Felice Crupi

Overview

Best Publications

• A 2.6 nW, 0.45 V Temperature-Compensated Subthreshold CMOS Voltage Reference

  L Magnelli;F Crupi;P Corsonello;C Pace

  358
  Citations

• $1/f$ Noise in Drain and Gate Current of MOSFETs With High- $k$ Gate Stacks

  P. Magnone;F. Crupi;G. Giusi;C. Pace

  149
  Citations

• On the properties of the gate and substrate current after soft breakdown in ultrathin oxide layers

  F. Crupi;R. Degraeve;G. Groeseneken;T. Nigam

  124
  Citations

• Design of a 75-nW, 0.5-V subthreshold complementary metal-oxide-semiconductor operational amplifier

  Luca Magnelli;Francesco A. Amoroso;Felice Crupi;Gregorio Cappuccino

  118
  Citations

• Impact strain engineering on gate stack quality and reliability

  Corneel Claeys;Eddy Simoen;Sofie Put;G. Giusi

  111
  Citations

• An Ultralow-Voltage Energy-Efficient Level Shifter

  Marco Lanuzza;Felice Crupi;Sandro Rao;Raffaele De Rose

  99
  Citations

• Correlation between Stress-Induced Leakage Current (SILC) and the HfO/sub 2/ bulk trap density in a SiO/sub 2//HfO/sub 2/ stack

  F. Crupi;R. Degraeve;A. Kerber;D.H. Kwak

  97
  Citations

• Degradation and hard breakdown transient of thin gate oxides in metal–SiO2–Si capacitors: Dependence on oxide thickness

  S. Lombardo;A. La Magna;C. Spinella;C. Gerardi

  97
  Citations

• A Sub- ${oldsymbol kT}/oldsymbol q$ Voltage Reference Operating at 150 mV

  Domenico Albano;Felice Crupi;Francesca Cucchi;Giuseppe Iannaccone

  92
  Citations

• Impact of TFET Unidirectionality and Ambipolarity on the Performance of 6T SRAM Cells

  Sebastiano Strangio;Pierpaolo Palestri;David Esseni;Luca Selmi

  90
  Citations

• Mixed Tunnel-FET/MOSFET Level Shifters: A New Proposal to Extend the Tunnel-FET Application Domain

  Marco Lanuzza;Sebastiano Strangio;Felice Crupi;Pierpaolo Palestri

  80
  Citations

• Impact of Hot Carriers on nMOSFET Variability in 45- and 65-nm CMOS Technologies

  P. Magnone;F. Crupi;N. Wils;R. Jain

  75
  Citations

• Digital and analog TFET circuits: Design and benchmark

  Sebastiano Strangio;Sebastiano Strangio;Francesco Settino;Francesco Settino;P. Palestri;M. Lanuzza

  74
  Citations

• Comparative study of drain and gate low-frequency noise in nMOSFETs with hafnium-based gate dielectrics

  Gino Giusi;F. Crupi;C. Pace;C. Ciofi

  73
  Citations

• Impact of the interfacial layer on the low-frequency noise (1/f) behavior of MOSFETs with advanced gate stacks

  F. Crupi;P. Srinivasan;P. Magnone;E. Simoen

  71
  Citations

• Electrical and thermal transient during dielectric breakdown of thin oxides in metal-SiO2-silicon capacitors

  S. Lombardo;F. Crupi;A. La Magna;C. Spinella

  67
  Citations

• Understanding the Potential and Limitations of Tunnel FETs for Low-Voltage Analog/Mixed-Signal Circuits

  Francesco Settino;Marco Lanuzza;Sebastiano Strangio;Felice Crupi

  60
  Citations

• Positive Bias Temperature Instability in nMOSFETs with ultra-thin Hf-silicate gate dielectrics

  F. Crupi;C. Pace;G. Cocorullo;G. Groeseneken

  60
  Citations

• Structural and electrical analysis of the atomic layer deposition of HfO2/n-In0.53Ga0.47As capacitors with and without an Al2O3 interface control layer

  Aileen O'Mahony;Scott Monaghan;G. Provenzano;Ian M. Povey

  60
  Citations

• Observation of hot-carrier-induced nFET gate-oxide breakdown in dynamically stressed CMOS circuits

  B. Kaczer;F. Crupi;R. Degraeve;Ph. Roussel

  55
  Citations

• On the Temperature and Field Dependence of Trap-Assisted Tunneling Current in Ge $\hbox{p}^{+}\hbox{n}$ Junctions

  E. Simoen;F. De Stefano;G. Eneman;B. De Jaeger

  49
  Citations