World's Best Scientists 2026 revealed!

D-Index & Metrics

Electronics and Electrical Engineering

D-Index
36
Citations
4985
World Ranking
5376
National Ranking
223

Felice Crupi publication distribution in Electronics and Electrical Engineering in 2026

The chart shows the distribution of publications by all Research.com ranked scientists in the field of Electronics and Electrical Engineering in 2026. The highlighted bar marks where Felice Crupi sits on this spectrum.

34–53 publications: 24 scientists 54–73 publications: 52 scientists 74–93 publications: 114 scientists 94–113 publications: 203 scientists 114–133 publications: 269 scientists 134–153 publications: 355 scientists 154–173 publications: 403 scientists 174–193 publications: 445 scientists 194–213 publications: 430 scientists 214–233 publications: 431 scientists 234–253 publications: 399 scientists 254–273 publications: 366 scientists 274–293 publications: 335 scientists 294–313 publications: 300 scientists 314–333 publications: 276 scientists 334–353 publications: 250 scientists 354–373 publications: 214 scientists 374–393 publications: 187 scientists 394–413 publications: 152 scientists 414–433 publications: 169 scientists 434–453 publications: 147 scientists 454–473 publications: 111 scientists 474–493 publications: 117 scientists 494–513 publications: 103 scientists 514–533 publications: 99 scientists 534–553 publications: 92 scientists 554–573 publications: 75 scientists 574–593 publications: 58 scientists 594–613 publications: 69 scientists 614–633 publications: 50 scientists 634–653 publications: 62 scientists 654–673 publications: 54 scientists 674–693 publications: 44 scientists 694–713 publications: 37 scientists 714–733 publications: 28 scientists 734–753 publications: 26 scientists 754–773 publications: 26 scientists 774–793 publications: 19 scientists 794–813 publications: 23 scientists 814–833 publications: 20 scientists 834–853 publications: 16 scientists 854–873 publications: 20 scientists 874–893 publications: 11 scientists 894–913 publications: 11 scientists 914–933 publications: 16 scientists 934–953 publications: 13 scientists 954–973 publications: 10 scientists 974–993 publications: 11 scientists 994–1,013 publications: 9 scientists 1,014–1,033 publications: 9 scientists 1,034–1,053 publications: 10 scientists 1,054–1,064 publications: 6 scientists 1,065+ publications: 99 scientists
34 publications 1,065+

This scientist: 287 publications — 54th percentile

54% of scientists in this discipline score the same or lower.

The last bar groups every scientist with 1,065 publications or more.

Felice Crupi D-index placement in Electronics and Electrical Engineering in 2026

The chart shows the D-index (discipline H-index) distribution of Electronics and Electrical Engineering scientists ranked by Research.com in 2026. The highlighted bar marks where Felice Crupi sits on this spectrum.

