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Materials Science
Japan
2022

D-Index & Metrics

Discipline name D-Index World Ranking Current World Ranking National Ranking Current National Ranking Publications Citations
Materials Science 116 557 530 17 17 963 103089
Physics 118 858 813 19 19 984 104875

Hideo Ohno publications per year

The chart shows the history of publications by Hideo Ohno between 1966 and 2025, highlighting the no. of papers published in each year and offering an overview of the publication velocity of this scholar. Hideo Ohno published across 60 years, from 1966 to 2025, averaging 18 papers a year. Output peaked at 57 publications in 2014. 24 of the 1,080 publications appeared in the last two years.

No. of publications
10 20 30 40 50
Bar chart. Horizontal axis: year, 1966 to 2025. Vertical axis: number of publications, 0 to 57. Peak 57 publications in 2014. 1966: 1 publication 1967: 1 publication 1968: 2 publications 1969: 0 publications 1970: 0 publications 1971: 2 publications 1972: 0 publications 1973: 0 publications 1974: 0 publications 1975: 0 publications 1976: 0 publications 1977: 0 publications 1978: 0 publications 1979: 1 publication 1980: 6 publications 1981: 8 publications 1982: 6 publications 1983: 10 publications 1984: 13 publications 1985: 14 publications 1986: 8 publications 1987: 7 publications 1988: 20 publications 1989: 10 publications 1990: 14 publications 1991: 7 publications 1992: 5 publications 1993: 7 publications 1994: 7 publications 1995: 5 publications 1996: 3 publications 1997: 14 publications 1998: 30 publications 1999: 28 publications 2000: 27 publications 2001: 38 publications 2002: 28 publications 2003: 23 publications 2004: 25 publications 2005: 26 publications 2006: 34 publications 2007: 39 publications 2008: 39 publications 2009: 29 publications 2010: 47 publications 2011: 34 publications 2012: 45 publications 2013: 53 publications 2014: 57 publications 2015: 39 publications 2016: 42 publications 2017: 49 publications 2018: 34 publications 2019: 31 publications 2020: 26 publications 2021: 35 publications 2022: 11 publications 2023: 16 publications 2024: 16 publications 2025: 8 publications
1966 2025

1,080 publications in total across all disciplines

View publications per year as a table
Hideo Ohno: publications per year, 1966 to 2025
Year Publications
1966 1
1967 1
1968 2
1969 0
1970 0
1971 2
1972 0
1973 0
1974 0
1975 0
1976 0
1977 0
1978 0
1979 1
1980 6
1981 8
1982 6
1983 10
1984 13
1985 14
1986 8
1987 7
1988 20
1989 10
1990 14
1991 7
1992 5
1993 7
1994 7
1995 5
1996 3
1997 14
1998 30
1999 28
2000 27
2001 38
2002 28
2003 23
2004 25
2005 26
2006 34
2007 39
2008 39
2009 29
2010 47
2011 34
2012 45
2013 53
2014 57
2015 39
2016 42
2017 49
2018 34
2019 31
2020 26
2021 35
2022 11
2023 16
2024 16
2025 8
Total 1,080
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Hideo Ohno publication distribution in Materials Science in 2026

The chart shows the distribution of publications by all Research.com ranked scientists in the field of Materials Science in 2026. The highlighted bar marks where Hideo Ohno sits on this spectrum.

