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Shoji Ikeda

Shoji Ikeda

D-Index & Metrics

Materials Science

D-Index
57
Citations
18849
World Ranking
7840
National Ranking
438

Overview

Shoji Ikeda is affiliated with Tohoku University in Japan. Their research primarily focuses on the intersection of physics, materials science, and engineering, particularly in magnetic properties and applications relevant to advanced memory technologies and materials characterization.

The scientist's work spans several main fields of study, including:

  • Physics and Astronomy
  • Materials Science

Subfields where the scientist has contributed include:

  • Atomic and Molecular Physics, and Optics
  • Electronic, Optical and Magnetic Materials
  • Electrical and Electronic Engineering
  • Condensed Matter Physics
  • Materials Chemistry

Main topics covered by their research are:

  • Magnetic properties of thin films
  • Physics of Superconductivity and Magnetism
  • Magnetic Properties and Applications
  • ZnO doping and properties
  • Advanced Memory and Neural Computing
  • Magnetic and transport properties of perovskites and related materials
  • Magneto-Optical Properties and Applications

Shoji Ikeda has published extensively in several scientific journals. Frequent publication venues include:

  • AIP Advances
  • IEEE Transactions on Magnetics
  • Physical Review B
  • IEEE Transactions on Electron Devices
  • Applied Physics Letters

Some of the scientist's recent papers are:

  • "Dual-Port SOT-MRAM Achieving 90-MHz Read and 60-MHz Write Operations Under Field-Assistance-Free Condition," 2020, IEEE Journal of Solid-State Circuits
  • "Scalability of Quad Interface p-MTJ for 1X nm STT-MRAM With 10-ns Low Power Write Operation, 10 Years Retention and Endurance > 10¹¹," 2020, IEEE Transactions on Electron Devices
  • "Novel Quad-Interface MTJ Technology and its First Demonstration With High Thermal Stability Factor and Switching Efficiency for STT-MRAM Beyond 2X nm," 2020, IEEE Transactions on Electron Devices
  • "First Demonstration of 25-nm Quad Interface p-MTJ Device With Low Resistance-Area Product MgO and Ten Years Retention for High Reliable STT-MRAM," 2021, IEEE Transactions on Electron Devices
  • "Antiferromagnetic interlayer exchange coupling and large spin Hall effect in multilayer systems with Pt/Ir/Pt and Pt/Ir layers," 2021, Physical Review B

Their research collaborations are indicated by frequent co-authorship with several scientists, including:

  • Tetsuo Endoh
  • H. Honjo
  • Hiroshi Naganuma
  • Y. Saito
  • T. V. A. Nguyen

Best Publications

  • A perpendicular-anisotropy CoFeB–MgO magnetic tunnel junction

    S. Ikeda;K. Miura;K. Miura;H. Yamamoto;H. Yamamoto;K. Mizunuma

  • Tunnel magnetoresistance of 604% at 300K by suppression of Ta diffusion in CoFeB∕MgO∕CoFeB pseudo-spin-valves annealed at high temperature

    S. Ikeda;J. Hayakawa;Y. Ashizawa;Y. M. Lee

  • Electric-field effects on thickness dependent magnetic anisotropy of sputtered MgO/Co40Fe40B20/Ta structures

    M. Endo;S. Kanai;S. Ikeda;F. Matsukura

  • Magnetic Tunnel Junctions for Spintronic Memories and Beyond

    S. Ikeda;J. Hayakawa;Young Min Lee;F. Matsukura

  • Effect of electrode composition on the tunnel magnetoresistance of pseudo-spin-valve magnetic tunnel junction with a MgO tunnel barrier

    Y. M. Lee;J. Hayakawa;S. Ikeda;F. Matsukura

  • Fabrication of a Nonvolatile Full Adder Based on Logic-in-Memory Architecture Using Magnetic Tunnel Junctions

    Shoun Matsunaga;Jun Hayakawa;Shoji Ikeda;Katsuya Miura;Katsuya Miura

  • Electric field-induced magnetization reversal in a perpendicular-anisotropy CoFeB-MgO magnetic tunnel junction

    S. Kanai;M. Yamanouchi;S. Ikeda;Y. Nakatani

  • Dependence of Giant Tunnel Magnetoresistance of Sputtered CoFeB/MgO/CoFeB Magnetic Tunnel Junctions on MgO Barrier Thickness and Annealing Temperature

