World's Best Scientists 2026 revealed!
Takahiro Hanyu

Takahiro Hanyu

D-Index & Metrics

Electronics and Electrical Engineering

D-Index
31
Citations
5994
World Ranking
6464
National Ranking
281

Takahiro Hanyu publication distribution in Electronics and Electrical Engineering in 2026

The chart shows the distribution of publications by all Research.com ranked scientists in the field of Electronics and Electrical Engineering in 2026. The highlighted bar marks where Takahiro Hanyu sits on this spectrum.

34–53 publications: 24 scientists 54–73 publications: 52 scientists 74–93 publications: 114 scientists 94–113 publications: 203 scientists 114–133 publications: 269 scientists 134–153 publications: 355 scientists 154–173 publications: 403 scientists 174–193 publications: 445 scientists 194–213 publications: 430 scientists 214–233 publications: 431 scientists 234–253 publications: 399 scientists 254–273 publications: 366 scientists 274–293 publications: 335 scientists 294–313 publications: 300 scientists 314–333 publications: 276 scientists 334–353 publications: 250 scientists 354–373 publications: 214 scientists 374–393 publications: 187 scientists 394–413 publications: 152 scientists 414–433 publications: 169 scientists 434–453 publications: 147 scientists 454–473 publications: 111 scientists 474–493 publications: 117 scientists 494–513 publications: 103 scientists 514–533 publications: 99 scientists 534–553 publications: 92 scientists 554–573 publications: 75 scientists 574–593 publications: 58 scientists 594–613 publications: 69 scientists 614–633 publications: 50 scientists 634–653 publications: 62 scientists 654–673 publications: 54 scientists 674–693 publications: 44 scientists 694–713 publications: 37 scientists 714–733 publications: 28 scientists 734–753 publications: 26 scientists 754–773 publications: 26 scientists 774–793 publications: 19 scientists 794–813 publications: 23 scientists 814–833 publications: 20 scientists 834–853 publications: 16 scientists 854–873 publications: 20 scientists 874–893 publications: 11 scientists 894–913 publications: 11 scientists 914–933 publications: 16 scientists 934–953 publications: 13 scientists 954–973 publications: 10 scientists 974–993 publications: 11 scientists 994–1,013 publications: 9 scientists 1,014–1,033 publications: 9 scientists 1,034–1,053 publications: 10 scientists 1,054–1,064 publications: 6 scientists 1,065+ publications: 99 scientists
34 publications 1,065+

This scientist: 430 publications — 78th percentile

78% of scientists in this discipline score the same or lower.

The last bar groups every scientist with 1,065 publications or more.

Takahiro Hanyu D-index placement in Electronics and Electrical Engineering in 2026

The chart shows the D-index (discipline H-index) distribution of Electronics and Electrical Engineering scientists ranked by Research.com in 2026. The highlighted bar marks where Takahiro Hanyu sits on this spectrum.

30 D-Index: 178 scientists 31 D-Index: 257 scientists 32 D-Index: 263 scientists 33 D-Index: 262 scientists 34 D-Index: 244 scientists 35 D-Index: 236 scientists 36 D-Index: 211 scientists 37 D-Index: 220 scientists 38 D-Index: 214 scientists 39 D-Index: 214 scientists 40 D-Index: 205 scientists 41 D-Index: 187 scientists 42 D-Index: 194 scientists 43 D-Index: 201 scientists 44 D-Index: 155 scientists 45 D-Index: 189 scientists 46 D-Index: 148 scientists 47 D-Index: 160 scientists 48 D-Index: 134 scientists 49 D-Index: 130 scientists 50 D-Index: 141 scientists 51 D-Index: 156 scientists 52 D-Index: 108 scientists 53 D-Index: 130 scientists 54 D-Index: 112 scientists 55 D-Index: 97 scientists 56 D-Index: 111 scientists 57 D-Index: 102 scientists 58 D-Index: 108 scientists 59 D-Index: 120 scientists 60 D-Index: 103 scientists 61 D-Index: 93 scientists 62 D-Index: 92 scientists 63 D-Index: 74 scientists 64 D-Index: 77 scientists 65 D-Index: 73 scientists 66 D-Index: 64 scientists 67 D-Index: 69 scientists 68 D-Index: 60 scientists 69 D-Index: 39 scientists 70 D-Index: 57 scientists 71 D-Index: 59 scientists 72 D-Index: 46 scientists 73 D-Index: 49 scientists 74 D-Index: 38 scientists 75 D-Index: 35 scientists 76 D-Index: 32 scientists 77 D-Index: 35 scientists 78 D-Index: 31 scientists 79 D-Index: 22 scientists 80 D-Index: 34 scientists 81 D-Index: 31 scientists 82 D-Index: 34 scientists 83 D-Index: 23 scientists 84 D-Index: 18 scientists 85 D-Index: 30 scientists 86 D-Index: 19 scientists 87 D-Index: 19 scientists 88 D-Index: 20 scientists 89 D-Index: 8 scientists 90 D-Index: 17 scientists 91 D-Index: 7 scientists 92 D-Index: 14 scientists 93 D-Index: 9 scientists 94 D-Index: 15 scientists 95 D-Index: 10 scientists 96 D-Index: 12 scientists 97 D-Index: 10 scientists 98 D-Index: 10 scientists 99 D-Index: 12 scientists 100 D-Index: 16 scientists 101 D-Index: 5 scientists 102 D-Index: 7 scientists 103 D-Index: 7 scientists 104 D-Index: 8 scientists 105 D-Index: 9 scientists 106 D-Index: 13 scientists 107 D-Index: 4 scientists 108 D-Index: 5 scientists 109 D-Index: 10 scientists 110 D-Index: 8 scientists 111+ D-Index: 96 scientists
30 D-Index 111+

