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D-Index & Metrics

Electronics and Electrical Engineering

D-Index
36
Citations
6192
World Ranking
5307
National Ranking
95

Montserrat Nafría publication distribution in Electronics and Electrical Engineering in 2026

The chart shows the distribution of publications by all Research.com ranked scientists in the field of Electronics and Electrical Engineering in 2026. The highlighted bar marks where Montserrat Nafría sits on this spectrum.

34–53 publications: 24 scientists 54–73 publications: 52 scientists 74–93 publications: 114 scientists 94–113 publications: 203 scientists 114–133 publications: 269 scientists 134–153 publications: 355 scientists 154–173 publications: 403 scientists 174–193 publications: 445 scientists 194–213 publications: 430 scientists 214–233 publications: 431 scientists 234–253 publications: 399 scientists 254–273 publications: 366 scientists 274–293 publications: 335 scientists 294–313 publications: 300 scientists 314–333 publications: 276 scientists 334–353 publications: 250 scientists 354–373 publications: 214 scientists 374–393 publications: 187 scientists 394–413 publications: 152 scientists 414–433 publications: 169 scientists 434–453 publications: 147 scientists 454–473 publications: 111 scientists 474–493 publications: 117 scientists 494–513 publications: 103 scientists 514–533 publications: 99 scientists 534–553 publications: 92 scientists 554–573 publications: 75 scientists 574–593 publications: 58 scientists 594–613 publications: 69 scientists 614–633 publications: 50 scientists 634–653 publications: 62 scientists 654–673 publications: 54 scientists 674–693 publications: 44 scientists 694–713 publications: 37 scientists 714–733 publications: 28 scientists 734–753 publications: 26 scientists 754–773 publications: 26 scientists 774–793 publications: 19 scientists 794–813 publications: 23 scientists 814–833 publications: 20 scientists 834–853 publications: 16 scientists 854–873 publications: 20 scientists 874–893 publications: 11 scientists 894–913 publications: 11 scientists 914–933 publications: 16 scientists 934–953 publications: 13 scientists 954–973 publications: 10 scientists 974–993 publications: 11 scientists 994–1,013 publications: 9 scientists 1,014–1,033 publications: 9 scientists 1,034–1,053 publications: 10 scientists 1,054–1,064 publications: 6 scientists 1,065+ publications: 99 scientists
34 publications 1,065+

This scientist: 333 publications — 64th percentile

64% of scientists in this discipline score the same or lower.

The last bar groups every scientist with 1,065 publications or more.

Montserrat Nafría D-index placement in Electronics and Electrical Engineering in 2026

The chart shows the D-index (discipline H-index) distribution of Electronics and Electrical Engineering scientists ranked by Research.com in 2026. The highlighted bar marks where Montserrat Nafría sits on this spectrum.

