World's Best Scientists 2026 revealed!

D-Index & Metrics

Electronics and Electrical Engineering

D-Index
35
Citations
4384
World Ranking
5631
National Ranking
813

Wang Kang publication distribution in Electronics and Electrical Engineering in 2026

The chart shows the distribution of publications by all Research.com ranked scientists in the field of Electronics and Electrical Engineering in 2026. The highlighted bar marks where Wang Kang sits on this spectrum.

34–53 publications: 24 scientists 54–73 publications: 52 scientists 74–93 publications: 114 scientists 94–113 publications: 203 scientists 114–133 publications: 269 scientists 134–153 publications: 355 scientists 154–173 publications: 403 scientists 174–193 publications: 445 scientists 194–213 publications: 430 scientists 214–233 publications: 431 scientists 234–253 publications: 399 scientists 254–273 publications: 366 scientists 274–293 publications: 335 scientists 294–313 publications: 300 scientists 314–333 publications: 276 scientists 334–353 publications: 250 scientists 354–373 publications: 214 scientists 374–393 publications: 187 scientists 394–413 publications: 152 scientists 414–433 publications: 169 scientists 434–453 publications: 147 scientists 454–473 publications: 111 scientists 474–493 publications: 117 scientists 494–513 publications: 103 scientists 514–533 publications: 99 scientists 534–553 publications: 92 scientists 554–573 publications: 75 scientists 574–593 publications: 58 scientists 594–613 publications: 69 scientists 614–633 publications: 50 scientists 634–653 publications: 62 scientists 654–673 publications: 54 scientists 674–693 publications: 44 scientists 694–713 publications: 37 scientists 714–733 publications: 28 scientists 734–753 publications: 26 scientists 754–773 publications: 26 scientists 774–793 publications: 19 scientists 794–813 publications: 23 scientists 814–833 publications: 20 scientists 834–853 publications: 16 scientists 854–873 publications: 20 scientists 874–893 publications: 11 scientists 894–913 publications: 11 scientists 914–933 publications: 16 scientists 934–953 publications: 13 scientists 954–973 publications: 10 scientists 974–993 publications: 11 scientists 994–1,013 publications: 9 scientists 1,014–1,033 publications: 9 scientists 1,034–1,053 publications: 10 scientists 1,054–1,064 publications: 6 scientists 1,065+ publications: 99 scientists
34 publications 1,065+

This scientist: 145 publications — 13th percentile

13% of scientists in this discipline score the same or lower.

The last bar groups every scientist with 1,065 publications or more.

Wang Kang D-index placement in Electronics and Electrical Engineering in 2026

The chart shows the D-index (discipline H-index) distribution of Electronics and Electrical Engineering scientists ranked by Research.com in 2026. The highlighted bar marks where Wang Kang sits on this spectrum.

30 D-Index: 178 scientists 31 D-Index: 257 scientists 32 D-Index: 263 scientists 33 D-Index: 262 scientists 34 D-Index: 244 scientists 35 D-Index: 236 scientists 36 D-Index: 211 scientists 37 D-Index: 220 scientists 38 D-Index: 214 scientists 39 D-Index: 214 scientists 40 D-Index: 205 scientists 41 D-Index: 187 scientists 42 D-Index: 194 scientists 43 D-Index: 201 scientists 44 D-Index: 155 scientists 45 D-Index: 189 scientists 46 D-Index: 148 scientists 47 D-Index: 160 scientists 48 D-Index: 134 scientists 49 D-Index: 130 scientists 50 D-Index: 141 scientists 51 D-Index: 156 scientists 52 D-Index: 108 scientists 53 D-Index: 130 scientists 54 D-Index: 112 scientists 55 D-Index: 97 scientists 56 D-Index: 111 scientists 57 D-Index: 102 scientists 58 D-Index: 108 scientists 59 D-Index: 120 scientists 60 D-Index: 103 scientists 61 D-Index: 93 scientists 62 D-Index: 92 scientists 63 D-Index: 74 scientists 64 D-Index: 77 scientists 65 D-Index: 73 scientists 66 D-Index: 64 scientists 67 D-Index: 69 scientists 68 D-Index: 60 scientists 69 D-Index: 39 scientists 70 D-Index: 57 scientists 71 D-Index: 59 scientists 72 D-Index: 46 scientists 73 D-Index: 49 scientists 74 D-Index: 38 scientists 75 D-Index: 35 scientists 76 D-Index: 32 scientists 77 D-Index: 35 scientists 78 D-Index: 31 scientists 79 D-Index: 22 scientists 80 D-Index: 34 scientists 81 D-Index: 31 scientists 82 D-Index: 34 scientists 83 D-Index: 23 scientists 84 D-Index: 18 scientists 85 D-Index: 30 scientists 86 D-Index: 19 scientists 87 D-Index: 19 scientists 88 D-Index: 20 scientists 89 D-Index: 8 scientists 90 D-Index: 17 scientists 91 D-Index: 7 scientists 92 D-Index: 14 scientists 93 D-Index: 9 scientists 94 D-Index: 15 scientists 95 D-Index: 10 scientists 96 D-Index: 12 scientists 97 D-Index: 10 scientists 98 D-Index: 10 scientists 99 D-Index: 12 scientists 100 D-Index: 16 scientists 101 D-Index: 5 scientists 102 D-Index: 7 scientists 103 D-Index: 7 scientists 104 D-Index: 8 scientists 105 D-Index: 9 scientists 106 D-Index: 13 scientists 107 D-Index: 4 scientists 108 D-Index: 5 scientists 109 D-Index: 10 scientists 110 D-Index: 8 scientists 111+ D-Index: 96 scientists
30 D-Index 111+

