H-Index & Metrics Top Publications

H-Index & Metrics

Discipline name H-index Citations Publications World Ranking National Ranking
Electronics and Electrical Engineering H-index 57 Citations 10,361 358 World Ranking 714 National Ranking 83

Research.com Recognitions

Awards & Achievements

2001 - IEEE Fellow For contributions in real-time computing systems and networks.

Overview

What is he best known for?

The fields of study he is best known for:

  • Quantum mechanics
  • Electrical engineering
  • Electron

His primary areas of investigation include CMOS, Spin-transfer torque, Electronic engineering, Electrical engineering and Tunnel magnetoresistance. His studies deal with areas such as Electronic circuit, Logic gate, Magnetic circuit and Low-power electronics as well as CMOS. His Spin-transfer torque research includes elements of Nanopillar, Leakage, Optoelectronics, Torque and Process variation.

His Electronic engineering research includes themes of Power, Reliability, Artificial neural network, Magnetoresistive random-access memory and Miniaturization. His research on Tunnel magnetoresistance concerns the broader Condensed matter physics. While the research belongs to areas of Condensed matter physics, Weisheng Zhao spends his time largely on the problem of Magnetic anisotropy, intersecting his research to questions surrounding Layer.

His most cited work include:

  • High Speed, High Stability and Low Power Sensing Amplifier for MTJ/CMOS Hybrid Logic Circuits (260 citations)
  • Compact Modeling of Perpendicular-Anisotropy CoFeB/MgO Magnetic Tunnel Junctions (260 citations)
  • Spin-Transfer Torque Magnetic Memory as a Stochastic Memristive Synapse for Neuromorphic Systems (207 citations)

What are the main themes of his work throughout his whole career to date?

Weisheng Zhao mainly focuses on Condensed matter physics, Electronic engineering, Spintronics, Magnetoresistive random-access memory and CMOS. His Condensed matter physics study incorporates themes from Magnetic field and Magnetization. His work on Memristor as part of general Electronic engineering study is frequently connected to Scalability, therefore bridging the gap between diverse disciplines of science and establishing a new relationship between them.

His research integrates issues of Optoelectronics and Engineering physics in his study of Spintronics. The study incorporates disciplines such as Transistor, AND gate, Electronic circuit and Logic gate in addition to CMOS. His Electrical engineering study deals with Spin-transfer torque intersecting with Tunnel magnetoresistance and Torque.

He most often published in these fields:

  • Condensed matter physics (27.96%)
  • Electronic engineering (22.53%)
  • Spintronics (21.28%)

What were the highlights of his more recent work (between 2019-2021)?

  • Condensed matter physics (27.96%)
  • Spintronics (21.28%)
  • Optoelectronics (15.72%)

In recent papers he was focusing on the following fields of study:

Weisheng Zhao spends much of his time researching Condensed matter physics, Spintronics, Optoelectronics, Magnetization and Magnetoresistive random-access memory. His studies in Condensed matter physics integrate themes in fields like Field, Work and Torque. His Spintronics research is multidisciplinary, incorporating perspectives in Magnetic anisotropy, van der Waals force, Spin and Skyrmion.

The concepts of his Magnetization study are interwoven with issues in Current density, Tunnel magnetoresistance and Optics. His Tunnel magnetoresistance research focuses on Power and how it relates to CMOS. His Magnetoresistive random-access memory research is multidisciplinary, relying on both Efficient energy use, Electrical engineering, Voltage and Embedded system.

Between 2019 and 2021, his most popular works were:

  • Skyrmion-electronics: writing, deleting, reading and processing magnetic skyrmions toward spintronic applications. (89 citations)
  • Skyrmion-based artificial synapses for neuromorphic computing (66 citations)
  • Spin pumping during the antiferromagnetic-ferromagnetic phase transition of iron-rhodium. (14 citations)

In his most recent research, the most cited papers focused on:

  • Quantum mechanics
  • Electron
  • Electrical engineering

His primary areas of study are Condensed matter physics, Spintronics, Magnetization, Optoelectronics and Skyrmion. His Condensed matter physics research incorporates themes from Field and Work. His work deals with themes such as van der Waals force, Heterojunction and Magnetoresistance, which intersect with Spintronics.

The Optoelectronics study combines topics in areas such as Tunnel magnetoresistance and Laser, Femtosecond. His study in Tunnel magnetoresistance is interdisciplinary in nature, drawing from both Transistor, Power gating, Spin-transfer torque and CMOS. His work carried out in the field of Latency brings together such families of science as Magnetoresistive random-access memory and Electronic engineering.

This overview was generated by a machine learning system which analysed the scientist’s body of work. If you have any feedback, you can contact us here.

Top Publications

High Speed, High Stability and Low Power Sensing Amplifier for MTJ/CMOS Hybrid Logic Circuits

Weisheng Zhao;C. Chappert;V. Javerliac;J.-P. Noziere.
IEEE Transactions on Magnetics (2009)

326 Citations

Compact Modeling of Perpendicular-Anisotropy CoFeB/MgO Magnetic Tunnel Junctions

Yue Zhang;Weisheng Zhao;Y. Lakys;J. Klein.
IEEE Transactions on Electron Devices (2012)

322 Citations

Strain-controlled magnetic domain wall propagation in hybrid piezoelectric/ferromagnetic structures

Na Lei;Na Lei;Thibaut Devolder;Thibaut Devolder;Guillaume Agnus;Guillaume Agnus;Pascal Aubert;Pascal Aubert.
Nature Communications (2013)

256 Citations

Spin-Transfer Torque Magnetic Memory as a Stochastic Memristive Synapse for Neuromorphic Systems

Adrien F. Vincent;Jerome Larroque;Nicolas Locatelli;Nesrine Ben Romdhane.
IEEE Transactions on Biomedical Circuits and Systems (2015)

229 Citations

Skyrmion-Electronics: An Overview and Outlook

Wang Kang;Yangqi Huang;Xichao Zhang;Yan Zhou.
Proceedings of the IEEE (2016)

209 Citations

Magnetic skyrmion transistor: skyrmion motion in a voltage-gated nanotrack

Xichao Zhang;Yan Zhou;Motohiko Ezawa;G. P. Zhao.
Scientific Reports (2015)

206 Citations

Failure and reliability analysis of STT-MRAM

Weisheng Zhao;Yue Zhang;Thibaut Devolder;Jacques-Olivier Klein.
Microelectronics Reliability (2012)

197 Citations

Spin transfer torque (STT)-MRAM--based runtime reconfiguration FPGA circuit

Weisheng Zhao;Eric Belhaire;Claude Chappert;Pascale Mazoyer.
ACM Transactions in Embedded Computing Systems (2009)

173 Citations

Current-induced magnetization switching in atom-thick tungsten engineered perpendicular magnetic tunnel junctions with large tunnel magnetoresistance.

Mengxing Wang;Wenlong Cai;Kaihua Cao;Jiaqi Zhou.
Nature Communications (2018)

173 Citations

Macro-model of Spin-Transfer Torque based Magnetic Tunnel Junction device for hybrid Magnetic-CMOS design

W. Zhao;E. Belhaire;Q. Mistral;C. Chappert.
international behavioral modeling and simulation workshop (2006)

143 Citations

Profile was last updated on December 6th, 2021.
Research.com Ranking is based on data retrieved from the Microsoft Academic Graph (MAG).
The ranking h-index is inferred from publications deemed to belong to the considered discipline.

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