30 D-Index: 178 scientists 31 D-Index: 257 scientists 32 D-Index: 263 scientists 33 D-Index: 262 scientists 34 D-Index: 244 scientists 35 D-Index: 236 scientists 36 D-Index: 211 scientists 37 D-Index: 220 scientists 38 D-Index: 214 scientists 39 D-Index: 214 scientists 40 D-Index: 205 scientists 41 D-Index: 187 scientists 42 D-Index: 194 scientists 43 D-Index: 201 scientists 44 D-Index: 155 scientists 45 D-Index: 189 scientists 46 D-Index: 148 scientists 47 D-Index: 160 scientists 48 D-Index: 134 scientists 49 D-Index: 130 scientists 50 D-Index: 141 scientists 51 D-Index: 156 scientists 52 D-Index: 108 scientists 53 D-Index: 130 scientists 54 D-Index: 112 scientists 55 D-Index: 97 scientists 56 D-Index: 111 scientists 57 D-Index: 102 scientists 58 D-Index: 108 scientists 59 D-Index: 120 scientists 60 D-Index: 103 scientists 61 D-Index: 93 scientists 62 D-Index: 92 scientists 63 D-Index: 74 scientists 64 D-Index: 77 scientists 65 D-Index: 73 scientists 66 D-Index: 64 scientists 67 D-Index: 69 scientists 68 D-Index: 60 scientists 69 D-Index: 39 scientists 70 D-Index: 57 scientists 71 D-Index: 59 scientists 72 D-Index: 46 scientists 73 D-Index: 49 scientists 74 D-Index: 38 scientists 75 D-Index: 35 scientists 76 D-Index: 32 scientists 77 D-Index: 35 scientists 78 D-Index: 31 scientists 79 D-Index: 22 scientists 80 D-Index: 34 scientists 81 D-Index: 31 scientists 82 D-Index: 34 scientists 83 D-Index: 23 scientists 84 D-Index: 18 scientists 85 D-Index: 30 scientists 86 D-Index: 19 scientists 87 D-Index: 19 scientists 88 D-Index: 20 scientists 89 D-Index: 8 scientists 90 D-Index: 17 scientists 91 D-Index: 7 scientists 92 D-Index: 14 scientists 93 D-Index: 9 scientists 94 D-Index: 15 scientists 95 D-Index: 10 scientists 96 D-Index: 12 scientists 97 D-Index: 10 scientists 98 D-Index: 10 scientists 99 D-Index: 12 scientists 100 D-Index: 16 scientists 101 D-Index: 5 scientists 102 D-Index: 7 scientists 103 D-Index: 7 scientists 104 D-Index: 8 scientists 105 D-Index: 9 scientists 106 D-Index: 13 scientists 107 D-Index: 4 scientists 108 D-Index: 5 scientists 109 D-Index: 10 scientists 110 D-Index: 8 scientists 111+ D-Index: 96 scientists
30 D-Index 111+

This scientist: 36 D-Index — 24th percentile

24% of scientists in this discipline score the same or lower.

The last bar groups every scientist with 111 D-Index or more.

Overview

Montserrat Nafría is affiliated with the Autonomous University of Barcelona in Spain. Their research primarily focuses on the field of Engineering, with a significant emphasis on Electrical and Electronic Engineering. Additional subfields include Hardware and Architecture, Cognitive Neuroscience, Statistical and Nonlinear Physics, as well as Atomic and Molecular Physics, and Optics.

The main topics covered in their research encompass Semiconductor Materials and Devices, Advancements in Semiconductor Devices and Circuit Design, Integrated Circuits and Semiconductor Failure Analysis, Advanced Memory and Neural Computing, Ferroelectric and Negative Capacitance Devices, Physical Unclonable Functions (PUFs) and Hardware Security, and Neural Dynamics and Brain Function.

Recent papers authored or coauthored by Montserrat Nafría include:

  • Power-Efficient Noise-Induced Reduction of ReRAM Cell's Temporal Variability Effects, 2020, IEEE Transactions on Circuits & Systems II Express Briefs
  • Aging in CMOS RF Linear Power Amplifiers: An Experimental Study, 2020, IEEE Transactions on Microwave Theory and Techniques
  • Statistical Characterization of Time-Dependent Variability Defects Using the Maximum Current Fluctuation, 2021, IEEE Transactions on Electron Devices
  • A robust and automated methodology for the analysis of Time-Dependent Variability at transistor level, 2020, Integration
  • DC Characterization and Fast Small-Signal Parameter Extraction of Organic Thin Film Transistors With Different Geometries, 2020, IEEE Electron Device Letters

Frequent coauthors of Montserrat Nafría include:

  • A. Crespo-Yepes
  • R. Rodríguez
  • J. Martín-Martínez
  • M. Porti
  • R. Castro-López

The scientist's work appears regularly in several publication venues. The most frequent include:

  • Solid-State Electronics
  • SSRN Electronic Journal
  • IEEE Electron Device Letters
  • IEEE Transactions on Electron Devices
  • IEEE Access

