World's Best Scientists 2026 revealed!

D-Index & Metrics

Electronics and Electrical Engineering

D-Index
70
Citations
18115
World Ranking
924
National Ranking
385

Materials Science

D-Index
74
Citations
20362
World Ranking
3620
National Ranking
997

Yoshio Nishi publication distribution in Electronics and Electrical Engineering in 2026

The chart shows the distribution of publications by all Research.com ranked scientists in the field of Electronics and Electrical Engineering in 2026. The highlighted bar marks where Yoshio Nishi sits on this spectrum.

34–53 publications: 24 scientists 54–73 publications: 52 scientists 74–93 publications: 114 scientists 94–113 publications: 203 scientists 114–133 publications: 269 scientists 134–153 publications: 355 scientists 154–173 publications: 403 scientists 174–193 publications: 446 scientists 194–213 publications: 430 scientists 214–233 publications: 431 scientists 234–253 publications: 399 scientists 254–273 publications: 366 scientists 274–293 publications: 335 scientists 294–313 publications: 300 scientists 314–333 publications: 276 scientists 334–353 publications: 250 scientists 354–373 publications: 214 scientists 374–393 publications: 187 scientists 394–413 publications: 152 scientists 414–433 publications: 169 scientists 434–453 publications: 147 scientists 454–473 publications: 111 scientists 474–493 publications: 117 scientists 494–513 publications: 103 scientists 514–533 publications: 99 scientists 534–553 publications: 92 scientists 554–573 publications: 75 scientists 574–593 publications: 58 scientists 594–613 publications: 69 scientists 614–633 publications: 50 scientists 634–653 publications: 62 scientists 654–673 publications: 54 scientists 674–693 publications: 44 scientists 694–713 publications: 37 scientists 714–733 publications: 28 scientists 734–753 publications: 26 scientists 754–773 publications: 26 scientists 774–793 publications: 19 scientists 794–813 publications: 23 scientists 814–833 publications: 20 scientists 834–853 publications: 16 scientists 854–873 publications: 20 scientists 874–893 publications: 11 scientists 894–913 publications: 11 scientists 914–933 publications: 16 scientists 934–953 publications: 13 scientists 954–973 publications: 10 scientists 974–993 publications: 11 scientists 994–1,013 publications: 9 scientists 1,014–1,033 publications: 9 scientists 1,034–1,053 publications: 10 scientists 1,054–1,064 publications: 6 scientists 1,065+ publications: 99 scientists
34 publications 1,065+

This scientist: 467 publications — 81st percentile

81% of scientists in this discipline score the same or lower.

The last bar groups every scientist with 1,065 publications or more.

Yoshio Nishi D-index placement in Electronics and Electrical Engineering in 2026

The chart shows the D-index (discipline H-index) distribution of Electronics and Electrical Engineering scientists ranked by Research.com in 2026. The highlighted bar marks where Yoshio Nishi sits on this spectrum.