This scientist: 35 D-Index — 21st percentile

21% of scientists in this discipline score the same or lower.

The last bar groups every scientist with 111 D-Index or more.

Overview

Wang Kang is affiliated with Beihang University in China, focusing on research that spans engineering and computer science.

Their recent publications encompass a range of topics related to advanced materials, magnetic properties, and unconventional computing systems. Notable papers include:

  • Above Room-Temperature Ferromagnetism in Wafer-Scale Two-Dimensional van der Waals Fe3GeTe2 Tailored by a Topological Insulator, 2020, ACS Nano
  • Experimental demonstration of skyrmionic magnetic tunnel junction at room temperature, 2022, Science Bulletin
  • Stochastic Computing Implemented by Skyrmionic Logic Devices, 2020, Physical Review Applied
  • Experimental demonstration of a skyrmion-enhanced strain-mediated physical reservoir computing system, 2023, Nature Communications
  • Roadmap for unconventional computing with nanotechnology, 2024, Nano Futures

The majority of their work is published in journals related to integrated circuits, electron devices, and applied physics, including:

  • IEEE Transactions on Computer-Aided Design of Integrated Circuits and Systems
  • IEEE Transactions on Electron Devices
  • IEEE Transactions on Circuits and Systems I Regular Papers
  • IEEE Transactions on Circuits & Systems II Express Briefs
  • Nature Communications

Frequent collaborators in their research include:

  • Weisheng Zhao
  • He Zhang
  • Junzhan Liu
  • Biao Pan
  • Jinyu Bai

Their primary fields of study are:

  • Engineering
  • Computer Science

Subfields with significant contributions include:

  • Electrical and Electronic Engineering
  • Artificial Intelligence
  • Atomic and Molecular Physics, and Optics
  • Hardware and Architecture
  • Computer Networks and Communications

Research topics frequently addressed by Wang Kang cover:

  • Advanced Memory and Neural Computing
  • Ferroelectric and Negative Capacitance Devices
  • Neural Networks and Reservoir Computing
  • Magnetic properties of thin films
  • Parallel Computing and Optimization Techniques
  • CCD and CMOS Imaging Sensors
  • Semiconductor materials and devices

Best Publications

  • Skyrmion-based artificial synapses for neuromorphic computing

    Kyung Mee Song;Jae-Seung Jeong;Biao Pan;Xichao Zhang

  • Magnetic skyrmion-based synaptic devices

    Yangqi Huang;Wang Kang;Xichao Zhang;Yan Zhou

  • Skyrmion-Electronics: An Overview and Outlook

    Wang Kang;Yangqi Huang;Xichao Zhang;Yan Zhou

  • Voltage Controlled Magnetic Skyrmion Motion for Racetrack Memory.

    Wang Kang;Yangqi Huang;Chentian Zheng;Weifeng Lv

  • Magnetic skyrmion-based artificial neuron device.