Best Publications

  • Metal oxide resistive memory switching mechanism based on conductive filament properties

    G. Bersuker;D. C. Gilmer;D. Veksler;P. Kirsch

  • Grain boundaries as preferential sites for resistive switching in the HfO2 resistive random access memory structures

    M. Lanza;K. Zhang;M. Porti;M. Nafría

  • Resistive switching in hafnium dioxide layers: Local phenomenon at grain boundaries

    M. Lanza;G. Bersuker;M. Porti;E. Miranda

  • Emerging yield and reliability challenges in nanometer CMOS technologies

    G. Gielen;P. De Wit;E. Maricau;J. Loeckx

  • AC NBTI studied in the 1 Hz -- 2 GHz range on dedicated on-chip CMOS circuits

    R. Fernandez;B. Kaczer;A. Nackaerts;S. Demuynck

  • Grain boundary-driven leakage path formation in HfO2 dielectrics

    G. Bersuker;J. Yum;L. Vandelli;A. Padovani

  • Electrical characterization of stressed and broken down SiO2 films at a nanometer scale using a conductive atomic force microscope

    M. Porti;M. Nafrı́a;X. Aymerich;A. Olbrich

  • Metal oxide RRAM switching mechanism based on conductive filament microscopic properties

    G. Bersuker;D. C. Gilmer;D. Veksler;J. Yum

  • Grain boundary mediated leakage current in polycrystalline HfO2 films

    K. McKenna;A. Shluger;V. Iglesias;M. Porti

  • Soft breakdown conduction in ultrathin (3-5 nm) gate dielectrics

    E. Miranda;J. Sune;R. Rodriguez;M. Nafria

  • Exploratory observations of post-breakdown conduction in polycrystalline-silicon and metal-gated thin-oxide metal-oxide-semiconductor capacitors

    M. Nafría;J. Sun̄é;X. Aymerich

  • A function-fit model for the soft breakdown failure mode

    E. Miranda;J. Sune;R. Rodriguez;M. Nafria

  • Point contact conduction at the oxide breakdown of MOS devices

    J. Sune;E. Miranda;M. Nafria;X. Aymerich

  • Probabilistic defect occupancy model for NBTI

    J. Martin-Martinez;B. Kaczer;M. Toledano-Luque;R. Rodriguez

  • Graphene-coated atomic force microscope tips for reliable nanoscale electrical characterization.

    M. Lanza;A. Bayerl;T. Gao;M. Porti

  • Note: Electrical resolution during conductive atomic force microscopy measurements under different environmental conditions and contact forces.

    M. Lanza;M. Porti;M. Nafría;X. Aymerich

  • New Weighted Time Lag Method for the Analysis of Random Telegraph Signals

    Javier Martin-Martinez;Javier Diaz;Rosana Rodriguez;Montserrat Nafria

  • Soft breakdown fluctuation events in ultrathin SiO2 layers

    E. Miranda;J. Suñé;R. Rodríguez;M. Nafría

  • Correlation between the nanoscale electrical and morphological properties of crystallized hafnium oxide-based metal oxide semiconductor structures

    V. Iglesias;M. Porti;M. Nafría;X. Aymerich

  • Tuning graphene morphology by substrate towards wrinkle-free devices: Experiment and simulation

    M. Lanza;Y. Wang;A. Bayerl;T. Gao

Frequent Co-Authors

Mario Lanza
Mario Lanza National University of Singapore
Jordi Suñé
Jordi Suñé Autonomous University of Barcelona
Enrique Miranda
Enrique Miranda Autonomous University of Barcelona
Gennadi Bersuker
Gennadi Bersuker The Aerospace Corporation
Eddy Simoen
Eddy Simoen Ghent University
Alessandro Paccagnella
Alessandro Paccagnella University of Padua
Alexander L. Shluger
Alexander L. Shluger University College London

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