaning plasma

    Denis Shamiryan;Mikhaïl Baklanov;Serge Vanhaelemeersch;Karen Maex

  • Boosting the on-current of a n-channel nanowire tunnel field-effect transistor by source material optimization

    Anne S. Verhulst;William G. Vandenberghe;Karen Maex;Guido Groeseneken

  • Materials aspects, electrical performance, and scalability of Ni silicide towards sub-0.13 μm technologies

    Anne Lauwers;An Steegen;Muriel de Potter;Richard Lindsay

  • Porous low dielectric constant materials for microelectronics

    Mikhail R Baklanov;Karen Maex

  • Short-ranged structural rearrangement and enhancement of mechanical properties of organosilicate glasses induced by ultraviolet radiation

    F Iacopi;Y Travaly;B Eyckens;C Waldfried

  • Ni- and Co-based silicides for advanced CMOS applications

    J. A. Kittl;A. Lauwers;O. Chamirian;M. Van Dal

  • Grain Growth, Stress, and Impurities in Electroplated Copper

    Sywert Brongersma;Emma Kerr;Iwan Vervoort;Annelies Saerens

  • High Q inductor add-on module in thick Cu/SiLK/sup TM/ single damascene

    S. Jenei;S. Decoutere;G. Winderickx;H. Struyf

  • Corrosion inhibition by self-assembled monolayers for enhanced wire bonding on Cu surfaces

    Caroline M. Whelan;Michael Kinsella;Laureen Carbonell;Hong Meng Ho

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