No. of scientists
200 400 600 800
Bar chart with 57 bars. Horizontal axis: publications, 50–69 to 1,163+. Vertical axis: number of scientists, 0 to 891. Most scientists, 891, have 190–209 publications. The last bar groups every scientist with 1,163 publications or more. The highlighted bar, 950–969 publications, is where this scientist sits. 50–69 publications: 28 scientists 70–89 publications: 152 scientists 90–109 publications: 356 scientists 110–129 publications: 487 scientists 130–149 publications: 723 scientists 150–169 publications: 835 scientists 170–189 publications: 850 scientists 190–209 publications: 891 scientists 210–229 publications: 862 scientists 230–249 publications: 766 scientists 250–269 publications: 726 scientists 270–289 publications: 665 scientists 290–309 publications: 593 scientists 310–329 publications: 537 scientists 330–349 publications: 477 scientists 350–369 publications: 440 scientists 370–389 publications: 356 scientists 390–409 publications: 321 scientists 410–429 publications: 256 scientists 430–449 publications: 246 scientists 450–469 publications: 216 scientists 470–489 publications: 212 scientists 490–509 publications: 174 scientists 510–529 publications: 194 scientists 530–549 publications: 162 scientists 550–569 publications: 131 scientists 570–589 publications: 111 scientists 590–609 publications: 103 scientists 610–629 publications: 99 scientists 630–649 publications: 77 scientists 650–669 publications: 92 scientists 670–689 publications: 56 scientists 690–709 publications: 53 scientists 710–729 publications: 53 scientists 730–749 publications: 38 scientists 750–769 publications: 52 scientists 770–789 publications: 43 scientists 790–809 publications: 38 scientists 810–829 publications: 34 scientists 830–849 publications: 25 scientists 850–869 publications: 18 scientists 870–889 publications: 20 scientists 890–909 publications: 24 scientists 910–929 publications: 27 scientists 930–949 publications: 20 scientists 950–969 publications: 17 scientists 970–989 publications: 10 scientists 990–1,009 publications: 16 scientists 1,010–1,029 publications: 13 scientists 1,030–1,049 publications: 12 scientists 1,050–1,069 publications: 9 scientists 1,070–1,089 publications: 8 scientists 1,090–1,109 publications: 7 scientists 1,110–1,129 publications: 9 scientists 1,130–1,149 publications: 2 scientists 1,150–1,162 publications: 5 scientists 1,163+ publications: 100 scientists
50–69 publications 1,163+

This scientist: 963 publications — 98th percentile

98% of scientists in this discipline score the same or lower.

The last bar groups every scientist with 1,163 publications or more.

View publications distribution as a table
Number of Materials Science scientists by publication count, Research.com 2026 ranking edition. Based on 12,847 ranked scientists.
Publications Scientists This scientist
50–69 28
70–89 152
90–109 356
110–129 487
130–149 723
150–169 835
170–189 850
190–209 891
210–229 862
230–249 766
250–269 726
270–289 665
290–309 593
310–329 537
330–349 477
350–369 440
370–389 356
390–409 321
410–429 256
430–449 246
450–469 216
470–489 212
490–509 174
510–529 194
530–549 162
550–569 131
570–589 111
590–609 103
610–629 99
630–649 77
650–669 92
670–689 56
690–709 53
710–729 53
730–749 38
750–769 52
770–789 43
790–809 38
810–829 34
830–849 25
850–869 18
870–889 20
890–909 24
910–929 27
930–949 20
950–969 17 963
970–989 10
990–1,009 16
1,010–1,029 13
1,030–1,049 12
1,050–1,069 9
1,070–1,089 8
1,090–1,109 7
1,110–1,129 9
1,130–1,149 2
1,150–1,162 5
1,163+ 100
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Hideo Ohno D-index placement in Materials Science in 2026

The chart shows the D-index (discipline H-index) distribution of Materials Science scientists ranked by Research.com in 2026. The highlighted bar marks where Hideo Ohno sits on this spectrum.

