Marc Meuris

Overview

Best Publications

• On the Correct Extraction of Interface Trap Density of MOS Devices With High-Mobility Semiconductor Substrates

  K. Martens;Chi On Chui;G. Brammertz;B. De Jaeger

  459
  Citations

• Germanium MOSFET Devices: Advances in Materials Understanding, Process Development, and Electrical Performance

  D. P. Brunco;B. De Jaeger;G. Eneman;J. Mitard

  348
  Citations

• Effective electrical passivation of Ge(100) for high-k gate dielectric layers using germanium oxide

  Annelies Delabie;Florence Bellenger;Michel Houssa;Thierry Conard

  293
  Citations

• Characterization of defects in 9.7% efficient Cu2ZnSnSe4-CdS-ZnO solar cells

  G. Brammertz;Marie Buffiere;S. Oueslati;S. Oueslati;S. Oueslati;H. Elanzeery;H. Elanzeery;H. Elanzeery

  260
  Citations

• Diffusion, activation and recrystallization of boron implanted in preamorphized and crystalline germanium

  A. Satta;E. Simoen;T. Clarysse;T. Janssens

  184
  Citations

• The IMEC clean : A new concept for particle and metal removal on Si surfaces

  Marc Meuris;Paul Mertens;Ann Opdebeeck;Harald Schmidt

  170
  Citations

• Passivation of Ge ( 100 ) ∕ GeO2 ∕ high-κ Gate Stacks Using Thermal Oxide Treatments

  F. Bellenger;M. Houssa;A. Delabie;V. Afanasiev

  162
  Citations

• Method and apparatus for removing a liquid from a surface

  Paul Mertens;Marc Meuris;Marc Heyns

  162
  Citations

• Ion-implantation issues in the formation of shallow junctions in germanium

  Eddy Simoen;Alessandra Satta;Antonio D'Amore;Tom Janssens

  155
  Citations

• On the interface state density at In0.53Ga0.47As/oxide interfaces

  G. Brammertz;H.-C. Lin;M. Caymax;M. Meuris

  150
  Citations

• High performance Ge pMOS devices using a Si-compatible process flow

  P. Zimmerman;G. Nicholas;B. De Jaeger;B. Kaczer

  146
  Citations

• P implantation doping of Ge: Diffusion, activation, and recrystallization

  A. Satta;T. Janssens;T. Clarysse;E. Simoen

  146
  Citations

• Characteristic trapping lifetime and capacitance-voltage measurements of GaAs metal-oxide-semiconductor structures

  Guy Brammertz;Koen Martens;Sonja Sioncke;Annelies Delabie

  145
  Citations

• Record I ON /I OFF performance for 65nm Ge pMOSFET and novel Si passivation scheme for improved EOT scalability

  J. Mitard;B. De Jaeger;F.E. Leys;G. Hellings

  141
  Citations

• Optimisation of a thin epitaxial Si layer as Ge passivation layer to demonstrate deep sub-micron n- and p-FETs on Ge-On-Insulator substrates

  B. De Jaeger;R. Bonzom;F. Leys;O. Richard

  140
  Citations

• Method and apparatus for removing a liquid from a surface of a rotating substrate

  Paul Mertens;Mark Meuris;Marc Heyns

  140
  Citations

• Atomic layer deposition of hafnium oxide on germanium substrates

  Annelies Delabie;Riikka L. Puurunen;Bert Brijs;Matty Caymax

  135
  Citations

• A study of the influence of typical wet chemical treatments on the germanium wafer surface

  Bart Onsia;Thierry Conard;Stefan De Gendt;Marc M. Heyns

  135
  Citations

• A Combined Interface and Border Trap Model for High-Mobility Substrate Metal–Oxide–Semiconductor Devices Applied to $\hbox{In}_{0.53} \hbox{Ga}_{0.47}\hbox{As}$ and InP Capacitors

  G. Brammertz;A. Alian;D. H-C Lin;M. Meuris

  134
  Citations

• Electrical study of sulfur passivated In0.53Ga0.47As MOS capacitor and transistor with ALD Al2O3 as gate insulator

  Han-Chung Lin;Wei-E. Wang;Guy Brammertz;Marc Meuris

  133
  Citations