World's Best Scientists 2026 revealed!
Fumihiro Matsukura

Fumihiro Matsukura

D-Index & Metrics

Materials Science

D-Index
82
Citations
51282
World Ranking
2427
National Ranking
101

Physics

D-Index
82
Citations
51308
World Ranking
2813
National Ranking
81

Overview

Fumihiro Matsukura is affiliated with Tohoku University in Japan and has contributed to research primarily in the fields of Physics and Astronomy, as well as Materials Science. Their work spans various subfields, including Atomic and Molecular Physics and Optics, Condensed Matter Physics, and Materials Chemistry.

Their research focuses on topics such as Topological Materials and Phenomena, 2D Materials and Applications, Magnetic properties of thin films, Theoretical and Computational Physics, Physics of Superconductivity and Magnetism, Advanced Condensed Matter Physics, and Graphene research and applications.

They have published in several well-known scientific venues, including Applied Physics Letters, Physical Review B, and arXiv (Cornell University).

Some of their recent publications include:

  • Electric-field effect on magnetic moments in Co ultra-thin films deposited on Pt, 2021, Applied Physics Letters
  • Indication of exchange interaction induced spin splitting in unoccupied electronic states of the high-TC ferromagnet (Cr0.35Sb0.65)2Te3, 2024, Physical Review B
  • Unusual band evolution and persistence of topological surface states in high-TC magnetic topological insulator, 2023, arXiv (Cornell University)

Frequent co-authors collaborating with Matsukura include C. W. Chuang, Yuki Nakata, K. Hori, Sachin Gupta, and Thi Phuc Tan Nguyen.

Best Publications

  • Zener Model Description of Ferromagnetism in Zinc-Blende Magnetic Semiconductors

    T. Dietl;H. Ohno;F. Matsukura;J. Cibert

  • A perpendicular-anisotropy CoFeB–MgO magnetic tunnel junction

    S. Ikeda;K. Miura;K. Miura;H. Yamamoto;H. Yamamoto;K. Mizunuma

  • Electrical spin injection in a ferromagnetic semiconductor heterostructure

    Y. Ohno;D. K. Young;B. Beschoten;Fumihiro Matsukura

  • (Ga,Mn)As: A new diluted magnetic semiconductor based on GaAs

    H. Ohno;A. Shen;F. Matsukura;A. Oiwa

  • Electric-field control of ferromagnetism

    H. Ohno;D. Chiba;F. Matsukura;T. Omiya

  • Tunnel magnetoresistance of 604% at 300K by suppression of Ta diffusion in CoFeB∕MgO∕CoFeB pseudo-spin-valves annealed at high temperature

    S. Ikeda;J. Hayakawa;Y. Ashizawa;Y. M. Lee

  • Hole-mediated ferromagnetism in tetrahedrally coordinated semiconductors

    T. Dietl;T. Dietl;H. Ohno;F. Matsukura

  • Transport properties and origin of ferromagnetism in (Ga, Mn)As

    F. Matsukura;H. Ohno;A. Shen;Y. Sugawara

  • Control of magnetism by electric fields

    Fumihiro Matsukura;Yoshinori Tokura;Hideo Ohno

  • Current-induced domain-wall switching in a ferromagnetic semiconductor structure

    Michihiko Yamanouchi;D. Chiba;F. Matsukura;H. Ohno

  • Electrical Manipulation of Magnetization Reversal in a Ferromagnetic Semiconductor

    D. Chiba;M. Yamanouchi;F. Matsukura;H. Ohno

  • Magnetization vector manipulation by electric fields

    D. Chiba;M. Sawicki;M. Sawicki;Y. Nishitani;Y. Nakatani

  • Electric-field effects on thickness dependent magnetic anisotropy of sputtered MgO/Co40Fe40B20/Ta structures

    M. Endo;S. Kanai;S. Ikeda;F. Matsukura

  • Magnetic Tunnel Junctions for Spintronic Memories and Beyond

    S. Ikeda;J. Hayakawa;Young Min Lee;F. Matsukura

  • Spin Relaxation in GaAs(110) Quantum Wells

    Yuzo Ohno;R. Terauchi;T. Adachi;Fumihiro Matsukura

  • Effect of electrode composition on the tunnel magnetoresistance of pseudo-spin-valve magnetic tunnel junction with a MgO tunnel barrier

    Y. M. Lee;J. Hayakawa;S. Ikeda;F. Matsukura

  • Electric field-induced magnetization reversal in a perpendicular-anisotropy CoFeB-MgO magnetic tunnel junction

    S. Kanai;M. Yamanouchi;S. Ikeda;Y. Nakatani

  • High Mobility Thin Film Transistors with Transparent ZnO Channels.

    Junya Nishii;Faruque M. Hossain;Faruque M. Hossain;Shingo Takagi;Shingo Takagi;Tetsuya Aita

  • Magnetic circular dichroism studies of carrier-induced ferromagnetism in (Ga1-xMnx)as

    B. Beschoten;P. A. Crowell;P. A. Crowell;I. Malajovich;D. D. Awschalom

  • Dependence of Giant Tunnel Magnetoresistance of Sputtered CoFeB/MgO/CoFeB Magnetic Tunnel Junctions on MgO Barrier Thickness and Annealing Temperature

    Jun Hayakawa;Jun Hayakawa;Shoji Ikeda;Fumihiro Matsukura;Hiromasa Takahashi;Hiromasa Takahashi

Frequent Co-Authors

Hideo Ohno
Hideo Ohno Tohoku University
Shoji Ikeda
Shoji Ikeda Tohoku University
Tomasz Dietl
Tomasz Dietl Tohoku University
Yoshiji Horikoshi
Yoshiji Horikoshi Waseda University
Tomoteru Fukumura
Tomoteru Fukumura Tohoku University
Takayuki Kawahara
Takayuki Kawahara Tokyo University of Science
Masashi Kawasaki
Masashi Kawasaki University of Tokyo
Akira Ohtomo
Akira Ohtomo Tokyo Institute of Technology
David D. Awschalom
David D. Awschalom Argonne National Laboratory
Kazuhiro Hono
Kazuhiro Hono National Institute for Materials Science

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