World's Best Scientists 2026 revealed!
Gouri Sankar Kar

Gouri Sankar Kar

D-Index & Metrics

Electronics and Electrical Engineering

D-Index
38
Citations
6772
World Ranking
4866
National Ranking
105

Gouri Sankar Kar publication distribution in Electronics and Electrical Engineering in 2026

The chart shows the distribution of publications by all Research.com ranked scientists in the field of Electronics and Electrical Engineering in 2026. The highlighted bar marks where Gouri Sankar Kar sits on this spectrum.

34–53 publications: 24 scientists 54–73 publications: 52 scientists 74–93 publications: 114 scientists 94–113 publications: 203 scientists 114–133 publications: 269 scientists 134–153 publications: 355 scientists 154–173 publications: 403 scientists 174–193 publications: 445 scientists 194–213 publications: 430 scientists 214–233 publications: 431 scientists 234–253 publications: 399 scientists 254–273 publications: 366 scientists 274–293 publications: 335 scientists 294–313 publications: 300 scientists 314–333 publications: 276 scientists 334–353 publications: 250 scientists 354–373 publications: 214 scientists 374–393 publications: 187 scientists 394–413 publications: 152 scientists 414–433 publications: 169 scientists 434–453 publications: 147 scientists 454–473 publications: 111 scientists 474–493 publications: 117 scientists 494–513 publications: 103 scientists 514–533 publications: 99 scientists 534–553 publications: 92 scientists 554–573 publications: 75 scientists 574–593 publications: 58 scientists 594–613 publications: 69 scientists 614–633 publications: 50 scientists 634–653 publications: 62 scientists 654–673 publications: 54 scientists 674–693 publications: 44 scientists 694–713 publications: 37 scientists 714–733 publications: 28 scientists 734–753 publications: 26 scientists 754–773 publications: 26 scientists 774–793 publications: 19 scientists 794–813 publications: 23 scientists 814–833 publications: 20 scientists 834–853 publications: 16 scientists 854–873 publications: 20 scientists 874–893 publications: 11 scientists 894–913 publications: 11 scientists 914–933 publications: 16 scientists 934–953 publications: 13 scientists 954–973 publications: 10 scientists 974–993 publications: 11 scientists 994–1,013 publications: 9 scientists 1,014–1,033 publications: 9 scientists 1,034–1,053 publications: 10 scientists 1,054–1,064 publications: 6 scientists 1,065+ publications: 99 scientists
34 publications 1,065+

This scientist: 296 publications — 56th percentile

56% of scientists in this discipline score the same or lower.

The last bar groups every scientist with 1,065 publications or more.

Gouri Sankar Kar D-index placement in Electronics and Electrical Engineering in 2026

The chart shows the D-index (discipline H-index) distribution of Electronics and Electrical Engineering scientists ranked by Research.com in 2026. The highlighted bar marks where Gouri Sankar Kar sits on this spectrum.

