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Materials Science
Japan
2022

D-Index & Metrics

Materials Science

D-Index
116
Citations
103089
World Ranking
557
National Ranking
17

Physics

D-Index
118
Citations
104875
World Ranking
858
National Ranking
19

Research.com Recognitions

  • 2022 - Research.com Materials Science in Japan Leader Award
  • 2018 - IEEE Fellow For contributions to materials and device design for spintronics

Overview

Hideo Ohno is affiliated with Tohoku University in Japan and has contributed extensively to the fields of physics, engineering, and materials science. Their research spans atomic and molecular physics, optics, electrical and electronic engineering, materials chemistry, condensed matter physics, and electronic, optical, and magnetic materials. The scientist's work features prominently in studies related to magnetic properties of thin films, physics of superconductivity and magnetism, ferroelectric and negative capacitance devices, advanced memory and neural computing, ZnO doping and properties, quantum and electron transport phenomena, and theoretical and computational physics.

Ohno has published multiple significant papers, including:

  • Coherent antiferromagnetic spintronics, 2023, Nature Materials
  • Chiral-spin rotation of non-collinear antiferromagnet by spin-orbit torque, 2021, Nature Materials
  • Nanosecond Random Telegraph Noise in In-Plane Magnetic Tunnel Junctions, 2021, Physical Review Letters
  • Memristive control of mutual spin Hall nano-oscillator synchronization for neuromorphic computing, 2021, Nature Materials
  • A Full-Stack View of Probabilistic Computing With p-Bits: Devices, Architectures, and Algorithms, 2023, IEEE Journal on Exploratory Solid-State Computational Devices and Circuits

Frequent collaborators include Shunsuke Fukami, Shun Kanai, Yutaro Takeuchi, Ju-Young Yoon, and Junta Igarashi, with collaboration counts ranging from 13 to 73 joint publications.

The main publication venues for this scientist are:

  • Applied Physics Letters
  • arXiv (Cornell University)
  • Physical review. B./Physical review. B
  • Nature Communications
  • Nature Materials

Ohno was recognized as an IEEE Fellow in 2018 for contributions to materials and device design for spintronics.

Best Publications

  • Zener Model Description of Ferromagnetism in Zinc-Blende Magnetic Semiconductors

    T. Dietl;H. Ohno;F. Matsukura;J. Cibert

  • Making Nonmagnetic Semiconductors Ferromagnetic

    H. Ohno

  • A perpendicular-anisotropy CoFeB–MgO magnetic tunnel junction

    S. Ikeda;K. Miura;K. Miura;H. Yamamoto;H. Yamamoto;K. Mizunuma

  • Thin film transistor and matrix display device

    Masashi Kawasaki;Hideo Ohno;Kazuki Kobayashi;Ikuo Sakono

  • Transistor and semiconductor device

    Masashi Kawasaki;Hideo Ohno

  • Electrical spin injection in a ferromagnetic semiconductor heterostructure

    Y. Ohno;D. K. Young;B. Beschoten;Fumihiro Matsukura

  • (Ga,Mn)As: A new diluted magnetic semiconductor based on GaAs

    H. Ohno;A. Shen;F. Matsukura;A. Oiwa

  • Electric-field control of ferromagnetism

    H. Ohno;D. Chiba;F. Matsukura;T. Omiya

  • Repeated temperature modulation epitaxy for p-type doping and light-emitting diode based on ZnO

    Atsushi Tsukazaki;Akira Ohtomo;Takeyoshi Onuma;Makoto Ohtani

  • Tunnel magnetoresistance of 604% at 300K by suppression of Ta diffusion in CoFeB∕MgO∕CoFeB pseudo-spin-valves annealed at high temperature

    S. Ikeda;J. Hayakawa;Y. Ashizawa;Y. M. Lee

  • Hole-mediated ferromagnetism in tetrahedrally coordinated semiconductors

    T. Dietl;T. Dietl;H. Ohno;F. Matsukura

  • Semiconductor device, manufacturing method thereof, and electronic device

    Toshinori Sugihara;Hideo Ohno;Masashi Kawasaki

  • Magnetotransport properties of p-type (In,Mn)As diluted magnetic III-V semiconductors.

    H. Ohno;H. Ohno;H. Munekata;T. Penney;S. von Molnár

  • Transport properties and origin of ferromagnetism in (Ga, Mn)As

    F. Matsukura;H. Ohno;A. Shen;Y. Sugawara

  • Diluted magnetic III-V semiconductors

    H. Munekata;H. Ohno;S. von Molnar;Armin Segmüller

  • Current-induced torques in magnetic materials

    Arne Brataas;Andrew D. Kent;Hideo Ohno

  • Control of magnetism by electric fields

    Fumihiro Matsukura;Yoshinori Tokura;Hideo Ohno

  • Spintronics based random access memory: a review

    Sabpreet Bhatti;Rachid Sbiaa;Atsufumi Hirohata;Hideo Ohno

  • Properties of ferromagnetic III–V semiconductors

    Hideo Ohno

  • Magnetization switching by spin–orbit torque in an antiferromagnet–ferromagnet bilayer system

    Shunsuke Fukami;Chaoliang Zhang;Samik DuttaGupta;Aleksandr Kurenkov

  • Semiconductor device, its manufacturing method, and electronic device

    Toshinori Sugihara;Hideo Ohno;Masashi Kawasaki

Frequent Co-Authors

Fumihiro Matsukura
Fumihiro Matsukura Tohoku University
Shoji Ikeda
Shoji Ikeda Tohoku University
Tetsuo Endoh
Tetsuo Endoh Tohoku University
Takahiro Hanyu
Takahiro Hanyu Tohoku University
Tomasz Dietl
Tomasz Dietl Tohoku University
Hideki Hasegawa
Hideki Hasegawa Hokkaido University
Masashi Kawasaki
Masashi Kawasaki University of Tokyo
Akira Ohtomo
Akira Ohtomo Tokyo Institute of Technology
Takayuki Kawahara
Takayuki Kawahara Tokyo University of Science
Lester F. Eastman
Lester F. Eastman Cornell University

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