World's Best Scientists 2026 revealed!
Shoji Ikeda

Shoji Ikeda

D-Index & Metrics

Materials Science

D-Index
57
Citations
18849
World Ranking
7838
National Ranking
438

Shoji Ikeda publication distribution in Materials Science in 2026

The chart shows the distribution of publications by all Research.com ranked scientists in the field of Materials Science in 2026. The highlighted bar marks where Shoji Ikeda sits on this spectrum.

50–69 publications: 28 scientists 70–89 publications: 152 scientists 90–109 publications: 356 scientists 110–129 publications: 487 scientists 130–149 publications: 723 scientists 150–169 publications: 835 scientists 170–189 publications: 850 scientists 190–209 publications: 891 scientists 210–229 publications: 862 scientists 230–249 publications: 766 scientists 250–269 publications: 726 scientists 270–289 publications: 665 scientists 290–309 publications: 593 scientists 310–329 publications: 537 scientists 330–349 publications: 477 scientists 350–369 publications: 440 scientists 370–389 publications: 356 scientists 390–409 publications: 321 scientists 410–429 publications: 256 scientists 430–449 publications: 246 scientists 450–469 publications: 216 scientists 470–489 publications: 212 scientists 490–509 publications: 174 scientists 510–529 publications: 194 scientists 530–549 publications: 162 scientists 550–569 publications: 131 scientists 570–589 publications: 111 scientists 590–609 publications: 103 scientists 610–629 publications: 99 scientists 630–649 publications: 77 scientists 650–669 publications: 92 scientists 670–689 publications: 56 scientists 690–709 publications: 53 scientists 710–729 publications: 53 scientists 730–749 publications: 38 scientists 750–769 publications: 52 scientists 770–789 publications: 43 scientists 790–809 publications: 38 scientists 810–829 publications: 34 scientists 830–849 publications: 25 scientists 850–869 publications: 18 scientists 870–889 publications: 20 scientists 890–909 publications: 24 scientists 910–929 publications: 27 scientists 930–949 publications: 20 scientists 950–969 publications: 17 scientists 970–989 publications: 10 scientists 990–1,009 publications: 16 scientists 1,010–1,029 publications: 13 scientists 1,030–1,049 publications: 12 scientists 1,050–1,069 publications: 9 scientists 1,070–1,089 publications: 8 scientists 1,090–1,109 publications: 7 scientists 1,110–1,129 publications: 9 scientists 1,130–1,149 publications: 2 scientists 1,150–1,162 publications: 5 scientists 1,163+ publications: 100 scientists
50 publications 1,163+

This scientist: 234 publications — 42nd percentile

42% of scientists in this discipline score the same or lower.

The last bar groups every scientist with 1,163 publications or more.

Shoji Ikeda D-index placement in Materials Science in 2026

The chart shows the D-index (discipline H-index) distribution of Materials Science scientists ranked by Research.com in 2026. The highlighted bar marks where Shoji Ikeda sits on this spectrum.

40–41 D-Index: 211 scientists 42–43 D-Index: 450 scientists 44–45 D-Index: 612 scientists 46–47 D-Index: 612 scientists 48–49 D-Index: 598 scientists 50–51 D-Index: 657 scientists 52–53 D-Index: 667 scientists 54–55 D-Index: 621 scientists 56–57 D-Index: 597 scientists 58–59 D-Index: 610 scientists 60–61 D-Index: 587 scientists 62–63 D-Index: 606 scientists 64–65 D-Index: 533 scientists 66–67 D-Index: 490 scientists 68–69 D-Index: 469 scientists 70–71 D-Index: 378 scientists 72–73 D-Index: 421 scientists 74–75 D-Index: 359 scientists 76–77 D-Index: 323 scientists 78–79 D-Index: 299 scientists 80–81 D-Index: 230 scientists 82–83 D-Index: 210 scientists 84–85 D-Index: 195 scientists 86–87 D-Index: 203 scientists 88–89 D-Index: 175 scientists 90–91 D-Index: 175 scientists 92–93 D-Index: 142 scientists 94–95 D-Index: 121 scientists 96–97 D-Index: 117 scientists 98–99 D-Index: 107 scientists 100–101 D-Index: 88 scientists 102–103 D-Index: 85 scientists 104–105 D-Index: 68 scientists 106–107 D-Index: 62 scientists 108–109 D-Index: 57 scientists 110–111 D-Index: 45 scientists 112–113 D-Index: 49 scientists 114–115 D-Index: 50 scientists 116–117 D-Index: 34 scientists 118–119 D-Index: 38 scientists 120–121 D-Index: 37 scientists 122–123 D-Index: 29 scientists 124–125 D-Index: 28 scientists 126–127 D-Index: 24 scientists 128–129 D-Index: 33 scientists 130–131 D-Index: 28 scientists 132–133 D-Index: 21 scientists 134–135 D-Index: 20 scientists 136–137 D-Index: 23 scientists 138–139 D-Index: 17 scientists 140–141 D-Index: 12 scientists 142–143 D-Index: 17 scientists 144–145 D-Index: 21 scientists 146–147 D-Index: 13 scientists 148–149 D-Index: 11 scientists 150–151 D-Index: 14 scientists 152–153 D-Index: 13 scientists 154–155 D-Index: 9 scientists 156–157 D-Index: 10 scientists 158–159 D-Index: 7 scientists 160–161 D-Index: 4 scientists 162–163 D-Index: 4 scientists 164 D-Index: 3 scientists 165+ D-Index: 98 scientists
40 D-Index 165+

