World's Best Scientists 2026 revealed!

D-Index & Metrics

Electronics and Electrical Engineering

D-Index
70
Citations
18115
World Ranking
924
National Ranking
385

Materials Science

D-Index
74
Citations
20362
World Ranking
3620
National Ranking
997

Research.com Recognitions

  • 2002 - IEEE Robert N. Noyce Medal "For strategic leadership in global semiconductor research and development."

Overview

Yoshio Nishi is affiliated with Stanford University in the United States and has contributed to research primarily in the field of engineering, with specific focus on materials chemistry, electrical and electronic engineering, civil and structural engineering, and cellular and molecular neuroscience.

The scientist's work spans several topics including:

  • Advanced Thermoelectric Materials and Devices
  • Thermal Radiation and Cooling Technologies
  • Thermal properties of materials
  • Advanced Memory and Neural Computing
  • Ferroelectric and Negative Capacitance Devices
  • Neuroscience and Neural Engineering

Recent publications by Yoshio Nishi include:

  • Carbon nanotube thermoelectric devices by direct printing: Toward wearable energy converters, 2021, Applied Physics Letters
  • Bidirectional Analog Conductance Modulation for RRAM-Based Neural Networks, 2020, IEEE Transactions on Electron Devices
  • Masthead: (Adv. Electron. Mater. 2/2023), 2023, Advanced Electronic Materials
  • Masthead: (Adv. Electron. Mater. 6/2023), 2023, Advanced Electronic Materials
  • Masthead: (Adv. Electron. Mater. 5/2023), 2023, Advanced Electronic Materials

Yoshio Nishi frequently publishes in the following venues:

  • Advanced Electronic Materials
  • Applied Physics Letters
  • IEEE Transactions on Electron Devices

Collaborations have been notable with co-authors such as:

  • Peter Woias
  • Matthias Wuttig
  • Jong Chul Ahn
  • Marin Alexe
  • Hiroshi Amano

Yoshio Nishi was awarded the IEEE Robert N. Noyce Medal in 2002, recognized for strategic leadership in global semiconductor research and development.

Best Publications

  • Lithium ion secondary batteries; past 10 years and the future

    Unknown

  • Handbook of Semiconductor Manufacturing Technology

    Robert Doering;Yoshio Nishi

  • Preferential Growth of Semiconducting Single-Walled Carbon Nanotubes by a Plasma Enhanced CVD Method

    Yiming Li;David Mann;Marco Rolandi;Woong Kim

  • Olivine-type cathodes: Achievements and problems

    Atsuo Yamada;Mamoru Hosoya;Sai-Cheong Chung;Yoshihiro Kudo

  • Ultra-high-yield growth of vertical single-walled carbon nanotubes: Hidden roles of hydrogen and oxygen

    Guangyu Zhang;David Mann;Li Zhang;Ali Javey

  • Achieving direct band gap in germanium through integration of Sn alloying and external strain

    Suyog Gupta;Blanka Magyari-Köpe;Yoshio Nishi;Krishna C. Saraswat

  • The development of lithium ion secondary batteries.

    Unknown

  • Kinetic Study of Hydrogen Evolution Reaction over Strained MoS2 with Sulfur Vacancies Using Scanning Electrochemical Microscopy.

    Hong Li;Minshu Du;Michal J. Mleczko;Ai Leen Koh

  • HfSe 2 and ZrSe 2 : Two-dimensional semiconductors with native high-κ oxides.

    Michal J. Mleczko;Chaofan Zhang;Hye Ryoung Lee;Hsueh-Hui Kuo

  • Fermi level depinning in metal/Ge Schottky junction for metal source/drain Ge metal-oxide-semiconductor field-effect-transistor application

    Masaharu Kobayashi;Atsuhiro Kinoshita;Krishna Saraswat;H.-S. Philip Wong

  • DNA Functionalization of Carbon Nanotubes for Ultrathin Atomic Layer Deposition of High κ Dielectrics for Nanotube Transistors with 60 mV/Decade Switching

    Yuerui Lu;Sarunya Bangsaruntip;Xinran Wang;Li Zhang

  • Electronic correlation effects in reduced rutile TiO 2 within the LDA+U method

    Seong-Geon Park;Blanka Magyari-Köpe;Yoshio Nishi

  • Local Temperature Redistribution and Structural Transition During Joule‐Heating‐Driven Conductance Switching in VO2

    Suhas Kumar;Suhas Kumar;Matthew D. Pickett;John Paul Strachan;Gary Gibson

  • Bipolar resistive switching in polycrystalline TiO2 films

    K. Tsunoda;Y. Fukuzumi;J. R. Jameson;Z. Wang

  • Room temperature 1.6 microm electroluminescence from Ge light emitting diode on Si substrate.

    Szu Lin Cheng;Jesse Lu;Gary Shambat;Hyun Yong Yu

  • Physical mechanisms of electron mobility enhancement in uniaxial stressed MOSFETs and impact of uniaxial stress engineering in ballistic regime

    K. Uchida;T. Krishnamohan;K.C. Saraswat;Y. Nishi

  • Physical origins of current and temperature controlled negative differential resistances in NbO 2

    Suhas Kumar;Ziwen Wang;Noraica Davila;Niru Kumari

  • Study of Silicon-Silicon Dioxide Structure by Electron Spin Resonance II

    Yoshio Nishi;Kiyoshi Tanaka;Atsushi Ohwada

  • Monolithic 3D Integrated Circuits

    S. Wong;A. El-Gamal;P. Griffin;Y. Nishi

  • Monolithic 3D integration of logic and memory: Carbon nanotube FETs, resistive RAM, and silicon FETs

    Max M. Shulaker;Tony F. Wu;Asish Pal;Liang Zhao

  • Comprehensive Study on Injection Velocity Enhancement in Dopant-Segregated Schottky MOSFETs

    A. Kinoshita;T. Kinoshita;Y. Nishi;K. Uchida

  • Structural and Electrical Investigation of C60-Graphene Vertical Heterostructures.

    Kwanpyo Kim;Tae Hoon Lee;Tae Hoon Lee;Elton J G Santos;Pil Sung Jo

  • DNA Functionalization of Carbon Nanotubes for Ultra-Thin Atomic Layer Deposition of High k Dielectrics for Nanotube Transistors with 60mV/decade Switching

    Yuerui Lu;Sarunya Bangsaruntip;Xinran Wang;Li Zhang

Frequent Co-Authors

Krishna C. Saraswat
Krishna C. Saraswat Stanford University
Kenji Shiraishi
Kenji Shiraishi Nagoya University
Jelena Vuckovic
Jelena Vuckovic Stanford University
H.-S. Philip Wong
H.-S. Philip Wong Stanford University
Bruce M. Clemens
Bruce M. Clemens Stanford University
Zhenan Bao
Zhenan Bao Stanford University
Paul C. McIntyre
Paul C. McIntyre Stanford University
R. Stanley Williams
R. Stanley Williams Texas A&M University
John Paul Strachan
John Paul Strachan Hewlett-Packard (United States)
Hongjie Dai
Hongjie Dai University of Hong Kong

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