    Jun Hayakawa;Jun Hayakawa;Shoji Ikeda;Fumihiro Matsukura;Hiromasa Takahashi;Hiromasa Takahashi

  • Perpendicular-anisotropy CoFeB-MgO magnetic tunnel junctions with a MgO/CoFeB/Ta/CoFeB/MgO recording structure

    H. Sato;M. Yamanouchi;S. Ikeda;S. Fukami

  • Properties of magnetic tunnel junctions with a MgO/CoFeB/Ta/CoFeB/MgO recording structure down to junction diameter of 11 nm

    H. Sato;E. C. I. Enobio;M. Yamanouchi;S. Ikeda

  • 2Mb Spin-Transfer Torque RAM (SPRAM) with Bit-by-Bit Bidirectional Current Write and Parallelizing-Direction Current Read

    T. Kawahara;R. Takemura;K. Miura;J. Hayakawa

  • Effect of high annealing temperature on giant tunnel magnetoresistance ratio of CoFeB∕MgO∕CoFeB magnetic tunnel junctions

    J. Hayakawa;S. Ikeda;Y. M. Lee;F. Matsukura

  • Dependence of Giant Tunnel Magnetoresistance of Sputtered CoFeB/MgO/CoFeB Magnetic Tunnel Junctions on MgO Barrier Thickness and Annealing Temperatur

    Jun Hayakawa;Shoji Ikeda;Fumihiro Matsukura;Hiromasa Takahashi

  • Single-shot time-resolved measurements of nanosecond-scale spin-transfer induced switching: stochastic versus deterministic aspects.

    T. Devolder;J. Hayakawa;K. Ito;H. Takahashi

  • 2 Mb SPRAM (SPin-Transfer Torque RAM) With Bit-by-Bit Bi-Directional Current Write and Parallelizing-Direction Current Read

    T. Kawahara;R. Takemura;K. Miura;J. Hayakawa

  • Current-Driven Magnetization Switching in CoFeB/MgO/CoFeB Magnetic Tunnel Junctions

    Jun Hayakawa;Jun Hayakawa;Shoji Ikeda;Young Min Lee;Ryutaro Sasaki

  • Giant tunnel magnetoresistance and high annealing stability in CoFeB/MgO/CoFeB magnetic tunnel junctions with synthetic pinned layer

    Y. M. Lee;J. Hayakawa;S. Ikeda;F. Matsukura

  • Current-induced effective field in perpendicularly magnetized Ta/CoFeB/MgO wire

    T. Suzuki;S. Fukami;N. Ishiwata;M. Yamanouchi

  • MgO/CoFeB/Ta/CoFeB/MgO Recording Structure in Magnetic Tunnel Junctions With Perpendicular Easy Axis

    Hideo Sato;Michihiko Yamanouchi;Shoji Ikeda;Shunsuke Fukami

  • Current-Induced Magnetization Switching in MgO Barrier Based Magnetic Tunnel Junctions with CoFeB/Ru/CoFeB Synthetic Ferrimagnetic Free Layer

    Jun Hayakawa;Jun Hayakawa;Shoji Ikeda;Young Min Lee;Ryutaro Sasaki

  • A 32-Mb SPRAM With 2T1R Memory Cell, Localized Bi-Directional Write Driver and '1'/'0' Dual-Array Equalized Reference Scheme

    Riichiro Takemura;Takayuki Kawahara;Katsuya Miura;Hiroyuki Yamamoto

  • Domain Structure in CoFeB Thin Films With Perpendicular Magnetic Anisotropy

    Michihiko Yamanouchi;Albrecht Jander;Pallavi Dhagat;Shoji Ikeda

Frequent Co-Authors

Hideo Ohno
Hideo Ohno Tohoku University
Fumihiro Matsukura
Fumihiro Matsukura Tohoku University
Tetsuo Endoh
Tetsuo Endoh Tohoku University
Takahiro Hanyu
Takahiro Hanyu Tohoku University
Takayuki Kawahara
Takayuki Kawahara Tokyo University of Science
Mikihiko Oogane
Mikihiko Oogane Tohoku University
Kazuhiro Hono
Kazuhiro Hono National Institute for Materials Science
Yuichi Ikuhara
Yuichi Ikuhara University of Tokyo
Mitsumasa Koyanagi
Mitsumasa Koyanagi Tohoku University
Tadakatsu Ohkubo
Tadakatsu Ohkubo National Institute for Materials Science

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