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Materials Science

D-Index
55
Citations
13302
World Ranking
8503
National Ranking
2450

Overview

Mikhail R. Baklanov is affiliated with North China University of Technology in China. Their research activity primarily focuses on materials science and engineering, with significant contributions in several interconnected subfields.

The main fields of study for the scientist include:

  • Materials Science
  • Engineering

Within these areas, the subfields they most frequently contribute to are:

  • Electrical and Electronic Engineering
  • Electronic, Optical and Magnetic Materials
  • Materials Chemistry
  • Mechanics of Materials
  • Atomic and Molecular Physics, and Optics

The scientist's work extensively covers topics important to semiconductor and thin film technology as well as materials chemistry:

  • Copper Interconnects and Reliability
  • Semiconductor materials and devices
  • Silicone and Siloxane Chemistry
  • Metal and Thin Film Mechanics
  • Mesoporous Materials and Catalysis
  • Muon and positron interactions and applications
  • Silicon Nanostructures and Photoluminescence

Frequent co-authors who have collaborated with Mikhail R. Baklanov include:

  • К. А. Воротилов
  • Alexey S. Vishnevskiy
  • Д. С. Серегин
  • Md Rasadujjaman
  • Jing Zhang

The scientist has published regularly in multiple venues relevant to materials science and coating technologies. The venues with the highest number of their publications are:

  • Preprints.org
  • Coatings
  • Microporous and Mesoporous Materials
  • Materials
  • Journal of Vacuum Science & Technology A Vacuum Surfaces and Films

Representative papers authored or co-authored by Mikhail R. Baklanov include:

  • Evaluation of Mechanical Properties of Porous OSG Films by PFQNM AFM and Benchmarking with Traditional Instrumentation, 2020, Langmuir
  • Effects of Methyl Terminal and Carbon Bridging Groups Ratio on Critical Properties of Porous Organosilicate Glass Films, 2020, Materials
  • Effect of terminal methyl group concentration on critical properties and plasma resistance of organosilicate low-k dielectrics, 2020, Journal of Vacuum Science & Technology A Vacuum Surfaces and Films
  • Study on the Electrical, Structural, Chemical and Optical Properties of PVD Ta(N) Films Deposited with Different N2 Flow Rates, 2021, Coatings
  • A detailed ellipsometric porosimetry and positron annihilation spectroscopy study of porous organosilicate-glass films with various ratios of methyl terminal and ethylene bridging groups, 2020, Microporous and Mesoporous Materials

Best Publications

  • Low dielectric constant materials for microelectronics

    K. Maex;M. R. Baklanov;D. Shamiryan;F. lacopi

  • Determination of pore size distribution in thin films by ellipsometric porosimetry

    M. R. Baklanov;K. P. Mogilnikov;V. G. Polovinkin;F. N. Dultsev

  • Disorder-induced inhomogeneities of the superconducting state close to the superconductor-insulator transition.

    B. Sacépé;C. Chapelier;T. I. Baturina;V. M. Vinokur

  • Plasma processing of low-k dielectrics

    Mikhail R. Baklanov;Jean-Francois de Marneffe;Denis Shamiryan;Adam M. Urbanowicz

  • Superinsulator and quantum synchronization

    Valerii M. Vinokur;Tatyana I. Baturina;Tatyana I. Baturina;Mikhail V. Fistul;Aleksey Yu-U. Mironov

  • Metal-Organic Framework ZIF-8 Films As Low-κ Dielectrics in Microelectronics

    Salvador Eslava;Liping Zhang;Santiago Esconjauregui;Junwei Yang

  • Localized superconductivity in the quantum-critical region of the disorder-driven superconductor-insulator transition in TiN thin films.

    T. I. Baturina;A. Yu. Mironov;V. M. Vinokur;M. R. Baklanov

  • Dielectric Films for Advanced Microelectronics

    Mikhail Baklanov;Karen Maex

  • Fabrication of porogen residues free and mechanically robust low-k materials

    Adam Michal Urbanowicz;Patrick Verdonck;Denis Shamiryan;Kris Vanstreels

  • Non-destructive characterisation of porous low-k dielectric films

    M. R. Baklanov;K. P. Mogilnikov

  • Pseudogap in a thin film of a conventional superconductor

    Benjamin Sacépé;Claude Chapelier;Tatyana I. Baturina;Valerii M. Vinokur

  • Comparative study of SiOCH low-k films with varied porosity interacting with etching and cleaning plasma

    Denis Shamiryan;Mikhaïl Baklanov;Serge Vanhaelemeersch;Karen Maex

  • Porous low dielectric constant materials for microelectronics

    Mikhail R Baklanov;Karen Maex

  • Advanced Interconnects for ULSI Technology

    Mikhail Baklanov;Paul S. Ho;Ehrenfried Zschech

  • Effect of ultraviolet curing wavelength on low-k dielectric material properties and plasma damage resistance

    Premysl Marsik;Premysl Marsik;Adam M. Urbanowicz;Patrick Verdonck;David De Roest

  • Advanced Interconnects: Materials, Processing, and Reliability

    Mikhail R. Baklanov;Christoph Adelmann;Larry Zhao;Stefan De Gendt

  • Challenges in the implementation of low-k dielectrics in the back-end of line

    R. J. O. M. Hoofman;G. J. A. M. Verheijden;J. Michelon;F. Iacopi

  • Magnetic field-induced dissipation-free state in superconducting nanostructures

    R. Córdoba;T. I. Baturina;J. Sesé;A. Yu Mironov

  • Determination of Young's Modulus of Porous Low-k Films by Ellipsometric Porosimetry

    K. P. Mogilnikov;M. R. Baklanov

  • Quantum metallicity on the high-field side of the superconductor-insulator transition.

    T. Baturina;Christoph Strunk;M. R. Baklanov;A. Satta

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