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D-Index & Metrics

Materials Science

D-Index
79
Citations
21385
World Ranking
2838
National Ranking
803

Paul C. McIntyre publication distribution in Materials Science in 2026

The chart shows the distribution of publications by all Research.com ranked scientists in the field of Materials Science in 2026. The highlighted bar marks where Paul C. McIntyre sits on this spectrum.

50–69 publications: 28 scientists 70–89 publications: 152 scientists 90–109 publications: 356 scientists 110–129 publications: 487 scientists 130–149 publications: 723 scientists 150–169 publications: 835 scientists 170–189 publications: 850 scientists 190–209 publications: 891 scientists 210–229 publications: 862 scientists 230–249 publications: 766 scientists 250–269 publications: 726 scientists 270–289 publications: 665 scientists 290–309 publications: 593 scientists 310–329 publications: 537 scientists 330–349 publications: 477 scientists 350–369 publications: 440 scientists 370–389 publications: 356 scientists 390–409 publications: 321 scientists 410–429 publications: 256 scientists 430–449 publications: 246 scientists 450–469 publications: 216 scientists 470–489 publications: 212 scientists 490–509 publications: 174 scientists 510–529 publications: 194 scientists 530–549 publications: 162 scientists 550–569 publications: 131 scientists 570–589 publications: 111 scientists 590–609 publications: 103 scientists 610–629 publications: 99 scientists 630–649 publications: 77 scientists 650–669 publications: 92 scientists 670–689 publications: 56 scientists 690–709 publications: 53 scientists 710–729 publications: 53 scientists 730–749 publications: 38 scientists 750–769 publications: 52 scientists 770–789 publications: 43 scientists 790–809 publications: 38 scientists 810–829 publications: 34 scientists 830–849 publications: 25 scientists 850–869 publications: 18 scientists 870–889 publications: 20 scientists 890–909 publications: 24 scientists 910–929 publications: 27 scientists 930–949 publications: 20 scientists 950–969 publications: 17 scientists 970–989 publications: 10 scientists 990–1,009 publications: 16 scientists 1,010–1,029 publications: 13 scientists 1,030–1,049 publications: 12 scientists 1,050–1,069 publications: 9 scientists 1,070–1,089 publications: 8 scientists 1,090–1,109 publications: 7 scientists 1,110–1,129 publications: 9 scientists 1,130–1,149 publications: 2 scientists 1,150–1,162 publications: 5 scientists 1,163+ publications: 100 scientists
50 publications 1,163+

This scientist: 400 publications — 77th percentile

77% of scientists in this discipline score the same or lower.

The last bar groups every scientist with 1,163 publications or more.

Paul C. McIntyre D-index placement in Materials Science in 2026

The chart shows the D-index (discipline H-index) distribution of Materials Science scientists ranked by Research.com in 2026. The highlighted bar marks where Paul C. McIntyre sits on this spectrum.

40–41 D-Index: 211 scientists 42–43 D-Index: 450 scientists 44–45 D-Index: 612 scientists 46–47 D-Index: 612 scientists 48–49 D-Index: 598 scientists 50–51 D-Index: 657 scientists 52–53 D-Index: 667 scientists 54–55 D-Index: 621 scientists 56–57 D-Index: 597 scientists 58–59 D-Index: 610 scientists 60–61 D-Index: 587 scientists 62–63 D-Index: 606 scientists 64–65 D-Index: 533 scientists 66–67 D-Index: 490 scientists 68–69 D-Index: 469 scientists 70–71 D-Index: 378 scientists 72–73 D-Index: 421 scientists 74–75 D-Index: 359 scientists 76–77 D-Index: 323 scientists 78–79 D-Index: 299 scientists 80–81 D-Index: 230 scientists 82–83 D-Index: 210 scientists 84–85 D-Index: 195 scientists 86–87 D-Index: 203 scientists 88–89 D-Index: 175 scientists 90–91 D-Index: 175 scientists 92–93 D-Index: 142 scientists 94–95 D-Index: 121 scientists 96–97 D-Index: 117 scientists 98–99 D-Index: 107 scientists 100–101 D-Index: 88 scientists 102–103 D-Index: 85 scientists 104–105 D-Index: 68 scientists 106–107 D-Index: 62 scientists 108–109 D-Index: 57 scientists 110–111 D-Index: 45 scientists 112–113 D-Index: 49 scientists 114–115 D-Index: 50 scientists 116–117 D-Index: 34 scientists 118–119 D-Index: 38 scientists 120–121 D-Index: 37 scientists 122–123 D-Index: 29 scientists 124–125 D-Index: 28 scientists 126–127 D-Index: 24 scientists 128–129 D-Index: 33 scientists 130–131 D-Index: 28 scientists 132–133 D-Index: 21 scientists 134–135 D-Index: 20 scientists 136–137 D-Index: 23 scientists 138–139 D-Index: 17 scientists 140–141 D-Index: 12 scientists 142–143 D-Index: 17 scientists 144–145 D-Index: 21 scientists 146–147 D-Index: 13 scientists 148–149 D-Index: 11 scientists 150–151 D-Index: 14 scientists 152–153 D-Index: 13 scientists 154–155 D-Index: 9 scientists 156–157 D-Index: 10 scientists 158–159 D-Index: 7 scientists 160–161 D-Index: 4 scientists 162–163 D-Index: 4 scientists 164 D-Index: 3 scientists 165+ D-Index: 98 scientists
40 D-Index 165+

