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Gouri Sankar Kar

Gouri Sankar Kar

D-Index & Metrics

Electronics and Electrical Engineering

D-Index
38
Citations
6772
World Ranking
4866
National Ranking
105

Overview

Gouri Sankar Kar is affiliated with Imec in Belgium and has a significant publication record in the fields of Engineering and Materials Science, with a particular focus on Electrical and Electronic Engineering and Materials Chemistry. They have authored numerous papers, primarily exploring topics in semiconductor materials and devices, advanced memory and neural computing, and thin-film transistor technologies.

Their recent publications include:

  • Two-dimensional materials prospects for non-volatile spintronic memories, 2022, Nature
  • Ovonic Threshold-Switching GexSey Chalcogenide Materials: Stoichiometry, Trap Nature, and Material Relaxation from First Principles, 2020, physica status solidi (RRL) - Rapid Research Letters
  • Interplay of Voltage Control of Magnetic Anisotropy, Spin-Transfer Torque, and Heat in the Spin-Orbit-Torque Switching of Three-Terminal Magnetic Tunnel Junctions, 2021, Physical Review Applied
  • Understanding and modelling the PBTI reliability of thin-film IGZO transistors, 2021, 2021 IEEE International Electron Devices Meeting (IEDM)
  • Tailoring IGZO-TFT architecture for capacitorless DRAM, demonstrating > 103s retention, >1011 cycles endurance and Lg scalability down to 14nm, 2021, 2021 IEEE International Electron Devices Meeting (IEDM)

Frequent co-authors in their research collaborations include:

  • Romain Delhougne
  • Sébastien Couet
  • Attilio Belmonte
  • Sergiu Clima
  • Daniele Garbin

Their work is often published in venues such as:

  • IEEE Transactions on Electron Devices
  • IEEE Electron Device Letters
  • ACS Applied Electronic Materials
  • 2022 International Electron Devices Meeting (IEDM)
  • Applied Physics Letters

The main fields of study covered in their research are:

  • Engineering
  • Materials Science

These fields translate into subfields including:

  • Electrical and Electronic Engineering
  • Materials Chemistry
  • Atomic and Molecular Physics, and Optics
  • Electronic, Optical and Magnetic Materials
  • Biomedical Engineering

The primary research topics Kar addresses include:

  • Advanced Memory and Neural Computing
  • Semiconductor materials and devices
  • Ferroelectric and Negative Capacitance Devices
  • Magnetic properties of thin films
  • Phase-change materials and chalcogenides
  • Thin-Film Transistor Technologies
  • Chalcogenide Semiconductor Thin Films

Best Publications

  • 10×10nm 2 Hf/HfO x crossbar resistive RAM with excellent performance, reliability and low-energy operation

    B. Govoreanu;G.S. Kar;Y-Y. Chen;V. Paraschiv

  • Endurance/Retention Trade-off on $\hbox{HfO}_{2}/\hbox{Metal}$ Cap 1T1R Bipolar RRAM

    Yang Yin Chen;L. Goux;S. Clima;B. Govoreanu

  • Intrinsic switching variability in HfO 2 RRAM

    A. Fantini;L. Goux;R. Degraeve;D. J. Wouters

  • Balancing SET/RESET Pulse for $>\hbox{10}^{10}$ Endurance in $\hbox{HfO}_{2}\hbox{/Hf}$ 1T1R Bipolar RRAM

    Yang Yin Chen;B. Govoreanu;L. Goux;R. Degraeve

  • Manufacturable 300mm platform solution for Field-Free Switching SOT-MRAM

    K. Garello;F. Yasin;H. Hody;S. Couet

  • Capacitor-less, Long-Retention (>400s) DRAM Cell Paving the Way towards Low-Power and High-Density Monolithic 3D DRAM

    A. Belmonte;H. Oh;N. Rassoul;G.L. Donadio

  • SOT-MRAM 300MM Integration for Low Power and Ultrafast Embedded Memories

    K. Garello;F. Yasin;S. Couet;L. Souriau

  • Improvement of data retention in HfO 2 /Hf 1T1R RRAM cell under low operating current

    Yang Yin Chen;Masanori Komura;Robin Degraeve;Bogdan Govoreanu

  • Dynamic ‘hour glass’ model for SET and RESET in HfO 2 RRAM

    R. Degraeve;A. Fantini;S. Clima;B. Govoreanu

  • Understanding of the endurance failure in scaled HfO 2 -based 1T1R RRAM through vacancy mobility degradation

    Yang Yin Chen;Robin Degraeve;Sergiu Clima;Bogdan Govoreanu

  • Ultralow sub-500nA operating current high-performance TiN\Al 2 O 3 \HfO 2 \Hf\TiN bipolar RRAM achieved through understanding-based stack-engineering

    L. Goux;A. Fantini;G. Kar;Y.-Y. Chen

  • Charge storage and photoluminescence characteristics of silicon oxide embedded Ge nanocrystal trilayer structures

    K. Das;M. NandaGoswami;R. Mahapatra;G. S. Kar

  • Intrinsic Switching Behavior in HfO2 RRAM by Fast Electrical Measurements on Novel 2R Test Structures

    A. Fantini;D. J. Wouters;R. Degraeve;L. Goux

  • Tailoring IGZO-TFT architecture for capacitorless DRAM, demonstrating > 103s retention, >1011 cycles endurance and Lg scalability down to 14nm

    Unknown

  • Understanding and modelling the PBTI reliability of thin-film IGZO transistors

    Unknown

  • Analysis of Complementary RRAM Switching

    D. J. Wouters;Leqi Zhang;A. Fantini;R. Degraeve

  • Enablement of STT-MRAM as last level cache for the high performance computing domain at the 5nm node

    Unknown

  • Time-resolved spin-torque switching in MgO-based perpendicularly magnetized tunnel junctions

    T. Devolder;Joo-Von Kim;F. Garcia-Sanchez;J. Swerts

  • Voltage-Gate-Assisted Spin-Orbit-Torque Magnetic Random-Access Memory for High-Density and Low-Power Embedded Applications

    Y.C. Wu;K. Garello;K. Garello;W. Kim;M. Gupta

  • Thermally stable integrated Se-based OTS selectors with >20 MA/cm 2 current drive, >3.10 3 half-bias nonlinearity, tunable threshold voltage and excellent endurance

    B. Govoreanu;G. L. Donadio;K. Opsomer;W. Devulder

  • Field-driven ultrafast sub-ns programming in W\Al 2 O 3 \Ti\CuTe-based 1T1R CBRAM system

    L. Goux;K. Sankaran;G. Kar;N. Jossart

  • Field-free switching of magnetic tunnel junctions driven by spin-orbit torques at sub-ns timescales

    Viola Krizakova;Kevin Garello;Eva Grimaldi;Gouri Sankar Kar

  • Improvement of data retention in HfO2 / Hf 1T1R RRAM cell under low operating current

    Yang Yin Chen;Masanori Komura;Robin Degraeve;Bogdan Govoreanu

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