This scientist: 57 D-Index — 39th percentile

39% of scientists in this discipline score the same or lower.

The last bar groups every scientist with 165 D-Index or more.

Overview

Shoji Ikeda is affiliated with Tohoku University in Japan. Their research primarily focuses on the intersection of physics, materials science, and engineering, particularly in magnetic properties and applications relevant to advanced memory technologies and materials characterization.

The scientist's work spans several main fields of study, including:

  • Physics and Astronomy
  • Materials Science

Subfields where the scientist has contributed include:

  • Atomic and Molecular Physics, and Optics
  • Electronic, Optical and Magnetic Materials
  • Electrical and Electronic Engineering
  • Condensed Matter Physics
  • Materials Chemistry

Main topics covered by their research are:

  • Magnetic properties of thin films
  • Physics of Superconductivity and Magnetism
  • Magnetic Properties and Applications
  • ZnO doping and properties
  • Advanced Memory and Neural Computing
  • Magnetic and transport properties of perovskites and related materials
  • Magneto-Optical Properties and Applications

Shoji Ikeda has published extensively in several scientific journals. Frequent publication venues include:

  • AIP Advances
  • IEEE Transactions on Magnetics
  • Physical Review B
  • IEEE Transactions on Electron Devices
  • Applied Physics Letters

Some of the scientist's recent papers are:

  • "Dual-Port SOT-MRAM Achieving 90-MHz Read and 60-MHz Write Operations Under Field-Assistance-Free Condition," 2020, IEEE Journal of Solid-State Circuits
  • "Scalability of Quad Interface p-MTJ for 1X nm STT-MRAM With 10-ns Low Power Write Operation, 10 Years Retention and Endurance > 10¹¹," 2020, IEEE Transactions on Electron Devices
  • "Novel Quad-Interface MTJ Technology and its First Demonstration With High Thermal Stability Factor and Switching Efficiency for STT-MRAM Beyond 2X nm," 2020, IEEE Transactions on Electron Devices
  • "First Demonstration of 25-nm Quad Interface p-MTJ Device With Low Resistance-Area Product MgO and Ten Years Retention for High Reliable STT-MRAM," 2021, IEEE Transactions on Electron Devices
  • "Antiferromagnetic interlayer exchange coupling and large spin Hall effect in multilayer systems with Pt/Ir/Pt and Pt/Ir layers," 2021, Physical Review B

Their research collaborations are indicated by frequent co-authorship with several scientists, including:

  • Tetsuo Endoh
  • H. Honjo
  • Hiroshi Naganuma
  • Y. Saito
  • T. V. A. Nguyen

Best Publications

  • A perpendicular-anisotropy CoFeB–MgO magnetic tunnel junction

    S. Ikeda;K. Miura;K. Miura;H. Yamamoto;H. Yamamoto;K. Mizunuma

  • Tunnel magnetoresistance of 604% at 300K by suppression of Ta diffusion in CoFeB∕MgO∕CoFeB pseudo-spin-valves annealed at high temperature

    S. Ikeda;J. Hayakawa;Y. Ashizawa;Y. M. Lee

  • Electric-field effects on thickness dependent magnetic anisotropy of sputtered MgO/Co40Fe40B20/Ta structures

    M. Endo;S. Kanai;S. Ikeda;F. Matsukura

  • Magnetic Tunnel Junctions for Spintronic Memories and Beyond

    S. Ikeda;J. Hayakawa;Young Min Lee;F. Matsukura

  • Effect of electrode composition on the tunnel magnetoresistance of pseudo-spin-valve magnetic tunnel junction with a MgO tunnel barrier

    Y. M. Lee;J. Hayakawa;S. Ikeda;F. Matsukura

  • Fabrication of a Nonvolatile Full Adder Based on Logic-in-Memory Architecture Using Magnetic Tunnel Junctions

    Shoun Matsunaga;Jun Hayakawa;Shoji Ikeda;Katsuya Miura;Katsuya Miura

  • Electric field-induced magnetization reversal in a perpendicular-anisotropy CoFeB-MgO magnetic tunnel junction

