World's Best Scientists 2026 revealed!

D-Index & Metrics

Electronics and Electrical Engineering

D-Index
36
Citations
6192
World Ranking
5307
National Ranking
95

Overview

Montserrat Nafría is affiliated with the Autonomous University of Barcelona in Spain. Their research primarily focuses on the field of Engineering, with a significant emphasis on Electrical and Electronic Engineering. Additional subfields include Hardware and Architecture, Cognitive Neuroscience, Statistical and Nonlinear Physics, as well as Atomic and Molecular Physics, and Optics.

The main topics covered in their research encompass Semiconductor Materials and Devices, Advancements in Semiconductor Devices and Circuit Design, Integrated Circuits and Semiconductor Failure Analysis, Advanced Memory and Neural Computing, Ferroelectric and Negative Capacitance Devices, Physical Unclonable Functions (PUFs) and Hardware Security, and Neural Dynamics and Brain Function.

Recent papers authored or coauthored by Montserrat Nafría include:

  • Power-Efficient Noise-Induced Reduction of ReRAM Cell's Temporal Variability Effects, 2020, IEEE Transactions on Circuits & Systems II Express Briefs
  • Aging in CMOS RF Linear Power Amplifiers: An Experimental Study, 2020, IEEE Transactions on Microwave Theory and Techniques
  • Statistical Characterization of Time-Dependent Variability Defects Using the Maximum Current Fluctuation, 2021, IEEE Transactions on Electron Devices
  • A robust and automated methodology for the analysis of Time-Dependent Variability at transistor level, 2020, Integration
  • DC Characterization and Fast Small-Signal Parameter Extraction of Organic Thin Film Transistors With Different Geometries, 2020, IEEE Electron Device Letters

Frequent coauthors of Montserrat Nafría include:

  • A. Crespo-Yepes
  • R. Rodríguez
  • J. Martín-Martínez
  • M. Porti
  • R. Castro-López

The scientist's work appears regularly in several publication venues. The most frequent include:

  • Solid-State Electronics
  • SSRN Electronic Journal
  • IEEE Electron Device Letters
  • IEEE Transactions on Electron Devices
  • IEEE Access

Best Publications

  • Metal oxide resistive memory switching mechanism based on conductive filament properties

    G. Bersuker;D. C. Gilmer;D. Veksler;P. Kirsch

  • Grain boundaries as preferential sites for resistive switching in the HfO2 resistive random access memory structures

    M. Lanza;K. Zhang;M. Porti;M. Nafría

  • Resistive switching in hafnium dioxide layers: Local phenomenon at grain boundaries

    M. Lanza;G. Bersuker;M. Porti;E. Miranda

  • Emerging yield and reliability challenges in nanometer CMOS technologies

    G. Gielen;P. De Wit;E. Maricau;J. Loeckx

  • AC NBTI studied in the 1 Hz -- 2 GHz range on dedicated on-chip CMOS circuits

    R. Fernandez;B. Kaczer;A. Nackaerts;S. Demuynck

  • Grain boundary-driven leakage path formation in HfO2 dielectrics

    G. Bersuker;J. Yum;L. Vandelli;A. Padovani

  • Electrical characterization of stressed and broken down SiO2 films at a nanometer scale using a conductive atomic force microscope

    M. Porti;M. Nafrı́a;X. Aymerich;A. Olbrich

  • Metal oxide RRAM switching mechanism based on conductive filament microscopic properties

    G. Bersuker;D. C. Gilmer;D. Veksler;J. Yum

  • Grain boundary mediated leakage current in polycrystalline HfO2 films

    K. McKenna;A. Shluger;V. Iglesias;M. Porti

  • Soft breakdown conduction in ultrathin (3-5 nm) gate dielectrics

    E. Miranda;J. Sune;R. Rodriguez;M. Nafria

  • Exploratory observations of post-breakdown conduction in polycrystalline-silicon and metal-gated thin-oxide metal-oxide-semiconductor capacitors

    M. Nafría;J. Sun̄é;X. Aymerich

  • A function-fit model for the soft breakdown failure mode

    E. Miranda;J. Sune;R. Rodriguez;M. Nafria

  • Point contact conduction at the oxide breakdown of MOS devices

    J. Sune;E. Miranda;M. Nafria;X. Aymerich

  • Probabilistic defect occupancy model for NBTI

    J. Martin-Martinez;B. Kaczer;M. Toledano-Luque;R. Rodriguez

  • Graphene-coated atomic force microscope tips for reliable nanoscale electrical characterization.

    M. Lanza;A. Bayerl;T. Gao;M. Porti

  • Note: Electrical resolution during conductive atomic force microscopy measurements under different environmental conditions and contact forces.

    M. Lanza;M. Porti;M. Nafría;X. Aymerich

  • New Weighted Time Lag Method for the Analysis of Random Telegraph Signals

    Javier Martin-Martinez;Javier Diaz;Rosana Rodriguez;Montserrat Nafria

  • Soft breakdown fluctuation events in ultrathin SiO2 layers

    E. Miranda;J. Suñé;R. Rodríguez;M. Nafría

  • Correlation between the nanoscale electrical and morphological properties of crystallized hafnium oxide-based metal oxide semiconductor structures

    V. Iglesias;M. Porti;M. Nafría;X. Aymerich

  • Tuning graphene morphology by substrate towards wrinkle-free devices: Experiment and simulation

    M. Lanza;Y. Wang;A. Bayerl;T. Gao

Frequent Co-Authors

Mario Lanza
Mario Lanza National University of Singapore
Enrique Miranda
Enrique Miranda Autonomous University of Barcelona
Gennadi Bersuker
Gennadi Bersuker The Aerospace Corporation
Eddy Simoen
Eddy Simoen Ghent University
Alessandro Paccagnella
Alessandro Paccagnella University of Padua
Alexander L. Shluger
Alexander L. Shluger University College London
Huiling Duan
Huiling Duan Peking University

If you think any of the details on this page are incorrect, let us know.

Report an issue

We appreciate your kind effort to assist us to improve this page, it would be helpful providing us with as much detail as possible in the text box below:

Related Online Degrees & Career Pathways

For those interested in Electronics and Electrical Engineering, exploring best online colleges for military spouses can offer flexible and supportive learning environments. These programs often cater to students needing adaptable schedules, which is essential for balancing personal commitments and education.

Many students benefit from enrolling in online schools with multiple start dates, providing more opportunities to begin studies at times that fit their lives. This flexibility helps maintain steady progress toward degree completion without waiting for a traditional semester cycle.

In addition to degree programs, short certificate programs can quickly enhance specific skills relevant to electronics and electrical fields. These certificates are valuable for those seeking to boost employability or pivot into new technical roles without long-term commitments.

For individuals who prefer thoughtful, independent work environments, careers in engineering can be ideal. Resources highlighting the jobs for introverts that pay well show that many engineering roles offer rewarding, well-compensated opportunities suited to introverted professionals.

Best Scientists Citing Montserrat Nafría

Trending Scientists

Recently Published Articles