30 D-Index: 178 scientists 31 D-Index: 257 scientists 32 D-Index: 263 scientists 33 D-Index: 262 scientists 34 D-Index: 244 scientists 35 D-Index: 236 scientists 36 D-Index: 211 scientists 37 D-Index: 220 scientists 38 D-Index: 214 scientists 39 D-Index: 214 scientists 40 D-Index: 205 scientists 41 D-Index: 187 scientists 42 D-Index: 194 scientists 43 D-Index: 201 scientists 44 D-Index: 155 scientists 45 D-Index: 189 scientists 46 D-Index: 148 scientists 47 D-Index: 160 scientists 48 D-Index: 134 scientists 49 D-Index: 130 scientists 50 D-Index: 141 scientists 51 D-Index: 156 scientists 52 D-Index: 108 scientists 53 D-Index: 130 scientists 54 D-Index: 112 scientists 55 D-Index: 97 scientists 56 D-Index: 111 scientists 57 D-Index: 102 scientists 58 D-Index: 108 scientists 59 D-Index: 120 scientists 60 D-Index: 103 scientists 61 D-Index: 93 scientists 62 D-Index: 92 scientists 63 D-Index: 74 scientists 64 D-Index: 77 scientists 65 D-Index: 73 scientists 66 D-Index: 64 scientists 67 D-Index: 69 scientists 68 D-Index: 60 scientists 69 D-Index: 39 scientists 70 D-Index: 57 scientists 71 D-Index: 59 scientists 72 D-Index: 46 scientists 73 D-Index: 49 scientists 74 D-Index: 38 scientists 75 D-Index: 35 scientists 76 D-Index: 32 scientists 77 D-Index: 35 scientists 78 D-Index: 31 scientists 79 D-Index: 22 scientists 80 D-Index: 34 scientists 81 D-Index: 31 scientists 82 D-Index: 34 scientists 83 D-Index: 23 scientists 84 D-Index: 18 scientists 85 D-Index: 30 scientists 86 D-Index: 19 scientists 87 D-Index: 19 scientists 88 D-Index: 20 scientists 89 D-Index: 8 scientists 90 D-Index: 17 scientists 91 D-Index: 7 scientists 92 D-Index: 14 scientists 93 D-Index: 9 scientists 94 D-Index: 15 scientists 95 D-Index: 10 scientists 96 D-Index: 12 scientists 97 D-Index: 10 scientists 98 D-Index: 10 scientists 99 D-Index: 12 scientists 100 D-Index: 16 scientists 101 D-Index: 5 scientists 102 D-Index: 7 scientists 103 D-Index: 7 scientists 104 D-Index: 8 scientists 105 D-Index: 9 scientists 106 D-Index: 13 scientists 107 D-Index: 4 scientists 108 D-Index: 5 scientists 109 D-Index: 10 scientists 110 D-Index: 8 scientists 111+ D-Index: 96 scientists
30 D-Index 111+

This scientist: 36 D-Index — 24th percentile

24% of scientists in this discipline score the same or lower.

The last bar groups every scientist with 111 D-Index or more.

Overview

Felice Crupi is affiliated with the University of Calabria in Italy and has a focus on engineering, particularly within electrical and electronic engineering. Their research spans multiple subfields, including hardware and architecture, biomedical engineering, atomic and molecular physics, optics, and surgery.

The main topics of Crupi's work include:

  • Advanced Memory and Neural Computing
  • Ferroelectric and Negative Capacitance Devices
  • Physical Unclonable Functions (PUFs) and Hardware Security
  • Semiconductor materials and devices
  • Advancements in Semiconductor Devices and Circuit Design
  • Magnetic properties of thin films
  • Integrated Circuits and Semiconductor Failure Analysis

Frequent coauthors collaborating with Crupi are:

  • Raffaele De Rose
  • Marco Lanuzza
  • Massimo Vatalaro
  • Esteban Garzón
  • Lionel Trojman

Research findings by Crupi have been published in a variety of venues, with the most frequent being:

  • Solid-State Electronics
  • IEEE Transactions on Circuits & Systems II Express Briefs
  • Università della Calabria
  • IEEE Journal of Solid-State Circuits
  • IEEE Journal of Electromagnetics RF and Microwaves in Medicine and Biology

Some recent papers authored or co-authored by Crupi include:

  • "Trimming-Less Voltage Reference for Highly Uncertain Harvesting Down to 0.25 V, 5.4 pW," 2021, published in IEEE Journal of Solid-State Circuits
  • "A Robust, High-Speed and Energy-Efficient Ultralow-Voltage Level Shifter," 2020, published in IEEE Transactions on Circuits & Systems II Express Briefs
  • "Exploiting STT-MRAMs for Cryogenic Non-Volatile Cache Applications," 2021, published in IEEE Transactions on Nanotechnology
  • "A 0.05 mm², 350 mV, 14 nW Fully-Integrated Temperature Sensor in 180-nm CMOS," 2021, published in IEEE Transactions on Circuits & Systems II Express Briefs
  • "Assessment of STT-MRAMs based on double-barrier MTJs for cache applications by means of a device-to-system level simulation framework," 2020, published in Integration

Best Publications

  • A 2.6 nW, 0.45 V Temperature-Compensated Subthreshold CMOS Voltage Reference

    L Magnelli;F Crupi;P Corsonello;C Pace

  • $1/f$ Noise in Drain and Gate Current of MOSFETs With High- $k$ Gate Stacks

    P. Magnone;F. Crupi;G. Giusi;C. Pace

  • On the properties of the gate and substrate current after soft breakdown in ultrathin oxide layers