    S. Kanai;M. Yamanouchi;S. Ikeda;Y. Nakatani

  • Dependence of Giant Tunnel Magnetoresistance of Sputtered CoFeB/MgO/CoFeB Magnetic Tunnel Junctions on MgO Barrier Thickness and Annealing Temperature

    Jun Hayakawa;Jun Hayakawa;Shoji Ikeda;Fumihiro Matsukura;Hiromasa Takahashi;Hiromasa Takahashi

  • Perpendicular-anisotropy CoFeB-MgO magnetic tunnel junctions with a MgO/CoFeB/Ta/CoFeB/MgO recording structure

    H. Sato;M. Yamanouchi;S. Ikeda;S. Fukami

  • Properties of magnetic tunnel junctions with a MgO/CoFeB/Ta/CoFeB/MgO recording structure down to junction diameter of 11 nm

    H. Sato;E. C. I. Enobio;M. Yamanouchi;S. Ikeda

  • 2Mb Spin-Transfer Torque RAM (SPRAM) with Bit-by-Bit Bidirectional Current Write and Parallelizing-Direction Current Read

    T. Kawahara;R. Takemura;K. Miura;J. Hayakawa

  • Effect of high annealing temperature on giant tunnel magnetoresistance ratio of CoFeB∕MgO∕CoFeB magnetic tunnel junctions

    J. Hayakawa;S. Ikeda;Y. M. Lee;F. Matsukura

  • Dependence of Giant Tunnel Magnetoresistance of Sputtered CoFeB/MgO/CoFeB Magnetic Tunnel Junctions on MgO Barrier Thickness and Annealing Temperatur

    Jun Hayakawa;Shoji Ikeda;Fumihiro Matsukura;Hiromasa Takahashi

  • Single-shot time-resolved measurements of nanosecond-scale spin-transfer induced switching: stochastic versus deterministic aspects.

    T. Devolder;J. Hayakawa;K. Ito;H. Takahashi

  • 2 Mb SPRAM (SPin-Transfer Torque RAM) With Bit-by-Bit Bi-Directional Current Write and Parallelizing-Direction Current Read

    T. Kawahara;R. Takemura;K. Miura;J. Hayakawa

  • Current-Driven Magnetization Switching in CoFeB/MgO/CoFeB Magnetic Tunnel Junctions

    Jun Hayakawa;Jun Hayakawa;Shoji Ikeda;Young Min Lee;Ryutaro Sasaki

  • Giant tunnel magnetoresistance and high annealing stability in CoFeB/MgO/CoFeB magnetic tunnel junctions with synthetic pinned layer

    Y. M. Lee;J. Hayakawa;S. Ikeda;F. Matsukura

  • Current-induced effective field in perpendicularly magnetized Ta/CoFeB/MgO wire

    T. Suzuki;S. Fukami;N. Ishiwata;M. Yamanouchi

  • MgO/CoFeB/Ta/CoFeB/MgO Recording Structure in Magnetic Tunnel Junctions With Perpendicular Easy Axis

    Hideo Sato;Michihiko Yamanouchi;Shoji Ikeda;Shunsuke Fukami

  • Current-Induced Magnetization Switching in MgO Barrier Based Magnetic Tunnel Junctions with CoFeB/Ru/CoFeB Synthetic Ferrimagnetic Free Layer

    Jun Hayakawa;Jun Hayakawa;Shoji Ikeda;Young Min Lee;Ryutaro Sasaki

  • A 32-Mb SPRAM With 2T1R Memory Cell, Localized Bi-Directional Write Driver and '1'/'0' Dual-Array Equalized Reference Scheme

    Riichiro Takemura;Takayuki Kawahara;Katsuya Miura;Hiroyuki Yamamoto

  • Domain Structure in CoFeB Thin Films With Perpendicular Magnetic Anisotropy

    Michihiko Yamanouchi;Albrecht Jander;Pallavi Dhagat;Shoji Ikeda

Frequent Co-Authors

Hideo Ohno
Hideo Ohno Tohoku University
Fumihiro Matsukura
Fumihiro Matsukura Tohoku University
Tetsuo Endoh
Tetsuo Endoh Tohoku University
Takahiro Hanyu
Takahiro Hanyu Tohoku University
Takayuki Kawahara
Takayuki Kawahara Tokyo University of Science
Mikihiko Oogane
Mikihiko Oogane Tohoku University
Kazuhiro Hono
Kazuhiro Hono National Institute for Materials Science
Yuichi Ikuhara
Yuichi Ikuhara University of Tokyo
Mitsumasa Koyanagi
Mitsumasa Koyanagi Tohoku University
Tadakatsu Ohkubo
Tadakatsu Ohkubo National Institute for Materials Science

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