D-Index & Metrics Best Publications

D-Index & Metrics D-index (Discipline H-index) only includes papers and citation values for an examined discipline in contrast to General H-index which accounts for publications across all disciplines.

Discipline name D-index D-index (Discipline H-index) only includes papers and citation values for an examined discipline in contrast to General H-index which accounts for publications across all disciplines. Citations Publications World Ranking National Ranking
Materials Science D-index 60 Citations 10,393 411 World Ranking 4434 National Ranking 45

Overview

What is he best known for?

The fields of study he is best known for:

  • Semiconductor
  • Silicon
  • Optoelectronics

His primary scientific interests are in Optoelectronics, Germanium, MOSFET, Analytical chemistry and Band gap. Marc Meuris combines subjects such as Electronic engineering, Passivation and Atomic layer deposition with his study of Optoelectronics. He interconnects Nanotechnology, Doping, Annealing, PMOS logic and Ion implantation in the investigation of issues within Germanium.

His MOSFET research incorporates themes from Electron mobility, Silicon and Leakage. His Analytical chemistry research incorporates elements of Capacitance and Substrate. The various areas that Marc Meuris examines in his Band gap study include Oxide, Substrate, Metal and Density functional theory.

His most cited work include:

  • On the Correct Extraction of Interface Trap Density of MOS Devices With High-Mobility Semiconductor Substrates (322 citations)
  • Effective electrical passivation of Ge(100) for high-k gate dielectric layers using germanium oxide (238 citations)
  • Germanium MOSFET Devices: Advances in Materials Understanding, Process Development, and Electrical Performance (197 citations)

What are the main themes of his work throughout his whole career to date?

Marc Meuris mainly focuses on Optoelectronics, Germanium, Passivation, Analytical chemistry and Silicon. The study incorporates disciplines such as Layer, Electronic engineering and MOSFET in addition to Optoelectronics. His Layer research includes themes of Thin film and Solar cell.

The concepts of his Germanium study are interwoven with issues in Epitaxy, Annealing, Leakage, Ion implantation and Dopant. His work deals with themes such as Open-circuit voltage, Oxide and Doping, which intersect with Analytical chemistry. His work investigates the relationship between Silicon and topics such as Nanotechnology that intersect with problems in Semiconductor.

He most often published in these fields:

  • Optoelectronics (47.63%)
  • Germanium (23.49%)
  • Passivation (20.04%)

What were the highlights of his more recent work (between 2015-2021)?

  • Solar cell (17.89%)
  • Kesterite (12.93%)
  • Optoelectronics (47.63%)

In recent papers he was focusing on the following fields of study:

Marc Meuris focuses on Solar cell, Kesterite, Optoelectronics, Thin film and Copper indium gallium selenide solar cells. His Solar cell study incorporates themes from Photovoltaics, Photovoltaic system, Band gap and Scanning electron microscope. Marc Meuris has included themes like Open-circuit voltage and Inorganic chemistry in his Kesterite study.

The study incorporates disciplines such as Layer, Tandem and Voltage in addition to Optoelectronics. Marc Meuris combines subjects such as Ammonium sulfide and Photoluminescence with his study of Thin film. The various areas that he examines in his Copper indium gallium selenide solar cells study include Accelerated lifetime testing and Passivation.

Between 2015 and 2021, his most popular works were:

  • Dielectric-Based Rear Surface Passivation Approaches for Cu(In,Ga)Se2 Solar Cells—A Review (24 citations)
  • 7.6% CZGSe Solar Cells Thanks to Optimized CdS Chemical Bath Deposition (23 citations)
  • Optoelectronic properties of thin film Cu2ZnGeSe4 solar cells (22 citations)

In his most recent research, the most cited papers focused on:

  • Semiconductor
  • Silicon
  • Electrical engineering

Marc Meuris mainly investigates Open-circuit voltage, Kesterite, Solar cell, Thin film and Analytical chemistry. Marc Meuris usually deals with Open-circuit voltage and limits it to topics linked to Energy conversion efficiency and Doping, Carrier lifetime and Rapid thermal processing. The subject of his Kesterite research is within the realm of Optoelectronics.

As a part of the same scientific family, Marc Meuris mostly works in the field of Optoelectronics, focusing on Voltage and, on occasion, Germanium and Quantum dot solar cell. His biological study spans a wide range of topics, including Inorganic chemistry, Caesium, Metal and Band gap. As part of the same scientific family, he usually focuses on Thin film, concentrating on Photoluminescence and intersecting with Energy-dispersive X-ray spectroscopy.

This overview was generated by a machine learning system which analysed the scientist’s body of work. If you have any feedback, you can contact us here.

Best Publications

On the Correct Extraction of Interface Trap Density of MOS Devices With High-Mobility Semiconductor Substrates

K. Martens;Chi On Chui;G. Brammertz;B. De Jaeger.
IEEE Transactions on Electron Devices (2008)

438 Citations

Germanium MOSFET Devices: Advances in Materials Understanding, Process Development, and Electrical Performance

D. P. Brunco;B. De Jaeger;G. Eneman;J. Mitard.
Journal of The Electrochemical Society (2008)

314 Citations

Effective electrical passivation of Ge(100) for high-k gate dielectric layers using germanium oxide

Annelies Delabie;Florence Bellenger;Michel Houssa;Thierry Conard.
Applied Physics Letters (2007)

285 Citations

Characterization of defects in 9.7% efficient Cu2ZnSnSe4-CdS-ZnO solar cells

G. Brammertz;Marie Buffiere;S. Oueslati;S. Oueslati;S. Oueslati;H. Elanzeery;H. Elanzeery;H. Elanzeery.
Applied Physics Letters (2013)

245 Citations

Method and apparatus for localized liquid treatment of the surface of a substrate

Paul Mertens;Marc Meuris;Marc Heyns.
(2000)

178 Citations

Diffusion, activation and recrystallization of boron implanted in preamorphized and crystalline germanium

A. Satta;E. Simoen;T. Clarysse;T. Janssens.
Applied Physics Letters (2005)

177 Citations

The IMEC clean : A new concept for particle and metal removal on Si surfaces

Marc Meuris;Paul Mertens;Ann Opdebeeck;Harald Schmidt.
Solid State Technology (1995)

167 Citations

Method and apparatus for removing a liquid from a surface

Paul Mertens;Marc Meuris;Marc Heyns.
(1998)

162 Citations

Passivation of Ge ( 100 ) ∕ GeO2 ∕ high-κ Gate Stacks Using Thermal Oxide Treatments

F. Bellenger;M. Houssa;A. Delabie;V. Afanasiev.
Journal of The Electrochemical Society (2008)

154 Citations

Ion-implantation issues in the formation of shallow junctions in germanium

Eddy Simoen;Alessandra Satta;Antonio D'Amore;Tom Janssens.
Materials Science in Semiconductor Processing (2006)

150 Citations

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