Felice Crupi mainly investigates Optoelectronics, Electrical engineering, Electronic engineering, Voltage and Threshold voltage. His work on Band gap as part of general Optoelectronics study is frequently linked to Current density, therefore connecting diverse disciplines of science. His study in Quantum efficiency extends to Electrical engineering with its themes.
His research investigates the connection between Electronic engineering and topics such as Electronic circuit that intersect with problems in Node. His Threshold voltage study combines topics in areas such as Molecular physics, Temperature instability, Control circuit, Dielectric and MOSFET. His Capacitor research incorporates themes from Phenomenological model, Shot noise, Analytical chemistry, Quantum tunnelling and Gate oxide.
Felice Crupi spends much of his time researching Optoelectronics, Electronic engineering, Electrical engineering, MOSFET and Voltage. His Optoelectronics research integrates issues from Noise and Time-dependent gate oxide breakdown. His Electronic engineering research includes elements of Noise measurement, Electronic circuit and Y-factor.
Felice Crupi combines subjects such as Condensed matter physics and Scaling with his study of Electrical engineering. His study explores the link between MOSFET and topics such as Threshold voltage that cross with problems in Subthreshold conduction. His research brings together the fields of Analytical chemistry and Voltage.
His scientific interests lie mostly in Optoelectronics, Electrical engineering, Electronic engineering, Voltage and Transistor. His study looks at the relationship between Optoelectronics and fields such as Nanotechnology, as well as how they intersect with chemical problems. His study on Node, Low voltage and Logic gate is often connected to Physical unclonable function as part of broader study in Electrical engineering.
In general Electronic engineering study, his work on CMOS often relates to the realm of Automotive industry, thereby connecting several areas of interest. His research in Voltage tackles topics such as Condensed matter physics which are related to areas like State, Breakdown voltage and Nanoscopic scale. His work on Subthreshold conduction is typically connected to Monte Carlo method as part of general Transistor study, connecting several disciplines of science.
Optoelectronics, Voltage, Electrical engineering, Node and CMOS are his primary areas of study. His research is interdisciplinary, bridging the disciplines of Threshold voltage and Optoelectronics. The study incorporates disciplines such as Noise, Time constant and Logic gate in addition to Threshold voltage.
His study in Voltage is interdisciplinary in nature, drawing from both Condensed matter physics and Scaling. His Node research is multidisciplinary, incorporating perspectives in Digital electronics and Electronic circuit. His CMOS research entails a greater understanding of Electronic engineering.
This overview was generated by a machine learning system which analysed the scientist’s body of work. If you have any feedback, you can contact us here.
A 2.6 nW, 0.45 V Temperature-Compensated Subthreshold CMOS Voltage Reference
L Magnelli;F Crupi;P Corsonello;C Pace.
IEEE Journal of Solid-state Circuits (2011)
$1/f$ Noise in Drain and Gate Current of MOSFETs With High- $k$ Gate Stacks
P. Magnone;F. Crupi;G. Giusi;C. Pace.
IEEE Transactions on Device and Materials Reliability (2009)
On the properties of the gate and substrate current after soft breakdown in ultrathin oxide layers
F. Crupi;R. Degraeve;G. Groeseneken;T. Nigam.
IEEE Transactions on Electron Devices (1998)
Impact strain engineering on gate stack quality and reliability
Corneel Claeys;Eddy Simoen;Sofie Put;G. Giusi.
Solid-state Electronics (2008)
Degradation and hard breakdown transient of thin gate oxides in metal–SiO2–Si capacitors: Dependence on oxide thickness
S. Lombardo;A. La Magna;C. Spinella;C. Gerardi.
Journal of Applied Physics (1999)
Correlation between Stress-Induced Leakage Current (SILC) and the HfO/sub 2/ bulk trap density in a SiO/sub 2//HfO/sub 2/ stack
F. Crupi;R. Degraeve;A. Kerber;D.H. Kwak.
international reliability physics symposium (2004)
Design of a 75-nW, 0.5-V subthreshold complementary metal-oxide-semiconductor operational amplifier
Luca Magnelli;Francesco A. Amoroso;Felice Crupi;Gregorio Cappuccino.
International Journal of Circuit Theory and Applications (2014)
Impact of TFET Unidirectionality and Ambipolarity on the Performance of 6T SRAM Cells
Sebastiano Strangio;Pierpaolo Palestri;David Esseni;Luca Selmi.
IEEE Journal of the Electron Devices Society (2015)
A Sub- ${oldsymbol kT}/oldsymbol q$ Voltage Reference Operating at 150 mV
Domenico Albano;Felice Crupi;Francesca Cucchi;Giuseppe Iannaccone.
IEEE Transactions on Very Large Scale Integration Systems (2015)
Comparative study of drain and gate low-frequency noise in nMOSFETs with hafnium-based gate dielectrics
Gino Giusi;F. Crupi;C. Pace;C. Ciofi.
IEEE Transactions on Electron Devices (2006)
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