30 D-Index: 178 scientists 31 D-Index: 257 scientists 32 D-Index: 263 scientists 33 D-Index: 262 scientists 34 D-Index: 244 scientists 35 D-Index: 236 scientists 36 D-Index: 211 scientists 37 D-Index: 220 scientists 38 D-Index: 214 scientists 39 D-Index: 214 scientists 40 D-Index: 205 scientists 41 D-Index: 187 scientists 42 D-Index: 194 scientists 43 D-Index: 201 scientists 44 D-Index: 155 scientists 45 D-Index: 189 scientists 46 D-Index: 148 scientists 47 D-Index: 160 scientists 48 D-Index: 134 scientists 49 D-Index: 130 scientists 50 D-Index: 141 scientists 51 D-Index: 156 scientists 52 D-Index: 108 scientists 53 D-Index: 130 scientists 54 D-Index: 112 scientists 55 D-Index: 97 scientists 56 D-Index: 111 scientists 57 D-Index: 102 scientists 58 D-Index: 108 scientists 59 D-Index: 120 scientists 60 D-Index: 103 scientists 61 D-Index: 93 scientists 62 D-Index: 92 scientists 63 D-Index: 74 scientists 64 D-Index: 77 scientists 65 D-Index: 73 scientists 66 D-Index: 64 scientists 67 D-Index: 69 scientists 68 D-Index: 60 scientists 69 D-Index: 39 scientists 70 D-Index: 57 scientists 71 D-Index: 59 scientists 72 D-Index: 46 scientists 73 D-Index: 49 scientists 74 D-Index: 38 scientists 75 D-Index: 35 scientists 76 D-Index: 32 scientists 77 D-Index: 35 scientists 78 D-Index: 31 scientists 79 D-Index: 22 scientists 80 D-Index: 34 scientists 81 D-Index: 31 scientists 82 D-Index: 34 scientists 83 D-Index: 23 scientists 84 D-Index: 18 scientists 85 D-Index: 30 scientists 86 D-Index: 19 scientists 87 D-Index: 19 scientists 88 D-Index: 20 scientists 89 D-Index: 8 scientists 90 D-Index: 17 scientists 91 D-Index: 7 scientists 92 D-Index: 14 scientists 93 D-Index: 9 scientists 94 D-Index: 15 scientists 95 D-Index: 10 scientists 96 D-Index: 12 scientists 97 D-Index: 10 scientists 98 D-Index: 10 scientists 99 D-Index: 12 scientists 100 D-Index: 16 scientists 101 D-Index: 5 scientists 102 D-Index: 7 scientists 103 D-Index: 7 scientists 104 D-Index: 8 scientists 105 D-Index: 9 scientists 106 D-Index: 13 scientists 107 D-Index: 4 scientists 108 D-Index: 5 scientists 109 D-Index: 10 scientists 110 D-Index: 8 scientists 111+ D-Index: 96 scientists
30 D-Index 111+

This scientist: 38 D-Index — 30th percentile

30% of scientists in this discipline score the same or lower.

The last bar groups every scientist with 111 D-Index or more.

Overview

Gouri Sankar Kar is affiliated with Imec in Belgium and has a significant publication record in the fields of Engineering and Materials Science, with a particular focus on Electrical and Electronic Engineering and Materials Chemistry. They have authored numerous papers, primarily exploring topics in semiconductor materials and devices, advanced memory and neural computing, and thin-film transistor technologies.

Their recent publications include:

  • Two-dimensional materials prospects for non-volatile spintronic memories, 2022, Nature
  • Ovonic Threshold-Switching GexSey Chalcogenide Materials: Stoichiometry, Trap Nature, and Material Relaxation from First Principles, 2020, physica status solidi (RRL) - Rapid Research Letters
  • Interplay of Voltage Control of Magnetic Anisotropy, Spin-Transfer Torque, and Heat in the Spin-Orbit-Torque Switching of Three-Terminal Magnetic Tunnel Junctions, 2021, Physical Review Applied
  • Understanding and modelling the PBTI reliability of thin-film IGZO transistors, 2021, 2021 IEEE International Electron Devices Meeting (IEDM)
  • Tailoring IGZO-TFT architecture for capacitorless DRAM, demonstrating > 103s retention, >1011 cycles endurance and Lg scalability down to 14nm, 2021, 2021 IEEE International Electron Devices Meeting (IEDM)

Frequent co-authors in their research collaborations include:

  • Romain Delhougne
  • Sébastien Couet
  • Attilio Belmonte
  • Sergiu Clima
  • Daniele Garbin

Their work is often published in venues such as:

  • IEEE Transactions on Electron Devices
  • IEEE Electron Device Letters
  • ACS Applied Electronic Materials
  • 2022 International Electron Devices Meeting (IEDM)
  • Applied Physics Letters

The main fields of study covered in their research are:

  • Engineering
  • Materials Science

These fields translate into subfields including:

  • Electrical and Electronic Engineering
  • Materials Chemistry
  • Atomic and Molecular Physics, and Optics
  • Electronic, Optical and Magnetic Materials
  • Biomedical Engineering

The primary research topics Kar addresses include:

  • Advanced Memory and Neural Computing
  • Semiconductor materials and devices
  • Ferroelectric and Negative Capacitance Devices
  • Magnetic properties of thin films
  • Phase-change materials and chalcogenides
  • Thin-Film Transistor Technologies
  • Chalcogenide Semiconductor Thin Films

Best Publications

  • 10×10nm 2 Hf/HfO x crossbar resistive RAM with excellent performance, reliability and low-energy operation