30 D-Index: 178 scientists 31 D-Index: 257 scientists 32 D-Index: 263 scientists 33 D-Index: 263 scientists 34 D-Index: 244 scientists 35 D-Index: 236 scientists 36 D-Index: 211 scientists 37 D-Index: 220 scientists 38 D-Index: 214 scientists 39 D-Index: 214 scientists 40 D-Index: 205 scientists 41 D-Index: 187 scientists 42 D-Index: 194 scientists 43 D-Index: 201 scientists 44 D-Index: 155 scientists 45 D-Index: 189 scientists 46 D-Index: 148 scientists 47 D-Index: 160 scientists 48 D-Index: 134 scientists 49 D-Index: 130 scientists 50 D-Index: 141 scientists 51 D-Index: 156 scientists 52 D-Index: 108 scientists 53 D-Index: 130 scientists 54 D-Index: 112 scientists 55 D-Index: 97 scientists 56 D-Index: 111 scientists 57 D-Index: 102 scientists 58 D-Index: 108 scientists 59 D-Index: 120 scientists 60 D-Index: 103 scientists 61 D-Index: 93 scientists 62 D-Index: 92 scientists 63 D-Index: 74 scientists 64 D-Index: 77 scientists 65 D-Index: 73 scientists 66 D-Index: 64 scientists 67 D-Index: 69 scientists 68 D-Index: 60 scientists 69 D-Index: 39 scientists 70 D-Index: 57 scientists 71 D-Index: 59 scientists 72 D-Index: 46 scientists 73 D-Index: 49 scientists 74 D-Index: 38 scientists 75 D-Index: 35 scientists 76 D-Index: 32 scientists 77 D-Index: 35 scientists 78 D-Index: 31 scientists 79 D-Index: 22 scientists 80 D-Index: 34 scientists 81 D-Index: 31 scientists 82 D-Index: 34 scientists 83 D-Index: 23 scientists 84 D-Index: 18 scientists 85 D-Index: 30 scientists 86 D-Index: 19 scientists 87 D-Index: 19 scientists 88 D-Index: 20 scientists 89 D-Index: 8 scientists 90 D-Index: 17 scientists 91 D-Index: 7 scientists 92 D-Index: 14 scientists 93 D-Index: 9 scientists 94 D-Index: 15 scientists 95 D-Index: 10 scientists 96 D-Index: 12 scientists 97 D-Index: 10 scientists 98 D-Index: 10 scientists 99 D-Index: 12 scientists 100 D-Index: 16 scientists 101 D-Index: 5 scientists 102 D-Index: 7 scientists 103 D-Index: 7 scientists 104 D-Index: 8 scientists 105 D-Index: 9 scientists 106 D-Index: 13 scientists 107 D-Index: 4 scientists 108 D-Index: 5 scientists 109 D-Index: 10 scientists 110 D-Index: 8 scientists 111+ D-Index: 96 scientists
30 D-Index 111+

This scientist: 70 D-Index — 87th percentile

87% of scientists in this discipline score the same or lower.

The last bar groups every scientist with 111 D-Index or more.

Research.com Recognitions

  • 2002 - IEEE Robert N. Noyce Medal "For strategic leadership in global semiconductor research and development."

Overview

Yoshio Nishi is affiliated with Stanford University in the United States and has contributed to research primarily in the field of engineering, with specific focus on materials chemistry, electrical and electronic engineering, civil and structural engineering, and cellular and molecular neuroscience.

The scientist's work spans several topics including:

  • Advanced Thermoelectric Materials and Devices
  • Thermal Radiation and Cooling Technologies
  • Thermal properties of materials
  • Advanced Memory and Neural Computing
  • Ferroelectric and Negative Capacitance Devices
  • Neuroscience and Neural Engineering

Recent publications by Yoshio Nishi include:

  • Carbon nanotube thermoelectric devices by direct printing: Toward wearable energy converters, 2021, Applied Physics Letters
  • Bidirectional Analog Conductance Modulation for RRAM-Based Neural Networks, 2020, IEEE Transactions on Electron Devices
  • Masthead: (Adv. Electron. Mater. 2/2023), 2023, Advanced Electronic Materials
  • Masthead: (Adv. Electron. Mater. 6/2023), 2023, Advanced Electronic Materials
  • Masthead: (Adv. Electron. Mater. 5/2023), 2023, Advanced Electronic Materials

Yoshio Nishi frequently publishes in the following venues:

  • Advanced Electronic Materials
  • Applied Physics Letters
  • IEEE Transactions on Electron Devices

Collaborations have been notable with co-authors such as:

  • Peter Woias
  • Matthias Wuttig
  • Jong Chul Ahn
  • Marin Alexe
  • Hiroshi Amano

Yoshio Nishi was awarded the IEEE Robert N. Noyce Medal in 2002, recognized for strategic leadership in global semiconductor research and development.

Best Publications

  • Lithium ion secondary batteries; past 10 years and the future

    Unknown

  • Handbook of Semiconductor Manufacturing Technology

    Robert Doering;Yoshio Nishi

  • Preferential Growth of Semiconducting Single-Walled Carbon Nanotubes by a Plasma Enhanced CVD Method

    Yiming Li;David Mann;Marco Rolandi;Woong Kim

  • Olivine-type cathodes: Achievements and problems

    Atsuo Yamada;Mamoru Hosoya;Sai-Cheong Chung;Yoshihiro Kudo

  • Ultra-high-yield growth of vertical single-walled carbon nanotubes: Hidden roles of hydrogen and oxygen

    Guangyu Zhang;David Mann;Li Zhang;Ali Javey

  • Achieving direct band gap in germanium through integration of Sn alloying and external strain

    Suyog Gupta;Blanka Magyari-Köpe;Yoshio Nishi;Krishna C. Saraswat

  • The development of lithium ion secondary batteries.

