The scientist’s investigation covers issues in Analytical chemistry, Silicide, Silicon, Optoelectronics and Dielectric. Her Analytical chemistry research includes elements of Layer, Ellipsometry, Transmission electron microscopy and Annealing. Her research integrates issues of Doping, Dopant, Phase, Work function and Sheet resistance in her study of Silicide.
Her studies deal with areas such as Crystallography, Cobalt, Oxide and Epitaxy as well as Silicon. The concepts of her Optoelectronics study are interwoven with issues in Transistor, Electronic engineering and Contact resistance. Her Dielectric study incorporates themes from Porosity, Microporous material and Nanotechnology, Microelectronics.
Karen Maex mostly deals with Analytical chemistry, Optoelectronics, Silicide, Silicon and Electronic engineering. Her Analytical chemistry research is multidisciplinary, relying on both Layer, Thin film, Annealing and Dielectric. As a member of one scientific family, Karen Maex mostly works in the field of Dielectric, focusing on Porosity and, on occasion, Chemical engineering.
Her Optoelectronics research is multidisciplinary, incorporating elements of Transistor and Electrical engineering. Her research in Silicide intersects with topics in Sheet resistance, Rapid thermal processing, Thermal stability and Dopant. She studied Silicon and Epitaxy that intersect with Crystallography.
Her primary areas of study are Analytical chemistry, Dielectric, Chemical engineering, Electronic engineering and Optoelectronics. Her Analytical chemistry research incorporates themes from Layer, Silicide, Fourier transform infrared spectroscopy, Thin film and Germanium. She is interested in Copper interconnect, which is a field of Dielectric.
Her work deals with themes such as Porosity, Zeolite and Porosimetry, which intersect with Chemical engineering. She has researched Electronic engineering in several fields, including Capacitance, Electric power transmission, Scaling and Integrated circuit. Her research investigates the connection between Optoelectronics and topics such as Field-effect transistor that intersect with issues in Heterojunction.
Karen Maex mainly focuses on Analytical chemistry, Dielectric, Electronic engineering, Optoelectronics and Fermi level. Her Analytical chemistry research incorporates elements of Deep-level transient spectroscopy, Schottky diode, Acceptor, Ellipsometry and Germanium. Her Dielectric research is multidisciplinary, incorporating perspectives in Thin film, Nanotechnology, Microelectronics and Gate dielectric.
In her research on the topic of Gate dielectric, Porosity is strongly related with Engineering physics. Her study in Optoelectronics is interdisciplinary in nature, drawing from both Field-effect transistor, Transistor and UV curing. Her Fermi level study integrates concerns from other disciplines, such as Silicide, Condensed matter physics and Work function.
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Low dielectric constant materials for microelectronics
K. Maex;M. R. Baklanov;D. Shamiryan;F. lacopi.
Journal of Applied Physics (2003)
Read Stability and Write-Ability Analysis of SRAM Cells for Nanometer Technologies
E. Grossar;M. Stucchi;K. Maex;W. Dehaene.
IEEE Journal of Solid-state Circuits (2006)
Tunnel field-effect transistor without gate-drain overlap
Anne S. Verhulst;William G. Vandenberghe;Karen Maex;Guido Groeseneken.
Applied Physics Letters (2007)
Low-k dielectric materials
Denis Shamiryan;Thomas Abell;Francesca Iacopi;Karen Maex.
Materials Today (2004)
Silicides for integrated circuits: TiSi2 CoSi2
Materials Science & Engineering R-reports (1993)
Influence of surface and grain-boundary scattering on the resistivity of copper in reduced dimensions
W. Wu;S. H. Brongersma;M. Van Hove;K. Maex.
Applied Physics Letters (2004)
The reasons why metals catalyze the nucleation and growth of carbon nanotubes and other carbon nanomorphologies
Santiago Esconjauregui;Caroline M. Whelan;Karen Maex.
Influence of the electron mean free path on the resistivity of thin metal films
W. Zhang;S. H. Brongersma;O. Richard;B. Brijs.
Microelectronic Engineering (2004)
Dielectric Films for Advanced Microelectronics
Mikhail Baklanov;Karen Maex.
Complementary Silicon-Based Heterostructure Tunnel-FETs With High Tunnel Rates
A.S. Verhulst;W.G. Vandenberghe;K. Maex;S. De Gendt.
IEEE Electron Device Letters (2008)
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