This scientist: 79 D-Index — 79th percentile

79% of scientists in this discipline score the same or lower.

The last bar groups every scientist with 165 D-Index or more.

Overview

Paul C. McIntyre is affiliated with Stanford University in the United States. Their research primarily falls within the field of Engineering, with a strong focus on Electrical and Electronic Engineering. They have contributed extensively to research themes related to Semiconductor materials and devices, Ferroelectric and Negative Capacitance Devices, and Photonic and Optical Devices.

McIntyre's publication record includes significant work on advanced memory technologies, nanowire synthesis, and semiconductor interfaces. Their recent papers cover diverse topics such as solar fuels, core/shell nanowire light emission, ferroelectric materials, and novel electronic memory devices. Notable publications include:

  • The 2022 solar fuels roadmap, 2022, Journal of Physics D Applied Physics
  • Growth mode control for direct-gap core/shell Ge/GeSn nanowire light emission, 2020, Materials Today
  • High-Performance BEOL-Compatible Atomic-Layer-Deposited In2O3 Fe-FETs Enabled by Channel Length Scaling down to 7 nm: Achieving Performance Enhancement with Large Memory Window of 2.2 V, Long Retention > 10 years and High Endurance > 108 Cycles, 2021, 2021 IEEE International Electron Devices Meeting (IEDM)
  • Dimensional Scaling of Ferroelectric Properties of Hafnia-Zirconia Thin Films: Electrode Interface Effects, 2024, ACS Nano
  • Field-Induced Ferroelectric Phase Evolution During Polarization "Wake-Up" in Hf0.5Zr0.5O2 Thin Film Capacitors, 2023, Advanced Electronic Materials

The scientist has collaborated frequently with other researchers including Frances A. Houle, Griselda Bonilla, L. J. Brillson, Kristen Brosnan, and Coray M. Colina.

Their research has been published repeatedly in several venues, demonstrating ongoing contributions to key journals and conferences. Frequent publication venues include:

  • Journal of materials research/Pratt's guide to venture capital sources
  • arXiv (Cornell University)
  • MRS Communications
  • Advanced Electronic Materials
  • ACS Applied Materials & Interfaces

Their main fields of study reflect a deep engagement with engineering and materials science, specifically addressing challenges in semiconductor device engineering, materials chemistry, renewable energy technologies, biomedical engineering, and atomic and molecular physics.

Subfields of particular interest within their work are:

  • Electrical and Electronic Engineering
  • Materials Chemistry
  • Renewable Energy, Sustainability and the Environment
  • Biomedical Engineering
  • Atomic and Molecular Physics, and Optics

Their research coverage extends to specialized topics including:

  • Semiconductor materials and devices
  • Ferroelectric and Negative Capacitance Devices
  • Photonic and Optical Devices
  • Advanced Memory and Neural Computing
  • Nanowire Synthesis and Applications
  • MXene and MAX Phase Materials
  • Semiconductor materials and interfaces

Best Publications

  • High-κ dielectrics for advanced carbon- nanotube transistors and logic gates

    Ali Javey;Hyoungsub Kim;Markus Brink;Qian Wang

  • Atomic layer-deposited tunnel oxide stabilizes silicon photoanodes for water oxidation

    Yi Wei Chen;Jonathan D. Prange;Simon Dühnen;Yohan Park

  • The Properties of Ferroelectric Films at Small Dimensions

    T. M. Shaw;S. Trolier-McKinstry;P. C. McIntyre

  • Germanium nanowire field-effect transistors with SiO2 and high-κ HfO2 gate dielectrics

