2001 - IEEE Fellow For contributions in real-time computing systems and networks.
His primary areas of investigation include CMOS, Spin-transfer torque, Electronic engineering, Electrical engineering and Tunnel magnetoresistance. His studies deal with areas such as Electronic circuit, Logic gate, Magnetic circuit and Low-power electronics as well as CMOS. His Spin-transfer torque research includes elements of Nanopillar, Leakage, Optoelectronics, Torque and Process variation.
His Electronic engineering research includes themes of Power, Reliability, Artificial neural network, Magnetoresistive random-access memory and Miniaturization. His research on Tunnel magnetoresistance concerns the broader Condensed matter physics. While the research belongs to areas of Condensed matter physics, Weisheng Zhao spends his time largely on the problem of Magnetic anisotropy, intersecting his research to questions surrounding Layer.
Weisheng Zhao mainly focuses on Condensed matter physics, Electronic engineering, Spintronics, Magnetoresistive random-access memory and CMOS. His Condensed matter physics study incorporates themes from Magnetic field and Magnetization. His work on Memristor as part of general Electronic engineering study is frequently connected to Scalability, therefore bridging the gap between diverse disciplines of science and establishing a new relationship between them.
His research integrates issues of Optoelectronics and Engineering physics in his study of Spintronics. The study incorporates disciplines such as Transistor, AND gate, Electronic circuit and Logic gate in addition to CMOS. His Electrical engineering study deals with Spin-transfer torque intersecting with Tunnel magnetoresistance and Torque.
Weisheng Zhao spends much of his time researching Condensed matter physics, Spintronics, Optoelectronics, Magnetization and Magnetoresistive random-access memory. His studies in Condensed matter physics integrate themes in fields like Field, Work and Torque. His Spintronics research is multidisciplinary, incorporating perspectives in Magnetic anisotropy, van der Waals force, Spin and Skyrmion.
The concepts of his Magnetization study are interwoven with issues in Current density, Tunnel magnetoresistance and Optics. His Tunnel magnetoresistance research focuses on Power and how it relates to CMOS. His Magnetoresistive random-access memory research is multidisciplinary, relying on both Efficient energy use, Electrical engineering, Voltage and Embedded system.
His primary areas of study are Condensed matter physics, Spintronics, Magnetization, Optoelectronics and Skyrmion. His Condensed matter physics research incorporates themes from Field and Work. His work deals with themes such as van der Waals force, Heterojunction and Magnetoresistance, which intersect with Spintronics.
The Optoelectronics study combines topics in areas such as Tunnel magnetoresistance and Laser, Femtosecond. His study in Tunnel magnetoresistance is interdisciplinary in nature, drawing from both Transistor, Power gating, Spin-transfer torque and CMOS. His work carried out in the field of Latency brings together such families of science as Magnetoresistive random-access memory and Electronic engineering.
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Compact Modeling of Perpendicular-Anisotropy CoFeB/MgO Magnetic Tunnel Junctions
Yue Zhang;Weisheng Zhao;Y. Lakys;J. Klein.
IEEE Transactions on Electron Devices (2012)
High Speed, High Stability and Low Power Sensing Amplifier for MTJ/CMOS Hybrid Logic Circuits
Weisheng Zhao;C. Chappert;V. Javerliac;J.-P. Noziere.
IEEE Transactions on Magnetics (2009)
Spin-Transfer Torque Magnetic Memory as a Stochastic Memristive Synapse for Neuromorphic Systems
Adrien F. Vincent;Jerome Larroque;Nicolas Locatelli;Nesrine Ben Romdhane.
IEEE Transactions on Biomedical Circuits and Systems (2015)
Magnetic skyrmion transistor: skyrmion motion in a voltage-gated nanotrack
Xichao Zhang;Yan Zhou;Motohiko Ezawa;G. P. Zhao.
Scientific Reports (2015)
Strain-controlled magnetic domain wall propagation in hybrid piezoelectric/ferromagnetic structures
Na Lei;Na Lei;Thibaut Devolder;Thibaut Devolder;Guillaume Agnus;Guillaume Agnus;Pascal Aubert;Pascal Aubert.
Nature Communications (2013)
Skyrmion-Electronics: An Overview and Outlook
Wang Kang;Yangqi Huang;Xichao Zhang;Yan Zhou.
Proceedings of the IEEE (2016)
Failure and reliability analysis of STT-MRAM
Weisheng Zhao;Yue Zhang;Thibaut Devolder;Jacques-Olivier Klein.
Microelectronics Reliability (2012)
Skyrmion-electronics: writing, deleting, reading and processing magnetic skyrmions toward spintronic applications.
Xichao Zhang;Yan Zhou;Kyung Mee Song;Tae-Eon Park.
Journal of Physics: Condensed Matter (2020)
Two-dimensional spintronics for low-power electronics
Xiaoyang Lin;Wei Yang;Kang L. Wang;Weisheng Zhao.
Nature Electronics (2019)
Field-free switching of a perpendicular magnetic tunnel junction through the interplay of spin–orbit and spin-transfer torques
Mengxing Wang;Wenlong Cai;Daoqian Zhu;Zhaohao Wang.
Nature Electronics (2018)
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