World's Best Scientists 2026 revealed!
Tetsuo Endoh

Tetsuo Endoh

D-Index & Metrics

Electronics and Electrical Engineering

D-Index
46
Citations
9451
World Ranking
3354
National Ranking
122

Tetsuo Endoh publication distribution in Electronics and Electrical Engineering in 2026

The chart shows the distribution of publications by all Research.com ranked scientists in the field of Electronics and Electrical Engineering in 2026. The highlighted bar marks where Tetsuo Endoh sits on this spectrum.

34–53 publications: 24 scientists 54–73 publications: 52 scientists 74–93 publications: 114 scientists 94–113 publications: 203 scientists 114–133 publications: 269 scientists 134–153 publications: 355 scientists 154–173 publications: 403 scientists 174–193 publications: 445 scientists 194–213 publications: 430 scientists 214–233 publications: 431 scientists 234–253 publications: 399 scientists 254–273 publications: 366 scientists 274–293 publications: 335 scientists 294–313 publications: 300 scientists 314–333 publications: 276 scientists 334–353 publications: 250 scientists 354–373 publications: 214 scientists 374–393 publications: 187 scientists 394–413 publications: 152 scientists 414–433 publications: 169 scientists 434–453 publications: 147 scientists 454–473 publications: 111 scientists 474–493 publications: 117 scientists 494–513 publications: 103 scientists 514–533 publications: 99 scientists 534–553 publications: 92 scientists 554–573 publications: 75 scientists 574–593 publications: 58 scientists 594–613 publications: 69 scientists 614–633 publications: 50 scientists 634–653 publications: 62 scientists 654–673 publications: 54 scientists 674–693 publications: 44 scientists 694–713 publications: 37 scientists 714–733 publications: 28 scientists 734–753 publications: 26 scientists 754–773 publications: 26 scientists 774–793 publications: 19 scientists 794–813 publications: 23 scientists 814–833 publications: 20 scientists 834–853 publications: 16 scientists 854–873 publications: 20 scientists 874–893 publications: 11 scientists 894–913 publications: 11 scientists 914–933 publications: 16 scientists 934–953 publications: 13 scientists 954–973 publications: 10 scientists 974–993 publications: 11 scientists 994–1,013 publications: 9 scientists 1,014–1,033 publications: 9 scientists 1,034–1,053 publications: 10 scientists 1,054–1,064 publications: 6 scientists 1,065+ publications: 99 scientists
34 publications 1,065+

This scientist: 484 publications — 83rd percentile

83% of scientists in this discipline score the same or lower.

The last bar groups every scientist with 1,065 publications or more.

Tetsuo Endoh D-index placement in Electronics and Electrical Engineering in 2026

The chart shows the D-index (discipline H-index) distribution of Electronics and Electrical Engineering scientists ranked by Research.com in 2026. The highlighted bar marks where Tetsuo Endoh sits on this spectrum.

