His primary areas of investigation include Condensed matter physics, Tunnel magnetoresistance, Annealing, Magnetization and Ferromagnetism. His Condensed matter physics study incorporates themes from Magnetic anisotropy, Perpendicular anisotropy, Thermal stability and Tantalum. He has included themes like Critical current, Magnetic tunnelling and Spin-transfer torque in his Perpendicular anisotropy study.
His Tunnel magnetoresistance research includes themes of Ferrimagnetism and Magnetoresistance. The various areas that Shoji Ikeda examines in his Annealing study include Crystallization and Transmission electron microscopy. Superparamagnetism is closely connected to Coercivity in his research, which is encompassed under the umbrella topic of Magnetization.
His scientific interests lie mostly in Condensed matter physics, Tunnel magnetoresistance, Annealing, Magnetic anisotropy and Magnetization. When carried out as part of a general Condensed matter physics research project, his work on Ferromagnetism is frequently linked to work in Perpendicular, therefore connecting diverse disciplines of study. The concepts of his Tunnel magnetoresistance study are interwoven with issues in Spin-transfer torque, Crystallization, Optoelectronics, Magnetoresistive random-access memory and Iron alloys.
His Spin-transfer torque study which covers Electrical engineering that intersects with Electronic engineering. In his work, Transmission electron microscopy is strongly intertwined with Amorphous solid, which is a subfield of Annealing. His work investigates the relationship between Magnetic anisotropy and topics such as Magnetic domain that intersect with problems in Magnetic particle inspection and Domain wall.
His main research concerns Condensed matter physics, Tunnel magnetoresistance, Magnetic anisotropy, Perpendicular and Thermal stability. Shoji Ikeda specializes in Condensed matter physics, namely Damping constant. He interconnects Barrier layer, Optoelectronics, Magnetic memory and Annealing in the investigation of issues within Tunnel magnetoresistance.
Magnetic anisotropy is a subfield of Magnetization that he tackles. His biological study spans a wide range of topics, including Tantalum and Perpendicular anisotropy. His research investigates the connection between Perpendicular anisotropy and topics such as Cobalt compounds that intersect with issues in Perpendicular magnetic anisotropy.
Shoji Ikeda mostly deals with Magnetic anisotropy, Condensed matter physics, Tunnel magnetoresistance, Non-volatile memory and Perpendicular. His Magnetic anisotropy research incorporates elements of Thermal stability and Tantalum. His studies in Tantalum integrate themes in fields like Perpendicular magnetic anisotropy, Perpendicular anisotropy, Critical current, Magnetic tunnelling and Cobalt compounds.
Specifically, his work in Condensed matter physics is concerned with the study of Band gap. He has researched Tunnel magnetoresistance in several fields, including Annealing, Optoelectronics, Quantum tunnelling, Transmission electron microscopy and Nuclear magnetic resonance. His Non-volatile memory research integrates issues from Field-programmable gate array, Spintronics, Magnetoresistive random-access memory and CMOS.
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A perpendicular-anisotropy CoFeB–MgO magnetic tunnel junction
S. Ikeda;K. Miura;K. Miura;H. Yamamoto;H. Yamamoto;K. Mizunuma.
Nature Materials (2010)
Tunnel magnetoresistance of 604% at 300K by suppression of Ta diffusion in CoFeB∕MgO∕CoFeB pseudo-spin-valves annealed at high temperature
S. Ikeda;J. Hayakawa;Y. Ashizawa;Y. M. Lee.
Applied Physics Letters (2008)
Magnetic Tunnel Junctions for Spintronic Memories and Beyond
S. Ikeda;J. Hayakawa;Young Min Lee;F. Matsukura.
IEEE Transactions on Electron Devices (2007)
Electric-field effects on thickness dependent magnetic anisotropy of sputtered MgO/Co40Fe40B20/Ta structures
M. Endo;S. Kanai;S. Ikeda;F. Matsukura.
Applied Physics Letters (2010)
Fabrication of a Nonvolatile Full Adder Based on Logic-in-Memory Architecture Using Magnetic Tunnel Junctions
Shoun Matsunaga;Jun Hayakawa;Shoji Ikeda;Katsuya Miura;Katsuya Miura.
Applied Physics Express (2008)
Effect of electrode composition on the tunnel magnetoresistance of pseudo-spin-valve magnetic tunnel junction with a MgO tunnel barrier
Y. M. Lee;J. Hayakawa;S. Ikeda;F. Matsukura.
Applied Physics Letters (2007)
Electric field-induced magnetization reversal in a perpendicular-anisotropy CoFeB-MgO magnetic tunnel junction
S. Kanai;M. Yamanouchi;S. Ikeda;Y. Nakatani.
Applied Physics Letters (2012)
Dependence of Giant Tunnel Magnetoresistance of Sputtered CoFeB/MgO/CoFeB Magnetic Tunnel Junctions on MgO Barrier Thickness and Annealing Temperature
Jun Hayakawa;Jun Hayakawa;Shoji Ikeda;Fumihiro Matsukura;Hiromasa Takahashi;Hiromasa Takahashi.
Japanese Journal of Applied Physics (2005)
2Mb Spin-Transfer Torque RAM (SPRAM) with Bit-by-Bit Bidirectional Current Write and Parallelizing-Direction Current Read
T. Kawahara;R. Takemura;K. Miura;J. Hayakawa.
international solid-state circuits conference (2007)
Effect of high annealing temperature on giant tunnel magnetoresistance ratio of CoFeB∕MgO∕CoFeB magnetic tunnel junctions
J. Hayakawa;S. Ikeda;Y. M. Lee;F. Matsukura.
Applied Physics Letters (2006)
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