2002 - IEEE Robert N. Noyce Medal "For strategic leadership in global semiconductor research and development."
The scientist’s investigation covers issues in Optoelectronics, Nanotechnology, Condensed matter physics, MOSFET and Band gap. His Optoelectronics research incorporates elements of Field-effect transistor and Transistor. Yoshio Nishi has included themes like Chemical physics and Organic semiconductor in his Nanotechnology study.
His work deals with themes such as Metal and Density functional theory, which intersect with Condensed matter physics. His study in MOSFET is interdisciplinary in nature, drawing from both High-κ dielectric, Electron mobility, High-electron-mobility transistor, Leakage and Electronic engineering. As part of the same scientific family, Yoshio Nishi usually focuses on Band gap, concentrating on Electronic band structure and intersecting with Monolayer.
Yoshio Nishi spends much of his time researching Optoelectronics, Dielectric, Nanotechnology, Silicon and Condensed matter physics. His Optoelectronics study integrates concerns from other disciplines, such as Field-effect transistor, Transistor, MOSFET and Electronic engineering. As a part of the same scientific study, Yoshio Nishi usually deals with the Dielectric, concentrating on Analytical chemistry and frequently concerns with Annealing and Electron paramagnetic resonance.
His study looks at the relationship between Nanotechnology and topics such as Resistive random-access memory, which overlap with Oxide, Oxygen vacancy and Resistive touchscreen. His Silicon study incorporates themes from Substrate and Epitaxy. His research integrates issues of Electron and Density functional theory in his study of Condensed matter physics.
Yoshio Nishi mainly investigates Optoelectronics, Dielectric, Nanotechnology, Silicon and Condensed matter physics. His work carried out in the field of Optoelectronics brings together such families of science as Thin film, Electrical resistivity and conductivity and Leakage. Yoshio Nishi combines subjects such as X-ray photoelectron spectroscopy, Analytical chemistry, Bandgap narrowing and Irradiation, Fluence with his study of Dielectric.
As a member of one scientific family, Yoshio Nishi mostly works in the field of Nanotechnology, focusing on Resistive random-access memory and, on occasion, Thermal stability. His Silicon research is multidisciplinary, incorporating elements of Transistor, Quantum tunnelling, Nanoelectronics and Semiconductor. His work in Condensed matter physics tackles topics such as Density functional theory which are related to areas like Electron, Vacancy defect, Chemical physics and Coulomb.
His primary areas of study are Nanotechnology, Chemical physics, Dielectric, Resistive random-access memory and Condensed matter physics. His research in Nanotechnology intersects with topics in Curing and Thermal. His research investigates the link between Dielectric and topics such as Transistor that cross with problems in Optoelectronics, Capacitance and Organic semiconductor.
The study incorporates disciplines such as Perovskite, Coercivity and Hysteresis in addition to Optoelectronics. His studies deal with areas such as Oxide and Electronic engineering as well as Resistive random-access memory. Yoshio Nishi is interested in Band gap, which is a field of Condensed matter physics.
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Handbook of Semiconductor Manufacturing Technology
Robert Doering;Yoshio Nishi.
Preferential Growth of Semiconducting Single-Walled Carbon Nanotubes by a Plasma Enhanced CVD Method
Yiming Li;David Mann;Marco Rolandi;Woong Kim.
Nano Letters (2004)
Ultra-high-yield growth of vertical single-walled carbon nanotubes: Hidden roles of hydrogen and oxygen
Guangyu Zhang;David Mann;Li Zhang;Ali Javey.
Proceedings of the National Academy of Sciences of the United States of America (2005)
Achieving direct band gap in germanium through integration of Sn alloying and external strain
Suyog Gupta;Blanka Magyari-Köpe;Yoshio Nishi;Krishna C. Saraswat.
Journal of Applied Physics (2013)
DNA Functionalization of Carbon Nanotubes for Ultrathin Atomic Layer Deposition of High κ Dielectrics for Nanotube Transistors with 60 mV/Decade Switching
Yuerui Lu;Sarunya Bangsaruntip;Xinran Wang;Li Zhang.
Journal of the American Chemical Society (2006)
Fermi level depinning in metal/Ge Schottky junction for metal source/drain Ge metal-oxide-semiconductor field-effect-transistor application
Masaharu Kobayashi;Atsuhiro Kinoshita;Krishna Saraswat;H.-S. Philip Wong.
Journal of Applied Physics (2009)
Bipolar resistive switching in polycrystalline TiO2 films
K. Tsunoda;Y. Fukuzumi;J. R. Jameson;Z. Wang.
Applied Physics Letters (2007)
Room temperature 1.6 microm electroluminescence from Ge light emitting diode on Si substrate.
Szu Lin Cheng;Jesse Lu;Gary Shambat;Hyun Yong Yu.
Optics Express (2009)
Electronic correlation effects in reduced rutile TiO 2 within the LDA+U method
Seong-Geon Park;Blanka Magyari-Köpe;Yoshio Nishi.
Physical Review B (2010)
Kinetic Study of Hydrogen Evolution Reaction over Strained MoS2 with Sulfur Vacancies Using Scanning Electrochemical Microscopy.
Hong Li;Minshu Du;Michal J. Mleczko;Ai Leen Koh.
Journal of the American Chemical Society (2016)
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