No. of scientists
200 400 600
Bar chart with 64 bars. Horizontal axis: D-Index, 40–41 to 165+. Vertical axis: number of scientists, 0 to 667. Most scientists, 667, have 52–53 D-Index. The last bar groups every scientist with 165 D-Index or more. The highlighted bar, 116–117 D-Index, is where this scientist sits. 40–41 D-Index: 211 scientists 42–43 D-Index: 450 scientists 44–45 D-Index: 612 scientists 46–47 D-Index: 612 scientists 48–49 D-Index: 598 scientists 50–51 D-Index: 657 scientists 52–53 D-Index: 667 scientists 54–55 D-Index: 621 scientists 56–57 D-Index: 597 scientists 58–59 D-Index: 610 scientists 60–61 D-Index: 587 scientists 62–63 D-Index: 606 scientists 64–65 D-Index: 533 scientists 66–67 D-Index: 490 scientists 68–69 D-Index: 469 scientists 70–71 D-Index: 378 scientists 72–73 D-Index: 421 scientists 74–75 D-Index: 359 scientists 76–77 D-Index: 323 scientists 78–79 D-Index: 299 scientists 80–81 D-Index: 230 scientists 82–83 D-Index: 210 scientists 84–85 D-Index: 195 scientists 86–87 D-Index: 203 scientists 88–89 D-Index: 175 scientists 90–91 D-Index: 175 scientists 92–93 D-Index: 142 scientists 94–95 D-Index: 121 scientists 96–97 D-Index: 117 scientists 98–99 D-Index: 107 scientists 100–101 D-Index: 88 scientists 102–103 D-Index: 85 scientists 104–105 D-Index: 68 scientists 106–107 D-Index: 62 scientists 108–109 D-Index: 57 scientists 110–111 D-Index: 45 scientists 112–113 D-Index: 49 scientists 114–115 D-Index: 50 scientists 116–117 D-Index: 34 scientists 118–119 D-Index: 38 scientists 120–121 D-Index: 37 scientists 122–123 D-Index: 29 scientists 124–125 D-Index: 28 scientists 126–127 D-Index: 24 scientists 128–129 D-Index: 33 scientists 130–131 D-Index: 28 scientists 132–133 D-Index: 21 scientists 134–135 D-Index: 20 scientists 136–137 D-Index: 23 scientists 138–139 D-Index: 17 scientists 140–141 D-Index: 12 scientists 142–143 D-Index: 17 scientists 144–145 D-Index: 21 scientists 146–147 D-Index: 13 scientists 148–149 D-Index: 11 scientists 150–151 D-Index: 14 scientists 152–153 D-Index: 13 scientists 154–155 D-Index: 9 scientists 156–157 D-Index: 10 scientists 158–159 D-Index: 7 scientists 160–161 D-Index: 4 scientists 162–163 D-Index: 4 scientists 164 D-Index: 3 scientists 165+ D-Index: 98 scientists
40–41 D-Index 165+

This scientist: 116 D-Index — 96th percentile

96% of scientists in this discipline score the same or lower.

The last bar groups every scientist with 165 D-Index or more.

View D-Index distribution as a table
Number of Materials Science scientists by D-index, Research.com 2026 ranking edition. Based on 12,847 ranked scientists.
D-Index Scientists This scientist
40–41 211
42–43 450
44–45 612
46–47 612
48–49 598
50–51 657
52–53 667
54–55 621
56–57 597
58–59 610
60–61 587
62–63 606
64–65 533
66–67 490
68–69 469
70–71 378
72–73 421
74–75 359
76–77 323
78–79 299
80–81 230
82–83 210
84–85 195
86–87 203
88–89 175
90–91 175
92–93 142
94–95 121
96–97 117
98–99 107
100–101 88
102–103 85
104–105 68
106–107 62
108–109 57
110–111 45
112–113 49
114–115 50
116–117 34 116
118–119 38
120–121 37
122–123 29
124–125 28
126–127 24
128–129 33
130–131 28
132–133 21
134–135 20
136–137 23
138–139 17
140–141 12
142–143 17
144–145 21
146–147 13
148–149 11
150–151 14
152–153 13
154–155 9
156–157 10
158–159 7
160–161 4
162–163 4
164 3
165+ 98
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Research.com Recognitions

  • 2022 - Research.com Materials Science in Japan Leader Award
  • 2018 - IEEE Fellow For contributions to materials and device design for spintronics

Overview

Hideo Ohno is affiliated with Tohoku University in Japan and has contributed extensively to the fields of physics, engineering, and materials science. Their research spans atomic and molecular physics, optics, electrical and electronic engineering, materials chemistry, condensed matter physics, and electronic, optical, and magnetic materials. The scientist's work features prominently in studies related to magnetic properties of thin films, physics of superconductivity and magnetism, ferroelectric and negative capacitance devices, advanced memory and neural computing, ZnO doping and properties, quantum and electron transport phenomena, and theoretical and computational physics.

Ohno has published multiple significant papers, including:

  • Coherent antiferromagnetic spintronics, 2023, Nature Materials
  • Chiral-spin rotation of non-collinear antiferromagnet by spin-orbit torque, 2021, Nature Materials
  • Nanosecond Random Telegraph Noise in In-Plane Magnetic Tunnel Junctions, 2021, Physical Review Letters
  • Memristive control of mutual spin Hall nano-oscillator synchronization for neuromorphic computing, 2021, Nature Materials
  • A Full-Stack View of Probabilistic Computing With p-Bits: Devices, Architectures, and Algorithms, 2023, IEEE Journal on Exploratory Solid-State Computational Devices and Circuits

Frequent collaborators include Shunsuke Fukami, Shun Kanai, Yutaro Takeuchi, Ju-Young Yoon, and Junta Igarashi, with collaboration counts ranging from 13 to 73 joint publications.