    B. Govoreanu;G.S. Kar;Y-Y. Chen;V. Paraschiv

  • Endurance/Retention Trade-off on $\hbox{HfO}_{2}/\hbox{Metal}$ Cap 1T1R Bipolar RRAM

    Yang Yin Chen;L. Goux;S. Clima;B. Govoreanu

  • Intrinsic switching variability in HfO 2 RRAM

    A. Fantini;L. Goux;R. Degraeve;D. J. Wouters

  • Balancing SET/RESET Pulse for $>\hbox{10}^{10}$ Endurance in $\hbox{HfO}_{2}\hbox{/Hf}$ 1T1R Bipolar RRAM

    Yang Yin Chen;B. Govoreanu;L. Goux;R. Degraeve

  • Manufacturable 300mm platform solution for Field-Free Switching SOT-MRAM

    K. Garello;F. Yasin;H. Hody;S. Couet

  • Capacitor-less, Long-Retention (>400s) DRAM Cell Paving the Way towards Low-Power and High-Density Monolithic 3D DRAM

    A. Belmonte;H. Oh;N. Rassoul;G.L. Donadio

  • SOT-MRAM 300MM Integration for Low Power and Ultrafast Embedded Memories

    K. Garello;F. Yasin;S. Couet;L. Souriau

  • Improvement of data retention in HfO 2 /Hf 1T1R RRAM cell under low operating current

    Yang Yin Chen;Masanori Komura;Robin Degraeve;Bogdan Govoreanu

  • Dynamic ‘hour glass’ model for SET and RESET in HfO 2 RRAM

    R. Degraeve;A. Fantini;S. Clima;B. Govoreanu

  • Understanding of the endurance failure in scaled HfO 2 -based 1T1R RRAM through vacancy mobility degradation

    Yang Yin Chen;Robin Degraeve;Sergiu Clima;Bogdan Govoreanu

  • Ultralow sub-500nA operating current high-performance TiN\Al 2 O 3 \HfO 2 \Hf\TiN bipolar RRAM achieved through understanding-based stack-engineering

    L. Goux;A. Fantini;G. Kar;Y.-Y. Chen

  • Charge storage and photoluminescence characteristics of silicon oxide embedded Ge nanocrystal trilayer structures

    K. Das;M. NandaGoswami;R. Mahapatra;G. S. Kar

  • Intrinsic Switching Behavior in HfO2 RRAM by Fast Electrical Measurements on Novel 2R Test Structures

    A. Fantini;D. J. Wouters;R. Degraeve;L. Goux

  • Tailoring IGZO-TFT architecture for capacitorless DRAM, demonstrating > 103s retention, >1011 cycles endurance and Lg scalability down to 14nm

    Unknown

  • Understanding and modelling the PBTI reliability of thin-film IGZO transistors

    Unknown

  • Analysis of Complementary RRAM Switching

    D. J. Wouters;Leqi Zhang;A. Fantini;R. Degraeve

  • Enablement of STT-MRAM as last level cache for the high performance computing domain at the 5nm node

    Unknown

  • Time-resolved spin-torque switching in MgO-based perpendicularly magnetized tunnel junctions

    T. Devolder;Joo-Von Kim;F. Garcia-Sanchez;J. Swerts

  • Voltage-Gate-Assisted Spin-Orbit-Torque Magnetic Random-Access Memory for High-Density and Low-Power Embedded Applications

    Y.C. Wu;K. Garello;K. Garello;W. Kim;M. Gupta

  • Thermally stable integrated Se-based OTS selectors with >20 MA/cm 2 current drive, >3.10 3 half-bias nonlinearity, tunable threshold voltage and excellent endurance

    B. Govoreanu;G. L. Donadio;K. Opsomer;W. Devulder

  • Field-driven ultrafast sub-ns programming in W\Al 2 O 3 \Ti\CuTe-based 1T1R CBRAM system

    L. Goux;K. Sankaran;G. Kar;N. Jossart

  • Field-free switching of magnetic tunnel junctions driven by spin-orbit torques at sub-ns timescales

    Viola Krizakova;Kevin Garello;Eva Grimaldi;Gouri Sankar Kar

  • Improvement of data retention in HfO2 / Hf 1T1R RRAM cell under low operating current

    Yang Yin Chen;Masanori Komura;Robin Degraeve;Bogdan Govoreanu

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