World's Best Scientists 2026 revealed!

D-Index & Metrics

Electronics and Electrical Engineering

D-Index
35
Citations
4384
World Ranking
5631
National Ranking
812

Overview

Wang Kang is affiliated with Beihang University in China, focusing on research that spans engineering and computer science.

Their recent publications encompass a range of topics related to advanced materials, magnetic properties, and unconventional computing systems. Notable papers include:

  • Above Room-Temperature Ferromagnetism in Wafer-Scale Two-Dimensional van der Waals Fe3GeTe2 Tailored by a Topological Insulator, 2020, ACS Nano
  • Experimental demonstration of skyrmionic magnetic tunnel junction at room temperature, 2022, Science Bulletin
  • Stochastic Computing Implemented by Skyrmionic Logic Devices, 2020, Physical Review Applied
  • Experimental demonstration of a skyrmion-enhanced strain-mediated physical reservoir computing system, 2023, Nature Communications
  • Roadmap for unconventional computing with nanotechnology, 2024, Nano Futures

The majority of their work is published in journals related to integrated circuits, electron devices, and applied physics, including:

  • IEEE Transactions on Computer-Aided Design of Integrated Circuits and Systems
  • IEEE Transactions on Electron Devices
  • IEEE Transactions on Circuits and Systems I Regular Papers
  • IEEE Transactions on Circuits & Systems II Express Briefs
  • Nature Communications

Frequent collaborators in their research include:

  • Weisheng Zhao
  • He Zhang
  • Junzhan Liu
  • Biao Pan
  • Jinyu Bai

Their primary fields of study are:

  • Engineering
  • Computer Science

Subfields with significant contributions include:

  • Electrical and Electronic Engineering
  • Artificial Intelligence
  • Atomic and Molecular Physics, and Optics
  • Hardware and Architecture
  • Computer Networks and Communications

Research topics frequently addressed by Wang Kang cover:

  • Advanced Memory and Neural Computing
  • Ferroelectric and Negative Capacitance Devices
  • Neural Networks and Reservoir Computing
  • Magnetic properties of thin films
  • Parallel Computing and Optimization Techniques
  • CCD and CMOS Imaging Sensors
  • Semiconductor materials and devices

Best Publications

  • Skyrmion-based artificial synapses for neuromorphic computing

    Kyung Mee Song;Jae-Seung Jeong;Biao Pan;Xichao Zhang

  • Magnetic skyrmion-based synaptic devices

    Yangqi Huang;Wang Kang;Xichao Zhang;Yan Zhou

  • Skyrmion-Electronics: An Overview and Outlook

    Wang Kang;Yangqi Huang;Xichao Zhang;Yan Zhou

  • Voltage Controlled Magnetic Skyrmion Motion for Racetrack Memory.

    Wang Kang;Yangqi Huang;Chentian Zheng;Weifeng Lv

  • Magnetic skyrmion-based artificial neuron device.

    Sai Li;Wang Kang;Yangqi Huang;Xichao Zhang

  • Reconfigurable Codesign of STT-MRAM Under Process Variations in Deeply Scaled Technology

    Wang Kang;Liuyang Zhang;Jacques-Olivier Klein;Youguang Zhang

  • Modeling and Exploration of the Voltage-Controlled Magnetic Anisotropy Effect for the Next-Generation Low-Power and High-Speed MRAM Applications

    Wang Kang;Yi Ran;Youguang Zhang;Weifeng Lv

  • A compact skyrmionic leaky-integrate-fire spiking neuron device.

    Xing Chen;Wang Kang;Daoqian Zhu;Xichao Zhang

  • Spintronics: Emerging Ultra-Low-Power Circuits and Systems beyond MOS Technology

    Wang Kang;Yue Zhang;Zhaohao Wang;Jacques-Olivier Klein

  • Compact Model of Subvolume MTJ and Its Design Application at Nanoscale Technology Nodes

    Yue Zhang;Bonan Yan;Wang Kang;Yuanqing Cheng

  • Voltage Controlled Magnetic Skyrmion Motion for Racetrack Memory

    Wang Kang;Yangqi Huang;Chentian Zheng;Weifeng Lv

  • Stateful Reconfigurable Logic via a Single-Voltage-Gated Spin Hall-Effect Driven Magnetic Tunnel Junction in a Spintronic Memory

    He Zhang;Wang Kang;Lezhi Wang;Kang L. Wang

  • In-Memory Processing Paradigm for Bitwise Logic Operations in STT–MRAM

    Wang Kang;Haotian Wang;Zhaohao Wang;Youguang Zhang

  • Failure Analysis in Magnetic Tunnel Junction Nanopillar with Interfacial Perpendicular Magnetic Anisotropy.

    Weisheng Zhao;Xiaoxuan Zhao;Boyu Zhang;Kaihua Cao

  • A Multilevel Cell STT-MRAM-Based Computing In-Memory Accelerator for Binary Convolutional Neural Network

    Yu Pan;Peng Ouyang;Yinglin Zhao;Wang Kang

  • Yield and Reliability Improvement Techniques for Emerging Nonvolatile STT-MRAM

    Wang Kang;Liuyang Zhang;Weisheng Zhao;Jacques-Olivier Klein

  • A radiation hardened hybrid spintronic/CMOS nonvolatile unit using magnetic tunnel junctions

    Wang kang;Wang kang;Weisheng Zhao;Weisheng Zhao;Erya Deng;Jacques-Olivier Klein

  • Separated Precharge Sensing Amplifier for Deep Submicrometer MTJ/CMOS Hybrid Logic Circuits

    Wang Kang;Erya Deng;Jacques-Olivier Klein;Yue Zhang

  • Variation-Tolerant and Disturbance-Free Sensing Circuit for Deep Nanometer STT-MRAM

    Wang Kang;Zheng Li;Jacques-Olivier Klein;Yuanqing Chen

  • Spintronic logic design methodology based on spin Hall effect–driven magnetic tunnel junctions

    Wang Kang;Zhaohao Wang;Youguang Zhang;Jacques-Olivier Klein

  • High reliability sensing circuit for deep submicron spin transfer torque magnetic random access memory

    Wang Kang;Weisheng Zhao;J.-O. Klein;Youguang Zhang

  • Stochastic Computing Implemented by Skyrmionic Logic Devices

    Haoyang Zhang;Daoqian Zhu;Wang Kang;Youguang Zhang

  • Complementary Skyrmion Racetrack Memory with Voltage Manipulation

    Wang Kang;Chentian Zheng;Yangqi Huang;Xichao Zhang

Frequent Co-Authors

Weisheng Zhao
Weisheng Zhao Beihang University
Youguang Zhang
Youguang Zhang Beihang University
Jacques-Olivier Klein
Jacques-Olivier Klein University of Paris-Saclay
Kang L. Wang
Kang L. Wang University of California, Los Angeles
Shaojun Wei
Shaojun Wei Tsinghua University
Shouyi Yin
Shouyi Yin Tsinghua University
Hai Li
Hai Li Duke University
Mehdi B. Tahoori
Mehdi B. Tahoori Karlsruhe Institute of Technology
Meng-Fan Chang
Meng-Fan Chang National Tsing Hua University

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