This scientist: 31 D-Index — 6th percentile

6% of scientists in this discipline score the same or lower.

The last bar groups every scientist with 111 D-Index or more.

Overview

Takahiro Hanyu is affiliated with Tohoku University in Japan. Their research spans multiple fields within engineering and computer science, with a focus on electrical and electronic engineering as well as related subfields such as artificial intelligence, hardware and architecture, computer networks and communications, and computational theory and mathematics.

The scientist's main topics of research encompass advanced memory and neural computing, ferroelectric and negative capacitance devices, quantum computing algorithms and architecture, parallel computing and optimization techniques, low-power high-performance VLSI design, error correcting code techniques, and VLSI and FPGA design techniques.

Frequent coauthors collaborating with Takahiro Hanyu include Naoya Onizawa, Masanori Natsui, Daisuke Suzuki, Duckgyu Shin, and Warren J. Gross.

They have published in a variety of academic venues, with notable frequency in:

  • Japanese Journal of Applied Physics
  • IEEE Access
  • Extended Abstracts of the 2020 International Conference on Solid State Devices and Materials
  • IEEE Transactions on Very Large Scale Integration (VLSI) Systems
  • Scientific Reports

Recent scholarly contributions include:

  • "Dual-Port SOT-MRAM Achieving 90-MHz Read and 60-MHz Write Operations Under Field-Assistance-Free Condition" (2020), published in IEEE Journal of Solid-State Circuits
  • "A Design Framework for Invertible Logic" (2020), published in IEEE Transactions on Computer-Aided Design of Integrated Circuits and Systems
  • "Memristive Computational Memory Using Memristor Overwrite Logic (MOL)" (2020), published in IEEE Transactions on Very Large Scale Integration (VLSI) Systems
  • "High-Throughput/Low-Energy MTJ-Based True Random Number Generator Using a Multi-Voltage/Current Converter" (2020), published in IEEE Transactions on Very Large Scale Integration (VLSI) Systems
  • "Memory-Efficient FPGA Implementation of Stochastic Simulated Annealing" (2023), published in IEEE Journal on Emerging and Selected Topics in Circuits and Systems

Best Publications

  • Magnetic Tunnel Junctions for Spintronic Memories and Beyond

    S. Ikeda;J. Hayakawa;Young Min Lee;F. Matsukura

  • Fabrication of a Nonvolatile Full Adder Based on Logic-in-Memory Architecture Using Magnetic Tunnel Junctions

    Shoun Matsunaga;Jun Hayakawa;Shoji Ikeda;Katsuya Miura;Katsuya Miura

  • VLSI Implementation of Deep Neural Network Using Integral Stochastic Computing

    Arash Ardakani;Francois Leduc-Primeau;Naoya Onizawa;Takahiro Hanyu

  • An Overview of Nonvolatile Emerging Memories— Spintronics for Working Memories

    Tetsuo Endoh;Hiroki Koike;Shoji Ikeda;Takahiro Hanyu

  • A 200 MHz pipelined multiplier using 1.5 V-supply multiple-valued MOS current-mode circuits with dual-rail source-coupled logic

