Marc Meuris

Marc Meuris publication distribution in Materials Science in 2026

The chart shows the distribution of publications by all Research.com ranked scientists in the field of Materials Science in 2026. The highlighted bar marks where Marc Meuris sits on this spectrum.

Marc Meuris D-index placement in Materials Science in 2026

The chart shows the D-index (discipline H-index) distribution of Materials Science scientists ranked by Research.com in 2026. The highlighted bar marks where Marc Meuris sits on this spectrum.

Overview

Best Publications

• On the Correct Extraction of Interface Trap Density of MOS Devices With High-Mobility Semiconductor Substrates

  K. Martens;Chi On Chui;G. Brammertz;B. De Jaeger

  459
  Citations

• Germanium MOSFET Devices: Advances in Materials Understanding, Process Development, and Electrical Performance

  D. P. Brunco;B. De Jaeger;G. Eneman;J. Mitard

  348
  Citations

• Effective electrical passivation of Ge(100) for high-k gate dielectric layers using germanium oxide

  Annelies Delabie;Florence Bellenger;Michel Houssa;Thierry Conard

  293
  Citations

• Characterization of defects in 9.7% efficient Cu2ZnSnSe4-CdS-ZnO solar cells

  G. Brammertz;Marie Buffiere;S. Oueslati;S. Oueslati;S. Oueslati;H. Elanzeery;H. Elanzeery;H. Elanzeery

  260
  Citations

• Diffusion, activation and recrystallization of boron implanted in preamorphized and crystalline germanium

  A. Satta;E. Simoen;T. Clarysse;T. Janssens

  184
  Citations

• The IMEC clean : A new concept for particle and metal removal on Si surfaces

  Marc Meuris;Paul Mertens;Ann Opdebeeck;Harald Schmidt

  170
  Citations

• Passivation of Ge ( 100 ) ∕ GeO2 ∕ high-κ Gate Stacks Using Thermal Oxide Treatments

  F. Bellenger;M. Houssa;A. Delabie;V. Afanasiev

  162
  Citations

• Method and apparatus for removing a liquid from a surface

  Paul Mertens;Marc Meuris;Marc Heyns

  162
  Citations

• Ion-implantation issues in the formation of shallow junctions in germanium

  Eddy Simoen;Alessandra Satta;Antonio D'Amore;Tom Janssens

  155
  Citations

• On the interface state density at In0.53Ga0.47As/oxide interfaces

  G. Brammertz;H.-C. Lin;M. Caymax;M. Meuris

  150
  Citations

• High performance Ge pMOS devices using a Si-compatible process flow

  P. Zimmerman;G. Nicholas;B. De Jaeger;B. Kaczer

  146
  Citations

• P implantation doping of Ge: Diffusion, activation, and recrystallization

  A. Satta;T. Janssens;T. Clarysse;E. Simoen

  146
  Citations

• Characteristic trapping lifetime and capacitance-voltage measurements of GaAs metal-oxide-semiconductor structures

  Guy Brammertz;Koen Martens;Sonja Sioncke;Annelies Delabie

  145
  Citations

• Record I ON /I OFF performance for 65nm Ge pMOSFET and novel Si passivation scheme for improved EOT scalability

  J. Mitard;B. De Jaeger;F.E. Leys;G. Hellings

  141
  Citations

• Optimisation of a thin epitaxial Si layer as Ge passivation layer to demonstrate deep sub-micron n- and p-FETs on Ge-On-Insulator substrates

  B. De Jaeger;R. Bonzom;F. Leys;O. Richard

  140
  Citations

• Method and apparatus for removing a liquid from a surface of a rotating substrate

  Paul Mertens;Mark Meuris;Marc Heyns

  140
  Citations

• Atomic layer deposition of hafnium oxide on germanium substrates

  Annelies Delabie;Riikka L. Puurunen;Bert Brijs;Matty Caymax

  135
  Citations

• A study of the influence of typical wet chemical treatments on the germanium wafer surface

  Bart Onsia;Thierry Conard;Stefan De Gendt;Marc M. Heyns

  135
  Citations

• A Combined Interface and Border Trap Model for High-Mobility Substrate Metal–Oxide–Semiconductor Devices Applied to $\hbox{In}_{0.53} \hbox{Ga}_{0.47}\hbox{As}$ and InP Capacitors

  G. Brammertz;A. Alian;D. H-C Lin;M. Meuris

  134
  Citations

• Electrical study of sulfur passivated In0.53Ga0.47As MOS capacitor and transistor with ALD Al2O3 as gate insulator

  Han-Chung Lin;Wei-E. Wang;Guy Brammertz;Marc Meuris

  133
  Citations