    F. Crupi;R. Degraeve;G. Groeseneken;T. Nigam

  • Design of a 75-nW, 0.5-V subthreshold complementary metal-oxide-semiconductor operational amplifier

    Luca Magnelli;Francesco A. Amoroso;Felice Crupi;Gregorio Cappuccino

  • Impact strain engineering on gate stack quality and reliability

    Corneel Claeys;Eddy Simoen;Sofie Put;G. Giusi

  • An Ultralow-Voltage Energy-Efficient Level Shifter

    Marco Lanuzza;Felice Crupi;Sandro Rao;Raffaele De Rose

  • Correlation between Stress-Induced Leakage Current (SILC) and the HfO/sub 2/ bulk trap density in a SiO/sub 2//HfO/sub 2/ stack

    F. Crupi;R. Degraeve;A. Kerber;D.H. Kwak

  • Degradation and hard breakdown transient of thin gate oxides in metal–SiO2–Si capacitors: Dependence on oxide thickness

    S. Lombardo;A. La Magna;C. Spinella;C. Gerardi

  • A Sub- ${oldsymbol kT}/oldsymbol q$ Voltage Reference Operating at 150 mV

    Domenico Albano;Felice Crupi;Francesca Cucchi;Giuseppe Iannaccone

  • Impact of TFET Unidirectionality and Ambipolarity on the Performance of 6T SRAM Cells

    Sebastiano Strangio;Pierpaolo Palestri;David Esseni;Luca Selmi

  • Mixed Tunnel-FET/MOSFET Level Shifters: A New Proposal to Extend the Tunnel-FET Application Domain

    Marco Lanuzza;Sebastiano Strangio;Felice Crupi;Pierpaolo Palestri

  • Impact of Hot Carriers on nMOSFET Variability in 45- and 65-nm CMOS Technologies

    P. Magnone;F. Crupi;N. Wils;R. Jain

  • Digital and analog TFET circuits: Design and benchmark

    Sebastiano Strangio;Sebastiano Strangio;Francesco Settino;Francesco Settino;P. Palestri;M. Lanuzza

  • Comparative study of drain and gate low-frequency noise in nMOSFETs with hafnium-based gate dielectrics

    Gino Giusi;F. Crupi;C. Pace;C. Ciofi

  • Impact of the interfacial layer on the low-frequency noise (1/f) behavior of MOSFETs with advanced gate stacks

    F. Crupi;P. Srinivasan;P. Magnone;E. Simoen

  • Electrical and thermal transient during dielectric breakdown of thin oxides in metal-SiO2-silicon capacitors

    S. Lombardo;F. Crupi;A. La Magna;C. Spinella

  • Understanding the Potential and Limitations of Tunnel FETs for Low-Voltage Analog/Mixed-Signal Circuits

    Francesco Settino;Marco Lanuzza;Sebastiano Strangio;Felice Crupi

  • Positive Bias Temperature Instability in nMOSFETs with ultra-thin Hf-silicate gate dielectrics

    F. Crupi;C. Pace;G. Cocorullo;G. Groeseneken

  • Structural and electrical analysis of the atomic layer deposition of HfO2/n-In0.53Ga0.47As capacitors with and without an Al2O3 interface control layer

    Aileen O'Mahony;Scott Monaghan;G. Provenzano;Ian M. Povey

  • Observation of hot-carrier-induced nFET gate-oxide breakdown in dynamically stressed CMOS circuits

    B. Kaczer;F. Crupi;R. Degraeve;Ph. Roussel

  • On the Temperature and Field Dependence of Trap-Assisted Tunneling Current in Ge $\hbox{p}^{+}\hbox{n}$ Junctions

    E. Simoen;F. De Stefano;G. Eneman;B. De Jaeger

Frequent Co-Authors

Giuseppe Iannaccone
Giuseppe Iannaccone University of Pisa
Eddy Simoen
Eddy Simoen Ghent University
Massimo Alioto
Massimo Alioto National University of Singapore
Pierpaolo Palestri
Pierpaolo Palestri University of Udine
Cor Claeys
Cor Claeys KU Leuven
David Esseni
David Esseni University of Udine

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