2023 - Research.com Materials Science in Japan Leader Award
2018 - IEEE Fellow For contributions to materials and device design for spintronics
Hideo Ohno mainly focuses on Condensed matter physics, Ferromagnetism, Magnetic semiconductor, Magnetization and Tunnel magnetoresistance. Hideo Ohno works on Condensed matter physics which deals in particular with Spintronics. His research in Ferromagnetism intersects with topics in Magnetism, Electrical resistivity and conductivity, Transition temperature, Giant magnetoresistance and Antiferromagnetism.
The study incorporates disciplines such as Molecular beam epitaxy, Curie temperature, Paramagnetism, Hall effect and Remanence in addition to Magnetic semiconductor. His Magnetization research integrates issues from Electric field and Nuclear magnetic resonance. Hideo Ohno has included themes like Spin-transfer torque, Ferrimagnetism and Voltage in his Tunnel magnetoresistance study.
Hideo Ohno focuses on Condensed matter physics, Optoelectronics, Ferromagnetism, Magnetization and Tunnel magnetoresistance. His studies deal with areas such as Magnetic anisotropy, Magnetic field and Semiconductor as well as Condensed matter physics. His studies in Magnetic anisotropy integrate themes in fields like Nuclear magnetic resonance and Anisotropy.
In his study, Analytical chemistry is inextricably linked to Molecular beam epitaxy, which falls within the broad field of Optoelectronics. His Ferromagnetism study integrates concerns from other disciplines, such as Hall effect, Antiferromagnetism and Magnetoresistance. His work carried out in the field of Tunnel magnetoresistance brings together such families of science as Spin-transfer torque, Annealing and CMOS.
Hideo Ohno spends much of his time researching Condensed matter physics, Spintronics, Magnetization, Magnetic anisotropy and Tunnel magnetoresistance. As a member of one scientific family, Hideo Ohno mostly works in the field of Condensed matter physics, focusing on Anisotropy and, on occasion, Magnetoresistance. His work deals with themes such as Current density and Stacking, which intersect with Magnetization.
His Magnetic anisotropy research includes elements of Magnetic domain, Electric field, Modulation, Layer and Ferromagnetic resonance. His Tunnel magnetoresistance research incorporates themes from Nanoscopic scale, Annealing and Thermal stability. His Ferromagnetism research is multidisciplinary, relying on both Point reflection and Spin–orbit interaction.
Condensed matter physics, Spintronics, Magnetic anisotropy, Magnetization and Ferromagnetism are his primary areas of study. His Condensed matter physics study incorporates themes from Electric field, Magnetic field and Anisotropy. The concepts of his Spintronics study are interwoven with issues in Spin-transfer torque, Artificial neural network, Neuromorphic engineering, Magnetoresistive random-access memory and Torque.
The Magnetic anisotropy study combines topics in areas such as Layer, Spontaneous magnetization and Ferromagnetic resonance. His study in Magnetization is interdisciplinary in nature, drawing from both Spin Hall effect, Current density, Nanoscopic scale and Stacking. His Ferromagnetism study combines topics in areas such as Magnetometer, Point reflection and Demagnetizing field.
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Zener Model Description of Ferromagnetism in Zinc-Blende Magnetic Semiconductors
T. Dietl;H. Ohno;F. Matsukura;J. Cibert.
Making Nonmagnetic Semiconductors Ferromagnetic
Thin film transistor and matrix display device
Masashi Kawasaki;Hideo Ohno;Kazuki Kobayashi;Ikuo Sakono.
Semiconductor device with an active layer containing zinc oxide, manufacturing method, and electronic device
Toshinori Sugihara;Hideo Ohno;Masashi Kawasaki.
A perpendicular-anisotropy CoFeB–MgO magnetic tunnel junction
S. Ikeda;K. Miura;K. Miura;H. Yamamoto;H. Yamamoto;K. Mizunuma.
Nature Materials (2010)
Transistor and semiconductor device
Masashi Tsubuku;Takayuki Inoue;Suzunosuke Hiraishi;Erumu Kikuchi.
Electrical spin injection in a ferromagnetic semiconductor heterostructure
Y. Ohno;D. K. Young;B. Beschoten;Fumihiro Matsukura.
(Ga,Mn)As: A new diluted magnetic semiconductor based on GaAs
H. Ohno;A. Shen;F. Matsukura;A. Oiwa.
Applied Physics Letters (1996)
Repeated temperature modulation epitaxy for p-type doping and light-emitting diode based on ZnO
Atsushi Tsukazaki;Akira Ohtomo;Takeyoshi Onuma;Makoto Ohtani.
Nature Materials (2004)
Electric-field control of ferromagnetism
H. Ohno;D. Chiba;F. Matsukura;T. Omiya.
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