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Materials Science

D-Index
79
Citations
21385
World Ranking
2840
National Ranking
805

Overview

Paul C. McIntyre is affiliated with Stanford University in the United States. Their research primarily falls within the field of Engineering, with a strong focus on Electrical and Electronic Engineering. They have contributed extensively to research themes related to Semiconductor materials and devices, Ferroelectric and Negative Capacitance Devices, and Photonic and Optical Devices.

McIntyre's publication record includes significant work on advanced memory technologies, nanowire synthesis, and semiconductor interfaces. Their recent papers cover diverse topics such as solar fuels, core/shell nanowire light emission, ferroelectric materials, and novel electronic memory devices. Notable publications include:

  • The 2022 solar fuels roadmap, 2022, Journal of Physics D Applied Physics
  • Growth mode control for direct-gap core/shell Ge/GeSn nanowire light emission, 2020, Materials Today
  • High-Performance BEOL-Compatible Atomic-Layer-Deposited In2O3 Fe-FETs Enabled by Channel Length Scaling down to 7 nm: Achieving Performance Enhancement with Large Memory Window of 2.2 V, Long Retention > 10 years and High Endurance > 108 Cycles, 2021, 2021 IEEE International Electron Devices Meeting (IEDM)
  • Dimensional Scaling of Ferroelectric Properties of Hafnia-Zirconia Thin Films: Electrode Interface Effects, 2024, ACS Nano
  • Field-Induced Ferroelectric Phase Evolution During Polarization "Wake-Up" in Hf0.5Zr0.5O2 Thin Film Capacitors, 2023, Advanced Electronic Materials

The scientist has collaborated frequently with other researchers including Frances A. Houle, Griselda Bonilla, L. J. Brillson, Kristen Brosnan, and Coray M. Colina.

Their research has been published repeatedly in several venues, demonstrating ongoing contributions to key journals and conferences. Frequent publication venues include:

  • Journal of materials research/Pratt's guide to venture capital sources
  • arXiv (Cornell University)
  • MRS Communications
  • Advanced Electronic Materials
  • ACS Applied Materials & Interfaces

Their main fields of study reflect a deep engagement with engineering and materials science, specifically addressing challenges in semiconductor device engineering, materials chemistry, renewable energy technologies, biomedical engineering, and atomic and molecular physics.

Subfields of particular interest within their work are:

  • Electrical and Electronic Engineering
  • Materials Chemistry
  • Renewable Energy, Sustainability and the Environment
  • Biomedical Engineering
  • Atomic and Molecular Physics, and Optics

Their research coverage extends to specialized topics including:

  • Semiconductor materials and devices
  • Ferroelectric and Negative Capacitance Devices
  • Photonic and Optical Devices
  • Advanced Memory and Neural Computing
  • Nanowire Synthesis and Applications
  • MXene and MAX Phase Materials
  • Semiconductor materials and interfaces

Best Publications

  • High-κ dielectrics for advanced carbon- nanotube transistors and logic gates

    Ali Javey;Hyoungsub Kim;Markus Brink;Qian Wang

  • Atomic layer-deposited tunnel oxide stabilizes silicon photoanodes for water oxidation

    Yi Wei Chen;Jonathan D. Prange;Simon Dühnen;Yohan Park

  • The Properties of Ferroelectric Films at Small Dimensions

    T. M. Shaw;S. Trolier-McKinstry;P. C. McIntyre

  • Germanium nanowire field-effect transistors with SiO2 and high-κ HfO2 gate dielectrics

    Dunwei Wang;Qian Wang;Ali Javey;Ryan Tu

  • Germanium MOS capacitors incorporating ultrathin high-/spl kappa/ gate dielectric

    Chi On Chui;S. Ramanathan;B.B. Triplett;P.C. McIntyre

  • Effect of growth conditions on the properties and morphology of chemically derived epitaxial thin films of Ba2YCu3O7−x on (001) LaAlO3

