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Ludovic Goux

Ludovic Goux

D-Index & Metrics

Electronics and Electrical Engineering

D-Index
47
Citations
9381
World Ranking
3209
National Ranking
68

Overview

Ludovic Goux is affiliated with Imec in Belgium and conducts research primarily within the Social Sciences. Their work spans interdisciplinary fields, with a focus on Gender Studies, Pediatrics, Perinatology and Child Health, and Sociology and Political Science. The research topics addressed explore Demographic Trends and Gender Preferences, Gender, Labor, and Family Dynamics, Global Maternal and Child Health, as well as Education, Sociology, and Vocational Training.

Recent publications by Ludovic Goux include:

  • Revisiting fertility regulation and family ties in Tunisia, 2023, published in BMC Pregnancy and Childbirth
  • Revisiting Fertility Regulation in Tunisia, 2022, published in Research Square (Research Square)
  • Écrire au lycée professionnel, 2022, published in Cahiers pédagogiques
  • Écrire ensemble pour analyser ses pratiques et se développer professionnellement, 2025, published in Partages

Frequent co-authors appearing alongside Ludovic Goux include:

  • Olfa Frini
  • Julian Manneville
  • Aurore Promonet
  • Éric Féry
  • Claude Bataille

Publications have appeared in the following venues with notable recurrence:

  • BMC Pregnancy and Childbirth
  • Research Square (Research Square)
  • Cahiers pédagogiques
  • Partages

Ludovic Goux's scholarly work tackles demographic aspects related to gender, family, and health, as reflected in the thematic concentration of their research. This includes analyses of fertility regulation in Tunisia, maternal and child health, as well as practices related to education and vocational training.

Best Publications

  • Recommended Methods to Study Resistive Switching Devices

    Mario Lanza;H.-S. Philip Wong;Eric Pop;Daniele Ielmini

  • 10×10nm 2 Hf/HfO x crossbar resistive RAM with excellent performance, reliability and low-energy operation

    B. Govoreanu;G.S. Kar;Y-Y. Chen;V. Paraschiv

  • Three-dimensional observation of the conductive filament in nanoscaled resistive memory devices.

    Umberto Celano;Ludovic Goux;Attilio Belmonte;Karl Opsomer

  • Endurance/Retention Trade-off on $\hbox{HfO}_{2}/\hbox{Metal}$ Cap 1T1R Bipolar RRAM

    Yang Yin Chen;L. Goux;S. Clima;B. Govoreanu

  • Evidences of oxygen-mediated resistive-switching mechanism in TiN\HfO2\Pt cells

    Ludovic Goux;Piotr Czarnecki;Yang Yin Chen;Luigi Pantisano

  • Intrinsic switching variability in HfO 2 RRAM

    A. Fantini;L. Goux;R. Degraeve;D. J. Wouters

  • Coexistence of the bipolar and unipolar resistive-switching modes in NiO cells made by thermal oxidation of Ni layers

    L. Goux;J. G. Lisoni;M. Jurczak;D. J. Wouters

  • Standards for the Characterization of Endurance in Resistive Switching Devices.

    Mario Lanza;Rainer Waser;Rainer Waser;Daniele Ielmini;J. Joshua Yang

  • Balancing SET/RESET Pulse for $>\hbox{10}^{10}$ Endurance in $\hbox{HfO}_{2}\hbox{/Hf}$ 1T1R Bipolar RRAM

    Yang Yin Chen;B. Govoreanu;L. Goux;R. Degraeve

  • Imaging the Three-Dimensional Conductive Channel in Filamentary-Based Oxide Resistive Switching Memory

    Umberto Celano;Ludovic Goux;Robin Degraeve;Andrea Fantini

  • Capacitor-less, Long-Retention (>400s) DRAM Cell Paving the Way towards Low-Power and High-Density Monolithic 3D DRAM

    A. Belmonte;H. Oh;N. Rassoul;G.L. Donadio

  • Control of filament size and reduction of reset current below 10 μA in NiO resistance switching memories

    F. Nardi;D. Ielmini;C. Cagli;S. Spiga

  • On the Gradual Unipolar and Bipolar Resistive Switching of TiN\ HfO2\Pt Memory Systems

    Ludovic Goux;Yang Yin Chen;Luigi Pantisano;Xin Peng Wang

  • Causes and consequences of the stochastic aspect of filamentary RRAM

    R. Degraeve;A. Fantini;N. Raghavan;L. Goux

  • Improvement of data retention in HfO 2 /Hf 1T1R RRAM cell under low operating current

    Yang Yin Chen;Masanori Komura;Robin Degraeve;Bogdan Govoreanu

  • A Thermally Stable and High-Performance 90-nm ${ m Al}_{2}{ m O}_{3}ackslash{ m Cu}$ -Based 1T1R CBRAM Cell

    Attilio Belmonte;Woosik Kim;Boon Teik Chan;Nancy Heylen

  • Dynamic ‘hour glass’ model for SET and RESET in HfO 2 RRAM

    R. Degraeve;A. Fantini;S. Clima;B. Govoreanu

  • Influence of the Cu-Te composition and microstructure on the resistive switching of Cu-Te/Al2O3/Si cells

    L Goux;Karl Opsomer;R Degraeve;R Muller

  • Optimized Ni Oxidation in 80-nm Contact Holes for Integration of Forming-Free and Low-Power Ni/NiO/Ni Memory Cells

    L. Goux;J.G. Lisoni;Xin Peng Wang;M. Jurczak

  • Understanding of the endurance failure in scaled HfO 2 -based 1T1R RRAM through vacancy mobility degradation

    Yang Yin Chen;Robin Degraeve;Sergiu Clima;Bogdan Govoreanu

  • Improvement of data retention in HfO2 / Hf 1T1R RRAM cell under low operating current

    Yang Yin Chen;Masanori Komura;Robin Degraeve;Bogdan Govoreanu

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