Thierry Conard

Overview

Best Publications

• High-k dielectrics for future generation memory devices (Invited Paper)

  J. A. Kittl;K. Opsomer;M. Popovici;N. Menou

  326
  Citations

• Nucleation and growth of atomic layer deposited HfO2 gate dielectric layers on chemical oxide (Si–O–H) and thermal oxide (SiO2 or Si–O–N) underlayers

  Martin Green;M.Y Ho;B Busch;G.D Wilk

  325
  Citations

• Effective electrical passivation of Ge(100) for high-k gate dielectric layers using germanium oxide

  Annelies Delabie;Florence Bellenger;Michel Houssa;Thierry Conard

  293
  Citations

• Characterization of ALCVD-Al2O3 and ZrO2 layer using X-ray photoelectron spectroscopy

  H. Nohira;W. Tsai;W. Besling;E. Young

  288
  Citations

• Ultra low-EOT (5 Å) gate-first and gate-last high performance CMOS achieved by gate-electrode optimization

  L.-A. Ragnarsson;Z. Li;J. Tseng;T. Schram

  226
  Citations

• Organic and perovskite solar cells for space applications

  Ilaria Cardinaletti;Ilaria Cardinaletti;Tim Vangerven;Tim Vangerven;Steven Nagels;Steven Nagels;Rob Cornelissen

  219
  Citations

• Island growth in the atomic layer deposition of zirconium oxide and aluminum oxide on hydrogen-terminated silicon: Growth mode modeling and transmission electron microscopy

  Riikka L. Puurunen;Wilfried Vandervorst;Wim F. A. Besling;Olivier Richard

  202
  Citations

• Passivation of Ge ( 100 ) ∕ GeO2 ∕ high-κ Gate Stacks Using Thermal Oxide Treatments

  F. Bellenger;M. Houssa;A. Delabie;V. Afanasiev

  162
  Citations

• Atomic layer deposition of hafnium oxide on germanium substrates

  Annelies Delabie;Riikka L. Puurunen;Bert Brijs;Matty Caymax

  135
  Citations

• A study of the influence of typical wet chemical treatments on the germanium wafer surface

  Bart Onsia;Thierry Conard;Stefan De Gendt;Marc M. Heyns

  135
  Citations

• Characterisation of ALCVD Al2O3–ZrO2 nanolaminates, link between electrical and structural properties

  W.F.A. Besling;E. Young;T. Conard;C. Zhao

  121
  Citations

• Characterization of Cu surface cleaning by hydrogen plasma

  Mikhaïl Baklanov;Denis Shamiryan;Zsolt Tokei;Gerald Beyer

  116
  Citations

• Deposition of HfO2 on germanium and the impact of surface pretreatments

  S. Van Elshocht;B. Brijs;M. Caymax;T. Conard

  114
  Citations

• Dielectric properties of dysprosium- and scandium-doped hafnium dioxide thin films

  C. Adelmann;V. Sriramkumar;S. Van Elshocht;P. Lehnen

  111
  Citations

• The conversion mechanism of amorphous silicon to stoichiometric WS2

  Markus H. Heyne;Markus H. Heyne;Jean-François de Marneffe;Thomas Nuytten;Johan Meersschaut

  105
  Citations

• Interfacial properties of ZrO2 on silicon

  Y S. Lin;R Puthenkovilakam;J Chang;Charles E. Bouldin

  100
  Citations

• Effect of hafnium germanate formation on the interface of HfO2/germanium metal oxide semiconductor devices

  S. Van Elshocht;M. Caymax;T. Conard;S. De Gendt

  96
  Citations

• Plasma-Enhanced Atomic Layer Deposition of Two-Dimensional WS2 from WF6, H2 Plasma, and H2S

  Benjamin Groven;Markus Heyne;Ankit Nalin Mehta;Hugo Bender

  95
  Citations

• Complex admittance analysis for La2Hf2O7/SiO2 high-κ dielectric stacks

  G. Apostolopoulos;G. Vellianitis;A. Dimoulas;J. C. Hooker

  95
  Citations

• Low temperature deposition of 2D WS2 layers from WF6 and H2S precursors: impact of reducing agents

  A. Delabie;M. Caymax;B. Groven;M. Heyne

  94
  Citations

• HfO2 as gate dielectric on Ge: interfaces and deposition techniques

  M. Caymax;S. Van Elshocht;M. Houssa;A. Delabie

  92
  Citations

• Interface engineering for Ge metal-oxide-semiconductor devices

  A. Dimoulas;D.P. Brunco;S. Ferrari;Jin Won Seo

  88
  Citations