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Geoffrey Pourtois

Geoffrey Pourtois

D-Index & Metrics

Materials Science

D-Index
59
Citations
13651
World Ranking
7327
National Ranking
84

Overview

Geoffrey Pourtois is affiliated with Imec in Belgium and primarily conducts research in the fields of Engineering and Materials Science. Their research focuses heavily on Electrical and Electronic Engineering, with significant contributions to Materials Chemistry and Atomic and Molecular Physics, and Optics. Their work also spans Electronic, Optical and Magnetic Materials, as well as Biomedical Engineering.

The core topics Geoffrey Pourtois has worked on include:

  • Semiconductor materials and devices
  • Semiconductor materials and interfaces
  • 2D Materials and Applications
  • Copper Interconnects and Reliability
  • Graphene research and applications
  • Phase-change materials and chalcogenides
  • Advanced Memory and Neural Computing

Geoffrey Pourtois has contributed to numerous peer-reviewed publications. Notable recent papers include:

  • "Graphene and Beyond: Recent Advances in Two-Dimensional Materials Synthesis, Properties, and Devices" (2022), published in ACS Nanoscience Au
  • "Ovonic Threshold-Switching GexSey Chalcogenide Materials: Stoichiometry, Trap Nature, and Material Relaxation from First Principles" (2020), published in physica status solidi (RRL) - Rapid Research Letters
  • "Chalcogenide Ovonic Threshold Switching Selector" (2024), published in Nano-Micro Letters
  • "Properties of ultrathin molybdenum films for interconnect applications" (2022), published in Materialia
  • "Dilute Rhenium Doping and its Impact on Defects in MoS2" (2023), published in ACS Nano

The most frequent publication venues where Geoffrey Pourtois has disseminated research include:

  • arXiv (Cornell University)
  • Journal of Applied Physics
  • ECS Meeting Abstracts
  • The Journal of Physical Chemistry C
  • Applied Physics Letters

Collaboration is a significant aspect of their work, with frequent co-authors including Michiel J. van Setten, Kiroubanand Sankaran, Zsolt Tökei, Gouri Sankar Kar, and Christoph Adelmann. These collaborations demonstrate sustained teamwork across multiple publications.

Best Publications

  • Strain-induced semiconductor to metal transition in the two-dimensional honeycomb structure of MoS2

    Emilio Scalise;Michel Houssa;Geoffrey Pourtois;Geoffrey Pourtois;Valery Afanas’ev

  • 10×10nm 2 Hf/HfO x crossbar resistive RAM with excellent performance, reliability and low-energy operation

    B. Govoreanu;G.S. Kar;Y-Y. Chen;V. Paraschiv

  • Electronic properties of hydrogenated silicene and germanene

    Michel Houssa;Emilio Scalise;Kiroubanand Sankaran;Geoffrey Pourtois

  • Interchain vs. intrachain energy transfer in acceptor-capped conjugated polymers

    D. Beljonne;G. Pourtois;C. Silva;E. Hennebicq

  • Spin-Orbit Coupling and Intersystem Crossing in Conjugated Polymers: A Configuration Interaction Description

    D. Beljonne;Z. Shuai;G. Pourtois;J. L. Bredas

  • Bandgap opening in oxygen plasma-treated graphene.

    Amirhasan Nourbakhsh;Mirco Cantoro;Tom Vosch;Geoffrey Pourtois

  • Germanium MOSFET Devices: Advances in Materials Understanding, Process Development, and Electrical Performance

    D. P. Brunco;B. De Jaeger;G. Eneman;J. Mitard

  • Electrical properties of high-κ gate dielectrics: Challenges, current issues, and possible solutions

    M. Houssa;L. Pantisano;L.-Å. Ragnarsson;R. Degraeve

  • Exciton migration in rigid-rod conjugated polymers: An improved Forster model

    Emmanuelle Hennebicq;Geoffrey Pourtois;Gregory D. Scholes;Laura M. Herz

  • High-k dielectrics for future generation memory devices (Invited Paper)

    J. A. Kittl;K. Opsomer;M. Popovici;N. Menou

  • Mechanical and Electronic Properties of Thin-Film Transistors on Plastic, and Their Integration in Flexible Electronic Applications.

    Paul Heremans;Ashutosh K. Tripathi;Albert de Jamblinne de Meux;Edsger C. P. Smits

  • Can silicon behave like graphene? A first-principles study

    Michel Houssa;Geoffrey Pourtois;Valeri Afanas'ev;Andre Stesmans

  • Identification of the ferroelectric switching process and dopant-dependent switching properties in orthorhombic HfO2: A first principles insight

    Sergiu Clima;Dirk Wouters;Christoph Adelmann;Tony Schenk

  • Vibrational properties of silicene and germanene

    Emilio Scalise;Michel Houssa;Geoffrey Pourtois;Geoffrey Pourtois;B. van den Broek

  • Graphene and Beyond: Recent Advances in Two-Dimensional Materials Synthesis, Properties, and Devices

    Unknown

  • Alternating oligo(p-phenylene vinylene)--perylene bisimide copolymers: synthesis, photophysics, and photovoltaic properties of a new class of donor--acceptor materials.

    Neuteboom Ee;Meskers Sc;van Hal Pa;van Duren Jk

  • Thickness dependence of the resistivity of platinum-group metal thin films

    Shibesh Dutta;Kiroubanand Sankaran;Kristof Moors;Geoffrey Pourtois

  • Photoinduced Electron-Transfer Processes along Molecular Wires Based on Phenylenevinylene Oligomers: A Quantum-Chemical Insight

    G. Pourtois;G. Pourtois;David Beljonne;David Beljonne;Jérôme Cornil;Jérôme Cornil;M.A.. Ratner

  • Electronic properties of two-dimensional hexagonal germanium

    Michel Houssa;Geoffrey Pourtois;Valery Afanas'ev;Andre Stesmans

  • First-principles study of strained 2D MoS2

    E. Scalise;M. Houssa;G. Pourtois;G. Pourtois;V.V. Afanas′ev

  • Thickness dependence of the resistivity of Platinum group metal thin films

    Shibesh Dutta;Kiroubanand Sankaran;Kristof Moors;Geoffrey Pourtois

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