    Paul C. McIntyre;Michael J. Cima;John A. Smith;Robert B. Hallock

  • Effects of crystallization on the electrical properties of ultrathin HfO2 dielectrics grown by atomic layer deposition

    Hyoungsub Kim;Paul C. McIntyre;Krishna C. Saraswat

  • A sub-400/spl deg/C germanium MOSFET technology with high-/spl kappa/ dielectric and metal gate

    Chi On Chui;Hyoungsub Kim;D. Chi;B.B. Triplett

  • Coexistence of Grain-Boundaries-Assisted Bipolar and Threshold Resistive Switching in Multilayer Hexagonal Boron Nitride

    Chengbin Pan;Yanfeng Ji;Na Xiao;Fei Hui

  • Germanium nanowire epitaxy: shape and orientation control.

    Hemant Adhikari;Ann F Marshall;Christopher E D Chidsey;Paul C McIntyre

  • Electrical and materials properties of ZrO2 gate dielectrics grown by atomic layer chemical vapor deposition

    Charles M. Perkins;Baylor B. Triplett;Paul C. McIntyre;Krishna C. Saraswat

  • Design principles for maximizing photovoltage in metal-oxide-protected water-splitting photoanodes

    Andrew G. Scheuermann;John P. Lawrence;Kyle W. Kemp;T. Ito;T. Ito

  • Metalorganic deposition of high‐Jc Ba2YCu3O7−x thin films from trifluoroacetate precursors onto (100) SrTiO3

    Paul C. McIntyre;Michael J. Cima;Man Fai Ng

  • Border traps in Al2O3/In0.53Ga0.47As (100) gate stacks and their passivation by hydrogen anneals

    Eun Ji Kim;Lingquan Wang;Peter M. Asbeck;Krishna C. Saraswat

  • Effects of catalyst material and atomic layer deposited TiO2 oxide thickness on the water oxidation performance of metal–insulator–silicon anodes

    Andrew G. Scheuermann;Jonathan D. Prange;Marika Gunji;Christopher E. D. Chidsey

  • Engineering chemically abrupt high-k metal oxide∕silicon interfaces using an oxygen-gettering metal overlayer

    Hyoungsub Kim;Paul C. McIntyre;Chi On Chui;Krishna C. Saraswat

  • Ge-Interface Engineering With Ozone Oxidation for Low Interface-State Density

    D. Kuzum;T. Krishnamohan;A.J. Pethe;A.K. Okyay

  • Thermal Properties of Ultrathin Hafnium Oxide Gate Dielectric Films

    M.A. Panzer;M. Shandalov;J.A. Rowlette;Y. Oshima

  • Origin and passivation of fixed charge in atomic layer deposited aluminum oxide gate insulators on chemically treated InGaAs substrates

    Byungha Shin;Justin R. Weber;Rathnait D. Long;Paul K. Hurley

  • Investigation of Self-Assembled Monolayer Resists for Hafnium Dioxide Atomic Layer Deposition

    Rong Chen;Hyoungsub Kim;Paul C. Mcintyre;Stacey F. Bent

  • Atomic layer deposition of ZrO2 on W for metal-insulator-metal capacitor application

    Sang-Yun Lee;Hyoungsub Kim;Paul C. McIntyre;Krishna C. Saraswat

Frequent Co-Authors

Krishna C. Saraswat
Krishna C. Saraswat Stanford University
Hyoungsub Kim
Hyoungsub Kim Sungkyunkwan University
Christopher E. D. Chidsey
Christopher E. D. Chidsey Stanford University
Chi On Chui
Chi On Chui University of California, Los Angeles
Andrew C. Kummel
Andrew C. Kummel University of California, San Diego
Yuan Taur
Yuan Taur University of California, San Diego
Yoshio Nishi
Yoshio Nishi Stanford University
Mark J. W. Rodwell
Mark J. W. Rodwell University of California, Santa Barbara
Susanne Stemmer
Susanne Stemmer University of California, Santa Barbara

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