    Sai Li;Wang Kang;Yangqi Huang;Xichao Zhang

  • Reconfigurable Codesign of STT-MRAM Under Process Variations in Deeply Scaled Technology

    Wang Kang;Liuyang Zhang;Jacques-Olivier Klein;Youguang Zhang

  • Modeling and Exploration of the Voltage-Controlled Magnetic Anisotropy Effect for the Next-Generation Low-Power and High-Speed MRAM Applications

    Wang Kang;Yi Ran;Youguang Zhang;Weifeng Lv

  • A compact skyrmionic leaky-integrate-fire spiking neuron device.

    Xing Chen;Wang Kang;Daoqian Zhu;Xichao Zhang

  • Spintronics: Emerging Ultra-Low-Power Circuits and Systems beyond MOS Technology

    Wang Kang;Yue Zhang;Zhaohao Wang;Jacques-Olivier Klein

  • Compact Model of Subvolume MTJ and Its Design Application at Nanoscale Technology Nodes

    Yue Zhang;Bonan Yan;Wang Kang;Yuanqing Cheng

  • Voltage Controlled Magnetic Skyrmion Motion for Racetrack Memory

    Wang Kang;Yangqi Huang;Chentian Zheng;Weifeng Lv

  • Stateful Reconfigurable Logic via a Single-Voltage-Gated Spin Hall-Effect Driven Magnetic Tunnel Junction in a Spintronic Memory

    He Zhang;Wang Kang;Lezhi Wang;Kang L. Wang

  • In-Memory Processing Paradigm for Bitwise Logic Operations in STT–MRAM

    Wang Kang;Haotian Wang;Zhaohao Wang;Youguang Zhang

  • Failure Analysis in Magnetic Tunnel Junction Nanopillar with Interfacial Perpendicular Magnetic Anisotropy.

    Weisheng Zhao;Xiaoxuan Zhao;Boyu Zhang;Kaihua Cao

  • A Multilevel Cell STT-MRAM-Based Computing In-Memory Accelerator for Binary Convolutional Neural Network

    Yu Pan;Peng Ouyang;Yinglin Zhao;Wang Kang

  • Yield and Reliability Improvement Techniques for Emerging Nonvolatile STT-MRAM

    Wang Kang;Liuyang Zhang;Weisheng Zhao;Jacques-Olivier Klein

  • A radiation hardened hybrid spintronic/CMOS nonvolatile unit using magnetic tunnel junctions

    Wang kang;Wang kang;Weisheng Zhao;Weisheng Zhao;Erya Deng;Jacques-Olivier Klein

  • Separated Precharge Sensing Amplifier for Deep Submicrometer MTJ/CMOS Hybrid Logic Circuits

    Wang Kang;Erya Deng;Jacques-Olivier Klein;Yue Zhang

  • Variation-Tolerant and Disturbance-Free Sensing Circuit for Deep Nanometer STT-MRAM

    Wang Kang;Zheng Li;Jacques-Olivier Klein;Yuanqing Chen

  • Spintronic logic design methodology based on spin Hall effect–driven magnetic tunnel junctions

    Wang Kang;Zhaohao Wang;Youguang Zhang;Jacques-Olivier Klein

  • High reliability sensing circuit for deep submicron spin transfer torque magnetic random access memory

    Wang Kang;Weisheng Zhao;J.-O. Klein;Youguang Zhang

  • Stochastic Computing Implemented by Skyrmionic Logic Devices

    Haoyang Zhang;Daoqian Zhu;Wang Kang;Youguang Zhang

  • Complementary Skyrmion Racetrack Memory with Voltage Manipulation

    Wang Kang;Chentian Zheng;Yangqi Huang;Xichao Zhang

Frequent Co-Authors

Weisheng Zhao
Weisheng Zhao Beihang University
Youguang Zhang
Youguang Zhang Beihang University
Jacques-Olivier Klein
Jacques-Olivier Klein University of Paris-Saclay
Kang L. Wang
Kang L. Wang University of California, Los Angeles
Damien Querlioz
Damien Querlioz University of Paris-Saclay
Shaojun Wei
Shaojun Wei Tsinghua University
Shouyi Yin
Shouyi Yin Tsinghua University
Hai Li
Hai Li Duke University
Pierre-Antoine Albouy
Pierre-Antoine Albouy University of Paris-Saclay
Mehdi B. Tahoori
Mehdi B. Tahoori Karlsruhe Institute of Technology

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