30 D-Index: 178 scientists 31 D-Index: 257 scientists 32 D-Index: 263 scientists 33 D-Index: 262 scientists 34 D-Index: 244 scientists 35 D-Index: 236 scientists 36 D-Index: 211 scientists 37 D-Index: 220 scientists 38 D-Index: 214 scientists 39 D-Index: 214 scientists 40 D-Index: 205 scientists 41 D-Index: 187 scientists 42 D-Index: 194 scientists 43 D-Index: 201 scientists 44 D-Index: 155 scientists 45 D-Index: 189 scientists 46 D-Index: 148 scientists 47 D-Index: 160 scientists 48 D-Index: 134 scientists 49 D-Index: 130 scientists 50 D-Index: 141 scientists 51 D-Index: 156 scientists 52 D-Index: 108 scientists 53 D-Index: 130 scientists 54 D-Index: 112 scientists 55 D-Index: 97 scientists 56 D-Index: 111 scientists 57 D-Index: 102 scientists 58 D-Index: 108 scientists 59 D-Index: 120 scientists 60 D-Index: 103 scientists 61 D-Index: 93 scientists 62 D-Index: 92 scientists 63 D-Index: 74 scientists 64 D-Index: 77 scientists 65 D-Index: 73 scientists 66 D-Index: 64 scientists 67 D-Index: 69 scientists 68 D-Index: 60 scientists 69 D-Index: 39 scientists 70 D-Index: 57 scientists 71 D-Index: 59 scientists 72 D-Index: 46 scientists 73 D-Index: 49 scientists 74 D-Index: 38 scientists 75 D-Index: 35 scientists 76 D-Index: 32 scientists 77 D-Index: 35 scientists 78 D-Index: 31 scientists 79 D-Index: 22 scientists 80 D-Index: 34 scientists 81 D-Index: 31 scientists 82 D-Index: 34 scientists 83 D-Index: 23 scientists 84 D-Index: 18 scientists 85 D-Index: 30 scientists 86 D-Index: 19 scientists 87 D-Index: 19 scientists 88 D-Index: 20 scientists 89 D-Index: 8 scientists 90 D-Index: 17 scientists 91 D-Index: 7 scientists 92 D-Index: 14 scientists 93 D-Index: 9 scientists 94 D-Index: 15 scientists 95 D-Index: 10 scientists 96 D-Index: 12 scientists 97 D-Index: 10 scientists 98 D-Index: 10 scientists 99 D-Index: 12 scientists 100 D-Index: 16 scientists 101 D-Index: 5 scientists 102 D-Index: 7 scientists 103 D-Index: 7 scientists 104 D-Index: 8 scientists 105 D-Index: 9 scientists 106 D-Index: 13 scientists 107 D-Index: 4 scientists 108 D-Index: 5 scientists 109 D-Index: 10 scientists 110 D-Index: 8 scientists 111+ D-Index: 96 scientists
30 D-Index 111+

This scientist: 46 D-Index — 52nd percentile

52% of scientists in this discipline score the same or lower.

The last bar groups every scientist with 111 D-Index or more.

Overview

Tetsuo Endoh is affiliated with Tohoku University in Japan and has contributed extensively to the fields of Physics and Astronomy, Engineering, and Materials Science. Their research spans several specialized subfields including Atomic and Molecular Physics and Optics, Electrical and Electronic Engineering, Electronic, Optical and Magnetic Materials, Materials Chemistry, and Condensed Matter Physics.

Their work frequently addresses topics such as magnetic properties of thin films, ZnO doping and properties, advanced memory and neural computing, physics of superconductivity and magnetism, magnetic properties and applications, magnetic and transport properties of perovskites and related materials, as well as ferroelectric and negative capacitance devices.

Notable recent publications by Endoh include:

  • Dual-Port SOT-MRAM Achieving 90-MHz Read and 60-MHz Write Operations Under Field-Assistance-Free Condition (2020, IEEE Journal of Solid-State Circuits)
  • Ultimate vertical gate-all-around metal-oxide-semiconductor field-effect transistor and its three-dimensional integrated circuits (2021, Materials Science in Semiconductor Processing)
  • Scalability of Quad Interface p-MTJ for 1X nm STT-MRAM With 10-ns Low Power Write Operation, 10 Years Retention and Endurance > 10¹¹ (2020, IEEE Transactions on Electron Devices)
  • Novel Quad-Interface MTJ Technology and its First Demonstration With High Thermal Stability Factor and Switching Efficiency for STT-MRAM Beyond 2X nm (2020, IEEE Transactions on Electron Devices)
  • First Demonstration of 25-nm Quad Interface p-MTJ Device With Low Resistance-Area Product MgO and Ten Years Retention for High Reliable STT-MRAM (2021, IEEE Transactions on Electron Devices)

Endoh frequently collaborates with a number of co-authors, among whom Shoji Ikeda stands out with 33 joint works, followed by H. Honjo, Hiroshi Naganuma, Y. Saito, and Yitao Ma.

Their research is predominantly published in venues such as IEEE Transactions on Magnetics, AIP Advances, Physical Review B, IEEE Transactions on Electron Devices, and IEEE Transactions on Industrial Informatics.