    Unknown

  • Kinetic Study of Hydrogen Evolution Reaction over Strained MoS2 with Sulfur Vacancies Using Scanning Electrochemical Microscopy.

    Hong Li;Minshu Du;Michal J. Mleczko;Ai Leen Koh

  • HfSe 2 and ZrSe 2 : Two-dimensional semiconductors with native high-κ oxides.

    Michal J. Mleczko;Chaofan Zhang;Hye Ryoung Lee;Hsueh-Hui Kuo

  • Fermi level depinning in metal/Ge Schottky junction for metal source/drain Ge metal-oxide-semiconductor field-effect-transistor application

    Masaharu Kobayashi;Atsuhiro Kinoshita;Krishna Saraswat;H.-S. Philip Wong

  • DNA Functionalization of Carbon Nanotubes for Ultrathin Atomic Layer Deposition of High κ Dielectrics for Nanotube Transistors with 60 mV/Decade Switching

    Yuerui Lu;Sarunya Bangsaruntip;Xinran Wang;Li Zhang

  • Electronic correlation effects in reduced rutile TiO 2 within the LDA+U method

    Seong-Geon Park;Blanka Magyari-Köpe;Yoshio Nishi

  • Local Temperature Redistribution and Structural Transition During Joule‐Heating‐Driven Conductance Switching in VO2

    Suhas Kumar;Suhas Kumar;Matthew D. Pickett;John Paul Strachan;Gary Gibson

  • Bipolar resistive switching in polycrystalline TiO2 films

    K. Tsunoda;Y. Fukuzumi;J. R. Jameson;Z. Wang

  • Room temperature 1.6 microm electroluminescence from Ge light emitting diode on Si substrate.

    Szu Lin Cheng;Jesse Lu;Gary Shambat;Hyun Yong Yu

  • Physical mechanisms of electron mobility enhancement in uniaxial stressed MOSFETs and impact of uniaxial stress engineering in ballistic regime

    K. Uchida;T. Krishnamohan;K.C. Saraswat;Y. Nishi

  • Physical origins of current and temperature controlled negative differential resistances in NbO 2

    Suhas Kumar;Ziwen Wang;Noraica Davila;Niru Kumari

  • Study of Silicon-Silicon Dioxide Structure by Electron Spin Resonance II

    Yoshio Nishi;Kiyoshi Tanaka;Atsushi Ohwada

  • Monolithic 3D Integrated Circuits

    S. Wong;A. El-Gamal;P. Griffin;Y. Nishi

  • Monolithic 3D integration of logic and memory: Carbon nanotube FETs, resistive RAM, and silicon FETs

    Max M. Shulaker;Tony F. Wu;Asish Pal;Liang Zhao

  • Comprehensive Study on Injection Velocity Enhancement in Dopant-Segregated Schottky MOSFETs

    A. Kinoshita;T. Kinoshita;Y. Nishi;K. Uchida

  • Structural and Electrical Investigation of C60-Graphene Vertical Heterostructures.

    Kwanpyo Kim;Tae Hoon Lee;Tae Hoon Lee;Elton J G Santos;Pil Sung Jo

  • DNA Functionalization of Carbon Nanotubes for Ultra-Thin Atomic Layer Deposition of High k Dielectrics for Nanotube Transistors with 60mV/decade Switching

    Yuerui Lu;Sarunya Bangsaruntip;Xinran Wang;Li Zhang

Frequent Co-Authors

Krishna C. Saraswat
Krishna C. Saraswat Stanford University
Kenji Shiraishi
Kenji Shiraishi Nagoya University
Jelena Vuckovic
Jelena Vuckovic Stanford University
H.-S. Philip Wong
H.-S. Philip Wong Stanford University
Bruce M. Clemens
Bruce M. Clemens Stanford University
Zhenan Bao
Zhenan Bao Stanford University
Paul C. McIntyre
Paul C. McIntyre Stanford University
R. Stanley Williams
R. Stanley Williams Texas A&M University
John Paul Strachan
John Paul Strachan Hewlett-Packard (United States)
Hongjie Dai
Hongjie Dai University of Hong Kong

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