    Dunwei Wang;Qian Wang;Ali Javey;Ryan Tu

  • Germanium MOS capacitors incorporating ultrathin high-/spl kappa/ gate dielectric

    Chi On Chui;S. Ramanathan;B.B. Triplett;P.C. McIntyre

  • Effect of growth conditions on the properties and morphology of chemically derived epitaxial thin films of Ba2YCu3O7−x on (001) LaAlO3

    Paul C. McIntyre;Michael J. Cima;John A. Smith;Robert B. Hallock

  • Effects of crystallization on the electrical properties of ultrathin HfO2 dielectrics grown by atomic layer deposition

    Hyoungsub Kim;Paul C. McIntyre;Krishna C. Saraswat

  • A sub-400/spl deg/C germanium MOSFET technology with high-/spl kappa/ dielectric and metal gate

    Chi On Chui;Hyoungsub Kim;D. Chi;B.B. Triplett

  • Coexistence of Grain-Boundaries-Assisted Bipolar and Threshold Resistive Switching in Multilayer Hexagonal Boron Nitride

    Chengbin Pan;Yanfeng Ji;Na Xiao;Fei Hui

  • Germanium nanowire epitaxy: shape and orientation control.

    Hemant Adhikari;Ann F Marshall;Christopher E D Chidsey;Paul C McIntyre

  • Electrical and materials properties of ZrO2 gate dielectrics grown by atomic layer chemical vapor deposition

    Charles M. Perkins;Baylor B. Triplett;Paul C. McIntyre;Krishna C. Saraswat

  • Design principles for maximizing photovoltage in metal-oxide-protected water-splitting photoanodes

    Andrew G. Scheuermann;John P. Lawrence;Kyle W. Kemp;T. Ito;T. Ito

  • Metalorganic deposition of high‐Jc Ba2YCu3O7−x thin films from trifluoroacetate precursors onto (100) SrTiO3

    Paul C. McIntyre;Michael J. Cima;Man Fai Ng

  • Border traps in Al2O3/In0.53Ga0.47As (100) gate stacks and their passivation by hydrogen anneals

    Eun Ji Kim;Lingquan Wang;Peter M. Asbeck;Krishna C. Saraswat

  • Effects of catalyst material and atomic layer deposited TiO2 oxide thickness on the water oxidation performance of metal–insulator–silicon anodes

    Andrew G. Scheuermann;Jonathan D. Prange;Marika Gunji;Christopher E. D. Chidsey

  • Engineering chemically abrupt high-k metal oxide∕silicon interfaces using an oxygen-gettering metal overlayer

    Hyoungsub Kim;Paul C. McIntyre;Chi On Chui;Krishna C. Saraswat

  • Ge-Interface Engineering With Ozone Oxidation for Low Interface-State Density

    D. Kuzum;T. Krishnamohan;A.J. Pethe;A.K. Okyay

  • Thermal Properties of Ultrathin Hafnium Oxide Gate Dielectric Films

    M.A. Panzer;M. Shandalov;J.A. Rowlette;Y. Oshima

  • Origin and passivation of fixed charge in atomic layer deposited aluminum oxide gate insulators on chemically treated InGaAs substrates

    Byungha Shin;Justin R. Weber;Rathnait D. Long;Paul K. Hurley

  • Investigation of Self-Assembled Monolayer Resists for Hafnium Dioxide Atomic Layer Deposition

    Rong Chen;Hyoungsub Kim;Paul C. Mcintyre;Stacey F. Bent

  • Atomic layer deposition of ZrO2 on W for metal-insulator-metal capacitor application

    Sang-Yun Lee;Hyoungsub Kim;Paul C. McIntyre;Krishna C. Saraswat

Frequent Co-Authors

Krishna C. Saraswat
Krishna C. Saraswat Stanford University
Hyoungsub Kim
Hyoungsub Kim Sungkyunkwan University
Christopher E. D. Chidsey
Christopher E. D. Chidsey Stanford University
Chi On Chui
Chi On Chui University of California, Los Angeles
Andrew C. Kummel
Andrew C. Kummel University of California, San Diego
Yuan Taur
Yuan Taur University of California, San Diego
Yoshio Nishi
Yoshio Nishi Stanford University
Mark J. W. Rodwell
Mark J. W. Rodwell University of California, Santa Barbara
Susanne Stemmer
Susanne Stemmer University of California, Santa Barbara

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