Best Publications

  • Non-volatile semiconductor memory device and method of programming a non-volatile memory cell to a predetermined state

    Tetsuo Endoh;Yoshiyuki Tanaka;Seiichi Aritome;Riichiro Shirota

  • Novel ultra high density flash memory with a stacked-surrounding gate transistor (S-SGT) structured cell

    T. Endoh;K. Kinoshita;T. Tanigami;Y. Wada

  • Electrically erasable programmable read-only memory with NAND cell structure

    Tetsuo Endoh;Riichiro Shirota;Masaki Momodomi;Tomoharu Tanaka

  • Fabrication of a Nonvolatile Full Adder Based on Logic-in-Memory Architecture Using Magnetic Tunnel Junctions

    Shoun Matsunaga;Jun Hayakawa;Shoji Ikeda;Katsuya Miura;Katsuya Miura

  • Reliability issues of flash memory cells

    S. Aritome;R. Shirota;G. Hemink;T. Endoh

  • Semiconductor memory and its production process

    Tetsuo Endoh;Fujio Masuoka;Takuji Tanigami;Takashi Yokoyama

  • Electrically erasable and programmable non-volatile and multi-level memory systemn with write-verify controller

    Tetsuo Endoh;Riichiro Shirota;Kazunori Ohuchi;Ryouhei Kirisawa

  • 0.18-/spl mu/m CMOS 10-Gb/s multiplexer/demultiplexer ICs using current mode logic with tolerance to threshold voltage fluctuation

    A. Tanabe;M. Umetani;I. Fujiwara;T. Ogura

  • An Overview of Nonvolatile Emerging Memories— Spintronics for Working Memories

    Tetsuo Endoh;Hiroki Koike;Shoji Ikeda;Takahiro Hanyu

  • Standby-Power-Free Integrated Circuits Using MTJ-Based VLSI Computing

    Takahiro Hanyu;Tetsuo Endoh;Daisuke Suzuki;Hiroki Koike

  • Fast and accurate programming method for multi-level NAND EEPROMs

    G.J. Hemink;T. Tanaka;T. Endoh;S. Aritome

  • Standby-Power-Free Compact Ternary Content-Addressable Memory Cell Chip Using Magnetic Tunnel Junction Devices

    Shoun Matsunaga;Kimiyuki Hiyama;Atsushi Matsumoto;Shoji Ikeda

  • A 3.14 um 2 4T-2MTJ-cell fully parallel TCAM based on nonvolatile logic-in-memory architecture

    Shoun Matsunaga;Sadahiko Miura;Hiroaki Honjou;Keizo Kinoshita

  • Magnetic tunnel junction for nonvolatile CMOS logic

    Hideo Ohno;Tetsuo Endoh;Takahiro Hanyu;Naoki Kasai

  • A reliable bi-polarity write/erase technology in flash EEPROMs

    S. Aritome;R. Shirota;R. Kirisawa;T. Endoh

  • 10.5 A 90nm 20MHz fully nonvolatile microcontroller for standby-power-critical applications

    Noboru Sakimura;Yukihide Tsuji;Ryusuke Nebashi;Hiroaki Honjo

  • A NAND structured cell with a new programming technology for highly reliable 5 V-only flash EEPROM

    R. Kirisawa;S. Aritome;R. Nakayama;T. Endoh

  • Semiconductor device having inversion inducing gate

    Tetsuo Endoh

  • MTJ-based nonvolatile logic-in-memory circuit, future prospects and issues

    Shoun Matsunaga;Jun Hayakawa;Shoji Ikeda;Katsuya Miura

  • Semiconductor memory with gate at least partially located in recess defined in vertically oriented semiconductor layer

    Tetsuo Endoh;Fujio Masuoka;Takuji Tanigami;Takashi Yokoyama

Frequent Co-Authors

Hideo Ohno
Hideo Ohno Tohoku University
Takahiro Hanyu
Takahiro Hanyu Tohoku University
Kenji Shiraishi
Kenji Shiraishi Nagoya University
Shoji Ikeda
Shoji Ikeda Tohoku University
Seiichi Aritome
Seiichi Aritome Chuo University
Tomoharu Tanaka
Tomoharu Tanaka Toshiba (Japan)
Seiichi Miyazaki
Seiichi Miyazaki Hiroshima University
Kohei M. Itoh
Kohei M. Itoh Keio University
Yasuhiro Yoshida
Yasuhiro Yoshida Hokkaido University

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