The main publication venues for this scientist are:

  • Applied Physics Letters
  • arXiv (Cornell University)
  • Physical review. B./Physical review. B
  • Nature Communications
  • Nature Materials

Ohno was recognized as an IEEE Fellow in 2018 for contributions to materials and device design for spintronics.

Best Publications

  • Zener Model Description of Ferromagnetism in Zinc-Blende Magnetic Semiconductors

    T. Dietl;H. Ohno;F. Matsukura;J. Cibert

  • Making Nonmagnetic Semiconductors Ferromagnetic

    H. Ohno

  • A perpendicular-anisotropy CoFeB–MgO magnetic tunnel junction

    S. Ikeda;K. Miura;K. Miura;H. Yamamoto;H. Yamamoto;K. Mizunuma

  • Thin film transistor and matrix display device

    Masashi Kawasaki;Hideo Ohno;Kazuki Kobayashi;Ikuo Sakono

  • Transistor and semiconductor device

    Masashi Kawasaki;Hideo Ohno

  • Electrical spin injection in a ferromagnetic semiconductor heterostructure

    Y. Ohno;D. K. Young;B. Beschoten;Fumihiro Matsukura

  • (Ga,Mn)As: A new diluted magnetic semiconductor based on GaAs

    H. Ohno;A. Shen;F. Matsukura;A. Oiwa

  • Electric-field control of ferromagnetism

    H. Ohno;D. Chiba;F. Matsukura;T. Omiya

  • Repeated temperature modulation epitaxy for p-type doping and light-emitting diode based on ZnO

    Atsushi Tsukazaki;Akira Ohtomo;Takeyoshi Onuma;Makoto Ohtani

  • Tunnel magnetoresistance of 604% at 300K by suppression of Ta diffusion in CoFeB∕MgO∕CoFeB pseudo-spin-valves annealed at high temperature

    S. Ikeda;J. Hayakawa;Y. Ashizawa;Y. M. Lee

  • Hole-mediated ferromagnetism in tetrahedrally coordinated semiconductors

    T. Dietl;T. Dietl;H. Ohno;F. Matsukura

  • Semiconductor device, manufacturing method thereof, and electronic device

    Toshinori Sugihara;Hideo Ohno;Masashi Kawasaki

  • Magnetotransport properties of p-type (In,Mn)As diluted magnetic III-V semiconductors.

    H. Ohno;H. Ohno;H. Munekata;T. Penney;S. von Molnár

  • Transport properties and origin of ferromagnetism in (Ga, Mn)As

    F. Matsukura;H. Ohno;A. Shen;Y. Sugawara

  • Diluted magnetic III-V semiconductors

    H. Munekata;H. Ohno;S. von Molnar;Armin Segmüller

  • Current-induced torques in magnetic materials

    Arne Brataas;Andrew D. Kent;Hideo Ohno

  • Control of magnetism by electric fields

    Fumihiro Matsukura;Yoshinori Tokura;Hideo Ohno

  • Spintronics based random access memory: a review

    Sabpreet Bhatti;Rachid Sbiaa;Atsufumi Hirohata;Hideo Ohno

  • Properties of ferromagnetic III–V semiconductors

    Hideo Ohno

  • Magnetization switching by spin–orbit torque in an antiferromagnet–ferromagnet bilayer system

    Shunsuke Fukami;Chaoliang Zhang;Samik DuttaGupta;Aleksandr Kurenkov

  • Semiconductor device, its manufacturing method, and electronic device

    Toshinori Sugihara;Hideo Ohno;Masashi Kawasaki

Frequent Co-Authors

Fumihiro Matsukura
Fumihiro Matsukura Tohoku University
Shoji Ikeda
Shoji Ikeda Tohoku University
Tetsuo Endoh
Tetsuo Endoh Tohoku University
Takahiro Hanyu
Takahiro Hanyu Tohoku University
Tomasz Dietl
Tomasz Dietl Tohoku University
Hideki Hasegawa
Hideki Hasegawa Hokkaido University
Masashi Kawasaki
Masashi Kawasaki University of Tokyo
Akira Ohtomo
Akira Ohtomo Tokyo Institute of Technology
Takayuki Kawahara
Takayuki Kawahara Tokyo University of Science
Lester F. Eastman
Lester F. Eastman Cornell University

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