    T. Hanyu;M. Kameyama

  • Standby-Power-Free Integrated Circuits Using MTJ-Based VLSI Computing

    Takahiro Hanyu;Tetsuo Endoh;Daisuke Suzuki;Hiroki Koike

  • Standby-Power-Free Compact Ternary Content-Addressable Memory Cell Chip Using Magnetic Tunnel Junction Devices

    Shoun Matsunaga;Kimiyuki Hiyama;Atsushi Matsumoto;Shoji Ikeda

  • A 3.14 um 2 4T-2MTJ-cell fully parallel TCAM based on nonvolatile logic-in-memory architecture

    Shoun Matsunaga;Sadahiko Miura;Hiroaki Honjou;Keizo Kinoshita

  • Magnetic tunnel junction for nonvolatile CMOS logic

    Hideo Ohno;Tetsuo Endoh;Takahiro Hanyu;Naoki Kasai

  • 10.5 A 90nm 20MHz fully nonvolatile microcontroller for standby-power-critical applications

    Noboru Sakimura;Yukihide Tsuji;Ryusuke Nebashi;Hiroaki Honjo

  • MTJ-based nonvolatile logic-in-memory circuit, future prospects and issues

    Shoun Matsunaga;Jun Hayakawa;Shoji Ikeda;Katsuya Miura

  • A 1 Mb Nonvolatile Embedded Memory Using 4T2MTJ Cell With 32 b Fine-Grained Power Gating Scheme

    Takashi Ohsawa;Hiroki Koike;Sadahiko Miura;Hiroaki Honjo

  • Complementary ferroelectric-capacitor logic for low-power logic-in-memory VLSI

    H. Kimura;T. Hanyu;M. Kameyama;Y. Fujimori

  • TMR-Based Logic-in-Memory Circuit for Low-Power VLSI *

    Akira Mochizuki;Hiromitsu Kimura;Mitsuru Ibuki;Takahiro Hanyu

  • 1Mb 4T-2MTJ nonvolatile STT-RAM for embedded memories using 32b fine-grained power gating technique with 1.0ns/200ps wake-up/power-off times

    T. Ohsawa;H. Koike;S. Miura;H. Honjo

  • Fabrication of a nonvolatile lookup-table circuit chip using magneto/semiconductor-hybrid structure for an immediate-power-up field programmable gate array

    Daisuke Suzuki;Masanori Natsui;Shoji Ikeda;Haruhiro Hasegawa

  • Six-input lookup table circuit with 62% fewer transistors using nonvolatile logic-in-memory architecture with series/parallel-connected magnetic tunnel junctions

    D. Suzuki;M. Natsui;T. Endoh;H. Ohno

  • Design and implementation of quaternary NMOS integrated circuits for pipelined image processing

    M. Kameyama;T. Hanyu;T. Higuchi

  • Nonvolatile logic-in-memory array processor in 90nm MTJ/MOS achieving 75% leakage reduction using cycle-based power gating

    M. Natsui;D. Suzuki;N. Sakimura;R. Nebashi

  • Cost-Efficient Self-Terminated Write Driver for Spin-Transfer-Torque RAM and Logic

    Daisuke Suzuki;Masanori Natsui;Akira Mochizuki;Takahiro Hanyu

  • First demonstration of field-free SOT-MRAM with 0.35 ns write speed and 70 thermal stability under 400°C thermal tolerance by canted SOT structure and its advanced patterning/SOT channel technology

    H. Honjo;T. Yoshiduka;Y. Noguchi;M. Yasuhira

  • Nonvolatile Logic-in-Memory LSI Using Cycle-Based Power Gating and its Application to Motion-Vector Prediction

    Masanori Natsui;Daisuke Suzuki;Noboru Sakimura;Ryusuke Nebashi

Frequent Co-Authors

Tetsuo Endoh
Tetsuo Endoh Tohoku University
Hideo Ohno
Hideo Ohno Tohoku University
Shoji Ikeda
Shoji Ikeda Tohoku University
Warren J. Gross
Warren J. Gross McGill University
Takashi Ohsawa
Takashi Ohsawa Waseda University
Yasuhiro Yoshida
Yasuhiro Yoshida Hokkaido University
Takafumi Aoki
Takafumi Aoki Tohoku University
Yasuo Ando
Yasuo Ando Tohoku University
Fumihiro Matsukura
Fumihiro Matsukura Tohoku University
Kohei M. Itoh
Kohei M. Itoh Keio University

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